AU543747B2 - Single crystal ribbons - Google Patents

Single crystal ribbons

Info

Publication number
AU543747B2
AU543747B2 AU75426/81A AU7542681A AU543747B2 AU 543747 B2 AU543747 B2 AU 543747B2 AU 75426/81 A AU75426/81 A AU 75426/81A AU 7542681 A AU7542681 A AU 7542681A AU 543747 B2 AU543747 B2 AU 543747B2
Authority
AU
Australia
Prior art keywords
single crystal
crystal ribbons
ribbons
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU75426/81A
Other versions
AU7542681A (en
Inventor
David N. Jewett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Materials Corp
Original Assignee
Energy Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Materials Corp filed Critical Energy Materials Corp
Priority to AU75426/81A priority Critical patent/AU543747B2/en
Publication of AU7542681A publication Critical patent/AU7542681A/en
Application granted granted Critical
Publication of AU543747B2 publication Critical patent/AU543747B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06Non-vertical pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
AU75426/81A 1981-09-17 1981-09-17 Single crystal ribbons Ceased AU543747B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU75426/81A AU543747B2 (en) 1981-09-17 1981-09-17 Single crystal ribbons

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AU75426/81A AU543747B2 (en) 1981-09-17 1981-09-17 Single crystal ribbons

Publications (2)

Publication Number Publication Date
AU7542681A AU7542681A (en) 1983-03-24
AU543747B2 true AU543747B2 (en) 1985-05-02

Family

ID=3756860

Family Applications (1)

Application Number Title Priority Date Filing Date
AU75426/81A Ceased AU543747B2 (en) 1981-09-17 1981-09-17 Single crystal ribbons

Country Status (1)

Country Link
AU (1) AU543747B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3122921A4 (en) * 2014-03-27 2017-11-08 Varian Semiconductor Equipment Associates, Inc. Apparatus for controlling heat flow within a silicon melt

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8764901B2 (en) 2010-05-06 2014-07-01 Varian Semiconductor Equipment Associates, Inc. Removing a sheet from the surface of a melt using elasticity and buoyancy

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3122921A4 (en) * 2014-03-27 2017-11-08 Varian Semiconductor Equipment Associates, Inc. Apparatus for controlling heat flow within a silicon melt
US10415151B1 (en) 2014-03-27 2019-09-17 Varian Semiconductor Equipment Associates, Inc Apparatus for controlling heat flow within a silicon melt
US10801125B2 (en) 2014-03-27 2020-10-13 Leading Edge Crystal Technologies, Inc. Method for controlling heat flow within a silicon melt using a heat diffusion barrier assembly

Also Published As

Publication number Publication date
AU7542681A (en) 1983-03-24

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