TWI690626B - 結晶器與自一熔體成長為結晶片的方法 - Google Patents
結晶器與自一熔體成長為結晶片的方法 Download PDFInfo
- Publication number
- TWI690626B TWI690626B TW104109463A TW104109463A TWI690626B TW I690626 B TWI690626 B TW I690626B TW 104109463 A TW104109463 A TW 104109463A TW 104109463 A TW104109463 A TW 104109463A TW I690626 B TWI690626 B TW I690626B
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- Prior art keywords
- exposed surface
- gas
- heat dissipation
- melt
- crystallizer
- Prior art date
Links
- 239000000155 melt Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 title description 36
- 230000017525 heat dissipation Effects 0.000 claims description 123
- 238000001816 cooling Methods 0.000 claims description 100
- 238000002347 injection Methods 0.000 claims description 37
- 239000007924 injection Substances 0.000 claims description 37
- 238000012545 processing Methods 0.000 claims description 34
- 238000005057 refrigeration Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 3
- 239000003507 refrigerant Substances 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 147
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 16
- 239000001307 helium Substances 0.000 description 11
- 229910052734 helium Inorganic materials 0.000 description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- 238000004088 simulation Methods 0.000 description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 239000002131 composite material Substances 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 239000005350 fused silica glass Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CAPAZTWTGPAFQE-UHFFFAOYSA-N ethane-1,2-diol Chemical compound OCCO.OCCO CAPAZTWTGPAFQE-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/226,991 US9957636B2 (en) | 2014-03-27 | 2014-03-27 | System and method for crystalline sheet growth using a cold block and gas jet |
| US14/226,991 | 2014-03-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201542890A TW201542890A (zh) | 2015-11-16 |
| TWI690626B true TWI690626B (zh) | 2020-04-11 |
Family
ID=54196228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104109463A TWI690626B (zh) | 2014-03-27 | 2015-03-25 | 結晶器與自一熔體成長為結晶片的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9957636B2 (enExample) |
| EP (1) | EP3123523B1 (enExample) |
| JP (1) | JP6475751B2 (enExample) |
| KR (1) | KR102348599B1 (enExample) |
| CN (2) | CN107815728B (enExample) |
| TW (1) | TWI690626B (enExample) |
| WO (1) | WO2015148156A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3049189B1 (en) * | 2013-09-25 | 2019-10-30 | United Technologies Corporation | Simplified cold spray nozzle and gun |
| FR3049343A1 (fr) | 2016-03-22 | 2017-09-29 | Dover Europe Sarl | Dispositif de mesure de debit et de viscosite et son utilisation dans une imprimante |
| US10179958B2 (en) | 2016-09-16 | 2019-01-15 | Varian Semiconductor Equipment Associates, Inc | Apparatus and method for crystalline sheet growth |
| CN107217296B (zh) * | 2017-04-28 | 2019-05-07 | 常州大学 | 一种硅片水平生长设备和方法 |
| WO2020033419A1 (en) * | 2018-08-06 | 2020-02-13 | Carnegie Mellon University | Method for producing a sheet from a melt by imposing a periodic change in the rate of pull |
| MX2022010077A (es) * | 2020-02-19 | 2022-09-29 | Leading Edge Equipment Tech Inc | Control activo de borde de una lamina cristalina formada en la superficie de una masa fundida. |
| CN115210414A (zh) * | 2020-02-19 | 2022-10-18 | 尖端设备技术公司 | 使用组合的表面冷却和熔体加热控制在熔体表面上形成的结晶板片的厚度和宽度 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4417944A (en) * | 1980-07-07 | 1983-11-29 | Jewett David N | Controlled heat sink for crystal ribbon growth |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5261180A (en) | 1975-11-14 | 1977-05-20 | Toyo Shirikon Kk | Horizontal growth of crystal ribbons |
| US4289571A (en) | 1979-06-25 | 1981-09-15 | Energy Materials Corporation | Method and apparatus for producing crystalline ribbons |
| US4749438A (en) * | 1986-01-06 | 1988-06-07 | Bleil Carl E | Method and apparatus for zone recrystallization |
| JPS62291977A (ja) * | 1986-06-06 | 1987-12-18 | シ−メンス、アクチエンゲゼルシヤフト | 太陽電池用シリコン盤の切り出し方法と装置 |
| US4786479A (en) * | 1987-09-02 | 1988-11-22 | The United States Of America As Represented By The United States Department Of Energy | Apparatus for dendritic web growth systems |
| US5128111A (en) * | 1988-03-23 | 1992-07-07 | Manfred R. Kuehnle | Appartus for making inorganic webs and structures formed thereof |
| US6800137B2 (en) * | 1995-06-16 | 2004-10-05 | Phoenix Scientific Corporation | Binary and ternary crystal purification and growth method and apparatus |
| JP4111669B2 (ja) | 1999-11-30 | 2008-07-02 | シャープ株式会社 | シート製造方法、シートおよび太陽電池 |
| US7294197B1 (en) | 2003-08-13 | 2007-11-13 | Nicholas Gralenski | Formation of a silicon sheet by cold surface casting |
| US7572334B2 (en) | 2006-01-03 | 2009-08-11 | Applied Materials, Inc. | Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application |
| US7638593B2 (en) * | 2006-05-24 | 2009-12-29 | Eastman Chemical Company | Crystallizer temperature control via fluid control |
| JP5062767B2 (ja) | 2007-01-25 | 2012-10-31 | 独立行政法人産業技術総合研究所 | シリコン基板の製造装置及び製造方法 |
| US7855087B2 (en) | 2008-03-14 | 2010-12-21 | Varian Semiconductor Equipment Associates, Inc. | Floating sheet production apparatus and method |
| US20090280336A1 (en) * | 2008-05-08 | 2009-11-12 | Ralf Jonczyk | Semiconductor sheets and methods of fabricating the same |
| US7816153B2 (en) | 2008-06-05 | 2010-10-19 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for producing a dislocation-free crystalline sheet |
| US9050652B2 (en) | 2008-11-14 | 2015-06-09 | Carnegie Mellon University | Methods for casting by a float process and associated apparatuses |
| US8790460B2 (en) * | 2009-05-18 | 2014-07-29 | Empire Technology Development Llc | Formation of silicon sheets by impinging fluid |
| US8685162B2 (en) * | 2010-05-06 | 2014-04-01 | Varian Semiconductor Equipment Associates, Inc. | Removing a sheet from the surface of a melt using gas jets |
| US9057146B2 (en) * | 2010-08-24 | 2015-06-16 | Varian Semiconductor Equipment Associates, Inc. | Eddy current thickness measurement apparatus |
| CN102485953B (zh) * | 2010-12-01 | 2014-07-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 托盘装置及结晶膜生长设备 |
| US20130213296A1 (en) | 2012-02-17 | 2013-08-22 | Varian Semiconductor Equipment Associates, Inc. | Method for achieving sustained anisotropic crystal growth on the surface of a melt |
| US9970125B2 (en) * | 2012-02-17 | 2018-05-15 | Varian Semiconductor Equipment Associates, Inc. | Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt |
| JP2014047129A (ja) * | 2012-09-04 | 2014-03-17 | Canon Machinery Inc | 結晶育成装置 |
| CN204256639U (zh) * | 2014-11-05 | 2015-04-08 | 天津市招财猫信息技术有限公司 | 一种喷射冷头 |
-
2014
- 2014-03-27 US US14/226,991 patent/US9957636B2/en active Active
-
2015
- 2015-03-13 WO PCT/US2015/020381 patent/WO2015148156A1/en not_active Ceased
- 2015-03-13 JP JP2016558378A patent/JP6475751B2/ja not_active Expired - Fee Related
- 2015-03-13 CN CN201711069158.4A patent/CN107815728B/zh not_active Expired - Fee Related
- 2015-03-13 CN CN201580016307.3A patent/CN106165110B/zh not_active Expired - Fee Related
- 2015-03-13 EP EP15770386.9A patent/EP3123523B1/en not_active Not-in-force
- 2015-03-13 KR KR1020167029432A patent/KR102348599B1/ko not_active Expired - Fee Related
- 2015-03-25 TW TW104109463A patent/TWI690626B/zh not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4417944A (en) * | 1980-07-07 | 1983-11-29 | Jewett David N | Controlled heat sink for crystal ribbon growth |
Non-Patent Citations (1)
| Title |
|---|
| B. Kudo, 1980. Improvements in the Horizontal Ribbon Growth technique for single crystal silicon, Journal of Crystal Growth, Vol. 50, page: 247-259. * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017509578A (ja) | 2017-04-06 |
| CN106165110B (zh) | 2017-12-08 |
| TW201542890A (zh) | 2015-11-16 |
| JP6475751B2 (ja) | 2019-03-06 |
| KR20160138182A (ko) | 2016-12-02 |
| EP3123523A1 (en) | 2017-02-01 |
| US20180047864A1 (en) | 2018-02-15 |
| CN107815728A (zh) | 2018-03-20 |
| CN107815728B (zh) | 2021-02-09 |
| KR102348599B1 (ko) | 2022-01-07 |
| EP3123523A4 (en) | 2017-11-01 |
| CN106165110A (zh) | 2016-11-23 |
| EP3123523B1 (en) | 2018-10-31 |
| US9957636B2 (en) | 2018-05-01 |
| WO2015148156A1 (en) | 2015-10-01 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |