TWI672401B - 矽熔湯中控制熱流的裝置 - Google Patents

矽熔湯中控制熱流的裝置 Download PDF

Info

Publication number
TWI672401B
TWI672401B TW104109274A TW104109274A TWI672401B TW I672401 B TWI672401 B TW I672401B TW 104109274 A TW104109274 A TW 104109274A TW 104109274 A TW104109274 A TW 104109274A TW I672401 B TWI672401 B TW I672401B
Authority
TW
Taiwan
Prior art keywords
heat dissipation
heat
dissipation barrier
exposed surface
crucible
Prior art date
Application number
TW104109274A
Other languages
English (en)
Chinese (zh)
Other versions
TW201542889A (zh
Inventor
彼德Ｌ 凱勒曼
菲德梨克Ｍ 卡爾森
大衛 莫雷爾
阿拉 莫瑞迪亞
南帝斯 德塞
Original Assignee
美商瓦里安半導體設備公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商瓦里安半導體設備公司 filed Critical 美商瓦里安半導體設備公司
Publication of TW201542889A publication Critical patent/TW201542889A/zh
Application granted granted Critical
Publication of TWI672401B publication Critical patent/TWI672401B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
TW104109274A 2014-03-27 2015-03-24 矽熔湯中控制熱流的裝置 TWI672401B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/227,006 2014-03-27
US14/227,006 US10415151B1 (en) 2014-03-27 2014-03-27 Apparatus for controlling heat flow within a silicon melt

Publications (2)

Publication Number Publication Date
TW201542889A TW201542889A (zh) 2015-11-16
TWI672401B true TWI672401B (zh) 2019-09-21

Family

ID=54196233

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109274A TWI672401B (zh) 2014-03-27 2015-03-24 矽熔湯中控制熱流的裝置

Country Status (7)

Country Link
US (2) US10415151B1 (enExample)
EP (1) EP3122921A4 (enExample)
JP (1) JP6613243B2 (enExample)
KR (1) KR102348598B1 (enExample)
CN (1) CN106133208B (enExample)
TW (1) TWI672401B (enExample)
WO (1) WO2015148181A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022543358A (ja) * 2019-08-09 2022-10-12 リーディング エッジ イクウィップメント テクノロジーズ インコーポレイテッド 酸素濃度の低い領域を有するリボンまたはウェハの製造
MX2022010077A (es) 2020-02-19 2022-09-29 Leading Edge Equipment Tech Inc Control activo de borde de una lamina cristalina formada en la superficie de una masa fundida.
CN115210414A (zh) * 2020-02-19 2022-10-18 尖端设备技术公司 使用组合的表面冷却和熔体加热控制在熔体表面上形成的结晶板片的厚度和宽度

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US8262797B1 (en) * 2007-03-13 2012-09-11 Solaicx, Inc. Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264497A (en) 1978-02-14 1981-04-28 Maruko Seiyaku Co., Ltd. 1,5-Benzothiazepine compounds
JPS5845191A (ja) 1981-09-14 1983-03-16 エナジ−・マテリアルズ・コ−ポレイシヨン 結晶性リボンを製造するための方法及び装置
AU543747B2 (en) 1981-09-17 1985-05-02 Energy Materials Corp. Single crystal ribbons
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
US4468281A (en) 1982-12-27 1984-08-28 Atlantic Richfield Company Silicon ribbon growth wheel and method for heat flow control therein
DE3803769A1 (de) * 1988-02-08 1989-08-17 Siemens Ag Verfahren zum herstellen von duennen, bandfoermigen siliziumkristallen mit ebener oberflaeche, geeignet fuer die solarzellenfertigung
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
JP2813592B2 (ja) 1989-09-29 1998-10-22 住友シチックス株式会社 単結晶製造方法
JP2710704B2 (ja) * 1991-07-08 1998-02-10 シャープ株式会社 光記録媒体駆動装置
JP3018738B2 (ja) 1992-05-25 2000-03-13 三菱化学株式会社 単結晶製造装置
JP3769800B2 (ja) * 1996-01-12 2006-04-26 株式会社Ｓｕｍｃｏ 単結晶引上装置
WO2003038161A1 (en) 2001-11-01 2003-05-08 Midwest Research Institute Shallow melt apparatus for semicontinuous czochralski crystal growth
JP3882141B2 (ja) 2002-06-13 2007-02-14 日鉱金属株式会社 気相成長装置および気相成長方法
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7641733B2 (en) 2004-09-01 2010-01-05 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
US7855087B2 (en) 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
US8691008B2 (en) * 2009-03-31 2014-04-08 Memc Electronic Materials, Inc. Systems for weighing a pulled object
US20120280429A1 (en) 2011-05-02 2012-11-08 Gt Solar, Inc. Apparatus and method for producing a multicrystalline material having large grain sizes
CN102260903B (zh) 2011-07-11 2013-07-24 浙江碧晶科技有限公司 一种生长薄板硅晶体的方法
US20130213296A1 (en) 2012-02-17 2013-08-22 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a melt
US9863063B2 (en) * 2012-12-18 2018-01-09 Corner Star Limited Weir for inhibiting melt flow in a crucible

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US8262797B1 (en) * 2007-03-13 2012-09-11 Solaicx, Inc. Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process

Also Published As

Publication number Publication date
WO2015148181A1 (en) 2015-10-01
US20190284715A1 (en) 2019-09-19
CN106133208B (zh) 2020-04-28
KR20160138181A (ko) 2016-12-02
US20190338442A1 (en) 2019-11-07
JP2017512739A (ja) 2017-05-25
KR102348598B1 (ko) 2022-01-07
EP3122921A4 (en) 2017-11-08
TW201542889A (zh) 2015-11-16
CN106133208A (zh) 2016-11-16
EP3122921A1 (en) 2017-02-01
JP6613243B2 (ja) 2019-11-27
US10415151B1 (en) 2019-09-17
US10801125B2 (en) 2020-10-13

Similar Documents

Publication Publication Date Title
CN205529143U (zh) 多晶硅铸锭炉及应用于多晶硅铸锭炉内的装置
TWI672401B (zh) 矽熔湯中控制熱流的裝置
CN106165110B (zh) 使熔体成长为结晶片的结晶器及方法
JP2012140267A (ja) ＳｉＣ単結晶の製造装置および製造方法
JP6487015B2 (ja) 溶融体から水平リボンを成長させ、溶融体からの第１材料のリボンを形成する方法
CN103890240B (zh) 设置有附加横向热源的通过定向固化制造晶体材料的设备
CN107075715A (zh) 控制在熔体成长的结晶片的厚度的装置及其方法
JP2018530500A (ja) 融液から結晶シートを形成するための装置
JP2015508745A5 (ja) 溶融体から水平リボンを成長させ、溶融体からの第１材料のリボンを形成する方法
JP2017512739A5 (enExample)
US9587324B2 (en) Apparatus for processing a melt
JP2009522201A (ja) 結晶性物質のブロックを製造するための装置および方法
TWI758311B (zh) 形成結晶片的設備以及方法
CN207483900U (zh) 一种适用于提升g8硅锭角部晶砖晶体质量异型护板
JP2019529312A5 (enExample)

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees