TWI669580B - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

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Publication number
TWI669580B
TWI669580B TW107119206A TW107119206A TWI669580B TW I669580 B TWI669580 B TW I669580B TW 107119206 A TW107119206 A TW 107119206A TW 107119206 A TW107119206 A TW 107119206A TW I669580 B TWI669580 B TW I669580B
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TW
Taiwan
Prior art keywords
substrate
temperature
sulfuric acid
acid solution
processing
Prior art date
Application number
TW107119206A
Other languages
English (en)
Chinese (zh)
Other versions
TW201833692A (zh
Inventor
Kunihiro Miyazaki
宮崎邦浩
Kenji Minami
南健治
Yuji Nagashima
長嶋裕次
Konosuke Hayashi
林航之介
Original Assignee
Shibaura Mechatronics Corporation
日商芝浦機械電子裝置股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corporation, 日商芝浦機械電子裝置股份有限公司 filed Critical Shibaura Mechatronics Corporation
Publication of TW201833692A publication Critical patent/TW201833692A/zh
Application granted granted Critical
Publication of TWI669580B publication Critical patent/TWI669580B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/60—Cleaning only by mechanical processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW107119206A 2014-09-30 2015-09-22 基板處理裝置及基板處理方法 TWI669580B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014-201483 2014-09-30
JP2014201483 2014-09-30
JP2015-163850 2015-08-21
JP2015163850A JP6587865B2 (ja) 2014-09-30 2015-08-21 基板処理装置及び基板処理方法

Publications (2)

Publication Number Publication Date
TW201833692A TW201833692A (zh) 2018-09-16
TWI669580B true TWI669580B (zh) 2019-08-21

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
TW107119206A TWI669580B (zh) 2014-09-30 2015-09-22 基板處理裝置及基板處理方法
TW104131269A TWI629115B (zh) 2014-09-30 2015-09-22 基板處理裝置及基板處理方法
TW106118891A TWI647547B (zh) 2014-09-30 2015-09-22 基板處理裝置及基板處理方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW104131269A TWI629115B (zh) 2014-09-30 2015-09-22 基板處理裝置及基板處理方法
TW106118891A TWI647547B (zh) 2014-09-30 2015-09-22 基板處理裝置及基板處理方法

Country Status (4)

Country Link
JP (3) JP6587865B2 (enExample)
KR (3) KR101780862B1 (enExample)
CN (1) CN108461427B (enExample)
TW (3) TWI669580B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6587865B2 (ja) * 2014-09-30 2019-10-09 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
KR20180013327A (ko) 2016-07-29 2018-02-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP6876570B2 (ja) * 2017-07-28 2021-05-26 株式会社Ｓｃｒｅｅｎホールディングス 処理液除電方法、基板処理方法および基板処理システム
JP7181764B2 (ja) * 2018-03-26 2022-12-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7094147B2 (ja) * 2018-05-30 2022-07-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7220537B2 (ja) 2018-09-20 2023-02-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR102012209B1 (ko) * 2018-10-04 2019-10-21 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7128099B2 (ja) * 2018-11-27 2022-08-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN113448186B (zh) * 2020-03-27 2024-05-14 长鑫存储技术有限公司 晶圆处理装置及晶圆处理方法
KR102622445B1 (ko) * 2020-04-24 2024-01-09 세메스 주식회사 기판 처리 장치 및 액 공급 방법
JP7421410B2 (ja) 2020-04-30 2024-01-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法、学習用データの生成方法、学習方法、学習装置、学習済モデルの生成方法、および、学習済モデル
CN116805595A (zh) * 2022-03-25 2023-09-26 株式会社斯库林集团 衬底处理装置及衬底处理方法
WO2024154418A1 (ja) * 2023-01-19 2024-07-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および、基板処理方法
JP7897169B2 (ja) 2023-02-17 2026-07-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP2024121131A (ja) * 2023-02-27 2024-09-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091288A (ja) * 1998-09-11 2000-03-31 Pyuarekkusu:Kk 高温霧状硫酸による半導体基板の洗浄方法及び洗浄装置
JP2008235341A (ja) * 2007-03-16 2008-10-02 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2009054717A (ja) * 2007-08-24 2009-03-12 Dainippon Screen Mfg Co Ltd 基板処理装置
US20130048609A1 (en) * 2011-08-25 2013-02-28 Norihiro Ito Liquid processing apparatus, liquid processing method and storage medium

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JPH0715895B2 (ja) * 1984-10-29 1995-02-22 富士通株式会社 基板表面洗浄方法
JP3277404B2 (ja) * 1993-03-31 2002-04-22 ソニー株式会社 基板洗浄方法及び基板洗浄装置
JP3540180B2 (ja) * 1998-12-24 2004-07-07 株式会社東芝 半導体装置の製造方法及び製造装置
JP3773458B2 (ja) * 2002-03-18 2006-05-10 大日本スクリーン製造株式会社 基板処理方法及びその装置
JP2007165842A (ja) * 2005-11-21 2007-06-28 Dainippon Screen Mfg Co Ltd 基板処理方法及びその装置
JP5106800B2 (ja) * 2006-06-26 2012-12-26 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP4787089B2 (ja) * 2006-06-26 2011-10-05 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP2008066400A (ja) * 2006-09-05 2008-03-21 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP5460633B2 (ja) * 2010-05-17 2014-04-02 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録した記録媒体
JP5837787B2 (ja) * 2011-09-28 2015-12-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6232212B2 (ja) * 2012-08-09 2017-11-15 芝浦メカトロニクス株式会社 洗浄液生成装置及び基板洗浄装置
JP6587865B2 (ja) * 2014-09-30 2019-10-09 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091288A (ja) * 1998-09-11 2000-03-31 Pyuarekkusu:Kk 高温霧状硫酸による半導体基板の洗浄方法及び洗浄装置
JP2008235341A (ja) * 2007-03-16 2008-10-02 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2009054717A (ja) * 2007-08-24 2009-03-12 Dainippon Screen Mfg Co Ltd 基板処理装置
US20130048609A1 (en) * 2011-08-25 2013-02-28 Norihiro Ito Liquid processing apparatus, liquid processing method and storage medium

Also Published As

Publication number Publication date
KR20180074628A (ko) 2018-07-03
TWI647547B (zh) 2019-01-11
KR101879994B1 (ko) 2018-07-18
JP2016072613A (ja) 2016-05-09
TW201622838A (zh) 2016-07-01
KR20170106277A (ko) 2017-09-20
JP6736735B2 (ja) 2020-08-05
KR101930210B1 (ko) 2018-12-17
TW201833692A (zh) 2018-09-16
CN108461427A (zh) 2018-08-28
KR20160038778A (ko) 2016-04-07
KR101780862B1 (ko) 2017-10-10
JP6970791B2 (ja) 2021-11-24
JP6587865B2 (ja) 2019-10-09
TWI629115B (zh) 2018-07-11
JP2020181993A (ja) 2020-11-05
TW201734675A (zh) 2017-10-01
JP2019220695A (ja) 2019-12-26
CN108461427B (zh) 2022-02-22

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