CN109415599B - 用于钴化学机械抛光的替代性氧化剂 - Google Patents

用于钴化学机械抛光的替代性氧化剂 Download PDF

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Publication number
CN109415599B
CN109415599B CN201780041554.8A CN201780041554A CN109415599B CN 109415599 B CN109415599 B CN 109415599B CN 201780041554 A CN201780041554 A CN 201780041554A CN 109415599 B CN109415599 B CN 109415599B
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CN
China
Prior art keywords
polishing composition
cobalt
polishing
substrate
oxidizing agent
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CN201780041554.8A
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English (en)
Chinese (zh)
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CN109415599A (zh
Inventor
S.克拉夫特
P.W.卡特
A.R.沃尔夫
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CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
CMC Materials LLC
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Publication of CN109415599A publication Critical patent/CN109415599A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201780041554.8A 2016-07-14 2017-07-13 用于钴化学机械抛光的替代性氧化剂 Active CN109415599B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662362222P 2016-07-14 2016-07-14
US62/362,222 2016-07-14
PCT/US2017/041988 WO2018013847A1 (en) 2016-07-14 2017-07-13 Alternative oxidizing agents for cobalt cmp

Publications (2)

Publication Number Publication Date
CN109415599A CN109415599A (zh) 2019-03-01
CN109415599B true CN109415599B (zh) 2022-09-27

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Family Applications (1)

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CN201780041554.8A Active CN109415599B (zh) 2016-07-14 2017-07-13 用于钴化学机械抛光的替代性氧化剂

Country Status (7)

Country Link
US (1) US11851584B2 (enExample)
EP (1) EP3484971B1 (enExample)
JP (2) JP7253924B2 (enExample)
KR (3) KR20190018751A (enExample)
CN (1) CN109415599B (enExample)
TW (1) TWI660017B (enExample)
WO (1) WO2018013847A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
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US11814547B2 (en) * 2018-09-28 2023-11-14 Kao Corporation Polishing liquid composition for silicon oxide film
JP7326048B2 (ja) * 2018-09-28 2023-08-15 花王株式会社 酸化珪素膜用研磨液組成物
KR20220083728A (ko) * 2019-10-15 2022-06-20 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 연마 조성물 및 이의 사용 방법
JP2022061016A (ja) * 2020-10-05 2022-04-15 花王株式会社 酸化珪素膜用研磨液組成物

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CN104508072A (zh) * 2012-02-15 2015-04-08 安格斯公司 用于cmp后去除的组合物及使用方法
WO2016065060A1 (en) * 2014-10-21 2016-04-28 Cabot Microelectronics Corporation Cobalt polishing accelerators

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US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
JP3507628B2 (ja) * 1996-08-06 2004-03-15 昭和電工株式会社 化学的機械研磨用研磨組成物
MY144587A (en) * 2001-06-21 2011-10-14 Kao Corp Polishing composition
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CN104508072A (zh) * 2012-02-15 2015-04-08 安格斯公司 用于cmp后去除的组合物及使用方法
WO2016065060A1 (en) * 2014-10-21 2016-04-28 Cabot Microelectronics Corporation Cobalt polishing accelerators

Also Published As

Publication number Publication date
KR20250005498A (ko) 2025-01-09
JP2022097502A (ja) 2022-06-30
KR20230014887A (ko) 2023-01-30
EP3484971B1 (en) 2025-08-27
EP3484971A4 (en) 2020-02-26
JP2019527468A (ja) 2019-09-26
CN109415599A (zh) 2019-03-01
US20180016469A1 (en) 2018-01-18
WO2018013847A1 (en) 2018-01-18
TWI660017B (zh) 2019-05-21
TW201807119A (zh) 2018-03-01
EP3484971A1 (en) 2019-05-22
KR20190018751A (ko) 2019-02-25
JP7253924B2 (ja) 2023-04-07
US11851584B2 (en) 2023-12-26

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