TWI667754B - 具有鑽石與金屬或金屬合金的交替形態的複合基材 - Google Patents
具有鑽石與金屬或金屬合金的交替形態的複合基材 Download PDFInfo
- Publication number
- TWI667754B TWI667754B TW105103878A TW105103878A TWI667754B TW I667754 B TWI667754 B TW I667754B TW 105103878 A TW105103878 A TW 105103878A TW 105103878 A TW105103878 A TW 105103878A TW I667754 B TWI667754 B TW I667754B
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- Prior art keywords
- metal
- composite substrate
- diamond
- electrical
- electrical conductors
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 231
- 239000002184 metal Substances 0.000 title claims abstract description 231
- 239000000758 substrate Substances 0.000 title claims abstract description 214
- 239000010432 diamond Substances 0.000 title claims abstract description 205
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 199
- 239000002131 composite material Substances 0.000 title claims abstract description 104
- 229910001092 metal group alloy Inorganic materials 0.000 title claims abstract description 8
- 239000012634 fragment Substances 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims description 72
- 239000000615 nonconductor Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 32
- 238000005229 chemical vapour deposition Methods 0.000 claims description 29
- 230000007246 mechanism Effects 0.000 claims description 21
- 229910001080 W alloy Inorganic materials 0.000 claims description 20
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 238000010292 electrical insulation Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 4
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 43
- OXVUUZZHYVQASQ-UHFFFAOYSA-N copper tungsten Chemical compound [W][Cu][W] OXVUUZZHYVQASQ-UHFFFAOYSA-N 0.000 description 29
- 239000011159 matrix material Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 230000008646 thermal stress Effects 0.000 description 12
- 230000017525 heat dissipation Effects 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000011149 active material Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 208000035967 Long Term Adverse Effects Diseases 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
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- H—ELECTRICITY
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Abstract
一種複合基材包括複數個電絕緣的部分、片、層或片段與複數個導電的部分、片、層或片段的交替形態的子鑲嵌基底,以及一軸體、一背體或一板體,軸體、背體或板體用於支撐複數個電絕緣的部分與複數個導電的部分的交替形態,一具有P-N接面的主動元件係安裝在子鑲嵌基底上,複數個電絕緣的部分、片、層或片段可由鑽石形成,且複數個導電的部分、片、層或片段可由金屬或金屬合金形成。
Description
本發明相關於一種具有電絕緣材料與導電材料的交替形態的複合基材,特別是相關於一種具有鑽石與含有金屬的部分、片或片段的交替形態的複合基材。
包括P-N接面(P-N junctions)的主動電子元件在運作時會產生熱。舉例來說,這樣的主動元件包括一半導體雷射、一發光二極體及一雷射二極體。這樣的熱能應該最好及時排除,以避免在主動元件中造成不被希望的溫度上升,其會對該主動元件造成暫時性或長期性的不良影響。
在關於一雷射二極體的例子中,溫度變化可能導致自該雷射二極體所產生的雷射光線的波長偏移。這樣的波長偏移,即使僅是細微的偏移,都是不良的。又舉例來說,一個高功率的雷射二極體可以有10%至50%之間的電能轉換為光能的效率。該電能的剩餘部分係被轉換成熱能,而該熱能需要被除去,否則半導體接面的溫度會上升到一個不被希望的程度。此外,由於散熱不足所導致的溫度上升係對波長輸出以及能隙有直接的影響。舉例來說,就每攝氏三度的溫度變化而言,雷射二極體的波長的改變可接近一奈米。另外,該雷射二極體的能量輸出功率會隨著溫度的升高而降低。
一般而言,這樣的主動元件係透過各種黏合機制,例如黏合劑或焊料而耦接一子鑲嵌基底,該子鑲嵌基底係幫助散熱。在一個例子中,該主動元件為一半導體雷射或一雷射二極體,而形成該主動元件的材料的線膨脹係數(coefficient of thermal expansion, CTE)可在3x10-6
m/K 至7x10-6
m/K的範圍中。相對地,該主動元件所安裝的子鑲嵌基底的材料可具有一介於10至25x10-6
m/K的線膨脹係數,該線膨脹係數係取決於經選擇形成該子鑲嵌基底的材料。從這個例子可以看出,形成該主動元件的材料的線膨脹係數(介於3x10-6
m/K 至7x10-6
m/K)係明顯不匹配於形成該子鑲嵌基底的材料的線膨脹係數(介於10x10-6
m/K 至25x10-6
m/K)。
公知地,在現有技術中,上述的主動元件的材料與子鑲嵌基底的材料之間的線膨脹係數的差異,會因應主動元件在運作過程中所產生的溫度變化而導致主動元件和子鑲嵌基底之間黏合的失敗。為了避免這個問題,迄今為止,形成子鑲嵌基底及主動元件的材料會盡可能選擇線膨脹係數相近的材料。然而,這些努力並沒有產生令人滿意的結果。
至此,真正的挑戰存在於達到子鑲嵌基底的材料(群)及主動元件的材料(群)之間的為接近的線膨脹係數的匹配,且同時藉由選擇一高導熱性的子鑲嵌基底材料以達到該主動元件的高效率的散熱。在現有技術的一個例子中,子鑲嵌基底的線膨脹係數可藉由例如銅-鎢或銅-鉬等的金屬複合材料而被調整。銅- 鎢及銅-鉬的線膨脹係數可以自銅的線膨脹係數17x10-6
m/K而被調整為6x10-6
m/K至9x10-6
m/K之間,其中該銅- 鎢及銅-鉬的線膨脹係數係取決於銅的百分比程度。舉例來說,含15%銅的鎢具有7.2x10-6
m/K的線膨脹係數,且其熱導率約為210W/m-K。在另一個例子中,含20%銅的鉬具有7.5x10-6
m/K的線膨脹係數,且其熱導率僅約為165W/m-K。
鑽石是具有最高導熱材料中的其中一種,其具有的熱導率高達2,200W/m-K或更高。因此,鑽石是用以使主動元件予以散熱的理想材料。然而,鑽石的線膨脹係數約為1x10-6
m/K,大幅偏離主動元件材料的線膨脹係數(介於3x10-6
m/K 至7x10-6
m/K之間)。因此,安裝於一鑽石子鑲嵌基底上的一主動裝置子鑲嵌基底於運作時所上升的一溫度會產生在主動上元件的熱壓縮應力。由於該主動元件與該鑽石子鑲嵌基底在線膨脹係數的不匹配所導致的這樣的熱應力,會導致該主動裝置與鑽石子鑲嵌基底的不被希望的黏合失敗。
在另一個例子中,子鑲嵌基底的線膨脹係數可藉由製造鑽石顆粒混於金屬或金屬基體如鋁、銅及/或銀的複合體而調整。這種複合體中的鑽石體積百分比可以在這樣的金屬或金屬基體中高達70%。這種具有鑽石顆粒以及金屬或金屬基體的複合體的熱導率範圍可以從300至650W/m-K,而未到達複合體的一理論熱導率的值(透過給予鑽石顆粒的體積百分比和金屬基體的體積百分比的線性模型來確定)。對具有70%體積百分比的鑽石顆粒以及30%體積百分比的作為基體的銅的複合體而言,使用線性模型所計算出的理論熱導率約為1320W/m-K。
據認為,此種具有鑽石顆粒及銅金屬基體的複合體無法達成這樣的理論熱導率,可歸因介於鑽石顆粒的表面及金屬基體的表面之間的空隙和/或界面材料。在一例子中,直接混合和熔融鑽石顆粒及金屬或金屬基體可能導致空隙形成於鑽石顆粒及金屬或金屬基體間的界面,而導致鑽石顆粒的熱負載降低,換句話說,導致較低的熱導率。該鑽石顆粒的表面可以用界面材料修飾,例如一碳化矽層、碳化鎢層、碳化鉬層或其它的任何合適的金屬碳化物層,其允許在金屬或金屬基體中的鑽石顆粒具有較高的熱負載。然而,這樣的界面材料的熱導率一般明顯地低於鑽石的熱導率。在一個例子中,碳化矽及碳化鎢的熱導率分別是100W/m-K及225W/m-K。因此,在自主動元件經子鑲嵌基底傳導熱能的過程中,鑽石顆粒和金屬基體之間的這種界面材料會給予一大幅度的熱阻。
鑽石顆粒及金屬基體的複合材料無法達成理論熱導率也可歸因於熱傳導機制的混合物。具體而言,透過擴散的電子的移動係為金屬基體中主要的導熱方式。即使沒有自由電子,透過沿鑽石晶格的聲子頻散,鑽石中的強大的Sp3
軌域碳-碳共價鍵係為鑽石的高熱導率的主因。在鑽石/金屬或金屬基體的鑽石材料中的聲子傳導與在鑽石/金屬或金屬基體的金屬材料中的電子擴散之間的能量交換可從根本上地降低自主動元件經由鑽石顆粒與金屬基體的複合體所製成的子鑲嵌基底整體的熱傳導。
本發明係為一種複合基材,在一個例子中,其包含一具有複數個鑽石部分以及複數個金屬或含金屬部分的交替形態的子鑲嵌基底。子鑲嵌基底的鑽石部分可藉由聲子沿鑽石晶格的Sp3
碳-碳共價鍵傳輸而傳導熱能,而金屬或含金屬部分係藉由電子運動而傳導熱能。這種組合允許一安裝於該子鑲嵌基底的主動元件在較低的溫度或在較高的功率下運作,或是更理想地以兩者的結合而運作。
在一個例子中,子鑲嵌基底的複合材料的線膨脹係數可以藉由改變鑽石部分和/或金屬部分的幾何形狀而予以調整。以這種方式,主動元件的線膨脹係數與子鑲嵌基底的複合材料的線膨脹係數之間的線膨脹係數差值可被控制,以減少當供給主動元件的電能係在開啟和關閉之間循環時,因安裝於子鑲嵌基底的主動元件於運作時所產生的溫度波動而對主動元件所造成的熱應力。這些被減少的熱應力可導致主動元件具有更長的壽命,及/或允許主動元件在較高的功率水平運作。
當一主動元件或一主動元件陣列安裝且直接對準於子鑲嵌基底的(多個)鑽石部分,跨越該陣列的一溫度上升平穩區域係被降低到像安裝於現有技術的子鑲嵌基底的陣列,以及跨越陣列的溫度振幅也被減震至像安裝於現有技術的子鑲嵌基底的陣列,從而減少熱應力以及跨越主動元件的陣列的對應溫度振幅。
在一個例子中,子鑲嵌基底具有沿著直角座標系的X、Y及Z方向的相應的長度、寬度及高度,鑽石部分及金屬或含金屬的部分的寬度(Y方向)在X方向上橫向交替;子鑲嵌基底的鑽石部分及金屬或含金屬的部分的長度沿Y方向延伸;以及一個或多個主動元件係沿Z方向安裝於子鑲嵌基底的頂部。在一個例子中,其中兩個或更多個主動元件組成的單排主動元件係安裝於子鑲嵌基底的頂部,每一個主動元件可安裝於複數個鑽石部分的單一個。
在另一個例子中,複合基材包括一具有安裝於一金屬或含金屬層的一側的一鑽石層的子鑲嵌基底。一或多個主動元件可安裝於金屬或含金屬層的其他側,例如相反於鑽石層的金屬或含金屬層的一側。
各種較佳的和非限制性的實施例或本發明的各方面將描述及列於以下:
本發明為解決習知技術之問題所採用之技術手段係提供一種複合基材,包含:一組為相互間隔的複數個電導體;一支承機構,用於支承該組相互間隔的複數個電導體 ;以及一組複數個電絕緣體,其中在每個成對的該相互間隔的複數個電導體之間係設置於該複數個電絕緣體中的一個電絕緣體,而使該電絕緣體為接觸於該成對的複數個電導體。
在本發明的一實施例中係提供一種複合基材,更包括至少一個主動元件,係設置於下述者的其中之一個或二個之上方:該複數個電絕緣體中的一個電絕緣體的一部分,該部分係為未接觸於該相互間隔的複數個電導體中的一個電導體;以及該複數個電導體中的一個電導體的一部分,該部分係為未接觸於該複數個電絕緣體中的至少一個電絕緣體。
在本發明的一實施例中係提供一種複合基材,該用於支承該組相互間隔的複數個電導體的支承機構係設置於該主動元件及該複數個電絕緣體中的至少一個電絕緣體之間。
在本發明的一實施例中係提供一種複合基材,該主動元件係為具有至少一個P-N接面的半導體元件。
在本發明的一實施例中係提供一種複合基材,該複合基材的熱膨脹係數相對於該主動元件的熱膨脹係數的比值為0.4至2、或0.5至1.8、或0.6至1.6、或0.7至1.4、或0.8至1.2。
在本發明的一實施例中係提供一種複合基材,每一個該電絕緣體係包含一鑽石。
在本發明的一實施例中係提供一種複合基材,每一個該電導體係包含一金屬或一金屬合金。
在本發明的一實施例中係提供一種複合基材,每一個該電導體係包含一銅-鎢合金。
在本發明的一實施例中係提供一種複合基材,該用於支承該組相互間隔的複數個電導體的支承機構包括以下之一:一軸體或一背體,耦接於每一個該電導體的一端;或一板體,耦接於每一個該電導體的一側。
在本發明的一實施例中係提供一種複合基材,該相互間隔的複數個電導體及該用於支承該組相互間隔的複數個電導體的支承機構係為一由相同材料所形成的整體件。
在本發明的一實施例中係提供一種複合基材,每一個該電絕緣體係為:直接成長於接觸於該電絕緣體的該對電導體;或係為結合於接觸於該電絕緣體的該對電導體;或係為直接接觸於該對電導體。
在本發明的一實施例中係提供一種複合基材,每一個直接成長於接觸於該電絕緣體的該對電導體的該電絕緣體係透過化學氣相沉積成長。
在本發明的一實施例中係提供一種複合基材,每一個結合於接觸於該電絕緣體的該對電導體的該電絕緣體係透過一附著劑結合。
在本發明的一實施例中係提供一種複合基材,更包括一介電材料,設置於該主動元件與下述者的其中之一個或二個的之間:一個該電絕緣體的該部分;以及一個該電導體的該部分。
在本發明的一實施例中係提供一種複合基材,更包括設置於該介電材料上的至少一導體,經配置而傳遞電訊號至該主動元件的接點及/或自該主動元件的接點傳遞電訊號。
本發明為解決習知技術之問題所採用之技術手段係提供一種複合基材,包含複數個鑽石的部分、片、層或片段以及複數個金屬或含金屬的部分、片、層或片段的交替形態,其中每一個含金屬的部分、片、層或片段具有小於12x10-6
m/K、小於11x10-6
m/K、小於10x10-6
m/K或小於9x10-6
m/K的線膨脹係數。
在本發明的一實施例中係提供一種複合基材,更包括一用於支承該複數個鑽部分、片、層或片段以及複數個金屬或含金屬的部分、片、層或片段的交替形態的支承機構,包括以下其中之一:一軸體或一背體,耦接於每一個含金屬的部分的一端;或一板體,耦接於每一個含金屬的部分的一側。
在本發明的一實施例中係提供一種複合基材,該主動元件包括一P-N接面。
在本發明的一實施例中係提供一種複合基材,該複合基材的熱膨脹係數相對於該主動元件的熱膨脹係數的比值為0.4至2、或0.5至1.8、或0.6至1.6、或0.7至1.4、或0.8至1.2。
在本發明的一實施例中係提供一種複合基材,該複數個鑽部分、片、層或片段以及複數個金屬或含金屬的部分、片、層或片段的交替形態定義出一子鑲嵌基底,該複合基材更進一步包括:一介電層,設置於該主動元件以及該子鑲嵌基底的至少一部分;以及一導體,形成於該介電層之上,該導體與該主動元件為電連續性的接觸。
本發明所採用的具體實施例,將藉由以下之實施例及附呈圖式作進一步之說明。
下面的例子將參考附圖進行說明,其中相同的參考數字係對應於相似或者功能上等同的元件。
以下根據第1A圖至第7圖,而說明本發明的實施方式。該說明並非為限制本發明的實施方式,而為本發明之實施例的一種。
第1A圖至第5圖顯示不同的實施例的複合基材2,每一個複合基材2皆包含一具有複數個鑽石的部分、片或片段4以及複數個金屬或含金屬的部分、片或片段6的交替形態的子鑲嵌基底62。在下文中,關於(多個)金屬部分6及(多個)含金屬的部分6可互換使用,意指包含單一金屬或金屬合金的(多個)部分6。複合基材2可進一步包含一主動元件10或一主動元件10的陣列,例如雷射二極體,並可藉由不同的黏合機制(例如焊錫、黏合劑等)安裝於子鑲嵌基底62的頂部。子鑲嵌基底62可以是任何的幾何形狀。第1A圖至第6圖顯示具有X、Y及Z維度的矩形幾何形狀,其中X相對於Z的比值以及Y相對於Z的比值皆大於等於1。
鑽石部分4可為多晶或單晶的鑽石。每一個鑽石部分4可以是矩形條狀、梯形條狀、弧形條狀、三角形條狀、或任何規則或不規則形狀。在一個例子中,每一個鑽石部分4基本上是連續的,並且可以連接或成長於子鑲嵌基底62的金屬部分6,該金屬部分6可以是任何的幾何形狀。
鑽石部分4可透過化學氣相沉積(chemical vapor deposition,CVD)處理而直接生長於金屬部分6的表面上,例如熱燈絲電漿CVD、直流噴射電漿CVD、雷射誘導電漿CVD、乙炔炬CVD、無線射頻電漿CVD、火焰電漿CVD或微波電漿CVD。生長於金屬部分6的鑽石部分4的暴露表面可選擇性地被予以研磨或進一步被予以拋光以達成理想的表面以用於黏合於(多個)主動元件10或其他主動或被動元件,進而利於在該些元件於運作時散熱。
子鑲嵌基底62的表面可以透過一個或多個金屬層,例如鎳、銀、金或鉑等等,及/或電介質層,例如氮化鋁、氮化硼、氧化鈹、氧化鋁或二氧化矽等等而被予以電鍍或被予以沉積。
金屬部分6可包括一種能形成碳化物鍵結的化學元素。舉例來說,形成碳化物的金屬可包括例如鎢、鉬、鈦、矽、鉻、鈮、鋯、鉭及鉿等等。金屬部分6可包括其他元素,例如銅、鋁、銀或用於調整金屬部分6的熱膨脹係數至低於12x10-6
m/K並提高碳化物鍵結形成金屬的熱導率的一種元素周期表中的賤金屬。
為了達到鑽石部分4和金屬部分6之間接合表面的結合,金屬部分6的表面可選擇性地以化學處理,以直接將鑽石材料種於金屬部分6上。在一個例子中,化學處理可為對金屬部分6進行化學蝕刻,例如蝕刻銅-鎢合金(形成金屬部分6)的表面而使鑽石部分4更為良好地接合於金屬部分6。用於蝕刻的化學製品可以是一酸、鹼、鹽類、螯合劑、氧化劑及/或還原劑,並伴隨一選擇性的液體或氣體媒介(例如水或氣體)。用於蝕刻的酸可以是硝酸、鹽酸、硫酸、磷酸、氯酸、過氯酸或鉻酸等等。
無論是單一金屬元素或與另一元素混合的金屬合金的金屬部分6,可具有一線膨脹係數αMetal
。鑽石部分4可具有介於1.0 m/ K至1.2x10-6
m/ K的線膨脹係數(αDia
)。可以有m個金屬部分6及n個鑽石部分4。金屬部分6的尺寸(例如寬度)Metalj
不必是相同的。鑽石部分的4的尺寸(例如寬度)Diai
也不必是相同的。形成主動元件10的材料的線膨脹係數係表示為αActive-Material
。金屬部分6和鑽石部分4之間的關係式可表示為如下: (式1)其中,在第1A圖的實施例中, Diai
= 鑽石層i在X方向上的寬度;以及 Metalj
= 金屬層j在X方向上的寬度。
在式1的等式右邊的首項係數,即δ,是子鑲嵌基底62的線膨脹係數與(多個)主動元件10(例如:以砷化鎵製成的雷射二極體)的線膨脹係數之間的匹配的程度的指標。當參數δ接近1,子鑲嵌基底62的線膨脹係數以及(多個)主動元件10的線膨脹係數係為接近的匹配。為了減少子鑲嵌基底62及(多個)主動元件10之間的熱應力,參數δ可改變,在一個例子中,為0.4至2;在另一個例子中,為0.5至1.8;在另一個例子中,為0.6至1.6;在又一個例子中,為0.7到1.4;以及又一個例子中,為0.8到1.2。
為了使鑽石部分4和金屬部分6之間的熱應力為一個可接受的程度,於一個例子中,金屬部分6(無論是單一金屬元素或金屬合金)具有小於12x10-6
m/K的線膨脹係數;在另一個例子中,為小於11x10-6
m/K;在又一個例子中,為小於10x10-6
m/K;以及又一個例子中,為9x10-6
m/K。因此,鑽石部分4和金屬部分6之間的線膨脹係數的局部不匹配可以被予以最小化,從而降低子鑲嵌基底62的鑽石部分4及金屬或金屬部分6的邊界之間的局部熱應力。
為了要降低由在(多個)主動元件10及子鑲嵌基底62之間的一接近的線膨脹係數所產生的熱應力,第1A圖至第6圖所示的複合基材2具有更多的其他的優點,包括:沿Y方向跨越鑽石部分4的良好的熱擴散;以及沿Z方向經由鑽石部分4至,例如舉例來說用於最終散熱的子層材料(例如配備有水冷通道的一散熱器)的良好的散熱。為了達到最佳散熱性能,子鑲嵌基底62的高度Z可盡可能的薄,而子鑲嵌基底62的寬度Y可盡可能的寬,由此在一個例子中寬度Y至高度Z的比例為大於1或大於2。為了利於一個或一個以上的主動元件10的安裝,子鑲嵌基底62的長度X至高度Z的比例為大於1或大於2。在一個例子中,子鑲嵌基底62的長度X至寬度Y的比例可在0.001至1000之間變化;在另一個例子中,可在0.01至100之間變化;在又一個例子中,可在0.05至20之間變化;並又一個例子中,可在0.1至10之間變化。
在第1A圖至第5圖中所示的每一個例子中的子鑲嵌基底62,鑽石部分4中藉由沿鑽石晶格Sp3
軌域聲子傳輸的機制同時發生在水平方向(X)的熱擴散以及垂直方向(Z)的散熱。聲子傳輸是已知最快的熱傳機制。雖然未如鑽石部分4一樣的有效,但金屬部分6藉由金屬部分6的導熱性而進行水平方向(X)的熱擴散和垂直方向(Z)的散熱。
每一個主動元件10皆可安裝且直接對準於一個鑽石部分4的一部分、一個金屬部分6的一部分或鑽石部分4及金屬部分6的一混合部分。在一個例子中,一個主動元件10可安裝或直接地設於具有一或多個鑽石部分4、一或多個金屬部分6或該二者混合的子鑲嵌基底62的頂部區域。該主動元件10的寬度可以是大於、小於或等於一個鑽石部分4的寬度。鑽石部分4可具有比一個主動元件10的一有效區域更狹窄的寬度而有利於減緩溫度波動。
每一個主動元件10於運作時會產生熱能。相鄰的一對主動元件10之間的空隙通常不會產生熱。因此,於主動元件10或一主動元件10的陣列的運作期間,源自於每一個主動元件10的有效區域(例如,雷射二極體或發光二極體等的發射極的P-N接面區)的熱形成跨越主動元件10或主動元件10陣列的溫度分佈,而有效區域之外或之間的區域,例如兩個二極體發射極之間,具有一溫度最小值,然而該溫度最小值仍高於閒置的主動元件10或主動元件10陣列的溫度。這樣不均勻的受熱可能導致在一上升的溫度平緩區域的一溫度波動。這樣的溫度波動可由於熱膨脹波動而產生橫跨於每一個主動元件10的熱應力波動。舉例來說,如果子鑲嵌基底的線膨脹係數係大於主動元件10的材料的線膨脹係數,特別是在主動元件10與子鑲嵌基底62的線膨脹係數高度不匹配的情況下,則一拉伸應力會產生在主動元件10的有效區域上。如果(多個)主動元件10及子鑲嵌基底62之間的線膨脹係數不匹配,在一溫度平緩區域下它們之間也會產生熱應力。因此,當一主動元件10(例如一雷射二極體發射器)係安裝且對準於子鑲嵌基底62的一鑽石部分4(的頂部),主動元件10所產生的熱在運作期間很快地進入鑽石部分4並沿著第1A圖至第5圖所示的Z方向被予以散去。由主動元件10所產生的熱也在鑽石部分4中快速地沿著第1A圖至第5圖所示的水平方向Y上傳播並散熱;在Z方向,(熱能)進入鑽石部分4的下方以散熱,而有效地讓更大的面積(鑽石下方)可用於散熱。因此,在主動元件10的運作期間的整個溫度的上升度是較低的(達到一較低的溫度平緩區域),這對於最小化熱應力、允許主動元件10更有效率地運作、具有較長的壽命及/或以高功率程度運作是非常理想的。同時,由於鑽石部分4係比金屬部分6更為快速地散去經製造出的熱而理想地減緩溫度震盪,溫度平緩區域上的溫度波動於實質上係被予以減緩,因此,跨越一主動元件10或一主動元件10陣列的熱應力波動也被予以減緩。
在一個例子中,子鑲嵌基底62可具有安裝在其上的雷射二極體陣列,並具有,例如,10個發射器以及用於該些雷射二極體作為有效區域的砷化鎵。在一個例子中,雷射二極體陣列可為主動元件10的一維陣列,例如參照第1A圖至第5圖,水平地安裝在子鑲嵌基底62的頂部並沿子鑲嵌基底62的邊緣排列的雷射二極體,並發射平行於子鑲嵌基底62的頂部表面,即沿第1A圖至第5圖的Y方向的光。一個單獨的雷射二極體的寬度(X)可為100微米。重複形態的陣列的間距可為200微米。一個設計簡單的子鑲嵌基底62可包括10個鑽石部分4以及包含子鑲嵌基底11個金屬部分6(例如一具有20%銅及80%鎢的銅-鎢合金,其具有約7.70 ppm/K的線膨脹係數)的交替形態,且金屬部分6包含子鑲嵌基底62的二端。每一個鑽石部分4可設置於主動元件10的中心的下方的一成對的金屬部分6之間,並且可以為,例如,60微米的寬度(X方向)。每一個金屬部分6可為140微米的寬度(X方向),並主要位於主動元件10之間。對於每一個200微米的間距,子鑲嵌基底62的線膨脹係數經計算(使用上述的公式)約為5.75 ppm/K,參數δ為0.991,非常地接近匹配於砷化鎵的線膨脹係數(5.8 ppm/K)。增加鑽石部分4的寬度至70微米以及降低銅-鎢金屬部分6的寬度至130微米,將會導致子鑲嵌基底62經計算的線膨脹係數約為5.425 ppm/K(使用上述的公式計算),參數δ為0.935。降低鑽石部分4的寬度至40微米以及增加銅-鎢金屬部分6的寬度至160微米,將會導致子鑲嵌基底62經計算的線膨脹係數約為6.4 ppm/K,參數δ為1.10。(多個)主動元件10的材料(群)與(多個)子鑲嵌基底62的材料群之間的整體線膨脹係數的匹配可助於避免「微笑」(翹曲)的問題。
藉由文中所描述的子鑲嵌基底62,(多個)主動元件10的線膨脹係數以及子鑲嵌基底62的整個的線膨脹係數可接近地相匹配。因此,「微笑」(翹曲)的問題可隨著參數δ在0.4與2.0之間的範圍值而被最小化,或隨著參數δ接近1而避免。此外,藉由(多個)鑽石部分4及(多個)金屬部分6的交替形態,溫度升高平緩區域以及溫度波動可被最小化,且每一個鑽石部分4相較於金屬部分6更利於傳播熱能及散熱,特別是當主動元件10(例如雷射二極體)被直接地安裝於(集中在)鑽石部分4的頂部。鑽石部分4的寬度也可被調整以使溫度平緩區域盡可能的平緩。一種可達成的方法是藉由沿著邊緣(鄰近金屬部分6)較狹窄的鑽石部分4以及中心(成對的金屬部分6的中間)較寬的鑽石部分4,而相較於鑽石部分4的中心減緩鑽石部分4的邊緣的冷卻。
在另一個例子中,子鑲嵌基底62可為垂直腔面發射雷射器(Vertical-Cavity Surface-Emitting Laser,VCSEL)陣列的基座,舉例來說, 225個發射器(主動元件10的一15x15陣列)以及砷化鎵係作為這些雷射二極體的活性材料。在此例子中,VCSEL陣列係為雷射二極體的二維陣列,並安裝於子鑲嵌基底62的頂部表面上,且發射垂直於子鑲嵌基底62的頂部表面(即第1A圖至第6圖所示沿Z方向)的光線。在此例子中,這些VCSEL係排列成15行(X方向)及15列(Y方向),且每一列的該15個VCSEL係設置於單個鑽石部分4(例如頂部中心)。假設每個雷射二極體具有直徑為100微米的發光區域。又假設這些發射器的重複形態的間距約為250微米。一個簡單的子鑲嵌基底62的設計例子可包括一15個鑽石部分4以及子鑲嵌基底16個金屬部分6(例如一具有20%銅及80%鎢的銅-鎢合金,其具有約7.70x10-6
m/K的線膨脹係數)的交替形態,且金屬部分6係在子鑲嵌基底62的兩端。鑽石部分4的寬度可為100微米(第1A圖至第5圖所示的X方向)以及銅-鎢金屬部分6的寬度可為150微米(第1A圖至第5圖所示的X方向上)。對於每一個間距,整個子鑲嵌基底62的線膨脹係數可經計算(使用上述的公式)而約為5.10 ppm/K,參數δ為0.88,接近匹配砷化鎵的線膨脹係數(5.8 ppm/K)。降低鑽石部分4的寬度至75微米同時增加銅-鎢部分6的寬度至175微米,將會導致子鑲嵌基底62的線膨脹係數約為5.75ppm/K,參數δ為0.999。降低鑽石部分4的寬度至40微米,同時增加銅-鎢部分6的寬度至210微米,將會導致子鑲嵌基底62的線膨脹係數約為6.66ppm/K,參數δ為1.15。
達成在主動元件10的材料(例如由砷化鎵製作的VCSEL)與本文中所述的各示例的子鑲嵌基底62的線膨脹係數的匹配能幫助避免主動元件10的物理變形。(多個)主動元件10的安裝通常包括在一升高的溫度(例如攝氏200至400度)中焊接主動元件10到一基板,例如子鑲嵌基底62。藉由子鑲嵌基底62,(多個)主動元件10的線膨脹係數以及子鑲嵌基底62整體的線膨脹係數可接近地相匹配,進而在參數δ在0.4和2.0之間的範圍內下降低或在參數δ等於1下避免(多個)主動元件10的物理變形
除此之外,三維的溫度升高平緩區域及在溫度平緩區域上的溫度波動可以透過(多個)鑽石部分4及(多個)金屬部分6的交替形態而被最小化,且每一個鑽石部分4相較於金屬部分6更利於傳播熱能及散熱,特別是每一個主動元件10(例如雷射二極體)例如,直接地安裝於(集中在)鑽石部分4的頂部。鑽石部分4的寬度也可被調整以使溫度平緩區域盡可能的平緩。一種可達成的方法是藉由鄰近金屬部分6的邊緣中的較狹窄的鑽石部分4以及鑽石部分的中心的較寬的鑽石部分4,該方法相較於在鑽石部分4的中心的冷卻,係刻意減緩在鑽石部分4的邊緣的冷卻。
在一個例子中,用於15x15的二維VCSEL陣列的子鑲嵌基底62具有15個鑽石部分4(X方向)及16個金屬部分6(Y方向),VCSEL陣列中的每一個主動元件10(雷射二極體)可直接地安裝於(集中在)鑽石部分4的其中一個的頂部,且15個VCSEL安裝於單一的鑽石部分4。這些雷射二極體於運作時所產生的熱透過一下方層(圖未示,有時配備有水冷卻通道)的用以移除熱的鑽石部分4而快速地散熱或傳播,該下方層允許VCSEL以較低的溫度或以較高的功率(在同樣溫度下)運作,或是更理想地以兩者的結合而運作。
現在將參照第1A圖至第6圖說明各個實施例的複合基材2的細節。
參考第1A圖至第1D圖,一例子中的複合基材2包括複數個鑽石的部分、片或片段4以及複數個金屬或含金屬的部分、片或片段6的交替形態。在一個例子中,複數個金屬或含金屬部分6可藉由一金屬或含金屬的板體8所支承,且每一個含金屬部分6的一側係耦接於該金屬或含金屬的板體8。在下文中,每一個關於「金屬」或每一個「含金屬」意指包含單一金屬或包括兩個或更多金屬的金屬合金。
在此例子中,板體8包括一支承機構,用於支承鑽石部分4及金屬部分6的交替形態。在此例子中,板體8及金屬部分6係為一由相同材料所形成的整體件的一部分,並包括相鄰的成對金屬部分6之間的通道12。然而,此處描述的金屬板體8和金屬部分6為一個整體件不應被理解為限制性的,因為可以想到的是金屬板體8和金屬部分6可以是單獨的元件。
在此例子中,金屬部分6包括一組為相互間隔的複數個電導體;金屬板體8包括一支承機構,用於支承該組相互間隔的複數個電導體;以及鑽石部分4包括一組複數個電絕緣體,其中在每個成對的該相互間隔的複數個電導體之間係設置於該複數個電絕緣體中的一個電絕緣體,而使該電絕緣體為接觸於該成對的複數個電導體。
在第1A圖所示的示例性複合基材2具有長度X、寬度Y及高度Z。鑽石部分4、金屬部分6及金屬板體8定義一可安裝一個或多個主動元件10的子鑲嵌基底62,以形成如第1A圖所示的完整的複合基材2。
每一個主動元件10可設置於複數個鑽石部分4中的其中之一的一部分、複數個金屬部分6的其中之一的一部分或該二者。舉例來說,每一個主動元件10可具有底層的鑽石部分4的寬度(在X方向上)之內的寬度12(在X方向上)。在另一個例子中,如第1A圖所示,每一個主動元件10可具有一寬度從而使主動元件10設置於複數個鑽石部分4的其中之一的一部分以及複數個金屬部分6的其中之一或其中複數個的(多個)部分。較普遍的是,每個主動元件10可以設置於下述者的其中之一個或二個:一個鑽石部分4的一部分,該部分係為未接觸於複數個金屬部分6中的一個金屬部分6;複數個金屬部分6中的一個的一部分,該部分係為未接觸於複數個鑽石部分4中的至少一個鑽石部分4;或一個或多個鑽石部分4與一個或多個金屬部分6兩個部分的(多個)部分。在第1A圖所示的示例性複合基材2,每一個主動元件10係設置於複數個個鑽石部分4中的一個的一部分以及成對的金屬部分6的複數個部分。然而,第1A圖中所示的每一個主動元件10設置於鑽石部分4與金屬部分6的組合的具體方式不應以限制性的意義來解釋。
在一個例子中,每一個主動元件10可為一具有P-N接面的半導體元件。每一個主動元件10亦可於運作時產生熱。此處描述的每一個具有P-N接面的主動元件10不應以限制性的意義來理解。因為可以想到的是,每個主動元件10也可以是或替代性地包括一個或多個在運作中產生熱的被動元件。
在一個例子中,每一個鑽石部分4可以預先成形,並插入到一通道12中,相鄰的成對金屬部分6之間及金屬板體8的下方部分係界定出該通道12係由。在另一個例子中,所有的鑽石部分4係由本領域中已知的方式而直接成長於每一個通道12,且成對金屬部分6以及金屬板體8的下方部分係界定出該通道12。在一個例子中,所有的鑽石部分4可透過化學氣相沉積而同時沉積在通道12中。
在一個例子中,每一個主動元件10為如第1A圖所示在Y方向發射雷射光的一側射型雷射二極體,或如第1A圖所示在Z方向發射雷射光的一VCSEL。
在一個例子中,鑽石部分4形成為彼此分開的片而被插入到通道12中,一附著劑14(第1B圖)可用於結合每個金剛石部4至金屬部分6,以及金屬板體8的下方部分所界定的通道12。在另一個例子中,每一個鑽石部分4可以摩擦地裝配到對應的通道12。
在一個例子中,每一個主動元件10可經由一層16結合至包含有鑽石部分4和金屬部分6的子鑲嵌基底62的頂部表面,該層16例如是附著劑層,即導電性附著劑。該層16係被專門作為附著劑層,電訊號可以透過主動元件10頂部的接點18-1及18-2而被提供給每一個主動元件10。在一個例子中,多個主動元件10係提供作為單條(第1A圖),每一個主動元件10上的接點18-1及18-2可以分別連接到共用的導電線路20-1及20-2,並可用於藉由第1A圖中所示的單一組的接點18-1及18-2,透過自一外部來源(圖未示)的導體22-1及22-2提供自該外部來源的電訊號至每一個主動元件10。
參考第1C圖及第1D圖,在另一個例子中,導體22-1及22-2係以可耦接至形成於子鑲嵌基底62上的層16的接點24-1及24-2,取代連接導體22-1及22-2至如第1A圖中所示的安裝於子鑲嵌基底62上的主動元件10的暴露(頂部)表面上的接點18-1及18-2以及線路20-1及20-2。在此例子中,層16可由供主動元件10安裝於其上的絕緣材料製成。導電線路26-1及26-2可分別地電耦接接點24-1及24-2至接點28-1及28-2。換句話說,接點28-1及28-2可透過本領域中已知的方式電耦接至在單一個主動元件10或至少一主動元件陣列的主動元件10的表面上的接點30-1及30-2, 例如透過球柵陣列的技術進行覆晶封裝。如第1D圖(仰視圖)所示,線路32-1及32-2可電耦接接點30-1及30-2至主動元件陣列的主動元件10上的其他類似的接點。
本文中所描述的用以耦接外部電訊號至每一個主動元件10的特定方式不應以限制性的意義來理解,因為可以想到的是,任何用於耦接外部電訊號至第1A圖所示的一個或更多個安裝於子鑲嵌基底62的主動元件10的合適的及/或合宜的裝置皆可以被予以使用。
參照第2圖並繼續參考第1A圖至第1D圖,另一個示例性的複合基材2係類似於第1A圖至第1D圖的示例性的複合基材2,但下列情況除外。在第2圖所示的複合基材2,金屬板體8(如第1A圖至第1B圖所示)被省略並且由一金屬背體34或一軸體34替換(如第2圖所示)。在一個例子中,金屬背體34及金屬部分6可為一由相同材料所形成的整體件。然而,此不應以限制性的意義來理解,因為可以想到的是,金屬背體34及金屬部分6可以是各自單獨的元件,並且可以以相同或不同的材料製成。在此例子中,鑽石部分4、金屬部分6及金屬背體34定義一子鑲嵌基底62,並且在這個例子中,加入有主動元件10至此子鑲嵌基底62以定義複合基材2。
在此例子中,金屬部分6包括一組為相互間隔的複數個電導體;金屬背體34包括一支承機構,用於支承該組相互間隔的複數個電導體;以及鑽石部分4包括一組複數個電絕緣體。
除了省略金屬板體8(如第1A圖所示)以及加入金屬背體34(如第2圖所示),第2圖所示的示例性複合基材2與第1A圖至第1D圖所示的示例性複合基材2係相同。因此,第2圖所示的示例性複合基材2的其它細節將在這裡不進行描述以避免不必要的冗文。
此外,本文中關於安裝一個或多個主動元件10至任何示例性的子鑲嵌基底62的方式的細節,以及關於耦接一個或多個主動元件10的導體22-1及22-2至接點18-1及18-2或接點30-1及30-2的方式的細節,將不顯示在第2圖及以下的圖或述於以下本文,以避免不必要的冗文。
參照第3圖並繼續參考第1A圖至第1D圖,另一個第3圖所示的示例性的複合基材2係類似於第1A圖至第1D圖所示的示例性的複合基材2,但下列情況除外。在第3圖所示的示例性複合基材2中,金屬板體8係以設置於鑽石部分4的頂部上取代第1A圖所示的鑽石部分4的下方,以及一個或多個主動元件10係透過層16而安裝於金屬板體8的頂部表面上(參照第3圖)。在此例子中,鑽石部分4、金屬部分6及金屬板體8定義一子鑲嵌基底62。在此例子中,金屬部分6包括一組為相互間隔的複數個電導體;金屬板體8包括一支承機構,用於支承該組相互間隔的複數個電導體;以及鑽石部分4包括一組複數個電絕緣體。除了這些變化,第1A圖及第3圖所示的複合基材2皆相同。
參照第4圖並繼續參照第2圖,第4圖所示的示例性的複合基材2係類似於第2圖所示的示例性的複合基材2,但下列情況除外。第4圖所示的複合基材2包括一不屬於第2圖所示的複合基材2的鑽石板體36。鑽石板體36及鑽石部分4可為一整體件。然而,這不應以限制性的意義來理解。在一個例子中,鑽石部分4及鑽石板體36可被預製為一個整體件,並配合金屬部分6及金屬板體34被製成為一個整體件。在另一個例子中,金屬部分6及金屬板體34被製成為一個整體件,並且鑽石部分4藉由鑽石沉積於相鄰的成對的金屬部分6之間直到相鄰的成對的金屬部分6之間的空間充滿鑽石而成長(例如藉由CVD),由此,鑽石板體36的成長係藉由鑽石連續沉積而發生。應當理解的是,於鑽石部分4及鑽石板體36的成長過程中,鑽石材料係透過CVD而自包括金屬部分6及金屬板體34的整體件的相反於安裝有一個或多個主動元件10的一側沉積。此後,當鑽石部分4和鑽石板體36已沉積,包含有例如鑽石部分4、鑽石板體36、金屬部分6及金屬板體34的子鑲嵌基底62可以被倒轉,並且一個或多個主動元件10可安裝於子鑲嵌基底相反於鑽石板體36的子鑲嵌基底62的一側以形成如第4圖所示的完整的複合基材2。
在此例子中,金屬部分6包括一組為相互間隔的複數個電導體;金屬背體34包括一支承機構,用於支承該組相互間隔的複數個電導體;以及鑽石部分4包括一組複數個電絕緣體。除了加入如第4圖所示的鑽石板體36,第2圖所示的複合基材2與第4圖所示的複合基材2係為相同。鑽石板體36亦包括一電絕緣體。
參照第5圖,另一示例性的複合基材2係類似於第4圖所示的示例性的複合基材2,但下列情況除外。如第5圖所示的複合基材2包括一類似於第3圖所示的金屬板體8的金屬板體8,其介於主動元件10以及鑽石部分4、金屬部份6及金屬背體34之間。第5圖所示的示例性的複合基材2中的鑽石板體36係以如第4圖所示的示例性的複合基材2的鑽石板體36的相同的方式成長。
在此例子中,主動元件10可安裝在由鑽石部分4、金屬部份6、金屬背體34、鑽石板體36及金屬板體8定義的子鑲嵌基底62以形成複合基材2。在此例子中,金屬部分6包括一組為相互間隔的複數個電導體;金屬板體8及金屬背體34包括一支承機構,用於支承該組相互間隔的複數個電導體;以及鑽石部分4包括一組複數個電絕緣體。另外,鑽石板體36亦包括一電絕緣體。
在第1A圖至第5圖所示的每一個複合基材2,每一個鑽石部分4可藉由任何合適的及/或期望的處理,例如CVD,成長於相鄰的成對的金屬部份6之間。如果需要的話,一旦鑽石部分4已成長,鑽石可繼續成長以形成鑽石板體(第4圖及第5圖所示)。選擇性地,鑽石部分4以及在適用情況下的鑽石板體36可被預製為單獨的元件或整體件,並且每一個鑽石部分4可透過一適合的附著劑(如第1B圖所示)或透過摩擦地裝配以插入及固定於一成對的金屬部份6之間。
參考第6圖,另一示例性的複合基材2包括一個或多個主動元件10,該一個或多個主動元件10係設置於金屬板體或金屬層38的頂部上,或者反過來說,係設置於鑽石板體或鑽石層40的頂部表面。一個層16,其如相似於上述的層16,可被用於作為在一個或多個主動元件10與金屬板體或金屬層38之間的界面。在一個例子中,層16可為一附著層。在另一個例子中,層16可為一個或多個主動元件10所固定至的一介電層,並包括複數個接點及/或線路,該複數個接點及/或線路用以透過第1A至第1D圖所述的方式耦接前述的主動元件10至外部電訊號源。在此例中,主動元件10可安裝至鑽石板體40及金屬板體38所定義的子鑲嵌基底62以形成複合基材2。在此例中,鑽石板體40可預先成形並耦接(黏合)至金屬板體38或以任何適合的或期望的方式,例如CVD,成長於金屬板體38上。
參考第7圖,係顯示一示例性的微波電漿CVD系統42,可用於MPCVD以成長第1A圖至第6圖中的任一個實施例的子鑲嵌基底62的鑽石部分4、鑽石板體36及/或鑽石板體40。在使用CVD系統42中,一反應氣體44的混合物例如氫氣和甲烷,可流入一微波電漿CVD反應器46,並且反應氣體44的流速可以藉由質量流量控制器48來控制。廢氣50自CVD反應器46流出,通常流至一真空泵52。微波能量可以由磁控管54產生並透過石英窗56被引導到CVD反應器46。在CVD反應器46的內部,微波能量係轉變成激化反應氣體44中的氫分子形成氫自由基的電漿58,以及反應氣體44中的甲烷分子形成甲基自由基、亞甲基自由基、次甲基自由基以及包括兩個或更多個碳原子的第二級或第三級自由基。在CVD反應器46的底部有一個基底支架60,用以支撐在其上的用於CVD成長鑽石部分4的金屬基底。在一個例子中,這樣的金屬基底可包括金屬部分6以及金屬板體8或金屬背體34的其中一個或二個。在另一個例子中,這樣的金屬基底可包括金屬板體8。
於電漿58運作時,含有碳原子的激化的自由基轟擊金屬基底的表面,導致碳固定並形成鑽石於金屬基底上以形成子鑲嵌基底62,而主動元件10可安裝於上述的子鑲嵌基底62以形成複合基材2。
選擇性地,一光學溫度計64可用來監視鑽石沉積過程中鑽石成長於金屬基底的溫度。利用CVD系統42以藉由微波電漿CVD成長鑽石的技術手段在本領域中是公知的,將不在此進一步進行描述。
實施例1:PCVD鑽石成長於具有溝槽的銅-鎢上
一直徑140毫米的金屬鎢片在CVD反應器46中作為基底支架60。一在X x Y x Z的方向上為8毫米x6毫米x0.4毫米的銅-鎢合金片(大致上是20%銅及80%鎢)放置於基底支架60的上方。在放置於基底支架60之前,該銅-鎢合金片的表面係以鎳層和金層電鍍,並且沿Y方向加工6毫米長度的五個具有100微米深度(Z方向)以及500微米寬度(X方向)的溝槽或通道12。在放置到CVD反應器46以成長鑽石之前,該銅-鎢合金片係經硝酸蝕刻30分鐘,隨後以去離子水予以沖洗和以乙醇予以超聲波洗滌。將該銅-鎢合金片放置於CVD反應器46內部的基底支架60的上方,並使1850毫升/分鐘的氫氣及13.7毫升/分鐘的甲烷的混合物中流入CVD反應器46中。電漿啟動後,調整微波功率及CVD反應器46內的壓力,以使電漿58的漿液覆蓋基底支架60的整個表面。於的鑽石成長於具有溝槽的該銅-鎢合金片上66小時進而形成示例性的子鑲嵌基底62後,將反應停止。
在此生長的例子中,可觀察到鑽石成功地沉積在銅- 鎢合金的表面。更具體而言,可觀察到鑽石一致地沉積到溝槽或通道12以及在相鄰的通道12之間的具有溝槽的該銅-鎢合金的表面上。出現在溝槽中的鑽石晶粒比出現在具有溝槽的該片銅-鎢合金的頂部表面的鑽石晶粒來得更大。在溝槽或通道12中的鑽石厚度可被觀察到為125微米,而在相鄰的通道之間的具有溝槽的該片銅-鎢合金的的頂部表面的鑽石厚度可被觀察到為100微米。
這個示例性的子鑲嵌基底62的100微米厚度的鑽石部分的頂部表面可以選擇性地被予以研磨及拋光以產生一似於第1A圖中所示的子鑲嵌基底62的示例性的子鑲嵌基底62而類子鑲嵌基底。這個示例性的子鑲嵌基底62的金屬或含金屬的板體也可以或選擇性地被予以研磨及拋光到所需的程度。
實施例2:PCVD鑽石成長於平坦的銅-鎢上
一直徑140毫米的金屬鎢片在CVD反應器46中作為基底支架60。一在X x Y x Z的方向上的尺寸為8毫米x6毫米x0.4毫米的銅-鎢合金片(大致上是20%銅及80%鎢)放置於基底支架60上方。該銅-鎢合金片的頂部表面係為平坦的,例如不經鎳及/或金電鍍,並且沒有在這銅-鎢合金片予以加工溝槽。在放置到CVD反應器46以成長鑽石之前,該銅-鎢合金片係經硝酸蝕刻30分鐘,隨後用去離子水予以沖洗和以乙醇予以超音波洗滌。將該銅-鎢合金片放置於CVD反應器46內部的基底支架60的上方,再使2800毫升/分鐘的氫氣及20.72毫升/分鐘的甲烷的混合物中流入CVD反應器46中。電漿啟動後,調整微波功率及CVD反應器46內的壓力,以使電漿58的漿液覆蓋基底支架60的整個表面。於鑽石成長43小時後將反應停止,可觀察到鑽石已經成功地沉積在銅- 鎢合金的表面。一成長的鑽石的掃描式電子顯微影像係顯示鑽石晶體頂部為具有[100]方向的板狀型態(morphology of square top),以及具有200微米的鑽石厚度。
以上之敘述以及說明僅為本發明之較佳實施例之說明,對於此項技術具有通常知識者當可依據以下所界定申請專利範圍以及上述之說明而作其他之修改,惟此些修改仍應是為本發明之發明精神而在本發明之權利範圍中。
10‧‧‧主動元件
12‧‧‧通道
14‧‧‧附著劑
16‧‧‧層
18-1‧‧‧接點
18-2‧‧‧接點
2‧‧‧複合基材
20-1‧‧‧導電線路
20-2‧‧‧導電線路
22-1‧‧‧導體
22-2‧‧‧導體
24-1‧‧‧接點
24-2‧‧‧接點
26-1‧‧‧導電線路
26-2‧‧‧導電線路
28-1‧‧‧接點
28-2‧‧‧接點
30-1‧‧‧接點
30-2‧‧‧接點
32-1‧‧‧線路
32-2‧‧‧線路
34‧‧‧金屬背體/軸體/板體
36‧‧‧鑽石板體
38‧‧‧金屬板體/金屬層
4‧‧‧鑽石的部分、片或片段
40‧‧‧鑽石板體/鑽石層
42‧‧‧微波電漿CVD系統
44‧‧‧反應氣體
46‧‧‧CVD反應器
48‧‧‧質量流量控制器
50‧‧‧廢氣
52‧‧‧真空泵
54‧‧‧磁控管
56‧‧‧石英窗
58‧‧‧電漿
6‧‧‧金屬或含金屬的部分、片或片段
60‧‧‧基底支架
62‧‧‧子鑲嵌基底
64‧‧‧光學溫度計
8‧‧‧金屬板體
X‧‧‧方向
Y‧‧‧方向
Z‧‧‧方向
αActive-Material‧‧‧線膨脹係數
αDia‧‧‧線膨脹係數
αMetal‧‧‧線膨脹係數
第1A圖至第6圖顯示根據本發明的六個不同的實施例的複合基材,包括主動元件安裝於不同實施例的子鑲嵌基底以形成該複合基材;以及 第7圖為顯示根據本發明的實施例的微波電漿化學氣相沉積(microwave plasma chemical vapor deposition,MPCVD)系統之示意圖,其可用於沉積鑽石薄膜於第1A圖至第6圖所示的一個或多個實施例的子鑲嵌基底上。
Claims (20)
- 一種複合基材,包含:一組為相互間隔的複數個電導體,該複數個電導體呈長條狀且具有至少一裸露的長條側表面;一支承機構,用於支承該組相互間隔的複數個電導體;以及一組複數個電絕緣體,其中在每個成對的該相互間隔的複數個電導體之間係設置於該複數個電絕緣體中的一個電絕緣體,而使該電絕緣體為接觸於該成對的複數個電導體,且每個電絕緣體之間為不相接觸,其中該複合基材具有一平面表面,該平面表面由該組複數個電絕緣體及該組為相互間隔的複數個電導體所界定。
- 如請求項1所述之複合基材,更包括至少一個主動元件,係設置於下述者的其中之一個或二個之上方:該複數個電絕緣體中的一個電絕緣體的一部分,該部分係為未接觸於該相互間隔的複數個電導體中的一個電導體;以及該複數個電導體中的一個電導體的一部分,該部分係為未接觸於該複數個電絕緣體中的至少一個電絕緣體。
- 如請求項2所述之複合基材,其中該用於支承該組相互間隔的複數個電導體的支承機構係設置於該主動元件及該複數個電絕緣體中的至少一個電絕緣體之間。
- 如請求項2所述之複合基材,其中該主動元件係為具有至少一個P-N接面的半導體元件。
- 如請求項2所述之複合基材,其中該複合基材的熱膨脹係數相對於該主動元件的熱膨脹係數的比值為0.4至2、或0.5至1.8、或0.6至1.6、或0.7至1.4、或0.8至1.2。
- 如請求項1所述之複合基材,其中每一個該電絕緣體係包含一鑽石。
- 如請求項1所述之複合基材,其中每一個該電導體係包含一金屬或一金屬合金。
- 如請求項7所述之複合基材,其中每一個該電導體係包含一銅-鎢合金。
- 如請求項1所述之複合基材,其中該用於支承該組相互間隔的複數個電導體的支承機構包括以下之一:一軸體或一背體,耦接於每一個該電導體的一端;或一板體,耦接於每一個該電導體的一側。
- 如請求項9所述之複合基材,其中該相互間隔的複數個電導體及該用於支承該組相互間隔的複數個電導體的支承機構係為一由相同材料所形成的整體件。
- 如請求項1所述之複合基材,其中每一個該電絕緣體係為:直接成長於接觸於該電絕緣體的該對電導體;或係為結合於接觸於該電絕緣體的該對電導體;或係為直接接觸於該對電導體。
- 如請求項11所述之複合基材,其中每一個直接成長於接觸於該電絕緣體的該對電導體的該電絕緣體係透過化學氣相沉積成長。
- 如請求項11所述之複合基材,其中每一個結合於接觸於該電絕緣體的該對電導體的該電絕緣體係透過一附著劑結合。
- 如請求項2所述之複合基材,更包括一介電材料,設置於該主動元件與下述者的其中之一個或二個的之間:一個該電絕緣體的該部分;以及一個該電導體的該部分。
- 如請求項14所述之複合基材,更包括設置於該介電材料上的至少一導體,經配置而傳遞電訊號至該主動元件的接點及/或自該主動元件的接點傳遞電訊號。
- 一種複合基材,包含複數個鑽石的部分、片、層或片段以及複數個金屬或含金屬的部分、片、層或片段的交替形態,其中每一個含金屬的部分、片、層或片段具有小於12x10-6m/K、小於11x10-6m/K、小於10x10-6m/K或小於9x10-6m/K的線膨脹係數。
- 如請求項16所述之複合基材,更包括一用於支承該複數個鑽部分、片、層或片段以及複數個金屬或含金屬的部分、片、層或片段的交替形態的支承機構,包括以下其中之一:一軸體或一背體,耦接於每一個含金屬的部分的一端;或一板體,耦接於每一個含金屬的部分的一側。
- 如請求項16所述之複合基材,更包括一個主動元件,係設置於下述者的其中之一個或二個之上方:該複數個鑽部分、片、層或片段的其中之一的一部分;以及該複數個金屬或含金屬的部分、片、層或片段的其中之一的一部分,其中該主動元件包括一P-N接面。
- 如請求項18所述之複合基材,其中該複合基材的熱膨脹係數相對於該主動元件的熱膨脹係數的比值為0.4至2、或0.5至1.8、或0.6至1.6、或0.7至1.4、或0.8至1.2。
- 如請求項18所述之複合基材,其中該複數個鑽部分、片、層或片段以及複數個金屬或含金屬的部分、片、層或片段的交替形態係定義出一子鑲嵌基底,該複合基材更進一步包括:一介電層,設置於該主動元件以及該子鑲嵌基底的至少一部分;以及一導體,形成於該介電層之上,該導體與該主動元件為電連續性的接觸。
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US20160233142A1 (en) | 2016-08-11 |
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CN107534019B (zh) | 2022-02-11 |
CN107534019A (zh) | 2018-01-02 |
GB2550731B (en) | 2021-01-20 |
TW201640630A (zh) | 2016-11-16 |
GB2550731A (en) | 2017-11-29 |
JP2020053686A (ja) | 2020-04-02 |
JP6688802B2 (ja) | 2020-04-28 |
JP2018510499A (ja) | 2018-04-12 |
WO2016126787A1 (en) | 2016-08-11 |
DE112016000634B4 (de) | 2020-10-01 |
US9812375B2 (en) | 2017-11-07 |
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