TWI660017B - 用於鈷化學機械拋光(cmp)之替代氧化劑 - Google Patents

用於鈷化學機械拋光(cmp)之替代氧化劑 Download PDF

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Publication number
TWI660017B
TWI660017B TW106123275A TW106123275A TWI660017B TW I660017 B TWI660017 B TW I660017B TW 106123275 A TW106123275 A TW 106123275A TW 106123275 A TW106123275 A TW 106123275A TW I660017 B TWI660017 B TW I660017B
Authority
TW
Taiwan
Prior art keywords
polishing composition
compound
cobalt
acid
oxidant
Prior art date
Application number
TW106123275A
Other languages
English (en)
Chinese (zh)
Other versions
TW201807119A (zh
Inventor
Steven KRAFT
史蒂芬 卡夫特
Phillip W. Carter
菲利普 Ｗ 卡特
Andrew R. Wolff
安德魯 R 渥夫
Original Assignee
Cabot Microelectronics Corporation
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corporation, 卡博特微電子公司 filed Critical Cabot Microelectronics Corporation
Publication of TW201807119A publication Critical patent/TW201807119A/zh
Application granted granted Critical
Publication of TWI660017B publication Critical patent/TWI660017B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW106123275A 2016-07-14 2017-07-12 用於鈷化學機械拋光(cmp)之替代氧化劑 TWI660017B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662362222P 2016-07-14 2016-07-14
US62/362,222 2016-07-14

Publications (2)

Publication Number Publication Date
TW201807119A TW201807119A (zh) 2018-03-01
TWI660017B true TWI660017B (zh) 2019-05-21

Family

ID=60942463

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106123275A TWI660017B (zh) 2016-07-14 2017-07-12 用於鈷化學機械拋光(cmp)之替代氧化劑

Country Status (7)

Country Link
US (1) US11851584B2 (enExample)
EP (1) EP3484971B1 (enExample)
JP (2) JP7253924B2 (enExample)
KR (3) KR20190018751A (enExample)
CN (1) CN109415599B (enExample)
TW (1) TWI660017B (enExample)
WO (1) WO2018013847A1 (enExample)

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* Cited by examiner, † Cited by third party
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WO2020066786A1 (ja) * 2018-09-28 2020-04-02 花王株式会社 酸化珪素膜用研磨液組成物
JP7326048B2 (ja) * 2018-09-28 2023-08-15 花王株式会社 酸化珪素膜用研磨液組成物
KR20220083728A (ko) * 2019-10-15 2022-06-20 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 연마 조성물 및 이의 사용 방법
JP7803675B2 (ja) * 2020-10-05 2026-01-21 花王株式会社 酸化珪素膜用研磨液組成物

Citations (2)

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TW201343905A (zh) * 2012-02-15 2013-11-01 尖端科技材料公司 利用後段化學機械拋光移除之組成物及其使用方法
TW201603945A (zh) * 2014-07-25 2016-02-01 氣體產品及化學品股份公司 含鈷之基材的化學機械硏磨

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US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
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TW201343905A (zh) * 2012-02-15 2013-11-01 尖端科技材料公司 利用後段化學機械拋光移除之組成物及其使用方法
TW201603945A (zh) * 2014-07-25 2016-02-01 氣體產品及化學品股份公司 含鈷之基材的化學機械硏磨

Also Published As

Publication number Publication date
JP2022097502A (ja) 2022-06-30
US20180016469A1 (en) 2018-01-18
EP3484971A1 (en) 2019-05-22
KR20190018751A (ko) 2019-02-25
JP2019527468A (ja) 2019-09-26
WO2018013847A1 (en) 2018-01-18
JP7253924B2 (ja) 2023-04-07
EP3484971A4 (en) 2020-02-26
KR20250005498A (ko) 2025-01-09
CN109415599B (zh) 2022-09-27
CN109415599A (zh) 2019-03-01
US11851584B2 (en) 2023-12-26
KR20230014887A (ko) 2023-01-30
TW201807119A (zh) 2018-03-01
EP3484971B1 (en) 2025-08-27

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