KR102383181B1 - 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기 - Google Patents

고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기 Download PDF

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KR102383181B1
KR102383181B1 KR1020167028470A KR20167028470A KR102383181B1 KR 102383181 B1 KR102383181 B1 KR 102383181B1 KR 1020167028470 A KR1020167028470 A KR 1020167028470A KR 20167028470 A KR20167028470 A KR 20167028470A KR 102383181 B1 KR102383181 B1 KR 102383181B1
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signal processing
substrate
processing circuit
pixel
wiring layer
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KR20160145577A (ko
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쿠니히코 이즈하라
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소니그룹주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H01L27/14634—
    • H01L27/1464—
    • H01L27/1469—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H01L2224/48091—
    • H01L2224/48227—
    • H01L2224/49113—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020167028470A 2014-04-21 2015-04-09 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기 Active KR102383181B1 (ko)

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KR1020227009868A KR102506010B1 (ko) 2014-04-21 2015-04-09 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014087603 2014-04-21
JPJP-P-2014-087603 2014-04-21
JP2014129952A JP6245474B2 (ja) 2014-04-21 2014-06-25 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器
JPJP-P-2014-129952 2014-06-25
PCT/JP2015/001990 WO2015162867A1 (en) 2014-04-21 2015-04-09 Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic apparatus

Related Child Applications (1)

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KR1020227009868A Division KR102506010B1 (ko) 2014-04-21 2015-04-09 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기

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KR20160145577A KR20160145577A (ko) 2016-12-20
KR102383181B1 true KR102383181B1 (ko) 2022-04-06

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KR1020167028470A Active KR102383181B1 (ko) 2014-04-21 2015-04-09 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기
KR1020257015066A Pending KR20250069695A (ko) 2014-04-21 2015-04-09 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기
KR1020237007336A Active KR102678404B1 (ko) 2014-04-21 2015-04-09 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기
KR1020247020532A Active KR102807159B1 (ko) 2014-04-21 2015-04-09 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기
KR1020227009868A Active KR102506010B1 (ko) 2014-04-21 2015-04-09 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기

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KR1020237007336A Active KR102678404B1 (ko) 2014-04-21 2015-04-09 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기
KR1020247020532A Active KR102807159B1 (ko) 2014-04-21 2015-04-09 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기
KR1020227009868A Active KR102506010B1 (ko) 2014-04-21 2015-04-09 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기

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US (4) US10217785B2 (enExample)
EP (2) EP3565001B1 (enExample)
JP (1) JP6245474B2 (enExample)
KR (5) KR102383181B1 (enExample)
CN (2) CN110957339B (enExample)
TW (1) TWI667779B (enExample)
WO (1) WO2015162867A1 (enExample)

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KR20160145577A (ko) 2016-12-20
KR20230035463A (ko) 2023-03-13
EP3565001B1 (en) 2022-07-20
US20170040371A1 (en) 2017-02-09
US20190189666A1 (en) 2019-06-20
KR102506010B1 (ko) 2023-03-06
EP3565001A1 (en) 2019-11-06
KR20240100469A (ko) 2024-07-01
CN105940493B (zh) 2019-12-17
JP2015216334A (ja) 2015-12-03
CN105940493A (zh) 2016-09-14
US12046619B2 (en) 2024-07-23
US20200403020A1 (en) 2020-12-24
JP6245474B2 (ja) 2017-12-13
EP3134918A1 (en) 2017-03-01
KR102678404B1 (ko) 2024-06-27
US10217785B2 (en) 2019-02-26
KR20220042251A (ko) 2022-04-04
CN110957339A (zh) 2020-04-03
WO2015162867A1 (en) 2015-10-29
TW201541622A (zh) 2015-11-01
EP3134918B1 (en) 2019-06-19
CN110957339B (zh) 2024-02-13
KR20250069695A (ko) 2025-05-19
KR102807159B1 (ko) 2025-05-14
US20240332336A1 (en) 2024-10-03
TWI667779B (zh) 2019-08-01
US10811454B2 (en) 2020-10-20

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