TWI758311B - 形成結晶片的設備以及方法 - Google Patents
形成結晶片的設備以及方法 Download PDFInfo
- Publication number
- TWI758311B TWI758311B TW106128060A TW106128060A TWI758311B TW I758311 B TWI758311 B TW I758311B TW 106128060 A TW106128060 A TW 106128060A TW 106128060 A TW106128060 A TW 106128060A TW I758311 B TWI758311 B TW I758311B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- crystallizer
- melt
- channel
- block
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 331
- 229910052734 helium Inorganic materials 0.000 claims abstract description 44
- 239000001307 helium Substances 0.000 claims abstract description 43
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 43
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 43
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000001257 hydrogen Substances 0.000 claims abstract description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 23
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 4
- 239000000155 melt Substances 0.000 claims description 83
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 66
- 229910052786 argon Inorganic materials 0.000 claims description 34
- 239000013078 crystal Substances 0.000 claims description 28
- 239000011261 inert gas Substances 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 6
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052724 xenon Inorganic materials 0.000 claims description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 54
- 238000001816 cooling Methods 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000012212 insulator Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000000112 cooling gas Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000003517 fume Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/001—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662395732P | 2016-09-16 | 2016-09-16 | |
| US62/395,732 | 2016-09-16 | ||
| US15/455,437 US10179958B2 (en) | 2016-09-16 | 2017-03-10 | Apparatus and method for crystalline sheet growth |
| US15/455,437 | 2017-03-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201829855A TW201829855A (zh) | 2018-08-16 |
| TWI758311B true TWI758311B (zh) | 2022-03-21 |
Family
ID=61618376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106128060A TWI758311B (zh) | 2016-09-16 | 2017-08-18 | 形成結晶片的設備以及方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10179958B2 (enExample) |
| EP (1) | EP3512989A4 (enExample) |
| JP (1) | JP7037553B2 (enExample) |
| KR (1) | KR102405193B1 (enExample) |
| CN (1) | CN109923246B (enExample) |
| TW (1) | TWI758311B (enExample) |
| WO (1) | WO2018052693A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3969641A4 (en) * | 2019-05-13 | 2023-01-25 | Leading Edge Equipment Technologies, Inc. | EXPOSURE OF A SILICON RIBBON TO A GAS IN AN OVEN |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4417944A (en) * | 1980-07-07 | 1983-11-29 | Jewett David N | Controlled heat sink for crystal ribbon growth |
| TW201139761A (en) * | 2010-05-06 | 2011-11-16 | Varian Semiconductor Equipment | Removing a sheet from the surface of a melt using gas jets |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2633961C2 (de) * | 1975-07-28 | 1986-01-02 | Mitsubishi Kinzoku K.K. | Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes |
| JPS5261180A (en) | 1975-11-14 | 1977-05-20 | Toyo Shirikon Kk | Horizontal growth of crystal ribbons |
| JPS5361577A (en) * | 1976-11-15 | 1978-06-02 | Agency Of Ind Science & Technol | Growing method for horizontally pulled ribbon crystal |
| US4289571A (en) | 1979-06-25 | 1981-09-15 | Energy Materials Corporation | Method and apparatus for producing crystalline ribbons |
| EP2094884A1 (en) | 2006-09-28 | 2009-09-02 | BP Corporation North America Inc. | Method and apparatus for the production of crystalline silicon substrates |
| US7855087B2 (en) | 2008-03-14 | 2010-12-21 | Varian Semiconductor Equipment Associates, Inc. | Floating sheet production apparatus and method |
| US7816153B2 (en) | 2008-06-05 | 2010-10-19 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for producing a dislocation-free crystalline sheet |
| US9567691B2 (en) * | 2008-06-20 | 2017-02-14 | Varian Semiconductor Equipment Associates, Inc. | Melt purification and delivery system |
| CN201244377Y (zh) * | 2008-08-04 | 2009-05-27 | 宁波志华化学有限公司 | 一种分步结晶装置 |
| US20100080905A1 (en) * | 2008-09-30 | 2010-04-01 | Varian Semiconductor Equipment Associates, Inc. | Solute stabilization of sheets formed from a melt |
| US8603242B2 (en) * | 2009-02-26 | 2013-12-10 | Uri Cohen | Floating semiconductor foils |
| US8790460B2 (en) | 2009-05-18 | 2014-07-29 | Empire Technology Development Llc | Formation of silicon sheets by impinging fluid |
| US9970125B2 (en) | 2012-02-17 | 2018-05-15 | Varian Semiconductor Equipment Associates, Inc. | Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt |
| US20130213296A1 (en) | 2012-02-17 | 2013-08-22 | Varian Semiconductor Equipment Associates, Inc. | Method for achieving sustained anisotropic crystal growth on the surface of a melt |
| US9957636B2 (en) | 2014-03-27 | 2018-05-01 | Varian Semiconductor Equipment Associates, Inc. | System and method for crystalline sheet growth using a cold block and gas jet |
-
2017
- 2017-03-10 US US15/455,437 patent/US10179958B2/en active Active
- 2017-08-18 TW TW106128060A patent/TWI758311B/zh not_active IP Right Cessation
- 2017-08-28 KR KR1020197010472A patent/KR102405193B1/ko active Active
- 2017-08-28 WO PCT/US2017/048848 patent/WO2018052693A1/en not_active Ceased
- 2017-08-28 CN CN201780068754.2A patent/CN109923246B/zh not_active Expired - Fee Related
- 2017-08-28 EP EP17851298.4A patent/EP3512989A4/en not_active Withdrawn
- 2017-08-28 JP JP2019514031A patent/JP7037553B2/ja not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4417944A (en) * | 1980-07-07 | 1983-11-29 | Jewett David N | Controlled heat sink for crystal ribbon growth |
| TW201139761A (en) * | 2010-05-06 | 2011-11-16 | Varian Semiconductor Equipment | Removing a sheet from the surface of a melt using gas jets |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109923246B (zh) | 2022-02-18 |
| KR20190043174A (ko) | 2019-04-25 |
| KR102405193B1 (ko) | 2022-06-07 |
| JP7037553B2 (ja) | 2022-03-16 |
| EP3512989A1 (en) | 2019-07-24 |
| EP3512989A4 (en) | 2020-05-13 |
| JP2019529312A (ja) | 2019-10-17 |
| TW201829855A (zh) | 2018-08-16 |
| WO2018052693A1 (en) | 2018-03-22 |
| US10179958B2 (en) | 2019-01-15 |
| US20180080142A1 (en) | 2018-03-22 |
| CN109923246A (zh) | 2019-06-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |