KR102348599B1 - 냉각 블록 및 가스 제트를 사용하는 결정질 시트 성장을 위한 시스템 및 방법 - Google Patents

냉각 블록 및 가스 제트를 사용하는 결정질 시트 성장을 위한 시스템 및 방법 Download PDF

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KR102348599B1
KR102348599B1 KR1020167029432A KR20167029432A KR102348599B1 KR 102348599 B1 KR102348599 B1 KR 102348599B1 KR 1020167029432 A KR1020167029432 A KR 1020167029432A KR 20167029432 A KR20167029432 A KR 20167029432A KR 102348599 B1 KR102348599 B1 KR 102348599B1
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South Korea
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cooling block
gas
exposed surface
melt
heat removal
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KR20160138182A (ko
Inventor
피터 엘. 켈러만
브레인 매킨토시
프레드릭 엠. 칼슨
데이비드 모렐
알라 모라디안
난디쉬 데사이
다웨이 순
프랭크 싱클레어
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베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H01L31/1804—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
KR1020167029432A 2014-03-27 2015-03-13 냉각 블록 및 가스 제트를 사용하는 결정질 시트 성장을 위한 시스템 및 방법 Expired - Fee Related KR102348599B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/226,991 US9957636B2 (en) 2014-03-27 2014-03-27 System and method for crystalline sheet growth using a cold block and gas jet
US14/226,991 2014-03-27
PCT/US2015/020381 WO2015148156A1 (en) 2014-03-27 2015-03-13 System and method for crystalline sheet growth using a cold block and gas jet

Publications (2)

Publication Number Publication Date
KR20160138182A KR20160138182A (ko) 2016-12-02
KR102348599B1 true KR102348599B1 (ko) 2022-01-07

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KR1020167029432A Expired - Fee Related KR102348599B1 (ko) 2014-03-27 2015-03-13 냉각 블록 및 가스 제트를 사용하는 결정질 시트 성장을 위한 시스템 및 방법

Country Status (7)

Country Link
US (1) US9957636B2 (enExample)
EP (1) EP3123523B1 (enExample)
JP (1) JP6475751B2 (enExample)
KR (1) KR102348599B1 (enExample)
CN (2) CN107815728B (enExample)
TW (1) TWI690626B (enExample)
WO (1) WO2015148156A1 (enExample)

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EP3049189B1 (en) * 2013-09-25 2019-10-30 United Technologies Corporation Simplified cold spray nozzle and gun
FR3049343A1 (fr) 2016-03-22 2017-09-29 Dover Europe Sarl Dispositif de mesure de debit et de viscosite et son utilisation dans une imprimante
US10179958B2 (en) 2016-09-16 2019-01-15 Varian Semiconductor Equipment Associates, Inc Apparatus and method for crystalline sheet growth
CN107217296B (zh) * 2017-04-28 2019-05-07 常州大学 一种硅片水平生长设备和方法
WO2020033419A1 (en) * 2018-08-06 2020-02-13 Carnegie Mellon University Method for producing a sheet from a melt by imposing a periodic change in the rate of pull
MX2022010077A (es) * 2020-02-19 2022-09-29 Leading Edge Equipment Tech Inc Control activo de borde de una lamina cristalina formada en la superficie de una masa fundida.
CN115210414A (zh) * 2020-02-19 2022-10-18 尖端设备技术公司 使用组合的表面冷却和熔体加热控制在熔体表面上形成的结晶板片的厚度和宽度

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JPS5261180A (en) 1975-11-14 1977-05-20 Toyo Shirikon Kk Horizontal growth of crystal ribbons
US4289571A (en) 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4417944A (en) 1980-07-07 1983-11-29 Jewett David N Controlled heat sink for crystal ribbon growth
US4749438A (en) * 1986-01-06 1988-06-07 Bleil Carl E Method and apparatus for zone recrystallization
JPS62291977A (ja) * 1986-06-06 1987-12-18 シ−メンス、アクチエンゲゼルシヤフト 太陽電池用シリコン盤の切り出し方法と装置
US4786479A (en) * 1987-09-02 1988-11-22 The United States Of America As Represented By The United States Department Of Energy Apparatus for dendritic web growth systems
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US6800137B2 (en) * 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
JP4111669B2 (ja) 1999-11-30 2008-07-02 シャープ株式会社 シート製造方法、シートおよび太陽電池
US7294197B1 (en) 2003-08-13 2007-11-13 Nicholas Gralenski Formation of a silicon sheet by cold surface casting
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US7638593B2 (en) * 2006-05-24 2009-12-29 Eastman Chemical Company Crystallizer temperature control via fluid control
JP5062767B2 (ja) 2007-01-25 2012-10-31 独立行政法人産業技術総合研究所 シリコン基板の製造装置及び製造方法
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Also Published As

Publication number Publication date
JP2017509578A (ja) 2017-04-06
CN106165110B (zh) 2017-12-08
TW201542890A (zh) 2015-11-16
JP6475751B2 (ja) 2019-03-06
KR20160138182A (ko) 2016-12-02
EP3123523A1 (en) 2017-02-01
US20180047864A1 (en) 2018-02-15
CN107815728A (zh) 2018-03-20
CN107815728B (zh) 2021-02-09
TWI690626B (zh) 2020-04-11
EP3123523A4 (en) 2017-11-01
CN106165110A (zh) 2016-11-23
EP3123523B1 (en) 2018-10-31
US9957636B2 (en) 2018-05-01
WO2015148156A1 (en) 2015-10-01

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