CN107815728B - 使熔体成长为结晶片的结晶器系统及方法 - Google Patents

使熔体成长为结晶片的结晶器系统及方法 Download PDF

Info

Publication number
CN107815728B
CN107815728B CN201711069158.4A CN201711069158A CN107815728B CN 107815728 B CN107815728 B CN 107815728B CN 201711069158 A CN201711069158 A CN 201711069158A CN 107815728 B CN107815728 B CN 107815728B
Authority
CN
China
Prior art keywords
gas
melt
heat dissipation
nozzle
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201711069158.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN107815728A (zh
Inventor
彼德·L·凯勒曼
布莱恩·梅克英特许
菲德梨克·M·卡尔森
大卫·莫雷尔
阿拉·莫瑞迪亚
南帝斯·德塞
孙大为
法兰克·辛克莱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN107815728A publication Critical patent/CN107815728A/zh
Application granted granted Critical
Publication of CN107815728B publication Critical patent/CN107815728B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CN201711069158.4A 2014-03-27 2015-03-13 使熔体成长为结晶片的结晶器系统及方法 Expired - Fee Related CN107815728B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/226,991 US9957636B2 (en) 2014-03-27 2014-03-27 System and method for crystalline sheet growth using a cold block and gas jet
US14/226,991 2014-03-27
CN201580016307.3A CN106165110B (zh) 2014-03-27 2015-03-13 使熔体成长为结晶片的结晶器及方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201580016307.3A Division CN106165110B (zh) 2014-03-27 2015-03-13 使熔体成长为结晶片的结晶器及方法

Publications (2)

Publication Number Publication Date
CN107815728A CN107815728A (zh) 2018-03-20
CN107815728B true CN107815728B (zh) 2021-02-09

Family

ID=54196228

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201711069158.4A Expired - Fee Related CN107815728B (zh) 2014-03-27 2015-03-13 使熔体成长为结晶片的结晶器系统及方法
CN201580016307.3A Expired - Fee Related CN106165110B (zh) 2014-03-27 2015-03-13 使熔体成长为结晶片的结晶器及方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201580016307.3A Expired - Fee Related CN106165110B (zh) 2014-03-27 2015-03-13 使熔体成长为结晶片的结晶器及方法

Country Status (7)

Country Link
US (1) US9957636B2 (enExample)
EP (1) EP3123523B1 (enExample)
JP (1) JP6475751B2 (enExample)
KR (1) KR102348599B1 (enExample)
CN (2) CN107815728B (enExample)
TW (1) TWI690626B (enExample)
WO (1) WO2015148156A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3049189B1 (en) * 2013-09-25 2019-10-30 United Technologies Corporation Simplified cold spray nozzle and gun
FR3049343A1 (fr) 2016-03-22 2017-09-29 Dover Europe Sarl Dispositif de mesure de debit et de viscosite et son utilisation dans une imprimante
US10179958B2 (en) 2016-09-16 2019-01-15 Varian Semiconductor Equipment Associates, Inc Apparatus and method for crystalline sheet growth
CN107217296B (zh) * 2017-04-28 2019-05-07 常州大学 一种硅片水平生长设备和方法
WO2020033419A1 (en) * 2018-08-06 2020-02-13 Carnegie Mellon University Method for producing a sheet from a melt by imposing a periodic change in the rate of pull
MX2022010077A (es) * 2020-02-19 2022-09-29 Leading Edge Equipment Tech Inc Control activo de borde de una lamina cristalina formada en la superficie de una masa fundida.
CN115210414A (zh) * 2020-02-19 2022-10-18 尖端设备技术公司 使用组合的表面冷却和熔体加热控制在熔体表面上形成的结晶板片的厚度和宽度

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4417944A (en) * 1980-07-07 1983-11-29 Jewett David N Controlled heat sink for crystal ribbon growth
JPS6479091A (en) * 1987-09-02 1989-03-24 Westinghouse Electric Corp Dendritic web crystal growth equipment
US4871517A (en) * 1986-06-06 1989-10-03 Siemens Aktiengesellschaft Apparatus for parting wafer-shaped silicon bodies, useful for solar cells, from a silicon tape manufactured in a horizontal tape-drawing method
US5128111A (en) * 1988-03-23 1992-07-07 Manfred R. Kuehnle Appartus for making inorganic webs and structures formed thereof
US6521827B2 (en) * 1999-11-30 2003-02-18 Sharp Kabushiki Kaisha Sheet manufacturing method, sheet, sheet manufacturing apparatus, and solar cell
US7294197B1 (en) * 2003-08-13 2007-11-13 Nicholas Gralenski Formation of a silicon sheet by cold surface casting
CN101454131A (zh) * 2006-05-24 2009-06-10 伊士曼化工公司 采用流体控制的结晶器温度控制方法
JP2010265163A (ja) * 2009-05-18 2010-11-25 Emprie Technology Development LLC 衝突流体によるシリコンシートの形成
CN102485953A (zh) * 2010-12-01 2012-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 托盘装置及结晶膜生长设备
CN103025926A (zh) * 2010-05-06 2013-04-03 瓦里安半导体设备公司 使用气体喷嘴从熔化物表面移离板材
CN103080388A (zh) * 2010-08-24 2013-05-01 瓦里安半导体设备公司 涡电流厚度测量装置
CN204256639U (zh) * 2014-11-05 2015-04-08 天津市招财猫信息技术有限公司 一种喷射冷头

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5261180A (en) 1975-11-14 1977-05-20 Toyo Shirikon Kk Horizontal growth of crystal ribbons
US4289571A (en) 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4749438A (en) * 1986-01-06 1988-06-07 Bleil Carl E Method and apparatus for zone recrystallization
US6800137B2 (en) * 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US7572334B2 (en) 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
JP5062767B2 (ja) 2007-01-25 2012-10-31 独立行政法人産業技術総合研究所 シリコン基板の製造装置及び製造方法
US7855087B2 (en) 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
US20090280336A1 (en) * 2008-05-08 2009-11-12 Ralf Jonczyk Semiconductor sheets and methods of fabricating the same
US7816153B2 (en) 2008-06-05 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for producing a dislocation-free crystalline sheet
US9050652B2 (en) 2008-11-14 2015-06-09 Carnegie Mellon University Methods for casting by a float process and associated apparatuses
US20130213296A1 (en) 2012-02-17 2013-08-22 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a melt
US9970125B2 (en) * 2012-02-17 2018-05-15 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
JP2014047129A (ja) * 2012-09-04 2014-03-17 Canon Machinery Inc 結晶育成装置

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4417944A (en) * 1980-07-07 1983-11-29 Jewett David N Controlled heat sink for crystal ribbon growth
US4871517A (en) * 1986-06-06 1989-10-03 Siemens Aktiengesellschaft Apparatus for parting wafer-shaped silicon bodies, useful for solar cells, from a silicon tape manufactured in a horizontal tape-drawing method
JPS6479091A (en) * 1987-09-02 1989-03-24 Westinghouse Electric Corp Dendritic web crystal growth equipment
US5128111A (en) * 1988-03-23 1992-07-07 Manfred R. Kuehnle Appartus for making inorganic webs and structures formed thereof
US6521827B2 (en) * 1999-11-30 2003-02-18 Sharp Kabushiki Kaisha Sheet manufacturing method, sheet, sheet manufacturing apparatus, and solar cell
US7294197B1 (en) * 2003-08-13 2007-11-13 Nicholas Gralenski Formation of a silicon sheet by cold surface casting
CN101454131A (zh) * 2006-05-24 2009-06-10 伊士曼化工公司 采用流体控制的结晶器温度控制方法
JP2010265163A (ja) * 2009-05-18 2010-11-25 Emprie Technology Development LLC 衝突流体によるシリコンシートの形成
CN103025926A (zh) * 2010-05-06 2013-04-03 瓦里安半导体设备公司 使用气体喷嘴从熔化物表面移离板材
CN103080388A (zh) * 2010-08-24 2013-05-01 瓦里安半导体设备公司 涡电流厚度测量装置
CN102485953A (zh) * 2010-12-01 2012-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 托盘装置及结晶膜生长设备
CN204256639U (zh) * 2014-11-05 2015-04-08 天津市招财猫信息技术有限公司 一种喷射冷头

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"IMPROVEMENTS IN THE HORIZONTALRIBBON GROWTH TECHNIQUE FOR SINGLE CRYSTAL SILICON";B.KUDO;《Journal of Crystal Growth》;19801231;第50卷;247-259 *

Also Published As

Publication number Publication date
JP2017509578A (ja) 2017-04-06
CN106165110B (zh) 2017-12-08
TW201542890A (zh) 2015-11-16
JP6475751B2 (ja) 2019-03-06
KR20160138182A (ko) 2016-12-02
EP3123523A1 (en) 2017-02-01
US20180047864A1 (en) 2018-02-15
CN107815728A (zh) 2018-03-20
TWI690626B (zh) 2020-04-11
KR102348599B1 (ko) 2022-01-07
EP3123523A4 (en) 2017-11-01
CN106165110A (zh) 2016-11-23
EP3123523B1 (en) 2018-10-31
US9957636B2 (en) 2018-05-01
WO2015148156A1 (en) 2015-10-01

Similar Documents

Publication Publication Date Title
CN107815728B (zh) 使熔体成长为结晶片的结晶器系统及方法
JP5656623B2 (ja) ＳｉＣ単結晶の製造装置および製造方法
US20200040481A1 (en) Silicon wafer horizontal growth apparatus and method
JP2017509578A5 (enExample)
CN106133208B (zh) 用于控制熔体内的热流的装置及其处理方法
CN109923246B (zh) 形成结晶片的设备及方法
TWI675134B (zh) 用於處理熔體的設備、用於控制熔體內的熱流的系統及處理熔體的方法
US7780782B2 (en) Method and apparatus for growing a ribbon crystal with localized cooling
JP2019529312A5 (enExample)
KR101111408B1 (ko) 불활성 가스 블로윙을 이용한 실리콘 박판 제조 장치

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20210209