TWI667779B - 固態成像裝置,固態成像裝置之製造方法及電子設備 - Google Patents

固態成像裝置,固態成像裝置之製造方法及電子設備 Download PDF

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Publication number
TWI667779B
TWI667779B TW104111027A TW104111027A TWI667779B TW I667779 B TWI667779 B TW I667779B TW 104111027 A TW104111027 A TW 104111027A TW 104111027 A TW104111027 A TW 104111027A TW I667779 B TWI667779 B TW I667779B
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TW
Taiwan
Prior art keywords
signal processing
pixel
processing circuit
imaging device
solid
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TW104111027A
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English (en)
Chinese (zh)
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TW201541622A (zh
Inventor
泉原邦彦
Kunihiko Izuhara
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日商新力股份有限公司
Sony Corporation
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Publication of TW201541622A publication Critical patent/TW201541622A/zh
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Publication of TWI667779B publication Critical patent/TWI667779B/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/809Constructional details of image sensors of hybrid image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/199Back-illuminated image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/804Containers or encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5473Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW104111027A 2014-04-21 2015-04-02 固態成像裝置,固態成像裝置之製造方法及電子設備 TWI667779B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014-087603 2014-04-21
JP2014087603 2014-04-21
JP2014-129952 2014-06-25
JP2014129952A JP6245474B2 (ja) 2014-04-21 2014-06-25 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器

Publications (2)

Publication Number Publication Date
TW201541622A TW201541622A (zh) 2015-11-01
TWI667779B true TWI667779B (zh) 2019-08-01

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Country Status (7)

Country Link
US (4) US10217785B2 (enExample)
EP (2) EP3565001B1 (enExample)
JP (1) JP6245474B2 (enExample)
KR (5) KR102678404B1 (enExample)
CN (2) CN105940493B (enExample)
TW (1) TWI667779B (enExample)
WO (1) WO2015162867A1 (enExample)

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TWI872085B (zh) * 2019-06-26 2025-02-11 日商索尼半導體解決方案公司 攝像裝置
CN114424523B (zh) * 2019-11-01 2025-05-23 索尼半导体解决方案公司 固态摄像装置
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Also Published As

Publication number Publication date
EP3134918A1 (en) 2017-03-01
JP2015216334A (ja) 2015-12-03
JP6245474B2 (ja) 2017-12-13
US20190189666A1 (en) 2019-06-20
US20170040371A1 (en) 2017-02-09
KR20160145577A (ko) 2016-12-20
KR102506010B1 (ko) 2023-03-06
EP3565001B1 (en) 2022-07-20
US20240332336A1 (en) 2024-10-03
US10217785B2 (en) 2019-02-26
KR20230035463A (ko) 2023-03-13
EP3134918B1 (en) 2019-06-19
KR102383181B1 (ko) 2022-04-06
US10811454B2 (en) 2020-10-20
TW201541622A (zh) 2015-11-01
WO2015162867A1 (en) 2015-10-29
KR102678404B1 (ko) 2024-06-27
EP3565001A1 (en) 2019-11-06
KR20250069695A (ko) 2025-05-19
KR102807159B1 (ko) 2025-05-14
KR20240100469A (ko) 2024-07-01
CN105940493B (zh) 2019-12-17
US12046619B2 (en) 2024-07-23
CN110957339A (zh) 2020-04-03
US20200403020A1 (en) 2020-12-24
CN110957339B (zh) 2024-02-13
KR20220042251A (ko) 2022-04-04
CN105940493A (zh) 2016-09-14

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