CN109923246B - 形成结晶片的设备及方法 - Google Patents

形成结晶片的设备及方法 Download PDF

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Publication number
CN109923246B
CN109923246B CN201780068754.2A CN201780068754A CN109923246B CN 109923246 B CN109923246 B CN 109923246B CN 201780068754 A CN201780068754 A CN 201780068754A CN 109923246 B CN109923246 B CN 109923246B
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CN
China
Prior art keywords
gas
crystallizer
melt
channel
helium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201780068754.2A
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English (en)
Chinese (zh)
Other versions
CN109923246A (zh
Inventor
彼德·L·凯勒曼
布莱恩·D·柯南
菲德梨克·M·卡尔森
孙大伟
大卫·莫雷尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Publication date
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Publication of CN109923246A publication Critical patent/CN109923246A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CN201780068754.2A 2016-09-16 2017-08-28 形成结晶片的设备及方法 Expired - Fee Related CN109923246B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662395732P 2016-09-16 2016-09-16
US62/395,732 2016-09-16
US15/455,437 US10179958B2 (en) 2016-09-16 2017-03-10 Apparatus and method for crystalline sheet growth
US15/455,437 2017-03-10
PCT/US2017/048848 WO2018052693A1 (en) 2016-09-16 2017-08-28 Apparatus and method for crystalline sheet growth related applications

Publications (2)

Publication Number Publication Date
CN109923246A CN109923246A (zh) 2019-06-21
CN109923246B true CN109923246B (zh) 2022-02-18

Family

ID=61618376

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780068754.2A Expired - Fee Related CN109923246B (zh) 2016-09-16 2017-08-28 形成结晶片的设备及方法

Country Status (7)

Country Link
US (1) US10179958B2 (enExample)
EP (1) EP3512989A4 (enExample)
JP (1) JP7037553B2 (enExample)
KR (1) KR102405193B1 (enExample)
CN (1) CN109923246B (enExample)
TW (1) TWI758311B (enExample)
WO (1) WO2018052693A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3969641A4 (en) * 2019-05-13 2023-01-25 Leading Edge Equipment Technologies, Inc. EXPOSURE OF A SILICON RIBBON TO A GAS IN AN OVEN

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5361577A (en) * 1976-11-15 1978-06-02 Agency Of Ind Science & Technol Growing method for horizontally pulled ribbon crystal
CN201244377Y (zh) * 2008-08-04 2009-05-27 宁波志华化学有限公司 一种分步结晶装置
WO2015148156A1 (en) * 2014-03-27 2015-10-01 Varian Semiconductor Equipment Associates, Inc. System and method for crystalline sheet growth using a cold block and gas jet

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2633961C2 (de) * 1975-07-28 1986-01-02 Mitsubishi Kinzoku K.K. Verfahren zum Ziehen eines dünnen Halbleiter-Einkristallbandes
JPS5261180A (en) 1975-11-14 1977-05-20 Toyo Shirikon Kk Horizontal growth of crystal ribbons
US4289571A (en) 1979-06-25 1981-09-15 Energy Materials Corporation Method and apparatus for producing crystalline ribbons
US4417944A (en) * 1980-07-07 1983-11-29 Jewett David N Controlled heat sink for crystal ribbon growth
EP2094884A1 (en) 2006-09-28 2009-09-02 BP Corporation North America Inc. Method and apparatus for the production of crystalline silicon substrates
US7855087B2 (en) 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
US7816153B2 (en) 2008-06-05 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for producing a dislocation-free crystalline sheet
US9567691B2 (en) * 2008-06-20 2017-02-14 Varian Semiconductor Equipment Associates, Inc. Melt purification and delivery system
US20100080905A1 (en) * 2008-09-30 2010-04-01 Varian Semiconductor Equipment Associates, Inc. Solute stabilization of sheets formed from a melt
US8603242B2 (en) * 2009-02-26 2013-12-10 Uri Cohen Floating semiconductor foils
US8790460B2 (en) 2009-05-18 2014-07-29 Empire Technology Development Llc Formation of silicon sheets by impinging fluid
US8685162B2 (en) * 2010-05-06 2014-04-01 Varian Semiconductor Equipment Associates, Inc. Removing a sheet from the surface of a melt using gas jets
US9970125B2 (en) 2012-02-17 2018-05-15 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
US20130213296A1 (en) 2012-02-17 2013-08-22 Varian Semiconductor Equipment Associates, Inc. Method for achieving sustained anisotropic crystal growth on the surface of a melt

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5361577A (en) * 1976-11-15 1978-06-02 Agency Of Ind Science & Technol Growing method for horizontally pulled ribbon crystal
CN201244377Y (zh) * 2008-08-04 2009-05-27 宁波志华化学有限公司 一种分步结晶装置
WO2015148156A1 (en) * 2014-03-27 2015-10-01 Varian Semiconductor Equipment Associates, Inc. System and method for crystalline sheet growth using a cold block and gas jet

Also Published As

Publication number Publication date
KR20190043174A (ko) 2019-04-25
KR102405193B1 (ko) 2022-06-07
JP7037553B2 (ja) 2022-03-16
EP3512989A1 (en) 2019-07-24
EP3512989A4 (en) 2020-05-13
JP2019529312A (ja) 2019-10-17
TW201829855A (zh) 2018-08-16
WO2018052693A1 (en) 2018-03-22
US10179958B2 (en) 2019-01-15
US20180080142A1 (en) 2018-03-22
CN109923246A (zh) 2019-06-21
TWI758311B (zh) 2022-03-21

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