TWI677058B - 晶片封裝體與製造方法 - Google Patents

晶片封裝體與製造方法 Download PDF

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TWI677058B
TWI677058B TW107104845A TW107104845A TWI677058B TW I677058 B TWI677058 B TW I677058B TW 107104845 A TW107104845 A TW 107104845A TW 107104845 A TW107104845 A TW 107104845A TW I677058 B TWI677058 B TW I677058B
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sealant layer
carrier
chip package
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TW201926591A (zh
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楊望來
Wang-Lai Yang
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大陸商訊芯電子科技(中山)有限公司
Shunsin Technology (Zhong Shan) Limited
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Abstract

一種晶片封裝體，包括：承載件；半導體元件，設置於承載件，並通過第一導電元件電性連接承載件；第一封膠層，形成於承載件上並覆蓋半導體元件；光學元件，設置於第一封膠層上，並通過第二導電元件耦接上述承載件；以及第二封膠層，形成於第一封膠層上並覆蓋上述光學元件，第二封膠層之透光率大於第一封膠層。

Description

晶片封裝體與製造方法
本發明係有關於一種晶片封裝體與製造方法，尤指一種整合微機電系統與光學感應晶片的晶片封裝體與製造方法。
隨著移動終端及可穿戴電子產品的發展，越來越多的產品將光學感應晶片與一些微機電系統(Micro-electromechanical Systems，MEMS)晶片整合在一起。由於光學感應晶片與微機電系統晶片堆疊在一起時會導致厚度增加，且光學感應晶片需要透光才能執行光學感應功能，因此需要執行透光膠體封裝製程，在執行透光膠體封裝製程時，容易發生打線彎曲以及內應力過大的問題。
有鑑於此，在本發明中，使用多次封膠製程以提高產品的可靠度。
本發明一實施例揭露一種晶片封裝體，包括：一承載件；一半導體元件，設置於上述承載件，並通過第一導電元件電性連接上述承載件；一第一封膠層，形成於上述承載件上並覆蓋上述半導體元件；一光學元件，設置於上述第一封膠層上，並通過第二導電元件耦接上述承載件；以及一第二封膠層，形成於上述第一封膠層上並覆蓋上述光學元件，其中上述第二封膠層之透光率大於上述第一封膠層。
本發明一實施例揭露一種晶片封裝體製造方法，包括下列步驟：提供一承載件，具有一第一表面以及相對於上述第一表面之第二表面，其中上述承載件具有一內連線結構，穿過上述承載件並露出於上述第一表面與上述第二表面；設置一半導體元件於上述承載件之上述第一表面；形成一第一導電元件以電性連接上述內連線結構與上述半導體元件；形成一第一封膠層於上述承載件上並覆蓋上述半導體元件；形成一穿孔於上述第一封膠層以露出上述內連線結構；填充金屬材料至上述穿孔以形成一金屬插塞；設置一光學元件於上述第一封膠層上；形成一第二導電元件以電性連接上述金屬插塞與上述光學元件；形成第二封膠層於上述第一封膠層上並覆蓋上述光學元件，其中上述第二封膠層之透光率大於上述第一封膠層。
根據本發明一實施例，所述之晶片封裝體更包括一第三導電元件，形成於上述第一封膠層中，並電性連接上述第一導電元件與上述第二導電元件。
根據本發明一實施例，其中上述第三導電元件為金屬插塞。
根據本發明一實施例，其中上述承載件具有一第一表面以及相對於上述第一表面之第二表面，且上述承載件具有一內連線結構，穿過上述承載件並電性連接至上述第一導電元件與上述第二導電元件。
根據本發明一實施例，其中上述半導體元件具有微機電系統電路。
根據本發明一實施例，其中上述第二封膠層之厚度小於上述第一封膠層。
根據本發明一實施例，其中上述第二封膠層之熱膨脹係數大於上述第一封膠層。
根據本發明一實施例，其中上述第一封膠層之材質為深色環氧樹脂材料。
根據本發明一實施例，其中上述第二封膠層之材質為透光環氧樹脂材料。
為了便於本領域普通技術人員理解和實施本發明，下面結合附圖與實施例對本發明進一步的詳細描述，應當理解，本發明提供許多可供應用的發明概念，其可以多種特定型式實施。文中所舉例討論的特定實施例僅為製造與使用本發明的特定方式，非用以限制本發明的範圍。此外，在不同實施例中可能使用重複的標號或標示。這些重複僅為了簡單清楚地敘述本發明，不代表所討論的不同實施例及/或結構之間具有任何關連性。再者，當述及一第一材料層位於一第二材料層上或之上時，包括第一材料層與第二材料層直接接觸或間隔有一或更多其他材料層的情形。
本發明一實施例的晶片封裝體可用以封裝微機電系統晶片。然其應用不限於此，例如在本發明的晶片封裝體的實施例中，其可應用於各種包含有源元件或無源元件(active or passive elements)、數位電路或類比電路(digital or analog circuits)等積體電路的電子元件(electronic components)，例如是有關於光電元件(optoelectronic devices)、微機電系統(Micro-electromechanical Systems，MEMS)、生物辨識元件、微流體系統(microfluidic systems)、或利用熱、光線及壓力等物理量變化來測量的物理感測器(Physical Sensor)。特別是可選擇使用晶圓級封裝(wafer scale package，WSP)製程對影像感測裝置、發光二極體(light-emitting diodes，LEDs)、太陽能電池(solar cells)、射頻元件(RF circuits)、加速計(accelerators)、陀螺儀(gyroscopes)、指紋辨識器、微制動器(micro actuators)、表面聲波元件(surface acoustic wave devices)、壓力感測器(process sensors)或噴墨頭(ink printer heads)等半導體晶片進行封裝。
圖1係顯示根據本發明一實施例所述之晶片封裝體的剖面示意圖。參閱圖1，顯示根據本發明一實施例所述之晶片封裝體100包括承載件10、半導體元件12、封膠層14、光學元件16以及封膠層18。根據本發明一實施例所述之承載件10可為基板，具有內連線結構11A、11B，內連線結構11A、11B穿過承載件10並提供與其他元件電性連接的功能。
半導體元件12設置於承載件10，半導體元件12之一接腳通過導電元件13電性連接承載件10之內連線結構11A，在本實施例中，導電元件13可為焊線(wire bond)。根據本發明一實施例，半導體元件12可為微機電系統晶片，例如包括聲學揚聲器，麥克風，射頻（RF）濾波器，RF天線，加速度計，陀螺儀，化學傳感器，溫度傳感器，濕度傳感器，壓力傳感器或電子羅盤，以及控制器等裝置。
封膠層14形成於承載件10上並覆蓋半導體元件12。封膠層14可提供機械穩定性及抵抗氧化、濕度及其它環境條件的保護。根據本發明一實施例，封膠層14可由一封裝材料(molding material)形成。該封裝材料可包括酸醛基樹脂(Novolac-based resin)、環氧基樹脂(epoxy-based resin)、矽基樹脂(silicone-based resin)或其它適當的包覆劑。該封裝材料亦可包括適當的填充劑(filler)，例如是粉狀的二氧化矽。該封裝材料可以是預浸漬材料(pre-impregnated material)，例如是預浸漬介電材料。根據本發明一實施例，封膠層14之材質可選擇與半導體元件12具有接近之熱膨脹係數（coefficients of thermal expansion，CTE)以避免半導體元件12因為溫度變化而彎曲，在本發明實施例中，封膠層14之材質可使用深色或黑色之環氧基樹脂。另外，封膠層14中具有導電元件15A、15B。導電元件15A電性連接承載件10之內連線結構11A，而導電元件15B電性連接承載件10之內連線結構11B。根據本發明一實施例，導電元件15A、15B可為貫穿封膠層14之插塞(plug)，導電元件15A穿過封膠層14與承載件10相鄰之底面並與承載件10之內連線結構11A接觸，且穿過封膠層14遠離承載件10之頂面並露出。同樣的，導電元件15B穿過封膠層14與承載件10相鄰之底面並與承載件10之內連線結構11B接觸，且穿過封膠層14遠離承載件10之頂面並露出。
光學元件16設置於封膠層14上，光學元件16之一接腳通過導電元件17A電性連接導電元件15A，另一接腳通過導電元件17B電性連接導電元件15B，在本實施例中，導電元件17A、17B可為焊線(wire bond)。根據本發明一實施例，光學元件16可為光感測器。在本實施例中，由於導電元件17A、17B係分別電性連接至導電元件15A、15B露出封膠層14遠離承載件10之頂面的位置，而非電性連接至內連線結構11A、11B之位置，因此減少焊線彎曲的程度，並降低製程的複雜度。
封膠層18形成於封膠層14上並覆蓋光學元件16。封膠層18與封膠層14同樣可提供機械穩定性及抵抗氧化、濕度及其它環境條件的保護。根據本發明一實施例，封膠層18可由一封裝材料(molding material)形成。該封裝材料可包括酸醛基樹脂(Novolac-based resin)、環氧基樹脂(epoxy-based resin)、矽基樹脂(silicone-based resin)或其它適當的包覆劑。該封裝材料亦可包括適當的填充劑(filler)，例如是粉狀的二氧化矽。該封裝材料可以是預浸漬材料(pre-impregnated material)，例如是預浸漬介電材料。根據本發明一實施例，為了使光學元件16執行光偵測功能，封膠層18之材質可選擇透光率較高的材料，例如淺色或透明之環氧基樹脂，因此封膠層18相對於封膠層14明顯具有較高之透光率。再者，如圖一所示，封膠層18之厚度較封膠層14薄，因此可允許使用熱膨脹係數較封膠層14高之材料。
圖2A-圖2G係顯示根據本發明一實施例所述之半導體封裝方法的剖面示意圖。必須說明的是，在說明本發明一些實施例中，說明書以特定步驟順序說明本發明之方法以及（或）程序。然而，由於方法以及程序並未必然根據所述之特定步驟順序實施，因此並未受限於所述之特定步驟順序。熟習此項技藝者可知其他順序也為可能之實施方式。因此，於說明書所述之特定步驟順序並未用來限定申請專利範圍。再者，本發明針對方法以及（或）程序之申請專利範圍並未受限於其撰寫之執行步驟順序，且熟習此項技藝者可瞭解調整執行步驟順序並未跳脫本發明之精神以及範圍。
參閱圖2A，首先提供承載件10，承載件10可為基板，具有表面101以及相對於表面101之表面103。另外， 顯示根據本發明一實施例所述之承載件10具有內連線結構11A、11B，分別穿過承載件10並露出於表面101與表面103。接下來，透過著晶(die attach) 程序將半導體元件12設置於承載件10之表面101。根據本發明一實施例，半導體元件12可為微機電系統晶片，例如包括聲學揚聲器，麥克風，射頻（RF）濾波器，RF天線，加速度計，陀螺儀，化學傳感器，溫度傳感器，濕度傳感器，壓力傳感器或電子羅盤，以及控制器等裝置。
參閱圖2B，執行著線程序，將導電元件13電性連接於內連線結構11A與半導體元件12之一接腳，在本實施例中，導電元件13可為焊線(wire bond)。
參閱圖2C，執行第一封膠程序，形成封膠層14於承載件10並覆蓋半導體元件12。根據本發明一實施例，封膠層14可由一封裝材料(molding material)形成。該封裝材料可包括酸醛基樹脂(Novolac-based resin)、環氧基樹脂(epoxy-based resin)、矽基樹脂(silicone-based resin)或其它適當的包覆劑。該封裝材料亦可包括適當的填充劑(filler)，例如是粉狀的二氧化矽。該封裝材料可以是預浸漬材料(pre-impregnated material)，例如是預浸漬介電材料。根據本發明一實施例，封膠層14之材質可選擇與半導體元件12具有接近之熱膨脹係數（coefficients of thermal expansion，CTE)以避免半導體元件12因為溫度變化而彎曲，在本發明實施例中，封膠層14之材質可使用深色或黑色之環氧基樹脂。
參閱圖2D，於封膠層14鑽孔以形成穿孔150A、150B，穿孔150A、150B係穿過封膠層14並使得內連線結構11A、11B露出。
參閱圖2E，執行填孔，將金屬材料填充至穿孔150A、150B以形成導電元件15A、15B，導電元件15A、15B可為貫穿封膠層14之插塞(plug)。導電元件15A電性連接承載件10之內連線結構11A，而導電元件15B電性連接承載件10之內連線結構11B。根據本發明一實施例，導電元件15A穿過封膠層14與承載件10相鄰之底面並與承載件10之內連線結構11A接觸，且穿過封膠層14遠離承載件10之頂面並露出。同樣的，導電元件15B穿過封膠層14與承載件10相鄰之底面並與承載件10之內連線結構11B接觸，且穿過封膠層14遠離承載件10之頂面並露出。
參閱圖2F，透過著晶(die attach) 程序將光學元件16設置於封膠層14上。根據本發明一實施例，光學元件16可為光感測器。
參閱圖2G，執行著線程序，將導電元件17A電性連接於導電元件15A與光學元件16之一接腳，並將導電元件17B電性連接於導電元件15B與光學元件16之另一接腳。在本實施例中，導電元件17A、17B可為焊線(wire bond)。
參閱圖2H，執行第二封膠程序，形成封膠層18於封膠層14上並覆蓋光學元件16。根據本發明一實施例，封膠層18可由一封裝材料(molding material)形成。該封裝材料可包括酸醛基樹脂(Novolac-based resin)、環氧基樹脂(epoxy-based resin)、矽基樹脂(silicone-based resin)或其它適當的包覆劑。該封裝材料亦可包括適當的填充劑(filler)，例如是粉狀的二氧化矽。該封裝材料可以是預浸漬材料(pre-impregnated material)，例如是預浸漬介電材料。根據本發明一實施例，為了使光學元件16執行光偵測功能，封膠層18之材質可選擇透光率較高的材料，例如淺色或透明之環氧基樹脂。最後，執行切割(Singulation)程序，完成根據本發明一實施例所述之晶片封裝體。
根據本發明實施例，由於透明封膠材料通常具有收縮率較大的特性，且膠層越厚，封裝後晶片封裝體彎曲的程度越大，因此本發明實施例透過使用多次封膠程序代替傳統的單次封膠程序，用以包覆半導體元件12之封膠層14較厚，可選擇與半導體元件12具有接近之熱膨脹係數（coefficients of thermal expansion，CTE) 之材質以避免半導體元件12因為溫度變化而彎曲，並可增加晶片封裝體之剛性。在本發明實施例中所使用之深色或黑色之環氧基樹脂具有此特性，因此作為封膠層14之材質。另外，在第一次封膠後，通過鑽孔、填孔、佈線等程序將承載件10之內連線結構11A、11B引到封膠層14表面，減少了焊線彎曲的程度，並降低製程的複雜度。而在實施第二次封膠時，則選擇透光率較高的材料作為封膠層18以配合光學元件16的光偵測功能。如此一來，根據本發明實施例所述之晶片封裝體既能符合封裝體剛性要求，又能兼顧使用透光封膠的需要，改善了產品的可靠度。
綜上所述，本發明符合發明專利要件，爰依法提出專利申請。惟，以上該者僅爲本發明之較佳實施方式，本發明之範圍並不以上述實施方式爲限，舉凡熟悉本案技藝之人士爰依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。
10‧‧‧承載件
12‧‧‧半導體元件
14‧‧‧封膠層
16‧‧‧光學元件
18‧‧‧封膠層
11A、11B‧‧‧內連線結構
13、15A、15B、17A、17B‧‧‧導電元件
100‧‧‧晶片封裝體
101、103‧‧‧表面
150A、150B穿孔
圖1係顯示根據本發明一實施例所述之晶片封裝體的剖面示意圖。
圖2A-圖2H係顯示根據本發明一實施例所述之半導體封裝方法的剖面示意圖。
無

Claims (13)

  1. 一種晶片封裝體，包括：一承載件；一半導體元件，設置於上述承載件，並通過第一導電元件耦接上述承載件；一第一封膠層，形成於上述承載件上並覆蓋上述半導體元件；一光學元件，設置於上述第一封膠層上，並通過第二導電元件耦接上述承載件；一第二封膠層，形成於上述第一封膠層上並覆蓋上述光學元件，其中上述第二封膠層之透光率大於上述第一封膠層；以及一金屬插塞，形成於上述第一封膠層中，並電性連接上述第一導電元件與上述第二導電元件。
  2. 如申請專利範圍第1項所述之晶片封裝體，其中上述承載件具有一第一表面以及相對於上述第一表面之第二表面，且上述承載件具有一內連線結構，穿過上述第一表面與上述第二表面並電性連接至上述第一導電元件與上述第二導電元件。
  3. 如申請專利範圍第1項所述之晶片封裝體，其中上述半導體元件具有微機電系統電路。
  4. 如申請專利範圍第1項所述之晶片封裝體，其中上述第二封膠層之厚度小於上述第一封膠層。
  5. 如申請專利範圍第1項所述之晶片封裝體，其中上述第二封膠層之熱膨脹係數大於上述第一封膠層。
  6. 如申請專利範圍第1項所述之晶片封裝體，其中上述第一封膠層之材質為深色樹脂。
  7. 如申請專利範圍第1項所述之晶片封裝體，其中上述第二封膠層之材質為透光樹脂。
  8. 一種晶片封裝體製造方法，包括下列步驟：提供一承載件，具有一第一表面以及相對於上述第一表面之第二表面，其中上述承載件具有一內連線結構，穿過上述承載件並露出於上述第一表面與上述第二表面；設置一半導體元件於上述承載件之上述第一表面；形成一第一導電元件以電性連接上述內連線結構與上述半導體元件；形成一第一封膠層於上述承載件上並覆蓋上述半導體元件；形成一穿孔於上述第一封膠層以露出上述內連線結構；填充金屬材料至上述穿孔以形成一金屬插塞；設置一光學元件於上述第一封膠層上；形成一第二導電元件以電性連接上述金屬插塞與上述光學元件；形成第二封膠層於上述第一封膠層上並覆蓋上述光學元件，其中上述第二封膠層之透光率大於上述第一封膠層。
  9. 如申請專利範圍第8項所述之晶片封裝體製造方法，其中上述半導體元件具有微機電系統電路。
  10. 如申請專利範圍第8項所述之晶片封裝體製造方法，其中上述第二封膠層之厚度小於上述第一封膠層。
  11. 如申請專利範圍第8項所述之晶片封裝體製造方法，其中上述第二封膠層之熱膨脹係數大於上述第一封膠層。
  12. 如申請專利範圍第8項所述之晶片封裝體製造方法，其中上述第一封膠層之材質為深色樹脂。
  13. 如申請專利範圍第8項所述之晶片封裝體製造方法，其中上述第二封膠層之材質為透光樹脂。
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