KR20150015359A - Electron beam evaporation apparatus - Google Patents

Abstract

An electron beam evaporation apparatus can prevent secondary electron or reflection electron generated by electron beam evaporation from being attached to a substrate and prevent deposition from being disturbed by a magnet itself blocking electron as a blocking material. A container (crucible (2)) of a deposition material is positioned on a lower side of substrate (1) to be deposited. A pair of magnets (4A, 4B) is installed on both sides of the container to be apart from the container at a predetermined distance in an upper area of the center of a substrate (1) in the center of the container. The magnets are arranged so that one ends of the magnet on the center side of the substrate slope downward from the other ends of the magnet. The electron beam evaporation apparatus can prevent the characteristics of organic device from being deteriorated if the secondary electron or reflection electron generated when an electron beam is deposited is irradiated on the organic film on the substrate while the electron beam is deposited, thereby obtaining the same characteristics as the organic device manufactured by resistance heat metal deposition. Also, the electron beam evaporation apparatus enables deposition on the entire substrate by preventing the magnets from becoming a blocking material of a deposition.

Description

ELECTRON BEAM EVAPORATION APPARATUS

The present invention relates to a deposition apparatus using an electron beam.

A vapor deposition apparatus using an electron beam is a vapor deposition apparatus in which electrons accelerated by a predetermined voltage are irradiated to a material in a crucible disposed in a vacuum container and heated to evaporate the evaporated material, To form a thin film (thin film) on the surface of the substrate.

This deposition apparatus is used for various purposes because it can form a film at a high speed for many types of materials. However, when a secondary electron or a reflection electron (reflection electron) generated by irradiation of a material in an crucible with an electron beam is deposited (Compositional change) of the film-forming portion may occur. Particularly, when electron beam evaporation is performed as a substrate during the film formation process of an organic device, a change in the composition of the surface of the organic thin film due to the secondary electrons or reflected electrons, and deterioration of characteristics as an organic device may occur.

For example, Patent Document 1 is known for suppressing secondary electrons and reflection electrons. Patent Document 1 discloses a technique in which a pair of electromagnets are arranged in a space in which a substrate and a crucible face each other so as to face the direction of a magnetic field horizontally and a probe is installed in the vicinity of the substrate (Excitation current) to a pair of electromagnets while watching an electron current (electron current) flowing through the probe.

However, in Patent Document 1, it is necessary to set a certain distance between the magnets and the electron beam so as not to affect the deflection of the electron beam, and it is necessary to set the magnets on the substrate However, since the magnetic field region is formed by a pair of magnets in the space where the crucible and the substrate face each other, the magnet itself becomes a shield (shielding member), and the deposition range is limited. For example, G2 to G4 It is difficult to apply it to a large-size glass substrate.

Secondary electrons and reflected electrons, which are deflected from the substrate direction by the magnetic field region, are reflected on the inner wall of the vacuum container and so on, so that they can travel around the magnetic field region There is a possibility that electrons incident on the deposition surface of the substrate can not be completely shielded by a pair of magnets.

(Patent Document 1) Japanese Patent Application Laid-Open No. 5-156428

The problem to be solved by the present invention is that a magnet itself for forming a magnetic field region in a space where a substrate and a crucible are opposed to each other becomes a shield to limit the deposition range and prevent the secondary electrons or the reflected electrons from entering the substrate The effect is low.

An electron beam vapor deposition apparatus for forming a thin film by evaporating a material by irradiating and accelerating accelerated electrons by attaching the evaporated material to a surface of a substrate while shielding electrons by a formed magnetic field,

Placing a receiver of the deposition material under the substrate to be deposited,

A pair of magnets spaced apart from each other by a center of the receptacle are provided in a space above the center of the substrate at the center of the receptacle, And is arranged to be inclined downward than the end portion.

In the electron beam vapor deposition apparatus of the present invention, the magnets are arranged so as to form an optimum magnetic field in correspondence with the positioning of the receiver of the evaporation material below the substrate to be evaporated, so that the magnets do not become shields that interfere with evaporation.

As for the disposition of the magnets, a pair of magnets spaced apart from each other with a predetermined distance therebetween is disposed between the centers of the receivers, and the respective center centers of the magnets are inclined downward from the other end The magnet does not interfere with the deposition and prevents the secondary electrons or the reflected electrons generated by the electron beam irradiated toward the receiver from directly entering the film forming portion of the substrate.

In the above-described electron beam vapor deposition apparatus, if the electromagnetic shielding plate grounded around the receptacle is provided within a range that does not become a shielding material for deposition, the secondary electrons or the reflected electrons flow into the earth through the inner wall, .

The electron beam vapor deposition apparatus may further include a receiver elevating mechanism for changing the height from the deposition surface of the substrate to the receiver, a magnet elevating mechanism for changing the inclined upper height of the magnet at the height of the receiver, And a control section for controlling operations of the recipient elevator mechanism, the magnet elevator mechanism, the magnet inclination changing mechanism, and the inter-magnet moving mechanism, It is possible to optimally arrange the magnets on the basis of the type of the evaporation material and the shape of the substrate and on the basis of the amount of electrons measured by the electromagnetic measuring instrument provided at the position where diameters are opposite to each other on the rotation locus outside the substrate.

In the present invention, it is possible to suppress deterioration of the characteristics of an organic device due to a change in the composition of an organic thin film, which is generated when reflected electrons or secondary electrons generated during electron beam deposition are incident on a surface of an organic thin film formed before electron beam deposition, The deposition range which was disturbed by the magnet can be extended to the entire area of the substrate up to the size of the G4 substrate and is formed by resistance heating type evaporation which does not generate secondary electrons or reflected electrons in principle The characteristics equivalent to those of the organic device can be obtained and it is possible to use an electron beam vapor deposition apparatus which is easier to form at a high speed than the case of the resistance heating type.

Further, in the present invention, when an electromagnet is used for the electromagnetic shielding magnet, the magnetic field adjustment (magnetic field adjustment) necessary when the magnet gap is changed according to the material used for deposition in the permanent magnet must be stopped So that it is possible to form a magnetic field for electromagnetic shielding and to have a uniform film thickness distribution and to perform high-speed film formation when a plurality of materials are continuously deposited.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing a schematic configuration of an electron beam vapor deposition apparatus of the present invention. FIG.
2 (a) and 2 (b) are views showing the optimum arrangement of the magnets in the electron beam vapor deposition apparatus of the present invention.
3 (a) and 3 (b) are views showing the arrangement relationship of the magnet and the receiver with respect to the substrate of the electron beam vapor deposition apparatus of the present invention.
4 is a view showing the arrangement of the electromagnetic shielding plate in the electron beam vapor deposition apparatus of the present invention.
5 is a diagram for explaining the influence amount of the magnetic field on the deposition rate.
Fig. 6 is a view showing the position within the deposition range of the organic EL device in the test conducted to confirm the effect of the present invention. Fig.

In the present invention, the purpose of suppressing both of the secondary electrons (secondary electrons) and the reflection electrons (reflected electrons) entering the substrate and the magnet itself as a shielding material hinders evaporation A pair of magnets spaced apart from each other by a center of the receiver is installed in a space above the center of the substrate at the center of the substrate and a receiver of the evaporation material is positioned below the substrate to be deposited , And by arranging the center side end portions of the respective substrates in the pair of magnets so as to be inclined downward from the other (the other) end portion.

(Example)

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

In the drawings, only essential parts that are features of the electron beam evaporation apparatus of the present invention are shown, and members omitted in the drawings are not given the same reference numerals in the following description.

In the electron beam vapor deposition apparatus of this embodiment, a rectangular substrate 1 for forming a thin film on the surface is provided above the inside of the vacuum chamber, and the surface center of the substrate 1 And the deposition is carried out while rotating.

The substrate 1 is intended to be, for example, up to the size of G4. The substrate 1 may be an organic EL light source, an organic EL display, an organic TFT, an organic solar cell Called " organic device "

2 is a crucible which is a receiver into which an evaporation material (evaporation material) (hereinafter referred to as a material) is charged. The crucible 2 is disposed at an end portion of the substrate, in this example, below the circular trajectory of the rectangular substrate 1. [

The crucible 2 is changed in height by the crucible elevating mechanism 21 in the present example and the distance from the deposition surface of the substrate 1 (see height H described later: see Fig. 3) . The crucible 2 may be, for example, a so-called turret system in which a plurality of materials are switched and used at one evaporation source position. At this time, since the material has a specific deposition distribution for each material, the height H of the material used as the evaporation source is changed by the crucible elevating mechanism 21 as described above to maintain the uniformity of the film thickness.

The reason why the crucible 2 is not adjusted by moving the distance from the central axis of the substrate 1 is that in the turret type in which a plurality of materials are deposited as described above, The reason is that it is difficult to move the distance Y from the axis.

The material charged into the crucible 2 is introduced into the crucible 2 by deflecting the direction of the electron irradiated from the electron gun 3 as an electron beam source by the magnet, 2) by the collision of electrons. The illustration and description of the configuration of the magnet for electron beam career deflection are omitted.

With respect to the electron beam source, in this embodiment, it is possible to adjust the low-speed voltage (for example, -6 kV or more) to reduce the X-ray dose depending on the acceleration voltage. Deposition is carried out at an acceleration voltage of-2 kV or more for the deposition of organic devices to be deposited.

4 (4A and 4B) are made of, for example, neodymium magnets, samarium-cobalt magnets, and the like for deflecting secondary electrons and reflected electrons generated after irradiation of the material in the crucible 2, In this example, as shown in Fig. 2 (a), in a space in the direction of the substrate 1 in the crucible 2, a direction in which the center of the crucible 2 is interposed and a direction (N-poles and S-poles) are arranged at predetermined equidistant intervals (equally spaced), and one end side (one end side) is inclined to the other end side (another end side).

The arrangement of the NS poles of the magnets 4 is such that the right side is the N pole and the left side is the S pole toward the center of the substrate 1 as shown in Fig. 2 (b). In this embodiment, the direction of the magnetic field is the direction of the magnet 4A from the magnet 4B, with the magnet 4A as the S pole and the magnet 4B as the N pole. At this time, when the electrons generated in the electron beam evaporation apparatus enter the magnetic field in the magnets 4A and 4B, the electrons are guided to the outside of the substrate 1 (conversely, the magnet 4A is an N pole and the magnet 4B is an S pole , Electrons are induced toward the substrate side).

The magnets 4 (4A and 4B) have a height H 'from the upper surface of the crucible 2, which will be described later, by means of a magnet elevator mechanism (magnet elevator mechanism) Of the magnet 4 to be described later by the magnet gradient changing mechanism 42 by the magnet interchange mechanism (magnet interchange mechanism) 42 will be described later Quot; distance C " of the magnets 4A and 4B sandwiching the crucible 2 to which the honeycomb structure 1 is attached.

As described above, the crucible 2 changes its height by the crucible elevating mechanism 21 and the distance (height H described later) from the deposition surface of the substrate 1, but the distance from the center of the substrate 1 And the distance Y between the first and second electrodes is not changed. Here, in this example, since the deposition distribution on the substrate 1 changes depending on the material to be used, it is necessary to change the height H of the crucible 2, but the magnet 4 can not cover the deposition range The electromagnetic shielding may become difficult or the magnet 4 itself may interfere with the deposition.

1, the amount of electrons (the amount of electrons) reaching the substrate 1 by the electronic measuring instrument 45 provided at a position where the diameter of the substrate 1 faces the rotation locus of the substrate 1 is monitored Of the magnet 4 so as to be a magnet arrangement condition to be described later is set by the magnet lift mechanism 41 so that the inclination? (C) " is changed by the inter-magnet moving mechanism 43.

The electron beam vapor deposition apparatus of the present invention is characterized in that the control unit 10 controls the control unit 10 based on the type of evaporation material and the shape of the substrate 1 (the length and width of the substrate 1) The initial operation of the crucible elevating mechanism 21, the magnet elevating mechanism 41, the magnet gradient changing mechanism 42 and the inter-magnet moving mechanism 43 is controlled and when the deposition starts, the output from the electronic measuring instrument 45 Is sent to the control unit 10 to be linearly controlled.

5 is an electromagnetic shielding plate (electron shielding plate) provided to prevent reflected electrons and secondary electrons from reaching the substrate 1 as shown in Fig. Electrons of the electron beam are shielded by electrons between the magnets 4A and 4B by the magnetic field of the magnet 4 but electrons bent by the magnetic field after passing through the lower portion of the magnet 4 are emitted from the substrate 1 ). There is also a case where the electrons reflected from the vacuum container are blown to the outside of the substrate 1 to reach the substrate 1.

Thus, in this example, the electromagnetic shielding plate 5 is provided below the magnetic field where the magnet 4 and the crucible 2 are located to surround the crucible 2. The electromagnetic shielding plate 5 is connected to the earth and surrounds the crucible 2 so as to surround the center of the substrate 1 (referred to as forward) and the outward direction of the circular locus (This is referred to as a lateral direction) of the substrates 4A and 4B and a direction of the substrate 1 viewed from the crucible 2 (this is referred to as an upper direction).

Specifically, in this example, the electromagnetic shielding plate 5 is arranged as shown in Fig. The electromagnetic shielding plate 5A at the front between the lower end and the lower end between the magnets 4A and 4B and the electromagnetic shielding plate 5B at the upper side between the upper end and the upper end between the magnets 4A and 4B and the magnets 4A and 4B, The electromagnetic shielding plates 5C and 5D are provided on the outer side between the magnets 4A and 4B and the electromagnetic shielding plate 5E is provided on the rear side of the crucible 2 without gaps, And the frame that covers the crucible 2 is constituted by the electromagnetic shielding plate 5.

The electromagnetic shielding plate 5 can not be installed without gaps when the arrangement of the crucible 2 and the magnet 4 is changed by the mechanisms 21, 41, 42 and 43 as described above However, when the electromagnetic shielding can be sufficiently performed by the magnet 4, there may be a gap for the moving stroke of the crucible 2 or the magnet 4.

As described above, by providing the electromagnetic shielding plate 5, the reflected electrons are blocked, and the electrons flying in other directions are confined in the frame space closed by the electromagnetic shielding plate 5 and eventually dropped to the earth, It becomes possible to very effectively prevent electrons from reaching the deposition range of the substrate 1. [

Next, the arrangement of the magnets 4A and 4B based on the positions of the substrate 1 and the crucible 2 will be described in detail with reference to Figs. 2 and 3. Fig. The arrangement condition of the following magnets 4 is also a condition of the magnetic field generating range in which the electromagnetic shielding effect becomes optimum.

In the present invention, in the case where the output of magnetic field generation during deposition of the magnet 4 is made constant without adjusting the output of magnetic field generation when the magnet 4 is made of an electromagnetic stone for electromagnetic shielding, 4) is set to an appropriate condition so as to enable electromagnetic shielding and uniform and high-speed film formation.

(Influence of the magnetic field on the beam)

When the magnetic field of the magnet 4 for the purpose of electromagnetic shielding is applied to the beam orbit, deflection or convergence of the electron beam is influenced and the intense irradiation of the electron beam to the material is not performed. As a result, the deposition rate . 5, since the magnetic flux density (magnetic flux density) on the beam trajectory drops by 10% at 0.5 mT, the magnetic field formed for the purpose of electromagnetic shielding has a magnetic flux density of 0.5 mT or more Quot;

(Magnet placement)

Basically, it is possible to cope with the problem by adjusting the output of the magnetic field generated by the magnet 4 or the output of the electron beam depending on the deposition area of the evaporation material or the substrate. However, in this example, And an optimum arrangement condition of the magnet 4 corresponding to the deposition area of the substrate 1 when the magnetic field generating output of the magnet 4 is made constant, which is suitable for film formation conditions.

The crucible 2 is positioned below the substrate 1 as described above. The distance between the lower surface (film forming portion) of the substrate 1 and the upper surface of the crucible 2 is determined by changing to a height at which a predetermined film thickness uniformity can be obtained since the deposition has an inherent deposition distribution depending on the evaporation material. In this example, the amount of electrons reaching the substrate 1 is measured using the output of the electronic measuring instrument 45, and the arrangement of the magnets is determined according to the distance between the lower surface (film forming portion) of the substrate 1 and the crucible 2 . Hereinafter, the magnet 4 is determined based on the position of the crucible 2 relative to the substrate 1.

As shown in Fig. 3, with respect to the magnets 4, "height (H)" from the upper surface of the crucible 2, "length (B)" of the magnet 4, (?) "between the magnets 4A, 4B and the" distance C "between the magnets 4A and 4B.

&Quot; height (H ') ": 200 mm < height (H') &

Assuming that the height H '(distance) from the upper surface of the crucible 2 to the upper end of the substrate 1 on the outer circumferential side of the magnet 4 arranged at an angle to the upper end thereof is 200 mm? Height (H')? 400 mm good. If the height of the upper end of the magnet 4 is lower than 200 mm (approaches the crucible 2), the electron beam interferes with the deflection and convergence onto the evaporation source, and efficient material heating is not performed. On the other hand, if the height of the upper end of the magnet 4 is higher than 400 mm (away from the crucible 2), it becomes a shielding material in vapor deposition.

"Length (B)"

The length B of the magnet 4 is obtained by subtracting the imaginary lines P and P 'connecting the center of the crucible 2 on the same plane perpendicular to the position where the diameters of the magnets 4 face each other in the rotation locus of the substrate 1 (Dashed line). The length B of the magnet 4 is determined by the rotation diameter of the substrate 1, the height of the crucible 2 with respect to the substrate 1, the height H 'of the magnet 4, In other words, even if the length B of the magnet 4 is fixed, it may be a fixed length as long as it can cope with the change of the factors.

&Quot; magnetic gradient (&thetas;) ": 5 DEG ≤

The magnet 4 does not affect the electron beam and the lower end A that is inclined downward in the magnet 4 is in a range not exceeding the center of rotation of the substrate 1 and the crucible 2 Of the substrate 1 and a portion of the rotation track of the substrate 1 that is the farthest in diameter are positioned substantially on a virtual line P 'connecting on the same vertical plane. On the other hand, the inclined upper end surface of the magnet 4 is defined by the height H '. The magnet 4 is inclined such that the upper end face of the magnet 4 is displaced by the height H 'and the lower end face is defined by the imaginary line P' according to the length B of the magnet 4, The angle of inclination? Is approximately 5 deg. &Amp;thetas; magnet slope &thetas; 45 deg.

If the inclination angle? Is less than 5 degrees, the substrate 1 becomes a shielding material for deposition, and if another evaporation source or mechanism is provided on the opposite side to the center of the substrate 1, for example, It becomes more likely to become an obstacle as water. On the other hand, if the inclination angle? Is larger than 45 degrees, the range of the imaginary line P-P 'can not be covered by the magnet, and electrons pass from the outside of the magnetic field forming region necessary for deflection of the reflected electrons and secondary electrons, ), Or when the electron beam travels from the front to the rear, there is a high possibility that interference with the electron beam trajectory by the above-mentioned electromagnetic shielding magnetic field occurs.

Distance (C): 100 mm? Distance (C)? 400 mm

It is premised that the deposition on the substrate 1 is not disturbed and if the distance between the magnets 4A and 4B sandwiching the crucible 2 is shorter than 100 mm, do. On the other hand, if the interval between the magnets 4A and 4B sandwiching the crucible 2 is longer than 400 mm, it is difficult to form a magnetic field necessary for electromagnetic shielding. Or it may be a shield of other evaporation sources or an interference of other mechanisms in the vacuum vessel.

Next, the results of an experiment conducted to confirm the effect of the present invention in the following constitution satisfying the arrangement condition of the magnet 4 will be shown. As a basic requirement, the electron beam has an acceleration voltage of-2 kV or less, for example, -2 kV, and the magnetic flux density between the magnets 4A and 4B in the magnet 4 is set to 5 mT or more, Respectively.

Further, the distance Y from the center of the substrate 1 in the crucible 2 is set to be 0.5 times or more, for example, 1 times the radius D of the rotation locus when the substrate rotates, And the center of the crucible was positioned immediately below the crucible.

The distance H from the deposition surface of the substrate 1 to the center of the crucible 2 depends on the height H 'of the magnet 4 (due to the relationship with the height H' of the magnet 4) (Distance H), but the distance Y from the center of the crucible 2 to the center of the substrate 1 is 1500 mm or less and finally determined.

The distance H from the deposition surface of the substrate 1 to the center of the crucible 2 and the distance Y from the center of the substrate 1 in the crucible 2 become the target film thickness uniformity There is no upper limit. However, since the deposition rate is lowered when the distance Y from the center of the crucible 2 to the center of the substrate 1 is longer than 1500 mm, 1500 mm, in which the deposition rate is 10 Å / 2 as the upper limit of the distance Y from the center of the substrate 1 to the center of the substrate 1.

The results of tests conducted to confirm the effects of the present invention are shown below. The test was conducted by evaluating the organic EL device manufactured under the following conditions.

The organic EL device for evaluation has a structure in which the center (distance from the center of the substrate is Omm) and the end portion (distance from the center of the substrate is 250 mm and 375 mm) in the deposition range in the substrate 1 of 370 mm x 470 mm and 550 mm x 650 mm ITO (Indium Tin Oxide) patterned on a glass substrate having a width of 50 mm and a length of 50 mm, and an aluminum mask using a deposition mask so as to be a device having a width of 2 mm and a width of 2 mm after deposition of the organic thin film, Electron-beam evaporation at a deposition rate of 10 Å / s and a film thickness of 2000 Å. Hereinafter, as shown in Fig. 6, an organic EL element manufactured at the center is referred to as a "center element" and an organic EL element manufactured at an end portion is referred to as an "end element" in the deposition range.

In Table 1 below, the height H ', the length B, the inclination? And the interval C in the magnet 4 are deposited as shown in Table 1 according to the above conditions, (Current density) and the luminous efficiency. On the other hand, Table 2 below shows the results of the deposition under the above-mentioned conditions with or without the conditions.

When the composition of the organic thin film layer formed by the secondary electron and the reflection electron in the electron beam deposition was changed, the emission efficiency was lowered (it was confirmed that the composition change into the organic thin film by X-ray and the deterioration of the device characteristics did not occur Evaluated by acceleration voltage). For this reason, the influence of secondary electrons and the amount of reflected electrons was evaluated by comparing the luminous efficiency of a device manufactured by a resistance heating method (resistance heating method) in which secondary electrons and reflected electrons were not generated as references.

In the case of the configuration (Table 2) in which the arrangement conditions of the magnets 4 and the like are not satisfied, in particular, the inclination (?) In which the magnets 4 are horizontally arranged is 0 As a result, since the magnet itself could not be a shield for deposition or shield the secondary electrons or reflective electrons, it would reach the substrate 1 and the characteristics of the device would be degraded.

In the case of the configuration example (Table 1) that satisfies the arrangement condition of the magnets 4, it is possible to prevent the secondary electrons and the reflection electrons from entering the deposition range, , It was confirmed from the fact that the light emitting efficiency equivalent to that obtained by evaporating aluminum by the resistance heating method was obtained that the electron quantity causing the compositional change and the like to the organic thin film could be shielded. Further, it was confirmed that electromagnetic shielding is more effectively possible by combining the electromagnetic shielding plates.

In the above embodiment, the substrate is rotated and vaporized, but the substrate may be fixed or transported. The magnet arrangement in this case may be determined based on the rotation locus when the substrate or the deposition opening is rotated.

1: substrate
2: Crucible
21: crucible lift mechanism
3: Electron gun
4: Magnet
4A, 4B: magnet
41: Magnet lift mechanism
42: Magnet slope changing mechanism
43: Magnet transfer mechanism
45: Electronic measuring instrument
5: Electronic shielding plate
5A to 5E: electromagnetic shield plate
10:

Claims (3)

An electron beam evaporation apparatus in which a material evaporated by irradiating and heating accelerated electrons is adhered to a surface of a substrate to form a thin film while forming a magnetic field for shielding incidence of electrons from the substrate, (Electron beam evaporation device)
Placing a receiver of the evaporation material under the substrate to be evaporated,
A pair of magnets spaced apart from each other by a center of the receptacle are provided in a space above the center of the substrate at the center of the receptacle, Is arranged so as to be inclined downward from an end of the electron beam evaporation device (2).
The method according to claim 1,
Wherein an electromagnetic shielding plate (electron shielding plate) is provided on the periphery of the receiver.
3. The method according to claim 1 or 2,
A receiver elevator mechanism for changing the height of the receiver from the deposition surface of the substrate to the receiver and a magnet elevator mechanism for changing the height of the inclined upper end of the magnet at the height of the receiver A magnet inclination changing mechanism for changing the inclination angle of the magnet, an inter-magnet moving mechanism (inter-magnet moving mechanism) for changing the interval between the pair of magnets, (Magnetic amount) measured by an electromagnetic measuring instrument provided at a position where diameters of the magnet are opposite to each other on the rotation locus of the substrate, And a control section (control section) for controlling the operation of the interlayer movement mechanism.

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