JP6613243B2 - シリコン融液内の熱流を制御する装置 - Google Patents

シリコン融液内の熱流を制御する装置 Download PDF

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Publication number
JP6613243B2
JP6613243B2 JP2016558387A JP2016558387A JP6613243B2 JP 6613243 B2 JP6613243 B2 JP 6613243B2 JP 2016558387 A JP2016558387 A JP 2016558387A JP 2016558387 A JP2016558387 A JP 2016558387A JP 6613243 B2 JP6613243 B2 JP 6613243B2
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Prior art keywords
diffusion barrier
melt
thermal diffusion
exposed surface
heat flow
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Expired - Fee Related
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JP2016558387A
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English (en)
Japanese (ja)
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JP2017512739A5 (enExample
JP2017512739A (ja
Inventor
エル ケラーマン ピーター
エム カールソン フレデリック
マレル デイビッド
モラディアン アラ
デサイ ナンディシュ
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ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP2016558387A 2014-03-27 2015-03-17 シリコン融液内の熱流を制御する装置 Expired - Fee Related JP6613243B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/227,006 2014-03-27
US14/227,006 US10415151B1 (en) 2014-03-27 2014-03-27 Apparatus for controlling heat flow within a silicon melt
PCT/US2015/020901 WO2015148181A1 (en) 2014-03-27 2015-03-17 Apparatus for controlling heat flow within a silicon melt

Publications (3)

Publication Number Publication Date
JP2017512739A JP2017512739A (ja) 2017-05-25
JP2017512739A5 JP2017512739A5 (enExample) 2018-04-26
JP6613243B2 true JP6613243B2 (ja) 2019-11-27

Family

ID=54196233

Family Applications (1)

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JP2016558387A Expired - Fee Related JP6613243B2 (ja) 2014-03-27 2015-03-17 シリコン融液内の熱流を制御する装置

Country Status (7)

Country Link
US (2) US10415151B1 (enExample)
EP (1) EP3122921A4 (enExample)
JP (1) JP6613243B2 (enExample)
KR (1) KR102348598B1 (enExample)
CN (1) CN106133208B (enExample)
TW (1) TWI672401B (enExample)
WO (1) WO2015148181A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022543358A (ja) * 2019-08-09 2022-10-12 リーディング エッジ イクウィップメント テクノロジーズ インコーポレイテッド 酸素濃度の低い領域を有するリボンまたはウェハの製造
MX2022010077A (es) 2020-02-19 2022-09-29 Leading Edge Equipment Tech Inc Control activo de borde de una lamina cristalina formada en la superficie de una masa fundida.
CN115210414A (zh) * 2020-02-19 2022-10-18 尖端设备技术公司 使用组合的表面冷却和熔体加热控制在熔体表面上形成的结晶板片的厚度和宽度

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US4264497A (en) 1978-02-14 1981-04-28 Maruko Seiyaku Co., Ltd. 1,5-Benzothiazepine compounds
US4289571A (en) 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
JPS5845191A (ja) 1981-09-14 1983-03-16 エナジ−・マテリアルズ・コ−ポレイシヨン 結晶性リボンを製造するための方法及び装置
AU543747B2 (en) 1981-09-17 1985-05-02 Energy Materials Corp. Single crystal ribbons
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
US4468281A (en) 1982-12-27 1984-08-28 Atlantic Richfield Company Silicon ribbon growth wheel and method for heat flow control therein
DE3803769A1 (de) * 1988-02-08 1989-08-17 Siemens Ag Verfahren zum herstellen von duennen, bandfoermigen siliziumkristallen mit ebener oberflaeche, geeignet fuer die solarzellenfertigung
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
JP2813592B2 (ja) 1989-09-29 1998-10-22 住友シチックス株式会社 単結晶製造方法
JP2710704B2 (ja) * 1991-07-08 1998-02-10 シャープ株式会社 光記録媒体駆動装置
JP3018738B2 (ja) 1992-05-25 2000-03-13 三菱化学株式会社 単結晶製造装置
JP3769800B2 (ja) * 1996-01-12 2006-04-26 株式会社Ｓｕｍｃｏ 単結晶引上装置
WO2003038161A1 (en) 2001-11-01 2003-05-08 Midwest Research Institute Shallow melt apparatus for semicontinuous czochralski crystal growth
JP3882141B2 (ja) 2002-06-13 2007-02-14 日鉱金属株式会社 気相成長装置および気相成長方法
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7641733B2 (en) 2004-09-01 2010-01-05 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
US8262797B1 (en) 2007-03-13 2012-09-11 Solaicx, Inc. Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process
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Also Published As

Publication number Publication date
WO2015148181A1 (en) 2015-10-01
US20190284715A1 (en) 2019-09-19
CN106133208B (zh) 2020-04-28
KR20160138181A (ko) 2016-12-02
US20190338442A1 (en) 2019-11-07
JP2017512739A (ja) 2017-05-25
KR102348598B1 (ko) 2022-01-07
TWI672401B (zh) 2019-09-21
EP3122921A4 (en) 2017-11-08
TW201542889A (zh) 2015-11-16
CN106133208A (zh) 2016-11-16
EP3122921A1 (en) 2017-02-01
US10415151B1 (en) 2019-09-17
US10801125B2 (en) 2020-10-13

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