JP2012112002A - Vapor deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus capable of effectively reducing electrons that are incident on a substrate.SOLUTION: The vapor deposition apparatus 1A for vapor-depositing a film-forming material on the surface of the substrate P includes: a substrate arranging part 3 capable of arranging the substrate P with the vapor-deposited surface Pa of the substrate P facing downward, in a predetermined range A1 preset as a range in which the film-forming material 50 can be vapor-deposited; a storage part 4 arranged below the substrate arranging part 3 to store the film-forming material 50 radiated in the predetermined range A1; an irradiation part 5 irradiating the storage part 4 with electron beams EB; an adsorption part 6 arranged at the side of the storage part 4 to adsorb electrons; and a magnetic field generating part 7 arranged above at least the adsorption part 6 outside the radiation range A2 of the film-forming material 50 heading toward the predetermined range A1 from the storage part 4, to generate a magnetic field M3 for deflecting the upward heading electrons in a horizontal direction.

Description

  The present invention relates to a vapor deposition apparatus.

  A vapor deposition apparatus that forms a film by a vapor deposition method in a vacuum chamber is used when manufacturing various devices. An electron beam evaporation apparatus, which is one of the evaporation apparatuses, can irradiate a film forming material accommodated in a crucible by deflecting an electron beam emitted from an electron gun by a magnetic field. The film forming material evaporates upon receiving energy from the electron beam. The material vapor obtained by evaporating the film forming material contacts the surface of the device manufacturing substrate to form a film.

  When the film forming material is irradiated with an electron beam in the electron beam evaporation apparatus, secondary electrons may be generated from the inside of the film forming material. Further, secondary electrons may be generated by ionizing the material vapor by the electron beam incident on the film forming material. In addition, a part of the electron beam recoils on the surface of the film forming material, and reflected electrons may be generated. When the reflected electrons collide with the wall surface of the vacuum chamber, secondary electrons or reflected electrons may be generated.

  When the secondary electrons or reflected electrons are incident on the substrate, an element or the like previously formed on the substrate may be deteriorated. As a technique for suppressing the incidence of secondary electrons and reflected electrons on the substrate, for example, techniques disclosed in Patent Documents 1 and 2 can be cited.

  The isotope separation device of Patent Document 1 can enhance a magnetic field for deflecting an electron beam by a pair of permanent magnets disposed on both edges of a crucible. The electron beam due to the reflected electrons is deflected again towards the crucible by the enhanced magnetic field.

  The vacuum deposition apparatus of Patent Document 2 includes a reflected electron trap for capturing an electron beam reflected by an evaporation material. The reflected electron trap has a box shape having an opening through which reflected electrons are incident. The backscattered electron trap has a magnetic pole for generating a magnetic field for deflecting the backscattered electrons inside the box, and an electron absorber disposed on a surface on which the backscattered backscattered electrons are incident.

JP 63-218239 A JP 2010-106289 A

  By the way, since secondary electrons are generated with lower energy than reflected electrons, the generation location is wide and the scattering direction has a wide distribution. If a capturing unit that captures electrons such as secondary electrons is provided over a wide range, the vacuum chamber and the capturing unit may be large. Thus, in the above-described conventional technology, there is room for improvement in effectively reducing the electrons incident on the substrate.

  This invention is made | formed in view of the above-mentioned situation, Comprising: It aims at providing the vapor deposition apparatus which can reduce the electron which injects into a board | substrate effectively.

  The vapor deposition apparatus of the present invention is a vapor deposition apparatus that deposits a film forming material on the surface of a substrate, and the vapor deposition surface of the substrate is placed downward in a predetermined range that is preset as a range in which the film forming material can be deposited. A substrate placement portion capable of placing the substrate toward the substrate, a housing portion disposed below the substrate placement portion and housing the film forming material radiated to the predetermined range, and irradiating the housing portion with an electron beam An irradiation unit that is disposed on the side of the housing unit and that adsorbs electrons, and at least above the suction unit outside the radiation range of the film-forming material from the housing unit toward the predetermined range. And a magnetic field generating unit that generates a magnetic field that deflects electrons directed upward in the horizontal direction.

  In the above-described vapor deposition apparatus, a magnetic field generation unit that generates a magnetic field that deflects upward electrons in the horizontal direction is arranged. Therefore, the electrons traveling toward the substrate arranged in a predetermined range by the substrate arrangement unit are deflected in the horizontal direction by the magnetic field and are not easily incident on the substrate. The adsorbing part is a part that adsorbs electrons, and thus is a place where reflected electrons and secondary electrons are likely to be generated. Since the magnetic field generation unit is arranged at least above the adsorption unit outside the radiation range of the film forming material from the housing unit toward a predetermined range, it is possible to effectively reduce the electrons incident on the substrate.

The substrate placement unit is capable of transporting the substrate in a first direction of the horizontal direction within a range including the predetermined range, and the magnetic field generation unit transmits electrons directed upward from the first direction. Also, it may be deflected in a second direction that intersects the first direction in the horizontal direction.
In this way, electrons directed to the substrate are deflected in the second direction that intersects the first direction in which the substrate is transported, making it difficult for electrons to enter the substrate downstream or upstream in the transport direction.

The vapor deposition apparatus is based on a measurement unit that measures the amount of electrons incident on the predetermined range, a change unit that changes the direction of the lines of magnetic force generated by the magnetic field generation unit, and a measurement result of the measurement unit. And a control unit that controls the changing unit.
In this way, the direction of the magnetic field lines of the magnetic field generated by the magnetic field generator can be changed based on the measured value of the amount of electrons incident on the predetermined range, and the amount of electrons incident on the substrate is controlled. be able to.

The vapor deposition apparatus may include a capturing unit that captures electrons deflected by the magnetic field generated by the magnetic field generating unit with electrostatic force.
In this way, since the capturing unit captures the electrons deflected by the magnetic field by the electrostatic force, it is possible to reduce the electrons floating between the housing unit and the substrate placement unit.

Said vapor deposition apparatus may be provided with the magnetic body which interrupts | blocks the magnetic force line which goes to the said board | substrate arrangement | positioning part from the said magnetic field generation | occurrence | production part.
In this way, the magnetic force lines from the magnetic field generating part to the substrate placement part are blocked by the magnetic material, so that it is possible to reduce the electrons traveling through the magnetic force lines to the substrate placement part.

  ADVANTAGE OF THE INVENTION According to this invention, the vapor deposition apparatus which can reduce effectively the electron which injects into a board | substrate can be provided.

It is the side view which looked at the inside of the vapor deposition apparatus of 1st Embodiment from the side. It is the side view which looked at the inside of the vapor deposition apparatus of 1st Embodiment from the other side. It is the upper side figure which looked at the inside of the vapor deposition apparatus of a 1st embodiment from the upper part. It is the side view which looked at the inside of the vapor deposition apparatus of 2nd Embodiment from the side. In 3rd Embodiment, it is a side view of the vapor deposition apparatus when calibrating. In 3rd Embodiment, it is explanatory drawing of the vapor deposition apparatus when performing vapor deposition. It is the side view which looked at the inside of the vapor deposition apparatus of 4th Embodiment from the side. It is the side view which looked at the inside of the vapor deposition apparatus of 5th Embodiment from the side.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the technical scope of the present invention is not limited to the following embodiments. The requirements described in the following embodiments can be combined as appropriate. In addition, one or more of the requirements described in each embodiment may not be used. In the following description, the same components may be denoted by the same reference numerals, and redundant descriptions may be omitted.

[First Embodiment]
A first embodiment will be described. Drawing 1 is a side view which looked at the inside of the vapor deposition device of a 1st embodiment from the side. FIG. 2 is a side view of the inside of the vapor deposition apparatus of the first embodiment as seen from the other side. FIG. 3 is a top view of the inside of the vapor deposition apparatus of the first embodiment as viewed from above.

  The vapor deposition apparatus 1A of the present embodiment can deposit a film forming material on the surface of the substrate P for device manufacture. The vapor deposition apparatus 1A is used, for example, in the manufacturing process of an organic electroluminescence element. The organic electroluminescence element has a structure in which an organic layer including a hole transport layer, an organic light emitting layer, an electron transport layer, and the like is disposed between a first electrode and a second electrode formed on a substrate. The vapor deposition apparatus 1A of the present embodiment is used in a process of forming a second electrode on a substrate on which a first electrode and an organic layer are formed, for example.

  The application range of the vapor deposition apparatus 1A is not limited to the material of the substrate P, the type of film forming material, and the use of the film to be formed. For example, the vapor deposition apparatus 1A can be used for forming various wirings, forming a low molecular organic layer, and the like. Moreover, in electronic devices other than an organic electroluminescent element, it can utilize when forming the film | membrane which has electroconductivity, and an insulating film with an organic material or an inorganic material.

  1A and 1B includes a vacuum chamber 2, a substrate placement unit 3, a storage unit 4, an irradiation unit 5, an adsorption unit 6, and a magnetic field generation unit 7. In the XYZ orthogonal coordinate system shown in FIGS. 1 and 2, the Z direction is a vertical direction, and the X direction and the Y direction are directions orthogonal to each other in the horizontal direction. In the following description, for each of the X direction, the Y direction, and the Z direction, one side may be referred to as a positive side and the other side may be referred to as a negative side.

  The vacuum chamber 2 can accommodate at least the accommodating portion 4, the attracting portion 6, the magnetic field generating portion 7, and the substrate P therein. The vacuum chamber 2 is connected to a decompression device 8 such as a vacuum pump. The decompression device 8 can decompress the inside of the vacuum chamber 2. The decompression device 8 may be a part of the vapor deposition device 1A or may be a device external to the vapor deposition device 1A.

  The substrate placement unit 3 is a holder or the like that holds the substrate P, for example. The substrate placement unit 3 is placed inside the vacuum chamber 2. The substrate placement unit 3 can place the substrate with the deposition surface Pa of the substrate P facing downward (the negative side in the Z direction) in a predetermined range A1 set in advance as a range in which the film forming material 50 can be deposited. .

  The accommodating part 4 is arrange | positioned under the board | substrate arrangement | positioning part 3 when the board | substrate P is arrange | positioned in the predetermined range A1. The accommodating portion 4 of this embodiment is held on the base 9. A base 9 holding the accommodating portion 4 is disposed inside the vacuum chamber 2. The accommodating part 4 is a crucible, for example. The accommodating part 4 has the opening 10 opened toward upper direction (positive side of Z direction). The accommodating portion 4 can accommodate the film forming material 50. The material of the accommodating portion 4 is selected in consideration of heat resistance, chemical stability, heat dissipation, and the like during the vapor deposition process. The accommodating part 4 is formed, for example with copper.

  The material vapor 51 obtained by evaporating the film forming material 50 scatters upward from the opening 10 of the housing portion 4. The material vapor 51 comes into contact with the surface of the substrate P disposed in the predetermined range A1. As a result, the film forming material is deposited on the surface of the substrate P, and a film is formed on the surface of the substrate P.

  The irradiation unit 5 is disposed inside the vacuum chamber 2 and adjacent to the storage unit 4. The irradiation unit 5 can irradiate the film forming material 50 stored in the storage unit 4 with the electron beam EB. The film forming material 50 in the container 4 evaporates by raising the temperature with the energy received from the electron beam EB. The irradiation part 5 of this embodiment is arrange | positioned outside the range from which the material evaporation from the accommodating part 4 is radiated | emitted. The irradiation unit 5 is attached to the side of the base 9.

  The irradiation unit 5 includes an electron gun 11 and a deflector 12. The electron gun 11 can emit an electron beam EB. The electron gun 11 of the present embodiment is disposed below the housing part 4. The deflector 12 has a coil or the like and can generate a magnetic force electrically. The deflector 12 can irradiate the film forming material 50 in the housing portion 4 with the electron beam EB by changing the traveling direction of the electron beam EB emitted from the electron gun 11 by magnetic force.

  The electron gun 11 of this embodiment emits an electron beam EB toward the negative side in the X direction. The deflector 12 generates a magnetic force line M1 from the positive side to the negative side in the Y direction. The deflector 12 deflects the electron beam EB emitted from the electron gun 11 approximately 270 ° around the Y axis by a magnetic field. The deflector 12 can change the curvature of the trajectory of the electron beam EB by changing the strength of the magnetic force with time, and can scan the electron beam EB in the X direction on the film forming material 50 in the container 4. it can. The electron beam EB travels to the positive side in the X direction and travels to the negative side in the Z direction, and enters the film forming material 50 in the housing portion 4. Some of the electrons contained in the electron beam EB are reflected by the film forming material 50 to become reflected electrons E1.

  The adsorption unit 6 can adsorb the reflected electrons E1. The adsorbing part 6 is arranged on the side of the accommodating part 4. The adsorption unit 6 is disposed at a position where the reflected electrons E1 from the storage unit 4 enter. The suction part 6 of the present embodiment is located on the opposite side (positive side in the X direction) to the incident side (negative side in the X direction) of the electron beam EB with respect to the accommodating part 4 in the horizontal direction with respect to the accommodating part 4. Have been placed.

  The adsorption part 6 is formed of a conductive material at least at the part where the reflected electrons are incident. The material of the adsorption unit 6 is selected in consideration of heat resistance, heat dissipation, conductivity, and the like against radiant heat from the storage unit 4. The adsorbing part 6 is formed of the same material (copper) as the accommodating part 4, for example. The suction unit 6 of this embodiment is electrically connected to the positive electrode of the DC power supply 14 via the wiring 13. The negative electrode of the DC power supply 14 is grounded. In the adsorption unit 6, the portion where the reflected electrons are incident is held at a positive potential with respect to the ground potential (0 V). The reflected electrons E1 incident on the adsorption unit 6 are dissipated outside the vacuum chamber 2 through the wiring 13. In addition, the adsorption | suction part 6 may be earth | grounded not via the DC power supply 14, and may be hold | maintained at earth potential.

  The vapor deposition apparatus 1 </ b> A of the present embodiment includes a magnet 15 that generates a magnetic field that deflects reflected electrons that are directed upward from the storage unit 4 in a direction toward the adsorption unit 6. The magnet 15 is configured by at least one of an electromagnet and a permanent magnet. The magnet 15 generates a magnetic force line M <b> 2 that is directed in a direction perpendicular to the direction from the housing portion 4 toward the attracting portion 6 in the horizontal direction. In the present embodiment, the magnet 15 generates a magnetic force line M2 facing in the same direction as the magnetic force line M1 generated by the deflector 12 of the irradiation unit 5. That is, the magnetic force line M2 is a magnetic force line from the positive side to the negative side in the Y direction.

  The vapor deposition apparatus 1 </ b> A according to the present embodiment includes a shutter 16 disposed between the housing unit 4 and the substrate placement unit 3. The shutter 16 can block the material vapor 51 from the housing portion 4 toward the substrate placement portion 3. The shutter 16 can be retracted from between the accommodating portion 4 and the substrate placement portion 3 so as not to block the material vapor 51 when the vapor deposition apparatus 1A performs the vapor deposition process on the substrate P.

  The magnetic field generation unit 7 is disposed above at least a part of the adsorption unit 6. The magnetic field generation unit 7 is disposed so as to overlap at least a part of the adsorption unit 6 in a direction (Z direction) from the storage unit 4 toward the predetermined range A1. The magnetic field generation unit 7 is disposed at least in a part around the direction (Z direction) from the housing unit 4 toward the predetermined range A1. The magnetic field generator 7 is supported by a support member (not shown).

  The magnetic field generator 7 is arranged so as not to block the material vapor 51 that contributes to the film formation of the substrate P. The magnetic field generation unit 7 is disposed outside the radiation range A2 of the film forming material (material vapor 51) from the housing unit 4 toward the predetermined range A1. The radiation range A2 is a space region (effective radiation range) through which the material vapor 51 attached to the film formation target region (predetermined range A1) on the substrate P passes. In the present embodiment, the radiation range A2 is a region inside an annular surface that connects the inner periphery of the opening 10 of the accommodating portion 4 and the outer periphery of the predetermined range A1.

  The magnetic field generation unit 7 is configured by at least one of a permanent magnet and an electromagnet. The magnetic field generator 7 generates a magnetic field M3 that deflects upward electrons in the horizontal direction. The magnetic field generator 7 generates the magnetic field M3 so that the upward electrons receive the Lorentz force in the horizontal direction. The magnetic field generator 7 of the present embodiment generates the magnetic field M3 so that the component in the Y direction of the Lorentz force received by the upward electrons is greater than the component in the X direction. The magnetic field generation unit 7 of the present embodiment generates a magnetic force line M4 that is directed in a direction that intersects the magnetic force lines M1 of the magnetic field generated by the deflector 12 of the irradiation unit 5.

  The magnetic field generator 7 of the present embodiment is composed of a permanent magnet. The magnetic field generator 7 extends in a direction intersecting the X direction. The magnetic field generator 7 extends linearly in the Y direction. In the magnetic field generator 7, one side in the width direction (X direction) intersecting the extending direction (Y direction) is an N pole, and the other side is an S pole. In the present embodiment, the negative side in the X direction in the magnetic field generator 7 is the N pole, and the positive side in the X direction is the S pole.

  In the present embodiment, the strength of the magnetic field M3 generated by the magnetic field generation unit 7 is set so that the influence on the magnetic field generated by the deflector 12 of the irradiation unit 5 is within an allowable range. The strength of the magnetic field M3 is set, for example, so as to be 5 G or less at the opening 10 of the housing portion 4.

  In the magnetic field generator 7, the positive side in the X direction may be the N pole, and the negative side in the X direction may be the S pole. The magnetic field generator 7 may extend in a direction that forms an angle of 0 ° or more and less than 90 ° with the X direction in the horizontal direction. The magnetic field generation unit 7 may include a portion extending in a curve. The magnetic field generator 7 may be curved around the Z direction. The magnetic field M3 generated by the magnetic field generator 7 may affect the magnetic field generated by the deflector 12. In this case, the deflector 12 may generate a magnetic field so as to cancel the deviation of the trajectory of the electron beam EB due to the magnetic field M3.

  In the vapor deposition apparatus 1A configured as described above, since the adsorption unit 6 is disposed at a position where the reflected electrons E1 reflected by the film forming material 50 are incident, the reflected unit E1 can be effectively removed by the adsorption unit 6. Can do. When the reflected electrons E1 enter the adsorption unit 6, secondary electrons E2 may be generated from the adsorption unit 6 due to the energy received by the adsorption unit 6 from the reflected electrons E1. In addition, a part of the reflected electrons E1 may enter the base 9 or the like between the accommodation unit 4 and the adsorption unit 6 and may be reflected upward by the base 9. When the reflected electrons E1 enter the base 9, secondary electrons E2 may be generated from the base 9 due to the energy received by the base 9 from the reflected electrons E1. In the vicinity of the adsorption part 6, the possibility that the reflected electrons E1 and the secondary electrons E2 are generated is higher than the other part of the vapor deposition apparatus 1A.

  Part of the secondary electrons E2 generated around the adsorption unit 6 scatters upward. The secondary electrons E2 scattered upward from the adsorption unit 6 are deflected in the horizontal direction by the magnetic field M3 generated by the magnetic field generation unit 7. The secondary electrons E <b> 2 whose kinetic energy is lower than the threshold value are spirally moved around the magnetic force lines M <b> 4 of the magnetic field M <b> 3 by the Lorentz force and are captured by the magnetic field generator 7.

  Thus, in the vapor deposition apparatus 1 </ b> A, the magnetic field generator 7 captures the secondary electrons E <b> 2 by the magnetic force, so that the secondary electrons E <b> 2 toward the substrate P can be reduced. Further, the reflected electrons E1 directed upward from the adsorption unit 6 are deflected in the horizontal direction by the magnetic field M3 generated by the magnetic field generation unit 7 and travel in a direction different from the direction toward the substrate P. Thus, the vapor deposition apparatus 1A can reduce the number of reflected electrons E1 toward the substrate P.

  Further, the magnetic field generator 7 generates a magnetic force line M4 that is directed in a direction intersecting with the magnetic force lines M1 of the magnetic field generated by the deflector 12 of the irradiation unit 5. Therefore, the electrons deflected by the magnetic field generation unit 7 are deflected in a direction crossing the direction toward the storage unit 4, and are prevented from proceeding in an unexpected direction by the magnetic field generated by the deflector 12. Therefore, the secondary electrons E2 facing the substrate P can be reduced.

  As described above, the vapor deposition apparatus 1A can reduce the reflected electrons E1 and secondary electrons E2 that reach the substrate P, and can suppress the substrate P from being deteriorated by electrons. As described above, an organic layer may be formed in advance on the substrate P before the vapor deposition process in the process of manufacturing the organic electroluminescence element. In general, an organic layer is easily deteriorated by incidence of electrons as compared with a layer made of an inorganic material. Since the vapor deposition apparatus 1A can reduce the amount of electrons incident on the substrate, for example, deterioration of the organic layer can be suppressed, and the yield of the organic electroluminescence element can be improved.

  In the above embodiment, the irradiation unit 5 deflects the electron beam EB by about 270 ° and irradiates the film forming material 50. However, the angle (deflection angle) by which the irradiation unit 5 deflects the electron beam EB is 270. It may be less than °. The deflection angle may be 180 ° or 90 °. Further, the irradiation unit 5 may irradiate the film forming material 50 without deflecting the electron beam EB.

  The vapor deposition apparatus 1A can also be used to form a film by a mask vapor deposition method using a vapor deposition mask or the like. The vapor deposition mask has an opening corresponding to the film pattern to be formed. The vapor deposition mask is disposed between the substrate P and the accommodating portion 4. For example, the vapor deposition mask is disposed in contact with the vapor deposition surface Pa of the substrate P. The substrate placement unit 3 may be capable of holding a vapor deposition mask together with the substrate P.

[Second Embodiment]
A second embodiment will be described. FIG. 4 is a side view of the inside of the vapor deposition apparatus of the second embodiment as viewed from the side.

  The vapor deposition apparatus 1 </ b> B of the present embodiment includes a vacuum chamber 17 and a substrate placement unit 18. The inside of the vacuum chamber 17 is partitioned into an upper part 20 and a lower part 21 by a partition plate 19. The partition plate 19 has a window 22 arranged in a predetermined range A1. The upper part 20 and the lower part 21 communicate with each other inside the window 22.

  In the lower part 21 of the vacuum chamber 17, the irradiation unit 5, the accommodation unit 4, the adsorption unit 6, and the magnetic field generation unit 7 described in the first embodiment are arranged. Material vapor 51 from the lower portion 21 can flow through the window 22 to the upper portion 20. In the present embodiment, the radiation range A3 of the material vapor 51 from the housing portion 4 toward the predetermined range A1 is a region inside the annular surface that connects the inner periphery of the window 22 and the inner periphery of the opening 10 of the housing portion 4. is there.

  The substrate placement unit 18 is placed on the upper part 20. The upper part 20 is a transport path for the substrate P. The substrate placement unit 18 can hold the substrate P and transport it in the first direction (X direction). The substrate placement unit 18 can transport the substrate P within a range including the predetermined range A1. The substrate placement unit 18 can transport the substrate P so that the region of the substrate P to be deposited is placed inside the window 22. The substrate placement unit 18 of the present embodiment can carry in and out the substrate P between the outside and inside of the vacuum chamber 2 through a load lock mechanism (not shown) attached to the vacuum chamber 2.

  The magnetic field generator 7 causes the magnetic field M3 to be deflected more than the first direction in the second direction (Y direction) intersecting the first direction, which is the transport direction of the substrate P, in the horizontal direction in the upward direction. generate. In other words, the magnetic field generation unit 7 generates the magnetic field M3 so that the component force in the second direction of the Lorentz force received by the upward electrons is larger than the component force in the first direction.

  As shown in FIG. 2, the reflected electrons E1 and secondary electrons E2 pointing upward are deflected in the Y direction by the Lorentz force received from the magnetic field M3. In other words, the reflected electrons E1 and secondary electrons E2 facing upward are polarized in a direction intersecting with the transport direction of the substrate P. Therefore, electrons generated during the deposition process of the substrate P are less likely to enter the substrate located upstream or downstream of the transport direction than the substrate P.

  As described above, the vapor deposition apparatus 1B according to the second embodiment can reduce the number of electrons incident on the substrate P during the vapor deposition process, and can reduce the number of electrons incident on another substrate placed on the transport path separately from the substrate P. be able to.

[Third Embodiment]
A third embodiment will be described. FIG.5 and FIG.6 is the side view which looked at the vapor deposition apparatus of 3rd Embodiment from the side. FIG. 5 shows a vapor deposition apparatus during calibration. FIG. 6 shows a vapor deposition apparatus during the vapor deposition process.

  The vapor deposition apparatus 1 </ b> C of this embodiment includes a measurement unit 23, a change unit 24, and a control unit 25. The changing unit 24 can measure the amount of electrons incident on the predetermined range A1. The changing unit 24 can change the direction of the magnetic force line M4 of the magnetic field M3 generated by the magnetic field generating unit 7 shown in FIG. The control unit 25 can control the changing unit 24 based on the measurement result of the measurement unit 23.

  The measurement unit 23 of this embodiment includes a dummy substrate 26 and a sensor 27. The substrate placement unit 18 can hold the dummy substrate 26. The substrate placement unit 18 can place the dummy substrate 26 in a predetermined range A1 with one side 28 of the dummy substrate 26 facing downward. The dummy substrate 26 has at least one side 28 formed of a conductive material. The sensor 27 is electrically connected to the dummy substrate 26. The sensor 27 can measure the charge amount of the dummy substrate 26.

  In the measurement unit 23, the charge amount of the dummy substrate 26 increases as the amount of electrons incident on the one side 28 of the dummy substrate 26 disposed in the predetermined range A1 increases. Therefore, based on the measurement result of the sensor 27, the amount of electrons incident on the predetermined range A1 can be measured.

  Note that the measurement unit 23 may be able to measure the amount of electrons incident on the predetermined range A <b> 1 by the sensor 27 measuring the current from the dummy substrate 26. The measurement unit 23 may be capable of measuring the amount of electrons incident on the predetermined range A <b> 1 by the sensor 27 measuring the potential of the dummy substrate 26 with respect to the ground potential.

  The changing unit 24 of the present embodiment can rotate the magnetic field generating unit 7 around a rotation axis parallel to the horizontal direction. In the present embodiment, the rotation axis is set parallel to the Y direction. When the changing unit 24 rotates the magnetic field generating unit 7, the direction of the magnetic force lines M4 of the magnetic field generated by the magnetic field generating unit 7 changes around the rotation axis.

  The control unit 25 of this embodiment is configured by a computer system having a CPU, a memory, and a storage unit. The control unit 25 can control the changing unit 24 to rotate the magnetic field generating unit 7 at a rotation angle. The control unit 25 can receive the measurement result of the measurement unit 23 and store the measurement result of the measurement unit 23 in association with the rotation angle of the magnetic field generation unit 7.

  Further, the control unit 25 of the present embodiment can control the pressure inside the vacuum chamber 17 by controlling the decompression device 8. The control unit 25 can control the irradiation unit 5 to irradiate the film forming material 50 in the storage unit 4 with the electron beam EB. The control unit 25 can control the substrate holding unit 18 to transport the substrate P or the dummy substrate 26 held by the substrate holding unit 18.

  In the present embodiment, the calibration of the magnetic field generator 7 is executed at a timing that is appropriately selected in a period in which the vapor deposition process is not performed on the device manufacturing substrate P. As shown in FIG. 5, the dummy substrate 26 is placed in a predetermined range A1 by the substrate placement unit 18 when performing calibration. The irradiation unit 5 irradiates the film forming material 50 in the storage unit 4 with the electron beam EB under the same conditions as in the vapor deposition process in a state where the dummy substrate 26 is disposed in the predetermined range A1. When the film forming material 50 is irradiated with the electron beam EB, the control unit 25 controls the changing unit 24 to rotate the magnetic field generating unit 7 to change the direction of the magnetic force lines generated by the magnetic field generating unit 7.

  The control unit 25 stores the measurement result of the measurement unit 23 in association with the rotation angle of the magnetic field generation unit 7 while changing the rotation angle of the magnetic field generation unit 7. The control unit 25 refers to a value associated with the rotation angle of the magnetic field generation unit 7 as a value indicating the amount of electrons incident on the predetermined range A1, and when the amount of electrons incident on the predetermined range A1 is minimized. The rotation angle of the magnetic field generator 7 (hereinafter referred to as the optimum rotation angle) is obtained. As shown in FIG. 6, when performing the vapor deposition process on the device manufacturing substrate P, the control unit 25 controls the changing unit 24 to set the rotation angle of the magnetic field generation unit 7 to the optimum rotation angle. Set. The vapor deposition apparatus 1 </ b> C of the present embodiment performs a vapor deposition process on the device manufacturing substrate P in a state where the rotation angle of the magnetic field generation unit 7 is fixed to the optimum rotation angle.

  The vapor deposition apparatus 1C having the above-described configuration can change the direction of the magnetic force lines M4 by the magnetic field generation unit 7 based on the measured value of the amount of electrons incident on the predetermined range A1, and therefore enters the substrate P. The amount of electrons can be controlled. Thereby, the vapor deposition apparatus 1 </ b> C can also minimize the amount of electrons incident on the substrate P.

[Fourth Embodiment]
A fourth embodiment will be described. FIG. 7: is the side view which looked at the inside of the vapor deposition apparatus of 4th Embodiment from the side. The vapor deposition apparatus 1D of this embodiment includes a capturing unit 28 that captures, by electrostatic force, electrons deflected by the magnetic field M3 generated by the magnetic field generating unit 7.

  The capturing unit 28 of the present embodiment includes a conductive member 29, a wiring 30, and a DC power supply 31 that are arranged so as to intersect with the magnetic force line M <b> 4 of the magnetic field M <b> 3. The conductive member 29 is made of a non-magnetic metal having conductivity, such as aluminum or copper. The conductive member 29 according to the present embodiment is provided on each of the N pole end face and the S pole end face of the magnetic field generator 7. The DC power supply 31 can apply a positive voltage to the conductive member 29 through the wiring 30.

  The DC power supply 31 of the present embodiment applies a positive voltage of 50 V or more to the conductive member 29. A positive electrode of the DC power supply 31 is electrically connected to the conductive member 29 via the wiring 30. The negative electrode of the DC power supply 31 is grounded. Note that the DC power supply 31 may be shared with the DC power supply 14 that applies a positive voltage to the suction unit 6. The DC power supply 31 may apply a higher voltage than the DC power supply 14, or may apply a lower voltage.

  In the vapor deposition apparatus 1D having the above-described configuration, as described in the first embodiment, the electrons moving upward are spirally moved so as to be entangled with the magnetic force lines M4 of the magnetic field M3 generated by the magnetic field generation unit 7, while being electrically conductive. Proceed toward 29. When the electrons traveling toward the conductive member 29 approach the conductive member 29, the electrons are attracted to the conductive member 29 by electrostatic force between the conductive member 29 and the conductive member 29. The electrons that have reached the conductive member 29 are dissipated outside the vacuum chamber 2 through the wiring 30.

  As described above, the vapor deposition apparatus 1 </ b> D can reduce electrons from the inside of the vacuum chamber 2 by guiding the upward electrons to the conductive member 29 by the magnetic field generation unit 7. Therefore, the possibility that electrons floating in the vacuum chamber 2 reach the substrate P is reduced, and the number of electrons incident on the substrate P can be reduced.

[Fifth Embodiment]
A fifth embodiment will be described. FIG. 8: is the side view which looked at the inside of the vapor deposition apparatus of 5th Embodiment from the side. The vapor deposition apparatus 1 </ b> E of the present embodiment includes a magnetic body 32 that blocks the magnetic field lines M <b> 4 from the magnetic field generator 7 toward the substrate placement unit 3. The magnetic body 32 is, for example, a yoke, and is arranged so as to short-circuit the magnetic lines of force from the north pole of the magnetic field generator 7 to the south pole through the top of the magnetic field generator 7. In the vapor deposition apparatus 1E of the present embodiment, since the magnetic lines directed from the magnetic field generation unit 7 to the substrate placement unit 3 are blocked by the magnetic body 32, electrons directed to the substrate placement unit 3 through the magnetic field lines can be reduced.

DESCRIPTION OF SYMBOLS 1A-1E ... Deposition apparatus, 3 ... Substrate arrangement | positioning part, 4 ... Accommodating part, 5 ... Irradiation part, 6 ... Adsorption part,
7 ... Magnetic field generation unit, 18 ... Substrate placement unit, 23 ... Measurement unit, 24 ... Change unit, 25 ... Control unit,
28 ... Capture unit, 32 ... Magnetic body, 50 ... Film-forming material, 51 ... Material vapor, A1 ... Predetermined range, A2, A3 ... Radiation range, E1 ... Reflected electrons, E2 ... secondary electrons, EB ... electron beam, M3 ... magnetic field, M4 ... magnetic field lines, P ... substrate, Pa ... vapor deposition surface

Claims (5)

A deposition apparatus for depositing a film forming material on the surface of a substrate,
A substrate placement section capable of placing the substrate with the deposition surface of the substrate facing downward in a predetermined range set in advance as a range in which the film forming material can be deposited;
An accommodating portion that is disposed below the substrate arranging portion and accommodates the film-forming material emitted to the predetermined range;
An irradiation unit for irradiating the storage unit with an electron beam;
An adsorbing part that is arranged on the side of the accommodating part and adsorbs electrons;
A magnetic field generating unit that is disposed at least above the adsorption unit outside the radiation range of the film-forming material from the housing unit toward the predetermined range, and generates a magnetic field that deflects electrons toward the horizontal direction horizontally. A vapor deposition apparatus comprising the vapor deposition apparatus. The substrate placement unit can transport the substrate in a first direction of the horizontal direction within a range including the predetermined range;
2. The vapor deposition apparatus according to claim 1, wherein the magnetic field generation unit deflects upward electrons in a second direction that intersects the first direction in the horizontal direction rather than the first direction. . A measurement unit for measuring the amount of electrons incident on the predetermined range;
A changing unit that changes the direction of the magnetic field lines of the magnetic field generated by the magnetic field generating unit;
The vapor deposition apparatus according to claim 1, further comprising: a control unit that controls the change unit based on a measurement result of the measurement unit.   The vapor deposition apparatus according to any one of claims 1 to 3, further comprising a capturing unit that captures, by electrostatic force, electrons deflected by the magnetic field generated by the magnetic field generating unit.   The vapor deposition apparatus according to claim 1, further comprising a magnetic body that blocks a magnetic field line from the magnetic field generation unit toward the substrate placement unit.

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