JP2003306768A - Film deposition system and film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a system and a method for depositing a film, by which the brightness property of a dielectric film deposited on the whole surface of a substrate is made uniform when a MgO film is deposited by an ion plating method using a plurality of sheet-like plasma flows while moving the substrate. <P>SOLUTION: In the film deposition system, the dielectric film is deposited on the surface for film deposition of the substrate 11 while moving a film material 22 in an environment where a plasma is formed. The film deposition system has a carrying mechanism for carrying the substrate in a prescribed direction, a plasma flow generating unit 25 for generating a plurality of plasma flows 24 along the carrying direction of the substrate by using a magnetic field, a plurality of film material sources 23 which are provided so as to correspond to each of the plurality of plasma flows and onto which the plasma flows are irradiated, an opening part 17 for defining an area for supplying the film material, and a plate-like magnetic body 16 which is arranged at the back face side of the substrate so as to correspond to the opening part 17. <P>COPYRIGHT: (C)2004,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus or a film forming method, and in particular, it has a uniform property on a large-area substrate by discharging a film material by plasma such as an ion plating method or a sputtering method. An apparatus and method for forming a film. The film forming apparatus and the film forming method are particularly suitable for forming a dielectric film such as a magnesium oxide film on a large-area substrate as a protective film for a plasma display panel electrode.

[0002]

2. Description of the Related Art Conventionally, as a method of depositing a magnesium oxide film on a substrate inside a vacuum container or a vacuum container, a vacuum vapor deposition method, a sputtering method and an ion plating method are known. The vacuum deposition method using an electron beam is
Since the input current is as low as 1A, the film deposition rate is slow,
Further, it is difficult to mass-produce a dense and highly crystalline film with good stability. The sputtering method can deposit a film having excellent characteristics on a substrate having a small area. However, according to the sputtering method, the sputtering rate of the magnesium oxide material itself is low. In order to improve it, a reactive sputtering method of magnesium metal is proposed.
However, even in this reactive sputtering method, since the deposition rate is slow, further improvement is required to cope with a large area substrate. Since the ion plating method can apply a large current of about 100 A, it is possible to obtain good film characteristics that are excellent in deposition rate and adhesion strength. Therefore, the ion plating method is considered to be suitable for mass production.

From the above, at present, the ion plating method and the sputtering method are being studied as the film forming technology which can be applied to the production of a large-sized plasma display panel (hereinafter referred to as “PDP”). Above all, expectations are high for the ion plating method.

A conventional technique related to the ion plating method is, for example, Japanese Patent Laid-Open No. 2-228469.
JP-A No. 9-170074 and JP-A No. 9-170074 can be mentioned. The ion plating method disclosed in Japanese Unexamined Patent Publication (Kokai) No. 2-228469 includes a plasma flow generator including a composite cathode, an intermediate electrode, and a magnetic field generating mechanism as a device configuration. The plasma flow generator provides a sheet-shaped plasma flow to the crucible or container containing the film material. JP-A-9-17
In the PDV device disclosed in Japanese Patent Laid-Open No. 0074, a pressure gradient plasma gun is provided, and a plasma flow deformed into a sheet shape by a sheet-forming permanent magnet is supplied to the film material in the crucible.

[0005]

Generally, the ion plating method for depositing a magnesium oxide film on a substrate is
A sheet-shaped plasma flow generated by a plasma flow generator in a vacuum container is used as a vapor deposition material (film material).
The magnesium oxide is irradiated to fly the vapor deposition material in the direction of the substrate. When depositing a film on a large-area substrate, it is common to use a plurality of plasma flow generators (plasma sources) arranged in a predetermined layout.

For example, in the case of a device having a combination unit consisting of three sets of plasma sources and vapor deposition material containers, a large rectangular substrate of 1350 mm × 950 mm is passed over the three vapor deposition material containers and the surface of the substrates is A magnesium oxide film (MgO film) is deposited. The three combination units are arranged in a row at predetermined intervals within the width of the board in a direction orthogonal to the moving direction of the board. The rectangular PDP manufactured by depositing a film on the substrate by the above-mentioned device has a problem that a low luminance portion is generated in a long and narrow region in the moving direction at the center of the substrate.

In the conventional ion plating method, the plasma flow generator comprises a plasma gun, a focusing coil and a sheet magnet. Due to the configuration, the direction of incidence of magnetic force lines generated based on the magnetic force line generation unit (or magnetic field generation unit) included in this plasma flow generation device is various with respect to the film formation surface of the substrate. In addition, mutual interference occurs between plasma streams when utilizing plasma streams from multiple plasma sources. as a result,
Distribution occurs in the film quality of magnesium oxide deposited on the film formation surface of the substrate.

When X-ray diffraction measurement of the light emitting portion (high luminance portion) and the low luminance portion on the surface of the PDP was performed, the light emitting portion was crystallized into MgO (111) and the low luminance portion was amorphous (non-luminous). Crystal). The reason for this is assumed as follows. Ions generated by discharge, which is a feature of the ion plating method, impacts the substrate with secondary electrons generated when the plasma flow impacts the deposition material and electrons generated in the plasma space when reaching the substrate. Is known to do. It is presumed that oxygen ions are desorbed from the surface of the MgO film deposited on the substrate by these electrons (including secondary electrons), and the crystallinity of magnesium oxide may be changed by the movement of atoms around it. Further, there is a deviation in the amount of electrons incident on the substrate, and it is speculated that plasma interference may promote the difference in brightness of the light emission luminance.

In consideration of the presumed causes as described above,
There is a demand for urgent development of a technique for solving the above-mentioned problem of nonuniform film characteristics of the MgO film on the substrate surface.

In view of the above-mentioned problems, an object of the present invention is to provide a film forming apparatus that homogenizes the characteristics of a film on the entire surface when a film material is generated using plasma to deposit the film on the surface of the substrate. It is to provide a film forming method.

Another object of the present invention is to move MgO on one surface of a substrate by an ion plating method utilizing a plurality of sheet-shaped plasma flows while moving a large-area substrate in one direction.
It is an object of the present invention to provide a film forming apparatus and a film forming method for uniformly forming the brightness characteristics of the dielectric film on the entire surface of the substrate when forming a dielectric film such as a film.

[0012]

The film forming apparatus and the film forming method according to the present invention are configured as follows in order to achieve the above object.

In the present invention, the electrons in the plasma atmosphere are positively made incident on the entire film-forming surface of the substrate. In particular, the electrons are allowed to flow uniformly over the entire film-forming surface of the substrate. This makes it possible to form a uniform dielectric film over a large-area substrate.

First film forming apparatus (corresponding to claim 1): This film forming apparatus moves a film material with respect to a surface on which a film is to be formed (film forming surface) of a substrate in an environment where plasma is generated. This is an apparatus for depositing a dielectric film on the film formation surface. In this film forming apparatus, a magnetic body for adjusting the distribution of magnetic force lines on the film forming surface side is provided in a region opposite to the film forming surface of the substrate. In the above film forming apparatus, for example, a plasma flow generator is provided in a region on the film forming surface side of the substrate, the film material is generated by the plasma flow generated by the apparatus, and the film material is directed toward the film forming surface of the substrate. And proceed to form a film. The plasma flow generator is equipped with a magnet and a coil that generate a magnetic field to generate a required plasma flow. The distribution of magnetic lines of force on the film-forming surface side formed by these magnetic field generation mechanisms is adjusted by the magnetic body. The distribution of the magnetic force lines based on the magnetic substance is adjusted so that the electrons in the plasma are uniformly incident on the entire film formation surface of the substrate.

In the second film forming apparatus (corresponding to claim 2), in the first apparatus configuration, preferably, the substrate is moved by the transfer mechanism, and plasma is generated on the film forming surface of the substrate through the opening. It is made to face the area where it is. With this configuration, it is possible to limit the region where the film material advances to the film formation surface of the substrate. Further, the magnetic lines of force at least in the openings are set so as to be surface-dispersed on the film formation surface of the substrate.

The third film forming apparatus (corresponding to claim 3) preferably has the second apparatus configuration in which the magnetic body has a plate shape and the magnetic body is parallel to the substrate in the moving direction of the substrate. It is characterized by being placed in. By making the surface of the plate-shaped magnetic body parallel to the substrate, it is possible to enhance the effect of magnetic field line distribution.

In a fourth film forming apparatus (corresponding to claim 4), in each of the above apparatus configurations, preferably, a substrate heating mechanism is provided in a region opposite to the substrate film forming surface, and the magnetic substance is used as a substrate. It is characterized by being placed between the substrate heating mechanisms.
Due to the structure of the apparatus, the magnetic body can be attached in a compact structure, and the concentration of the magnetic field lines on the film formation surface of the substrate can be effectively avoided.

The fifth film forming apparatus (corresponding to claim 5) is the same as the second apparatus, but the size of the surface of the magnetic body on the substrate side is substantially equal to the size of the range of the opening. Or greater. With this configuration, the magnetic lines of force at least at the openings are dispersed on the film formation surface of the substrate. When the size of the magnetic substance on the substrate surface side is substantially equal to the size of the range of the opening, it is desirable that the shapes are also equal.

In a sixth film forming apparatus (corresponding to claim 6), in each of the above apparatus configurations, preferably, a film is formed on the substrate by a mechanism for performing an ion plating method or a sputtering method.

Seventh film forming apparatus (corresponding to claim 7): This film forming apparatus forms a film by moving a film material with respect to a film forming surface of a substrate in an environment where plasma is generated in a vacuum container. This is an apparatus for depositing a dielectric film on a surface. This film forming apparatus includes a transfer mechanism that transfers a substrate in a predetermined direction, a plasma flow generator that creates a plurality of plasma flows along the transfer direction of the substrate by using a magnetic field, and a plurality of plasma flows. A plurality of film material sources arranged corresponding to each other, to which the plasma flow is irradiated, an opening defining a region for supplying the film material, and a plate-like member arranged on the back side of the substrate corresponding to the opening. And a magnetic body. According to this configuration, a dielectric film is formed on one surface of a large-sized substrate which is of a substrate passing type and is formed by an ion plating method. In the film formation of such a dielectric film, the distribution of magnetic lines of force on the film formation surface side of the substrate created by the magnetic field generation mechanism provided in the plasma flow generation device is dispersed, and electrons generated in plasma are generated on the film formation surface of the substrate. So that it is evenly incident on. As a result, the film quality of the dielectric film deposited on the film formation surface of the substrate is homogenized over the entire surface.

The eighth film forming apparatus (corresponding to claim 8) is the same as the seventh apparatus, except that the dielectric film is a MgO film and the substrate is a substrate used for a large plasma display panel.

First film forming method (corresponding to claim 9): In this film forming method, a film material is moved to a film forming surface of a substrate in an environment where plasma is generated, and a dielectric material is formed on the film forming surface. It is a method of depositing a film. In this film forming method, the magnetic field is used to determine the magnetic field distribution formed on the side of the film forming surface of the substrate.
It is adjusted so that the electrons generated in the plasma are evenly distributed and incident on the film formation surface of the substrate.

The second film forming method (corresponding to claim 10) is
In the first method described above, preferably, the magnetic body has a plate shape and is arranged parallel to the substrate.

The third film forming method (corresponding to claim 11) is
In each of the above film forming methods, preferably, the film forming is performed by an ion plating method or a sputtering method.

[0025]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

The configurations, shapes, sizes, and arrangement relationships described in the embodiments are merely shown to the extent that the present invention can be understood and put into practice, and the numerical values and the compositions (materials) of the respective components are shown. Is only an example. Therefore, the present invention is not limited to the embodiments described below, and can be modified into various forms without departing from the scope of the technical idea shown in the claims.

In this embodiment, an example of a substrate passage type ion plating device will be described as a film forming device. However, the technical idea of the present invention is not limited to this device. It may be a stop type device.

FIG. 1 shows the structure of the ion plating apparatus. FIG. 1 is a side view showing an internal configuration of a main part of the ion plating apparatus. In this ion plating apparatus, the substrate 11 is in the moving state, and the film is formed on the substrate 11 in the moving state. The substrate 11 is a relatively large rectangular glass substrate, and a film is formed on one surface (the lower surface in FIG. 1) of the substrate 11. The film formed on the film formation surface of the substrate 11 is a MgO film and is an example of a dielectric film.

The ion plating apparatus shown in FIG. 1 is provided with a load lock chamber (LL chamber) 13 communicating with the gate valve 12 and a film forming chamber 14 for forming a film by the ion plating method. The inside of the film forming chamber 14 is maintained in a required vacuum state (or reduced pressure state) during film formation. In order to maintain the inside of the film forming chamber 14 in a vacuum state,
The film forming chamber 14 is equipped with an exhaust device (not shown).

The film forming chamber 14 is provided with a buffer chamber (BU chamber) 15 in which the substrate 11 loaded from the LL chamber 13 is on standby. In addition, the LL chamber 13 and the film forming chamber 14
The BU chamber 15 is provided with a transfer device (not shown) that transfers the tray on which the substrate 11 is mounted. The arrow A indicates the transport direction of the substrate 11. A heating mechanism 16 for heating the substrate 11 to a predetermined temperature is provided on the upper side of the transfer device. The substrate heating mechanism 16 is, for example, a lamp heater.

An opening 17 is formed in the lower wall 14a of the film forming chamber 14. A vacuum chamber 21 equipped with, for example, three sets of vapor deposition sources and plasma generation mechanisms is provided below the opening 17. The evaporation source is a hearth 23 containing, for example, a MgO (magnesium oxide) material 22 as a film material. The plasma generation mechanism is a plasma flow generation device 25 that generates a plasma flow 24 traveling leftward as shown in FIG. The plasma flow 24 has a width and is formed in a sheet shape when seen in a plan view. The plasma flow generator 25 includes an Ar gas introduction mechanism (not shown) that introduces an Ar (argon) gas 26a, and a plasma gun 26 that applies energy to the Ar gas to cause discharge and to generate and emit plasma. A focusing coil 27 that narrows the released plasma to form a plasma flow 24 and a sheet magnet 28 that forms the plasma flow 24 into a sheet. An anode magnet 29 is arranged outside the vacuum chamber 21 below the hearth 23. The anode magnet 29 is a means for guiding the plasma stream 24 to the surface of the vapor deposition material. With the above structure, the sheet-shaped plasma flow 24 emitted from the plasma flow generator 25 is applied to the MgO material 22 in the hearth 23. Thus MgO
The material 22 is evaporated and advances to the lower surface of the substrate 11. The above evaporation sources and plasma generation mechanisms are arranged in a line in the direction perpendicular to the paper surface of FIG. 1 for three sets.

As the plasma flow generator 25 used in this embodiment, for example, a plasma source manufactured by Chugai Furnace Co., Ltd. is used. Although not described in the above embodiment, it is also preferable to introduce oxygen gas in the vicinity of the opening 17 in order to adjust the film quality of the MgO film deposited on the lower surface of the substrate 11.

In the ion plating apparatus having the above structure, the substrate 11 and the heating mechanism 1 are located at the front position of the heating mechanism 16 in the film forming chamber 14, that is, at the lower position in FIG.
Near board between 6 (distance that does not contact tray)
A plate member (magnetic plate member or plate-shaped magnetic member) 31 made of a magnetic material is arranged in parallel with the substrate 11. Plate material 31
Has a rectangular planar shape. In the example shown in FIG. 1, since the substrate 11 is conveyed while maintaining the horizontal state, the plate material 31
Is also held horizontally. Illustration of the attachment mechanism of the plate member 31 is omitted. The material of the plate material 31 made of a magnetic material is, for example, SUS430, permalloy, iron material, or the like. The size and shape are determined in accordance with the size and shape of the opening 17, and are at least the range in which the opening 17 is formed, and preferably,
When the substrate 11 is 1350 × 950 mm, it is 1800 × 1200 mm so as to cover the region near the sheet magnet 28 of the plasma flow generator 25.

The substrate 11 on which the MgO film is to be deposited is placed on a horizontal tray and horizontally transported by the transport device. When the substrate 11 is loaded into the LL chamber 13, the LL chamber 13
The internal space of is exhausted to a required pressure by an exhaust device (not shown). After that, the substrate 11 is heated to a required temperature by the heating mechanism. After that, the gate valve 12 is opened and the substrate 11 is carried into the film forming chamber 14 and temporarily waits in the BU chamber 15 via the film forming chamber 14, and in this state, the internal space of the film forming chamber 14 and the like is exhausted (not shown). Further exhausted by the device,
At the same time, it is further heated by the heating mechanism 16 until it reaches 300 ° C.

When the pressure in the film forming chamber 14 reaches 0.1 Pa or less, discharge gas is generated by the plasma gun 26 while supplying Ar gas in the plasma flow generator 25 (arrow 26a) while supplying discharge power of 15 KW. Generate plasma. The plasma emitted from the plasma gun 26 is transformed into a sheet-shaped plasma stream 24 by the focusing coil 27, the sheet magnet 28, and the anode magnet 29, and the MgO material 22 is irradiated with the plasma. Mg shocked by sheet-like plasma stream 24
The O material 22 is evaporated and advances toward the lower surface of the substrate 11. The internal spaces such as the vacuum chamber 21 and the film forming chamber 14 are generally in a plasma state (plasma atmosphere). When the plasma flow generator 25 is operated in this manner, and at the same time, 200 sccm of oxygen gas is introduced into the predetermined location by the oxygen gas introduction mechanism as described above, the MgO film is deposited on the lower surface of the substrate 11 at a high film formation rate of 10 nm / sec. To be done.

Since electrons generally flow along magnetic lines of force (lines representing magnetic flux), in the ion plating apparatus, secondary electrons generated when a plasma flow is introduced into the vapor deposition source and electrons in the plasma atmosphere are Plasma flow generator 2
It collides with the surface of the board | substrate 11 along the magnetic force line originating in 5. In the embodiment of the present invention, since the magnetic material plate member 31 is provided on the back surface side of the substrate 11, the distribution state of the magnetic force lines on the film formation surface on the front surface side of the substrate 11 is changed by the action of the magnetic material. The change of the magnetic force line distribution state on the film formation surface of the substrate 11 is a change for adjustment for dispersing the magnetic force lines. By thus dispersing the magnetic force lines in the vicinity of the surface of the substrate 11 by the magnetic plate member 31, the magnetic flux density thereof is preferably set to about 5 to 10 gauss over the entire film formation surface of the substrate 11. This value is about half or less as compared with the ion plating device in which the magnetic plate member 31 is not provided, and the magnetic flux density can be made uniform over the entire surface of the substrate. As a result, the electrons guided by the magnetic lines of force dispersed in the region near the film formation surface of the substrate 11 are incident on the surface of the substrate 11, so that the electrons are substantially uniformly incident on the substrate surface. That is, the incident density of electrons becomes uniform over the entire surface of the large-sized substrate 11, so that the quality of the MgO film becomes uniform, and as a result, unevenness in the light emission luminance of the plasma display panel electrode can be reduced.

The contents of the above operation will be described in more detail with reference to FIGS.

FIG. 2 shows the focusing coil 2 when the magnetic plate member 31 is not provided in the ion plating apparatus.
7 shows a simulation of a magnetic field line distribution generated by No. 7. A portion indicated by a line 11a in FIG. 2 is a substrate surface, and shows a film formation surface on which a film is deposited. This magnetic field line distribution is shown by a large number of small black triangles. The sharp tip of each triangle indicates the direction of the magnetic field lines. As is clear from this figure, the magnetic plate material 31
In the case where no is present, the incident direction of the magnetic force lines is non-uniform on the substrate surface 11a, and unevenness is generated on the entire surface of the substrate.

Similar to FIG. 2, FIG. 3 and FIG. 4 show simulations of magnetic field line distribution generated by the converging coil 27 when the magnetic plate member 31 is not provided in the ion plating apparatus. FIG. 3 shows the distribution of the horizontal component of the magnetic force line, and FIG. 4 shows the vertical component of the magnetic force line. Figure 3
Further, FIG. 4 shows a layout of three sets of evaporation sources and the plasma flow generator 25, which are arranged at regular intervals in the horizontal direction (vertical direction in the drawing) perpendicular to the substrate transport direction. Regarding the evaporation source, three anode magnets 29 are shown. The anode magnet 29 is formed by arranging a plurality of small magnet blocks in a line. In each of the three sets of plasma flow generators 25, only the converging coil 27 and the sheet magnet 28 viewed from above are shown. In FIGS. 3 and 4, A indicates the direction of substrate transfer. Further, in FIGS. 3 and 4, a range 41 indicates a film formation region in the width direction, and a range 42 indicates a film formation region in the substrate transport direction. Therefore, the regions 41 and 42 define a rectangular film forming region.
Regarding the horizontal component of the magnetic field lines shown in FIG. 3, the maximum value is 75 gauss and the spacing is 5 gauss. Concerning the vertical component of the magnetic field lines shown in FIG.
There is a maximum value of 55 Gauss on the right side of. Further, there is a 50 gauss portion in the region between the sheet magnets 28.

As is clear from the distribution of the magnetic force lines shown in FIGS. 3 and 4, when the magnetic plate member 31 is not provided, the distribution of the magnetic force lines in the rectangular film forming region defined by the ranges 41 and 42 is It occurs unevenly.

FIG. 5 and FIG. 6 show simulations of magnetic force line distribution generated by the converging coil 27 when the magnetic plate member 31 is provided in the ion plating apparatus. FIG. 5 shows the distribution of the horizontal component of the magnetic force lines, and FIG. 6 shows the vertical component of the magnetic force lines. 5 and 6 show the layout of three sets of evaporation sources and the plasma flow generator 25, which are arranged at regular intervals in the lateral direction perpendicular to the substrate transfer direction. Regarding the evaporation source, three anode magnets 29 are shown. In each of the three sets of plasma flow generators 25, the focusing coil and the sheet magnet are shown from above. In FIGS. 5 and 6, a range 41 indicates a film formation region in the width direction, and a range 42 indicating a film formation region in the substrate transport direction is omitted.

In FIGS. 5 and 6, the rectangular area 51 indicates the area where the magnetic plate member 31 is arranged. Comparing with the squares shown in the rectangular region 51 and comparing with FIG. 3 and FIG. 4, when the magnetic plate member 31 is arranged, the distribution of magnetic force lines in the film forming region is uniform over the entire film forming region. It is distributed. As described above, when the magnetic plate member 31 is arranged as shown in FIG. 1, the distribution of the magnetic force lines on the film formation surface side of the substrate 11 is made uniform,
As a result, it is possible to generate the above-described action of dispersing the electrons generated in the plasma and making them uniformly incident on the film formation surface of the substrate 11.

In the above structure, the magnetic plate member 3 is used.
1 to the substrate 11 side, or a plasma flow generator 2
When the large-sized magnetic material plate member 31 is arranged in the direction of 5,
It can be seen that the distribution of the magnetic lines of force on the substrate film formation surface is further improved.

In the embodiments of the present invention, the ion plating method has been described, but the same effect can be considered in a sputtering apparatus which is a method of forming a film by generating plasma. For example, in a pass-through magnetron sputtering apparatus, a MgO target or a Mg target is sputtered with Ar gas or a mixed gas of Ar gas and oxygen gas to deposit a magnesium oxide film on a substrate. In the case of magnetron sputtering, a tunnel-shaped region having a high electron density is formed on the target surface, and the ion density on the substrate surface is not as high as that of an ion plating device, but it is possible that it contributes to a fine crystal structure. Also in this case, it is considered necessary to control the electron injection over the entire large area.

The present invention can also be applied to the stationary type or the stationary type. Further, it is not always necessary to provide the opening.

[0046]

As is apparent from the above description, according to the present invention, in the case of forming a dielectric film such as a MgO film on a substrate which will be a PDP electrode by a film forming apparatus typically using an ion plating method. Since the electrons generated in the plasma atmosphere are dispersed so that they are made incident uniformly on the entire film formation surface of the substrate, a large-capacity investment is not required, and a dielectric film such as magnesium oxide is simple and inexpensive. Can be manufactured at high speed.

[Brief description of drawings]

FIG. 1 is a schematic vertical sectional view of an ion plating apparatus which is an example of a film forming apparatus according to the present invention.

FIG. 2 is a schematic longitudinal cross-sectional view of a main portion showing a magnetic field line distribution on the substrate film formation surface side when a magnetic plate material is not provided in the ion plating apparatus.

FIG. 3 is a plan view showing a distribution of horizontal components of magnetic force lines in a film forming region in the case where a magnetic plate material is not provided in the ion plating apparatus.

FIG. 4 is a plan view showing a distribution of vertical components of magnetic force lines in a film formation region when a magnetic plate material is not provided in the ion plating apparatus.

FIG. 5 is a plan view showing a distribution of horizontal components of magnetic force lines in a film forming region when a magnetic plate member is provided in the ion plating apparatus.

FIG. 6 is a plan view showing a distribution of vertical components of magnetic force lines in a film formation region when a magnetic plate material is provided in the ion plating apparatus.

[Explanation of symbols]

11 board 14 Deposition chamber 16 heating mechanism 17 openings 21 vacuum chamber 22 MgO material 23 Hearth 24 plasma flow 25 Plasma flow generator

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Shoji Hatayama             5-8 Yotsuya, Fuchu-shi, Tokyo Anel             Within BA Co., Ltd. (72) Inventor Hitoshi Nakagawara             5-8 Yotsuya, Fuchu-shi, Tokyo Anel             Within BA Co., Ltd. F term (reference) 4K029 AA24 BA43 BC00 BD00 CA04                       CA06 DA08 EA06 JA00

Claims (11)

[Claims] 1. A film forming apparatus for moving a film material to a surface of a substrate in an environment where plasma is generated to deposit a dielectric film on the surface, the side being opposite to the surface of the substrate. A film forming apparatus, wherein a magnetic body for adjusting the distribution of magnetic lines of force on the surface side is provided in the area. 2. The substrate is moved by a transfer mechanism, and the surface of the substrate is exposed to a region where the plasma is generated through an opening.
The film forming apparatus described. 3. The film forming apparatus according to claim 2, wherein the magnetic body has a plate shape, and the magnetic body is arranged parallel to the substrate in a moving direction of the substrate. 4. The heating mechanism is provided in the area on the opposite side, and the magnetic body is disposed between the substrate and the heating mechanism. The film forming apparatus described. 5. The film forming apparatus according to claim 2, wherein the size of the surface of the magnetic body on the substrate side is substantially equal to or larger than the size of the range of the opening. 6. The film forming apparatus according to claim 1, wherein a film is formed on the substrate by a mechanism for performing an ion plating method or a sputtering method. 7. A film forming apparatus for moving a film material to a surface of a substrate in an environment in which plasma is generated in a vacuum container to deposit a dielectric film on the surface, the substrate being moved in a predetermined direction. A transport mechanism for transporting, a plasma flow generator for generating a plurality of plasma flows along a transport direction of the substrate by using a magnetic field, and a plasma flow generator arranged corresponding to each of the plurality of plasma flows, A plurality of film material sources irradiated with a flow of plasma, an opening defining a region for supplying the film material, a plate-shaped magnetic body arranged on the back side of the substrate corresponding to the opening, A film forming apparatus comprising: 8. The film forming apparatus according to claim 7, wherein the dielectric film is a MgO film, and the substrate is used for a large-sized plasma display panel. 9. A film forming method for moving a film material to a surface of a substrate in an environment where plasma is generated to deposit a dielectric film on the surface, the method comprising: A film forming method, wherein the distribution of magnetic force lines formed on the surface side is adjusted so that the electrons generated in the plasma are evenly distributed and incident on the surface of the substrate. 10. The film forming method according to claim 7, wherein the magnetic body has a plate shape and is arranged parallel to the substrate. 11. The film is formed by an ion plating method or a sputtering method.
Alternatively, the film forming method described in 10 above.