CN106133208B - 用于控制熔体内的热流的装置及其处理方法 - Google Patents

用于控制熔体内的热流的装置及其处理方法 Download PDF

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Publication number
CN106133208B
CN106133208B CN201580014648.7A CN201580014648A CN106133208B CN 106133208 B CN106133208 B CN 106133208B CN 201580014648 A CN201580014648 A CN 201580014648A CN 106133208 B CN106133208 B CN 106133208B
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China
Prior art keywords
heat
melt
heat dissipation
crucible
barrier
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Expired - Fee Related
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CN201580014648.7A
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English (en)
Chinese (zh)
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CN106133208A (zh
Inventor
彼德·L·凯勒曼
菲德梨克·M·卡尔森
大卫·莫雷尔
阿拉·莫瑞迪亚
南帝斯·德塞
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CN201580014648.7A 2014-03-27 2015-03-17 用于控制熔体内的热流的装置及其处理方法 Expired - Fee Related CN106133208B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/227,006 2014-03-27
US14/227,006 US10415151B1 (en) 2014-03-27 2014-03-27 Apparatus for controlling heat flow within a silicon melt
PCT/US2015/020901 WO2015148181A1 (en) 2014-03-27 2015-03-17 Apparatus for controlling heat flow within a silicon melt

Publications (2)

Publication Number Publication Date
CN106133208A CN106133208A (zh) 2016-11-16
CN106133208B true CN106133208B (zh) 2020-04-28

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Country Status (7)

Country Link
US (2) US10415151B1 (enExample)
EP (1) EP3122921A4 (enExample)
JP (1) JP6613243B2 (enExample)
KR (1) KR102348598B1 (enExample)
CN (1) CN106133208B (enExample)
TW (1) TWI672401B (enExample)
WO (1) WO2015148181A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022543358A (ja) * 2019-08-09 2022-10-12 リーディング エッジ イクウィップメント テクノロジーズ インコーポレイテッド 酸素濃度の低い領域を有するリボンまたはウェハの製造
MX2022010077A (es) 2020-02-19 2022-09-29 Leading Edge Equipment Tech Inc Control activo de borde de una lamina cristalina formada en la superficie de una masa fundida.
CN115210414A (zh) * 2020-02-19 2022-10-18 尖端设备技术公司 使用组合的表面冷却和熔体加热控制在熔体表面上形成的结晶板片的厚度和宽度

Citations (8)

* Cited by examiner, † Cited by third party
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US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4468281A (en) * 1982-12-27 1984-08-28 Atlantic Richfield Company Silicon ribbon growth wheel and method for heat flow control therein
WO2003038161A1 (en) * 2001-11-01 2003-05-08 Midwest Research Institute Shallow melt apparatus for semicontinuous czochralski crystal growth
EP1533834A1 (en) * 2002-06-13 2005-05-25 Nikko Materials Co., Ltd. Vapor phase epitaxial apparatus and vapor phase epitaxial method
WO2006028868A2 (en) * 2004-09-01 2006-03-16 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
US8262797B1 (en) * 2007-03-13 2012-09-11 Solaicx, Inc. Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process
WO2013007108A1 (zh) * 2011-07-11 2013-01-17 浙江碧晶科技有限公司 一种生长薄板硅晶体的方法
US20130213296A1 (en) * 2012-02-17 2013-08-22 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a melt

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US4264497A (en) 1978-02-14 1981-04-28 Maruko Seiyaku Co., Ltd. 1,5-Benzothiazepine compounds
JPS5845191A (ja) 1981-09-14 1983-03-16 エナジ−・マテリアルズ・コ−ポレイシヨン 結晶性リボンを製造するための方法及び装置
AU543747B2 (en) 1981-09-17 1985-05-02 Energy Materials Corp. Single crystal ribbons
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
DE3803769A1 (de) * 1988-02-08 1989-08-17 Siemens Ag Verfahren zum herstellen von duennen, bandfoermigen siliziumkristallen mit ebener oberflaeche, geeignet fuer die solarzellenfertigung
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
JP2813592B2 (ja) 1989-09-29 1998-10-22 住友シチックス株式会社 単結晶製造方法
JP2710704B2 (ja) * 1991-07-08 1998-02-10 シャープ株式会社 光記録媒体駆動装置
JP3018738B2 (ja) 1992-05-25 2000-03-13 三菱化学株式会社 単結晶製造装置
JP3769800B2 (ja) * 1996-01-12 2006-04-26 株式会社Ｓｕｍｃｏ 単結晶引上装置
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7855087B2 (en) 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
US8691008B2 (en) * 2009-03-31 2014-04-08 Memc Electronic Materials, Inc. Systems for weighing a pulled object
US20120280429A1 (en) 2011-05-02 2012-11-08 Gt Solar, Inc. Apparatus and method for producing a multicrystalline material having large grain sizes
US9863063B2 (en) * 2012-12-18 2018-01-09 Corner Star Limited Weir for inhibiting melt flow in a crucible

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4289571A (en) * 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4468281A (en) * 1982-12-27 1984-08-28 Atlantic Richfield Company Silicon ribbon growth wheel and method for heat flow control therein
WO2003038161A1 (en) * 2001-11-01 2003-05-08 Midwest Research Institute Shallow melt apparatus for semicontinuous czochralski crystal growth
EP1533834A1 (en) * 2002-06-13 2005-05-25 Nikko Materials Co., Ltd. Vapor phase epitaxial apparatus and vapor phase epitaxial method
WO2006028868A2 (en) * 2004-09-01 2006-03-16 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
US8262797B1 (en) * 2007-03-13 2012-09-11 Solaicx, Inc. Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process
WO2013007108A1 (zh) * 2011-07-11 2013-01-17 浙江碧晶科技有限公司 一种生长薄板硅晶体的方法
US20130213296A1 (en) * 2012-02-17 2013-08-22 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a melt

Also Published As

Publication number Publication date
WO2015148181A1 (en) 2015-10-01
US20190284715A1 (en) 2019-09-19
KR20160138181A (ko) 2016-12-02
US20190338442A1 (en) 2019-11-07
JP2017512739A (ja) 2017-05-25
KR102348598B1 (ko) 2022-01-07
TWI672401B (zh) 2019-09-21
EP3122921A4 (en) 2017-11-08
TW201542889A (zh) 2015-11-16
CN106133208A (zh) 2016-11-16
EP3122921A1 (en) 2017-02-01
JP6613243B2 (ja) 2019-11-27
US10415151B1 (en) 2019-09-17
US10801125B2 (en) 2020-10-13

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Granted publication date: 20200428