JP6553089B2 - 融液を処理する装置、融液内で熱流を制御するシステム及び融液を処理する方法 - Google Patents
融液を処理する装置、融液内で熱流を制御するシステム及び融液を処理する方法 Download PDFInfo
- Publication number
- JP6553089B2 JP6553089B2 JP2016566977A JP2016566977A JP6553089B2 JP 6553089 B2 JP6553089 B2 JP 6553089B2 JP 2016566977 A JP2016566977 A JP 2016566977A JP 2016566977 A JP2016566977 A JP 2016566977A JP 6553089 B2 JP6553089 B2 JP 6553089B2
- Authority
- JP
- Japan
- Prior art keywords
- melt
- heater
- exposed surface
- heating element
- heat flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/06—Crucible or pot furnaces heated electrically, e.g. induction crucible furnaces with or without any other source of heat
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/08—Details peculiar to crucible or pot furnaces
- F27B14/14—Arrangements of heating devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B3/00—Hearth-type furnaces, e.g. of reverberatory type; Tank furnaces
- F27B3/02—Hearth-type furnaces, e.g. of reverberatory type; Tank furnaces of single-chamber fixed-hearth type
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B3/00—Hearth-type furnaces, e.g. of reverberatory type; Tank furnaces
- F27B3/10—Details, accessories, or equipment peculiar to hearth-type furnaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D99/00—Subject matter not provided for in other groups of this subclass
- F27D99/0001—Heating elements or systems
- F27D99/0006—Electric heating elements or system
- F27D2099/0008—Resistor heating
- F27D2099/0011—The resistor heats a radiant tube or surface
- F27D2099/0013—The resistor heats a radiant tube or surface immersed in the charge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
- Y10T117/1048—Pulling includes a horizontal component
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Description
Claims (14)
- 結晶シートを形成するために、融液を処理する装置において、
前記融液を容れて、前記融液が第1距離だけるつぼの床面から離れる露出面を有するよう構成したるつぼと、並びに
加熱素子、及び前記加熱素子と前記融液との間に配置し、前記加熱素子が前記融液に接触しないようにするシェルを有するサブマージヒーターと、
を備え、
前記加熱素子は、前記融液の前記露出面に対して前記第1距離よりも短い第2距離だけ離して配置し、
前記サブマージヒーターは、50W/cm 2 より大きい熱流を前記露出面に供給するよう構成する、装置。 - 請求項1記載の装置において、前記加熱素子は、炭化ケイ素でコーティングするグラファイトを含み、また前記シェルは石英ガラスを含むものとする、装置。
- 請求項1記載の装置において、前記融液はシリコンから構成し、前記シェルは石英ガラスを含むものとする、装置。
- 請求項1記載の装置において、前記サブマージヒーターは前記露出面に平行な第1方向に沿って細長いものとする、装置。
- 請求項1記載の装置において、さらに、前記露出面に直交する垂直方向に沿って前記サブマージヒーターを移動させるよう構成したドライブを備える、装置。
- 請求項5記載の装置において、前記サブマージヒーターは、可動キャップ構体であって、
前記融液に接触する接触面及び前記加熱素子に接触する外方表面を有する可動部分と、並びに
前記るつぼのるつぼ壁部分を形成する固定部分と
よりなる、該可動キャップ構体を有する、装置。 - 請求項1記載の装置において、前記サブマージヒーターは、前記るつぼのるつぼ壁の一部を形成し、かつ前記るつぼの前記床面よりも前記融液の前記露出面により近接して配置する上部領域を有し、また前記加熱素子を前記るつぼ壁の外部に配置する、装置。
- 結晶シートを形成するために、融液内で熱流を制御するシステムにおいて、
前記融液を容れ、前記融液がるつぼの床面から第1距離だけ離れる露出面を有するよう構成したるつぼと、
前記融液に接触するよう構成したサブマージヒーターであって、加熱素子及び前記加熱素子と前記融液との間に配置し、前記加熱素子が前記融液に接触しないようにするシェルを有し、
前記加熱素子は、前記融液に対して前記第1距離よりも短い第2距離の位置に配置し、前記サブマージヒーターは第1熱流流率で前記露出面の領域に熱を送給するよう構成した、
該サブマージヒーターと、並びに
前記第1熱流流率よりも大きい第2熱流流率で前記露出面の領域から熱を除去するよう構成した晶析装置と
を備え、
前記サブマージヒーターは、50W/cm 2 より大きい第1熱流を前記露出面に供給するよう構成する、システム。 - 請求項8記載のシステムにおいて、前記サブマージヒーターは石英ガラスシェルによって封入するグラファイト加熱素子を有する、システム。
- 請求項8記載のシステムにおいて、さらに、前記るつぼの前記床面の下に配置し、かつ第3熱流を送給して前記融液を前記融液の融解温度又はそれ以上に維持するように構成する、るつぼヒーターを備える、システム。
- 請求項8記載のシステムにおいて、前記晶析装置は、第1方向に沿って結晶シートの前縁を形成するよう構成し、また前記サブマージヒーターは前記第1方向に沿って細長いものとする、システム。
- 請求項8記載のシステムにおいて、さらに、前記サブマージヒーターを前記露出面に直交する垂直方向に沿って移動させるよう構成したドライブを備える、システム。
- 結晶シートを形成するために、融液を処理する方法において、
前記融液をるつぼに容れて、前記融液が、露出面及び前記るつぼと接触する底面を有し、前記露出面は前記底面から第1距離だけ離れるようにするステップと、並びに
サブマージヒーターの加熱素子から前記融液の前記露出面の領域内に熱流を方向付けるステップであって、この熱流方向付けは、前記加熱素子を前記第1距離よりも短い第2距離だけ前記露出面から離して配置するときに生ずる、熱流方向付けステップと、
を有し、
前記融液は前記加熱素子に接触しないようにし、
前記サブマージヒーターは、50W/cm 2 より大きい熱流を前記露出面に供給するよう構成する、方法。 - 前記サブマージヒーターは、前記加熱素子を包囲し、かつ前記融液に接触する石英ガラスシェルを有し、前記融液はシリコンとする請求項13記載の方法において、さらに、
前記露出面の領域内に第1熱流流率で熱流を方向付けるステップと、
前記第1熱流流率よりも大きい第2熱流流率で前記露出面の領域から熱を除去するステップと、
を有する、融液を処理する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/275,770 US9587324B2 (en) | 2014-05-12 | 2014-05-12 | Apparatus for processing a melt |
US14/275,770 | 2014-05-12 | ||
PCT/US2015/030319 WO2015175497A1 (en) | 2014-05-12 | 2015-05-12 | Apparatus for processing a melt |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2017515778A JP2017515778A (ja) | 2017-06-15 |
JP2017515778A5 JP2017515778A5 (ja) | 2018-06-14 |
JP6553089B2 true JP6553089B2 (ja) | 2019-07-31 |
Family
ID=54367314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016566977A Expired - Fee Related JP6553089B2 (ja) | 2014-05-12 | 2015-05-12 | 融液を処理する装置、融液内で熱流を制御するシステム及び融液を処理する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9587324B2 (ja) |
EP (1) | EP3142973A4 (ja) |
JP (1) | JP6553089B2 (ja) |
KR (1) | KR20170007361A (ja) |
CN (1) | CN106458687B (ja) |
TW (1) | TWI675134B (ja) |
WO (1) | WO2015175497A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4010519A4 (en) * | 2019-08-09 | 2023-09-13 | Leading Edge Equipment Technologies, Inc. | PRODUCING A RIBBON OR SLICE WITH REGIONS OF LOW OXYGEN CONCENTRATION |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5912631B2 (ja) * | 1976-01-28 | 1984-03-24 | 三菱マテリアル株式会社 | 横引きリボン結晶成長法 |
JPS5261180A (en) | 1975-11-14 | 1977-05-20 | Toyo Shirikon Kk | Horizontal growth of crystal ribbons |
US4289571A (en) | 1979-06-25 | 1981-09-15 | Energy Materials Corporation | Method and apparatus for producing crystalline ribbons |
DE3136454A1 (de) * | 1981-09-14 | 1983-03-24 | Energy Materials Corp., 01451 Harvard, Mass. | Verfahren und vorrichtung zum bilden von kristallband aus einer schmelze |
US5047113A (en) * | 1989-08-23 | 1991-09-10 | Aleksandar Ostrogorsky | Method for directional solidification of single crystals |
JP2933404B2 (ja) | 1990-06-25 | 1999-08-16 | 信越石英 株式会社 | シリコン単結晶引き上げ用石英ガラスルツボとその製造方法 |
JP2000319080A (ja) * | 1999-05-07 | 2000-11-21 | Tokai Carbon Co Ltd | 炭化珪素被覆黒鉛部材 |
US6849121B1 (en) | 2001-04-24 | 2005-02-01 | The United States Of America As Represented By The Secretary Of The Air Force | Growth of uniform crystals |
KR100588425B1 (ko) * | 2003-03-27 | 2006-06-12 | 실트로닉 아게 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
FR2927910B1 (fr) | 2008-02-27 | 2011-06-17 | Centre Nat Rech Scient | Procede de cristallogenese d'un materiau electriquement conducteur a l'etat fondu. |
US7998224B2 (en) * | 2008-10-21 | 2011-08-16 | Varian Semiconductor Equipment Associates, Inc. | Removal of a sheet from a production apparatus |
US9464364B2 (en) | 2011-11-09 | 2016-10-11 | Varian Semiconductor Equipment Associates, Inc. | Thermal load leveling during silicon crystal growth from a melt using anisotropic materials |
-
2014
- 2014-05-12 US US14/275,770 patent/US9587324B2/en active Active
-
2015
- 2015-04-23 TW TW104112956A patent/TWI675134B/zh not_active IP Right Cessation
- 2015-05-12 KR KR1020167034346A patent/KR20170007361A/ko not_active Application Discontinuation
- 2015-05-12 EP EP15792841.7A patent/EP3142973A4/en not_active Withdrawn
- 2015-05-12 CN CN201580024930.3A patent/CN106458687B/zh not_active Expired - Fee Related
- 2015-05-12 JP JP2016566977A patent/JP6553089B2/ja not_active Expired - Fee Related
- 2015-05-12 WO PCT/US2015/030319 patent/WO2015175497A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN106458687A (zh) | 2017-02-22 |
JP2017515778A (ja) | 2017-06-15 |
CN106458687B (zh) | 2020-03-13 |
US9587324B2 (en) | 2017-03-07 |
US20150322590A1 (en) | 2015-11-12 |
KR20170007361A (ko) | 2017-01-18 |
EP3142973A1 (en) | 2017-03-22 |
TWI675134B (zh) | 2019-10-21 |
WO2015175497A1 (en) | 2015-11-19 |
EP3142973A4 (en) | 2017-12-13 |
TW201604340A (zh) | 2016-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2020040874A (ja) | 融液上に成長した結晶シートの厚さを制御する装置および方法 | |
KR102348599B1 (ko) | 냉각 블록 및 가스 제트를 사용하는 결정질 시트 성장을 위한 시스템 및 방법 | |
JP6553089B2 (ja) | 融液を処理する装置、融液内で熱流を制御するシステム及び融液を処理する方法 | |
US10801125B2 (en) | Method for controlling heat flow within a silicon melt using a heat diffusion barrier assembly | |
KR102405193B1 (ko) | 결정질 시트를 형성하기 위한 장치 및 방법 | |
JP5611086B2 (ja) | 蒸着用ボートとこれを使用した成膜方法 | |
JP2007046106A (ja) | 蒸着用ボートおよびこれを備えた真空蒸着装置 | |
CN111383889B (zh) | 一种包含热相变材料的等离子处理腔 | |
JP2010006661A (ja) | 基板および析出板の製造方法 | |
JP2017512739A5 (ja) | ||
JPS6369967A (ja) | 蒸着膜形成装置 | |
JP2016121027A (ja) | 保持体、結晶製造装置および結晶の製造方法 | |
JPH01131092A (ja) | 半導体単結晶層の形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180507 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180507 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190117 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190305 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190417 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190604 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190703 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6553089 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |