JP2017509578A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2017509578A5 JP2017509578A5 JP2016558378A JP2016558378A JP2017509578A5 JP 2017509578 A5 JP2017509578 A5 JP 2017509578A5 JP 2016558378 A JP2016558378 A JP 2016558378A JP 2016558378 A JP2016558378 A JP 2016558378A JP 2017509578 A5 JP2017509578 A5 JP 2017509578A5
- Authority
- JP
- Japan
- Prior art keywords
- cooling block
- exposed surface
- gas
- crystallizer
- heat removal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001816 cooling Methods 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 30
- 239000000155 melt Substances 0.000 claims description 24
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 11
- 238000002425 crystallisation Methods 0.000 claims description 11
- 230000008025 crystallization Effects 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/226,991 | 2014-03-27 | ||
| US14/226,991 US9957636B2 (en) | 2014-03-27 | 2014-03-27 | System and method for crystalline sheet growth using a cold block and gas jet |
| PCT/US2015/020381 WO2015148156A1 (en) | 2014-03-27 | 2015-03-13 | System and method for crystalline sheet growth using a cold block and gas jet |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017509578A JP2017509578A (ja) | 2017-04-06 |
| JP2017509578A5 true JP2017509578A5 (enExample) | 2018-04-05 |
| JP6475751B2 JP6475751B2 (ja) | 2019-03-06 |
Family
ID=54196228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016558378A Expired - Fee Related JP6475751B2 (ja) | 2014-03-27 | 2015-03-13 | 冷却ブロック及びガス噴射を使用した結晶シート成長のためのシステム及び方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9957636B2 (enExample) |
| EP (1) | EP3123523B1 (enExample) |
| JP (1) | JP6475751B2 (enExample) |
| KR (1) | KR102348599B1 (enExample) |
| CN (2) | CN107815728B (enExample) |
| TW (1) | TWI690626B (enExample) |
| WO (1) | WO2015148156A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3049189B1 (en) * | 2013-09-25 | 2019-10-30 | United Technologies Corporation | Simplified cold spray nozzle and gun |
| FR3049343A1 (fr) | 2016-03-22 | 2017-09-29 | Dover Europe Sarl | Dispositif de mesure de debit et de viscosite et son utilisation dans une imprimante |
| US10179958B2 (en) * | 2016-09-16 | 2019-01-15 | Varian Semiconductor Equipment Associates, Inc | Apparatus and method for crystalline sheet growth |
| CN107217296B (zh) * | 2017-04-28 | 2019-05-07 | 常州大学 | 一种硅片水平生长设备和方法 |
| WO2020033419A1 (en) * | 2018-08-06 | 2020-02-13 | Carnegie Mellon University | Method for producing a sheet from a melt by imposing a periodic change in the rate of pull |
| AU2021224210A1 (en) * | 2020-02-19 | 2022-09-08 | Leading Edge Equipment Technologies, Inc. | Controlling the thickness and width of a crystalline sheet formed on the surface of a melt using combined surface cooling and melt heating |
| MX2022010077A (es) * | 2020-02-19 | 2022-09-29 | Leading Edge Equipment Tech Inc | Control activo de borde de una lamina cristalina formada en la superficie de una masa fundida. |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5261180A (en) * | 1975-11-14 | 1977-05-20 | Toyo Shirikon Kk | Horizontal growth of crystal ribbons |
| US4289571A (en) | 1979-06-25 | 1981-09-15 | Energy Materials Corporation | Method and apparatus for producing crystalline ribbons |
| US4417944A (en) | 1980-07-07 | 1983-11-29 | Jewett David N | Controlled heat sink for crystal ribbon growth |
| US4749438A (en) * | 1986-01-06 | 1988-06-07 | Bleil Carl E | Method and apparatus for zone recrystallization |
| JPS62291977A (ja) * | 1986-06-06 | 1987-12-18 | シ−メンス、アクチエンゲゼルシヤフト | 太陽電池用シリコン盤の切り出し方法と装置 |
| US4786479A (en) * | 1987-09-02 | 1988-11-22 | The United States Of America As Represented By The United States Department Of Energy | Apparatus for dendritic web growth systems |
| US5128111A (en) * | 1988-03-23 | 1992-07-07 | Manfred R. Kuehnle | Appartus for making inorganic webs and structures formed thereof |
| US6800137B2 (en) * | 1995-06-16 | 2004-10-05 | Phoenix Scientific Corporation | Binary and ternary crystal purification and growth method and apparatus |
| JP4111669B2 (ja) * | 1999-11-30 | 2008-07-02 | シャープ株式会社 | シート製造方法、シートおよび太陽電池 |
| US7294197B1 (en) | 2003-08-13 | 2007-11-13 | Nicholas Gralenski | Formation of a silicon sheet by cold surface casting |
| US7572334B2 (en) | 2006-01-03 | 2009-08-11 | Applied Materials, Inc. | Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application |
| US7638593B2 (en) * | 2006-05-24 | 2009-12-29 | Eastman Chemical Company | Crystallizer temperature control via fluid control |
| US20100086465A1 (en) | 2007-01-25 | 2010-04-08 | Gen Kojima | Apparatus and method for manufacturing silicon substrate, and silicon substrate |
| US7855087B2 (en) | 2008-03-14 | 2010-12-21 | Varian Semiconductor Equipment Associates, Inc. | Floating sheet production apparatus and method |
| US20090280336A1 (en) * | 2008-05-08 | 2009-11-12 | Ralf Jonczyk | Semiconductor sheets and methods of fabricating the same |
| US7816153B2 (en) | 2008-06-05 | 2010-10-19 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for producing a dislocation-free crystalline sheet |
| US9050652B2 (en) | 2008-11-14 | 2015-06-09 | Carnegie Mellon University | Methods for casting by a float process and associated apparatuses |
| US8790460B2 (en) | 2009-05-18 | 2014-07-29 | Empire Technology Development Llc | Formation of silicon sheets by impinging fluid |
| US8685162B2 (en) * | 2010-05-06 | 2014-04-01 | Varian Semiconductor Equipment Associates, Inc. | Removing a sheet from the surface of a melt using gas jets |
| US9057146B2 (en) * | 2010-08-24 | 2015-06-16 | Varian Semiconductor Equipment Associates, Inc. | Eddy current thickness measurement apparatus |
| CN102485953B (zh) * | 2010-12-01 | 2014-07-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 托盘装置及结晶膜生长设备 |
| US20130213296A1 (en) | 2012-02-17 | 2013-08-22 | Varian Semiconductor Equipment Associates, Inc. | Method for achieving sustained anisotropic crystal growth on the surface of a melt |
| US9970125B2 (en) * | 2012-02-17 | 2018-05-15 | Varian Semiconductor Equipment Associates, Inc. | Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt |
| JP2014047129A (ja) * | 2012-09-04 | 2014-03-17 | Canon Machinery Inc | 結晶育成装置 |
| CN204256639U (zh) * | 2014-11-05 | 2015-04-08 | 天津市招财猫信息技术有限公司 | 一种喷射冷头 |
-
2014
- 2014-03-27 US US14/226,991 patent/US9957636B2/en active Active
-
2015
- 2015-03-13 EP EP15770386.9A patent/EP3123523B1/en not_active Not-in-force
- 2015-03-13 KR KR1020167029432A patent/KR102348599B1/ko not_active Expired - Fee Related
- 2015-03-13 WO PCT/US2015/020381 patent/WO2015148156A1/en not_active Ceased
- 2015-03-13 CN CN201711069158.4A patent/CN107815728B/zh not_active Expired - Fee Related
- 2015-03-13 JP JP2016558378A patent/JP6475751B2/ja not_active Expired - Fee Related
- 2015-03-13 CN CN201580016307.3A patent/CN106165110B/zh not_active Expired - Fee Related
- 2015-03-25 TW TW104109463A patent/TWI690626B/zh not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2017509578A5 (enExample) | ||
| JP6475751B2 (ja) | 冷却ブロック及びガス噴射を使用した結晶シート成長のためのシステム及び方法 | |
| JP5719282B2 (ja) | 多結晶シリコンの製造方法 | |
| US9435053B2 (en) | Apparatus for manufacturing ingot | |
| JP5656623B2 (ja) | ＳｉＣ単結晶の製造装置および製造方法 | |
| TW201139761A (en) | Removing a sheet from the surface of a melt using gas jets | |
| KR20150107241A (ko) | 잉곳 제조 방법 및 잉곳 제조 장치 | |
| JP6613243B2 (ja) | シリコン融液内の熱流を制御する装置 | |
| JP7037553B2 (ja) | 結晶性シートの形成装置及び形成方法 | |
| US7780782B2 (en) | Method and apparatus for growing a ribbon crystal with localized cooling | |
| JP6553089B2 (ja) | 融液を処理する装置、融液内で熱流を制御するシステム及び融液を処理する方法 | |
| JP2019529312A5 (enExample) | ||
| US20120211917A1 (en) | Wafer Furnace with Variable Flow Gas Jets | |
| JPH05217903A (ja) | 気相成長装置及び気相成長法 | |
| JP2010052982A (ja) | シリコン単結晶引上げ装置 | |
| JP2006147949A (ja) | Ｉｉｉ−ｖ族化合物半導体製造方法 | |
| TW200951251A (en) | Single crystal pulling apparatus | |
| JPS582198B2 (ja) | 横引きリボン結晶成長法 |