JP2017512739A5 - - Google Patents

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Publication number
JP2017512739A5
JP2017512739A5 JP2016558387A JP2016558387A JP2017512739A5 JP 2017512739 A5 JP2017512739 A5 JP 2017512739A5 JP 2016558387 A JP2016558387 A JP 2016558387A JP 2016558387 A JP2016558387 A JP 2016558387A JP 2017512739 A5 JP2017512739 A5 JP 2017512739A5
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JP
Japan
Prior art keywords
diffusion barrier
thermal diffusion
heat flow
shows
melt
Prior art date
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Application number
JP2016558387A
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English (en)
Japanese (ja)
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JP2017512739A (ja
JP6613243B2 (ja
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Publication date
Priority claimed from US14/227,006 external-priority patent/US10415151B1/en
Application filed filed Critical
Publication of JP2017512739A publication Critical patent/JP2017512739A/ja
Publication of JP2017512739A5 publication Critical patent/JP2017512739A5/ja
Application granted granted Critical
Publication of JP6613243B2 publication Critical patent/JP6613243B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2016558387A 2014-03-27 2015-03-17 シリコン融液内の熱流を制御する装置 Expired - Fee Related JP6613243B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/227,006 2014-03-27
US14/227,006 US10415151B1 (en) 2014-03-27 2014-03-27 Apparatus for controlling heat flow within a silicon melt
PCT/US2015/020901 WO2015148181A1 (en) 2014-03-27 2015-03-17 Apparatus for controlling heat flow within a silicon melt

Publications (3)

Publication Number Publication Date
JP2017512739A JP2017512739A (ja) 2017-05-25
JP2017512739A5 true JP2017512739A5 (enExample) 2018-04-26
JP6613243B2 JP6613243B2 (ja) 2019-11-27

Family

ID=54196233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016558387A Expired - Fee Related JP6613243B2 (ja) 2014-03-27 2015-03-17 シリコン融液内の熱流を制御する装置

Country Status (7)

Country Link
US (2) US10415151B1 (enExample)
EP (1) EP3122921A4 (enExample)
JP (1) JP6613243B2 (enExample)
KR (1) KR102348598B1 (enExample)
CN (1) CN106133208B (enExample)
TW (1) TWI672401B (enExample)
WO (1) WO2015148181A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022543358A (ja) * 2019-08-09 2022-10-12 リーディング エッジ イクウィップメント テクノロジーズ インコーポレイテッド 酸素濃度の低い領域を有するリボンまたはウェハの製造
MX2022010077A (es) 2020-02-19 2022-09-29 Leading Edge Equipment Tech Inc Control activo de borde de una lamina cristalina formada en la superficie de una masa fundida.
CN115210414A (zh) * 2020-02-19 2022-10-18 尖端设备技术公司 使用组合的表面冷却和熔体加热控制在熔体表面上形成的结晶板片的厚度和宽度

Family Cites Families (23)

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US4264497A (en) 1978-02-14 1981-04-28 Maruko Seiyaku Co., Ltd. 1,5-Benzothiazepine compounds
US4289571A (en) 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
JPS5845191A (ja) 1981-09-14 1983-03-16 エナジ−・マテリアルズ・コ−ポレイシヨン 結晶性リボンを製造するための方法及び装置
AU543747B2 (en) 1981-09-17 1985-05-02 Energy Materials Corp. Single crystal ribbons
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
US4468281A (en) 1982-12-27 1984-08-28 Atlantic Richfield Company Silicon ribbon growth wheel and method for heat flow control therein
DE3803769A1 (de) * 1988-02-08 1989-08-17 Siemens Ag Verfahren zum herstellen von duennen, bandfoermigen siliziumkristallen mit ebener oberflaeche, geeignet fuer die solarzellenfertigung
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
JP2813592B2 (ja) 1989-09-29 1998-10-22 住友シチックス株式会社 単結晶製造方法
JP2710704B2 (ja) * 1991-07-08 1998-02-10 シャープ株式会社 光記録媒体駆動装置
JP3018738B2 (ja) 1992-05-25 2000-03-13 三菱化学株式会社 単結晶製造装置
JP3769800B2 (ja) * 1996-01-12 2006-04-26 株式会社Ｓｕｍｃｏ 単結晶引上装置
WO2003038161A1 (en) 2001-11-01 2003-05-08 Midwest Research Institute Shallow melt apparatus for semicontinuous czochralski crystal growth
JP3882141B2 (ja) 2002-06-13 2007-02-14 日鉱金属株式会社 気相成長装置および気相成長方法
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7641733B2 (en) 2004-09-01 2010-01-05 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
US8262797B1 (en) 2007-03-13 2012-09-11 Solaicx, Inc. Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process
US7855087B2 (en) 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
US8691008B2 (en) * 2009-03-31 2014-04-08 Memc Electronic Materials, Inc. Systems for weighing a pulled object
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CN102260903B (zh) 2011-07-11 2013-07-24 浙江碧晶科技有限公司 一种生长薄板硅晶体的方法
US20130213296A1 (en) 2012-02-17 2013-08-22 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a melt
US9863063B2 (en) * 2012-12-18 2018-01-09 Corner Star Limited Weir for inhibiting melt flow in a crucible

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