TWI671802B - 縱型晶舟 - Google Patents
縱型晶舟 Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract
一種縱型晶舟,係藉由設置成多層的擱板部來支撐處理對象的矽晶圓,即便是大口徑的矽晶圓,仍可以一邊抑制矽晶圓的撓曲,一邊對晶圓外周部的彎曲減低與擱板部之接觸的風險。縱型晶舟1係具備:複數根支柱2,形成有用以搭載矽晶圓的擱板部2b;以及頂板及底板,固定前述支柱的上下端部;前述擱板部2b係朝向舟中心側而傾斜於下方,並且在該擱板部的前端部形成有朝向上方突起並與前述矽晶圓之邊緣部抵接的晶圓支撐部2b1。
Description
本發明係關於一種縱型晶舟,例如是關於一種在半導體裝置之製程中所使用的縱型低壓CVD(Chemical Vapor Deposition;化學氣相沉積)裝置中用以保持矽晶圓(silicon wafer)的縱型晶舟。
於作為處理對象的矽晶圓之表面成膜的情況下,使用進行藉由化學氣相沉積所為之成膜的CVD裝置。於圖3顯示習知的縱型低壓CVD裝置30。該CVD裝置30係具備:爐本體31;製程管(process tube)32,收容於爐本體31內,可收容複數個矽晶圓W;以及加熱器(未圖示),配置於爐本體31與製程管32之間。製程管32係藉由高純度石英或碳化矽(SiC)所形成,能藉由其內部被加熱而維持高溫的狀態。又,製程管32係連接於真空泵(未圖示),能夠將製程管32的內部減壓至預定氣壓(例如1.3kPa)以下。
在藉由前述製程管32所覆蓋的基座(base)33之中央部係設置有舟承座(boat receiver)34,在該舟承座34之上方配置有縱型齒條狀(rack-shaped)的晶舟1。在該晶舟1係沿著上下方向隔開預定之間隔地保持有複數個矽晶圓W。又,在晶舟1之側部係配設有用以將反應氣體導入於爐內的氣體導入管35,又,設置有熱電偶保護管36,該熱電偶保護
管36已內建用以測定爐內之溫度的熱電偶。
在如此的縱型低壓CVD裝置30中,係在晶舟1保持有複數個矽晶圓W,且收容於爐本體31內。
接著,將爐內減壓至預定壓力(例如1.3kPa以下),並且加熱至例如600℃至900℃的高溫,且透過氣體導入管35將載送氣體(carrier gas)(H2等)與SiH4等的反應氣體(原料氣體)一起導入於爐內,藉此在矽晶圓W的表面進行多晶矽膜或氮化矽膜(Si3N4)等的形成。
習知的晶舟1係例如於日本特開2008-277781號公報中所揭示。日本特開2008-277781號公報中所揭示的晶舟1係如圖4所示,藉由具有比收納的矽晶圓W更大外徑的上下一對之頂板3及底板4、以及用以連結其等頂板3及底板4的複數根(在圖中為三根)支柱2所構成。再者,頂板3及底板4係與矽晶圓W同樣地形成為圓板狀。
又,如圖5局部放大所示,在前述支柱2係設置有用以支撐矽晶圓W的複數個支撐槽2a,藉此能形成多層之從支柱側面突出的複數個擱板部2b,且在該擱板部2b的上表面形成有晶圓支撐部2b1。能藉由該晶圓支撐部2b1來支撐矽晶圓W的周緣部。
然而,當藉由作為前述擱板部2b之上表面的晶圓支撐部2b1來支撐矽晶圓W時,因晶圓支撐部2b與晶圓周緣部下表面會進行面接觸,有時會藉由晶圓搬出搬入時的滑接而在矽晶圓W的背面產生且附著多數個微粒(particle)。
又,在矽晶圓W的表面亦有在其上側的矽晶圓W之
背面所產生的微粒落下且附著的課題。
又,當在進行熱處理的時候若矽晶圓W被加熱,就會如圖5所示在晶圓周緣部發生些許的彎曲,而與上方的擱板部2b之間隔(間距(clearance)CL)變小,有時晶圓端部會接觸於擱板部2b下表面。
對於前述課題,在日本特開平9-82648號公報中揭示一種如圖6所示使形成於支柱2的擱板部2b之晶圓支撐部2b1設成傾斜於水平面之傾斜面的縱型舟。
如此藉由晶圓支撐部2b1傾斜,就能對在大致水平狀態下被支撐的矽晶圓W藉由線接觸來支撐。為此,能抑制微粒的產生。
又,因如圖示般地藉由擱板部2b整體傾斜,則即便在熱處理時於矽晶圓W的端部發生多少的彎曲,仍能確保較大的晶圓端部與上方的擱板部2b之間隔(間距CL),故而可以防止晶圓端部與擱板部2b的下表面之接觸。
然而,近年來矽晶圓W的大口徑化推進,將矽晶圓W保持於大致水平狀態逐漸變得困難。
亦即,矽晶圓W的中央部會藉由本身重量而朝向下方撓曲,且成為與熱處理無關地使晶圓周緣部朝向上方翹起的狀態。如此當晶圓周緣部朝向上方翹起時,就會產生已傾斜了的晶圓支撐部2b1與晶圓周緣部成為平行的部分,且不是線接觸而是成為面接觸。
為此,會有產生藉由滑接所引起的微粒,或相對於矽晶圓W整體的應力變大,而容易發生滑移(slip)的課題。
本發明係在如前面所述的情形下所開發完成,目的在於提供一種縱型晶舟,可藉由設置成多層的擱板部來支撐處理對象的矽晶圓,即便是大口徑的矽晶圓,仍可以一邊抑制矽晶圓的撓曲,一邊對晶圓外周部的彎曲減低與擱板部之接觸的風險。
為了解決前述課題所完成的本發明之縱型晶舟係具備:複數根支柱,形成有用以搭載矽晶圓的擱板部;以及頂板及底板,固定前述支柱的上下端部;前述擱板部係朝向舟中心側而傾斜於下方,並且在該擱板部的前端部形成有朝向上方突起並與前述矽晶圓之邊緣部抵接的晶圓支撐部。
再者,前述擱板部的傾斜角度較佳為1°以上2°以下的範圍內。
又,前述晶圓支撐部的上表面較佳是形成水平面狀。
又,前述擱板部之徑向的長度尺寸較佳為40mm以上80mm以下的範圍內;前述晶圓支撐部之徑向的長度尺寸較佳為5mm以上10mm以下的範圍內。
依據如此的構成,因擱板部係朝向舟中心側而傾斜於下方,故而在保持矽晶圓並進行熱處理時,即便晶圓周緣部成為朝向上方彎曲的狀態,仍可以充分地確保與上方的擱板部之間隔(間距CL),且可以防止晶圓周緣部與擱板部下表面之接觸。
又,因在擱板部的前端設置有與矽晶圓抵接的晶圓支
撐部,故而矽晶圓的支撐位置會成為比晶圓周緣端部更靠徑向內側,即使大徑的矽晶圓之中央藉由本身重量而朝向下方撓曲,仍可以將該撓曲量抑制得較小。
又,因晶圓支撐部係設為水平面狀,且藉由撓曲而傾斜後的矽晶圓之下表面會抵接於該晶圓支撐部,故而抵接部係成為線接觸,可以藉由將往矽晶圓的應力抑制得較小來防止滑移之發生。
1‧‧‧晶舟
2‧‧‧支柱
2a‧‧‧支撐槽
2b‧‧‧擱板部
2b1‧‧‧晶圓支撐部
3‧‧‧頂板
4‧‧‧底板
30‧‧‧縱型低壓CVD裝置
31‧‧‧爐本體
32‧‧‧製程管
33‧‧‧基座
34‧‧‧舟承座
35‧‧‧氣體導入管
36‧‧‧熱電偶保護管36
CL‧‧‧間距
d1、d2‧‧‧長度尺寸
d3‧‧‧倒角寬度
d4‧‧‧寬度尺寸
h‧‧‧高度
R‧‧‧倒角半徑
W‧‧‧晶圓
θ‧‧‧傾斜角度
圖1係局部放大本發明之縱型晶舟所具備的複數根支柱中之一根而顯示的側視圖。
圖2係形成於圖1之支柱的一擱板部所具有的晶圓支撐部之俯視圖。
圖3係習知的縱型低壓CVD裝置之立體圖。
圖4係習知的晶舟之立體圖。
圖5係局部放大習知的晶舟之支柱的側視圖。
圖6係局部放大習知的另一晶舟之支柱的側視圖。
以下,基於圖式來說明本發明的縱型晶舟之實施形態。再者,在本發明的縱型晶舟中,因與使用圖3、圖4所說明的習知晶舟僅有支撐矽晶圓的擱板部之構成不同,故而有關其他的構成部分係省略詳細的說明。
圖1係局部放大本發明之縱型晶舟(晶舟1)所具備的複數根支柱中之一根而顯示的側視圖。
如圖1所示,在支柱2的內側係沿著其長邊方向隔開
預定之間隔地形成有複數個支撐槽2a。又,藉由形成有複數個支撐槽2a而形成有板狀的擱板部2b。在擱板部2b的前端係形成有以預定之高度h(較佳為h=0.3mm以上1.0mm以下)朝向上方突起的晶圓支撐部2b1,晶圓支撐部2b1係如圖2之俯視圖所示構成為具有預定面積的水平面狀。
矽晶圓W的周緣部下表面係抵接並支撐於分別形成於複數個支柱2的前述擱板部2b之晶圓支撐部2b1,且保持於晶舟。
前述擱板部2b係以其上表面側和下表面側為平行的狀態延伸設置於徑向,且朝向晶舟中心傾斜於下方。該傾斜角度θ較佳是設為1°以上2°以下。此是因當傾斜角度θ超過2°時,就恐有矽晶圓W在搬運、載置時使晶圓支撐部2b1的上表面與矽晶圓W的周緣下表面接觸之虞的緣故。另一方面,是因為在傾斜角度θ未滿1°的情況下,恐有在矽晶圓W變形時(彎曲發生時),矽晶圓W的周緣部上表面會接觸於晶圓支撐部2b1下表面之虞。
又,前述擱板部2b之徑向的長度尺寸d1係形成為40mm以上80mm以下。該徑向的長度尺寸d1係依所支撐的矽晶圓W之直徑而最佳值不同。例如,在矽晶圓W的直徑為300mm的情況下,前述尺寸d1係較佳設為80mm。藉由如此調整擱板部2b之徑向的長度且設定晶圓支撐部2b1的支撐位置,晶圓支撐部2b1的位置就會從晶圓周緣端部靠近晶圓徑向內側,故而可以減小藉由矽晶圓W的本身重量所引起的撓曲之變形量。
又,前述擱板部2b的晶圓支撐部2b1係如圖2所示使其前端的左右角部進行倒角作業。倒角寬度d3係設為0.5mm以上2mm以下,且完成2mm以上8mm以下的R倒角(round chamfering;圓形倒角)較佳。
又,晶圓支撐部2b1之徑向的長度尺寸d2係形成為5mm以上10mm以下。圓周方向的寬度尺寸d4係亦可依支柱2的形狀而形成為所期望的長度。
晶圓支撐部2b1的表面較佳係設為被粗面化後的狀態(表面粗糙度Ra為0.2μm以上0.8μm以下)。藉由該粗面化處理帶給晶圓背面的刮痕(scratch)或滑移受到抑制,且晶圓支撐部2b1往矽晶圓W的黏附變成可被抑制。
依據如此所構成的晶舟1,因擱板部2b係朝向舟中心傾斜於下方,故而在保持矽晶圓W並進行熱處理時,即便矽晶圓W周緣部成為已朝向上方彎曲的狀態,仍可以充分地確保與上方的擱板部2b之間隔(間距CL),且可以防止矽晶圓W周緣部與擱板部2b下表面的接觸。
又,因在擱板部2b的前端設置有與矽晶圓W抵接的晶圓支撐部2b1,故而即便矽晶圓W的支撐位置成為比晶圓周緣端部更靠徑向內側,且大徑的矽晶圓W之中央藉由本身重量朝向下方撓曲,仍可以將該撓曲量抑制得較小。
又,因晶圓支撐部2b1係設為水平面狀,且藉由撓曲而傾斜了的矽晶圓W之下表面會接觸於該晶圓支撐部2b1,抵接部係成為線接觸,可以藉由將往矽晶圓W的應力抑制得較小來防止滑移的發生。
基於實施例來更進一步說明本發明的縱型晶舟。在本實施例中係製造前述實施形態所示的縱型晶舟,且驗證了所獲得的晶舟之性能。
具體而言,為了形成支柱而在SiC質基材上藉由旋轉切削具來形成用以載置矽晶圓的複數個支撐槽。
接著,藉由噴砂(sandblast)處理來將由前述支撐槽所形成的擱板部之上表面(卡止面)粗面化(Ra0.5μm)。
又,在酸性清洗所獲得的支柱之後,進行純水的洗淨,且藉由乾燥來獲得支柱的完成形。又,在同樣地形成必要根數的支柱之後,於此些支柱上裝配頂板、底板,製造出組裝式縱型晶舟。
進一步地,藉由所製造出的縱型晶舟來支撐50片口徑300mm的矽晶圓,且在爐內以750℃進行了1小時的熱處理。
在實施例1至實施例8中,有關擱板部之較佳的徑向長度以及晶圓支撐部的徑向長度係藉由觀察在熱處理後已附著於矽晶圓表面的微粒之個數(附著於ψ 300mm矽晶圓表面的0.2μm以上之微粒個數)以及矽晶圓背面的滑移之發生狀態來進行了驗證。
在表1顯示實施例1至實施例8的條件與其驗證結果。在表1所示的驗證結果中,「微粒附著個數」的○係顯示在ψ 300mm矽晶圓表面並未看到0.2μm以上之微粒附著的狀態,△係顯示已看到微量(在ψ 300mm矽晶圓表面有0.2μm以上之微粒20個以下)的微粒附著的狀態,×係
顯示已看到多量(在ψ 300mm矽晶圓表面有0.2μm以上之微粒超過20個且50個以下)的微粒附著的結果。又,「滑移發生狀態」的○係顯示並未發生滑移的狀態,×係顯示已發生滑移的狀態。
如表1所示的實施例1至實施例4之結果,特別是在擱板部之徑向的長度尺寸係40mm以上80mm以下的情況下(晶圓支撐部的徑向長度固定於7mm),微粒沒有附著,能獲得良好的結果。
又,實施例5至實施例8的結果,特別是在晶圓支撐部之徑向的長度尺寸係5mm以上10mm以下的情況下(擱板部的徑向長度固定於60mm),微粒沒有附著,能獲得良好的結果。
在實施例9至實施例12中,有關擱板部之較佳的傾斜角度,藉由觀察在熱處理後已附著於矽晶圓表面的微粒之個數以及滑移之發生狀態來進行了驗證。
在表2顯示擱板部之傾斜角度的條件及其驗證結果。
在表2所示的驗證結果中,「微粒附著個數」的○係顯示在ψ 300mm矽晶圓表面並未看到0.2μm以上之微粒附著的狀態,△係顯示已看到微量(在ψ 300mm矽晶圓表面有0.2μm以上之微粒20個以下)的微粒附著的狀態,×係顯示已看到多量(在ψ 300mm矽晶圓表面有0.2μm以上之微粒超過20個且50個以下)的微粒附著的結果。又,「滑移發生狀態」的○係顯示並未發生滑移的狀態,×係顯示已發生滑移的狀態。
再者,在表2顯示接續於本實施例所進行後之比較例的結果。比較例1係擱板部雖然傾斜但是不具有朝向上方突起的晶圓支撐部的構成。比較例2係擱板部不傾斜而呈水平,且前端具有朝向上方突起的晶圓支撐部的構成。比較例3係擱板部不傾斜而呈水平,且前端不具有朝向上方突起的晶圓支撐部的構成。
如表2所示的實施例9至實施例12之結果,特別是在擱板部的傾斜角係1.0°以上2.0°以下的情況下,微粒沒有附著,能獲得良好的結果。
又,在比較例1(擱板部為傾斜,支撐部不突起)中,因矽晶圓的口徑較大故而撓曲變大,且與擱板部成為面接觸,發生了多量的微粒附著和滑移。在比較例2(擱板部為水平,具有突起的支撐部)中,雖然滑移並未發生,但是附著了多量的微粒。在比較例3(擱板部為水平,支撐部不突起)中,發生了多量的微粒附著和滑移。
以上的實施例之結果,已確認出藉由本發明的構成,能一邊使矽晶圓的撓曲成為最小,一邊對矽晶圓外周部的彎曲能減低與擱板部的接觸之風險,藉此可以抑制微粒的
發生,且可以防止滑移的發生。
Claims (5)
- 一種縱型晶舟,係具備:複數根支柱,形成有用以搭載矽晶圓的擱板部;以及頂板及底板,固定前述支柱的上下端部;前述擱板部係朝向舟中心側而傾斜於下方,並且在該擱板部的前端部一體地形成有朝向上方突起並與前述矽晶圓之邊緣部抵接的晶圓支撐部;前述晶圓支撐部的上表面之表面粗糙度Ra係0.2μm以上0.8μm以下。
- 如請求項1所記載之縱型晶舟,其中前述擱板部的傾斜角度係1°以上2°以下的範圍內。
- 如請求項1所記載之縱型晶舟,其中前述晶圓支撐部的上表面係形成水平面狀。
- 如請求項1所記載之縱型晶舟,其中前述擱板部之徑向的長度尺寸係40mm以上80mm以下的範圍內。
- 如請求項1所記載之縱型晶舟,其中前述晶圓支撐部之徑向的長度尺寸係5mm以上10mm以下的範圍內。
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