JP2019529312A5 - - Google Patents

Download PDF

Info

Publication number
JP2019529312A5
JP2019529312A5 JP2019514031A JP2019514031A JP2019529312A5 JP 2019529312 A5 JP2019529312 A5 JP 2019529312A5 JP 2019514031 A JP2019514031 A JP 2019514031A JP 2019514031 A JP2019514031 A JP 2019514031A JP 2019529312 A5 JP2019529312 A5 JP 2019529312A5
Authority
JP
Japan
Prior art keywords
flow path
gas flow
gas
crystallizer
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2019514031A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019529312A (ja
JP7037553B2 (ja
Filing date
Publication date
Priority claimed from US15/455,437 external-priority patent/US10179958B2/en
Application filed filed Critical
Publication of JP2019529312A publication Critical patent/JP2019529312A/ja
Publication of JP2019529312A5 publication Critical patent/JP2019529312A5/ja
Application granted granted Critical
Publication of JP7037553B2 publication Critical patent/JP7037553B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2019514031A 2016-09-16 2017-08-28 結晶性シートの形成装置及び形成方法 Expired - Fee Related JP7037553B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662395732P 2016-09-16 2016-09-16
US62/395,732 2016-09-16
US15/455,437 2017-03-10
US15/455,437 US10179958B2 (en) 2016-09-16 2017-03-10 Apparatus and method for crystalline sheet growth
PCT/US2017/048848 WO2018052693A1 (en) 2016-09-16 2017-08-28 Apparatus and method for crystalline sheet growth related applications

Publications (3)

Publication Number Publication Date
JP2019529312A JP2019529312A (ja) 2019-10-17
JP2019529312A5 true JP2019529312A5 (enExample) 2020-09-10
JP7037553B2 JP7037553B2 (ja) 2022-03-16

Family

ID=61618376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019514031A Expired - Fee Related JP7037553B2 (ja) 2016-09-16 2017-08-28 結晶性シートの形成装置及び形成方法

Country Status (7)

Country Link
US (1) US10179958B2 (enExample)
EP (1) EP3512989A4 (enExample)
JP (1) JP7037553B2 (enExample)
KR (1) KR102405193B1 (enExample)
CN (1) CN109923246B (enExample)
TW (1) TWI758311B (enExample)
WO (1) WO2018052693A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022533146A (ja) * 2019-05-13 2022-07-21 リーディング エッジ イクウィップメント テクノロジーズ インコーポレイテッド 炉内でのシリコンリボンのガス曝露

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2633961C2 (de) * 1975-07-28 1986-01-02 Mitsubishi Kinzoku K.K. Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes
JPS5261180A (en) 1975-11-14 1977-05-20 Toyo Shirikon Kk Horizontal growth of crystal ribbons
JPS5361577A (en) * 1976-11-15 1978-06-02 Agency Of Ind Science & Technol Growing method for horizontally pulled ribbon crystal
US4289571A (en) 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4417944A (en) * 1980-07-07 1983-11-29 Jewett David N Controlled heat sink for crystal ribbon growth
CN101522960B (zh) 2006-09-28 2012-07-25 Amg艾迪卡斯特太阳能公司 用于生产晶体硅基板的方法和设备
US7855087B2 (en) 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
US7816153B2 (en) 2008-06-05 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for producing a dislocation-free crystalline sheet
US9567691B2 (en) * 2008-06-20 2017-02-14 Varian Semiconductor Equipment Associates, Inc. Melt purification and delivery system
CN201244377Y (zh) * 2008-08-04 2009-05-27 宁波志华化学有限公司 一种分步结晶装置
US20100080905A1 (en) 2008-09-30 2010-04-01 Varian Semiconductor Equipment Associates, Inc. Solute stabilization of sheets formed from a melt
US8603242B2 (en) * 2009-02-26 2013-12-10 Uri Cohen Floating semiconductor foils
US8790460B2 (en) 2009-05-18 2014-07-29 Empire Technology Development Llc Formation of silicon sheets by impinging fluid
US8685162B2 (en) * 2010-05-06 2014-04-01 Varian Semiconductor Equipment Associates, Inc. Removing a sheet from the surface of a melt using gas jets
US20130213296A1 (en) 2012-02-17 2013-08-22 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a melt
US9970125B2 (en) 2012-02-17 2018-05-15 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
US9957636B2 (en) 2014-03-27 2018-05-01 Varian Semiconductor Equipment Associates, Inc. System and method for crystalline sheet growth using a cold block and gas jet

Similar Documents

Publication Publication Date Title
TWI690626B (zh) 結晶器與自一熔體成長為結晶片的方法
JP2011144106A (ja) 単結晶シリコンリボンの連続鋳造装置および連続鋳造方法
JP2012140267A (ja) ＳｉＣ単結晶の製造装置および製造方法
US20200115819A1 (en) Apparatus for forming crystalline sheet from a melt
JP2017509578A5 (enExample)
JP7037553B2 (ja) 結晶性シートの形成装置及び形成方法
JP2019529312A5 (enExample)
JP6286514B2 (ja) 多結晶シリコンインゴットの製造方法
US20090139445A1 (en) Device for Fabricating a Ribbon of Silicon or Other Crystalline Materials and Method of Fabrication
JP6613243B2 (ja) シリコン融液内の熱流を制御する装置
US7780782B2 (en) Method and apparatus for growing a ribbon crystal with localized cooling
JP2007131523A (ja) 平板ガラス、特にフロートガラスの製造方法
JPS5950636B2 (ja) 帯状シリコン結晶製造装置
JPS5943087B2 (ja) 液相結晶成長装置