KR20190018751A - 코발트 cmp를 위한 대체 산화제 - Google Patents

코발트 cmp를 위한 대체 산화제 Download PDF

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Publication number
KR20190018751A
KR20190018751A KR1020197004126A KR20197004126A KR20190018751A KR 20190018751 A KR20190018751 A KR 20190018751A KR 1020197004126 A KR1020197004126 A KR 1020197004126A KR 20197004126 A KR20197004126 A KR 20197004126A KR 20190018751 A KR20190018751 A KR 20190018751A
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KR
South Korea
Prior art keywords
polishing composition
compound
cobalt
acid
oxidizing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020197004126A
Other languages
English (en)
Korean (ko)
Inventor
스티븐 크래프트
필립 더블유 카터
앤드류 알 울프
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐보트 마이크로일렉트로닉스 코포레이션 filed Critical 캐보트 마이크로일렉트로닉스 코포레이션
Priority to KR1020237002200A priority Critical patent/KR20230014887A/ko
Priority to KR1020247040827A priority patent/KR20250005498A/ko
Publication of KR20190018751A publication Critical patent/KR20190018751A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020197004126A 2016-07-14 2017-07-13 코발트 cmp를 위한 대체 산화제 Ceased KR20190018751A (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020237002200A KR20230014887A (ko) 2016-07-14 2017-07-13 코발트 cmp를 위한 대체 산화제
KR1020247040827A KR20250005498A (ko) 2016-07-14 2017-07-13 코발트 cmp를 위한 대체 산화제

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662362222P 2016-07-14 2016-07-14
US62/362,222 2016-07-14
PCT/US2017/041988 WO2018013847A1 (en) 2016-07-14 2017-07-13 Alternative oxidizing agents for cobalt cmp

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR1020247040827A Division KR20250005498A (ko) 2016-07-14 2017-07-13 코발트 cmp를 위한 대체 산화제
KR1020237002200A Division KR20230014887A (ko) 2016-07-14 2017-07-13 코발트 cmp를 위한 대체 산화제

Publications (1)

Publication Number Publication Date
KR20190018751A true KR20190018751A (ko) 2019-02-25

Family

ID=60942463

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020197004126A Ceased KR20190018751A (ko) 2016-07-14 2017-07-13 코발트 cmp를 위한 대체 산화제
KR1020247040827A Pending KR20250005498A (ko) 2016-07-14 2017-07-13 코발트 cmp를 위한 대체 산화제
KR1020237002200A Ceased KR20230014887A (ko) 2016-07-14 2017-07-13 코발트 cmp를 위한 대체 산화제

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020247040827A Pending KR20250005498A (ko) 2016-07-14 2017-07-13 코발트 cmp를 위한 대체 산화제
KR1020237002200A Ceased KR20230014887A (ko) 2016-07-14 2017-07-13 코발트 cmp를 위한 대체 산화제

Country Status (7)

Country Link
US (1) US11851584B2 (enExample)
EP (1) EP3484971B1 (enExample)
JP (2) JP7253924B2 (enExample)
KR (3) KR20190018751A (enExample)
CN (1) CN109415599B (enExample)
TW (1) TWI660017B (enExample)
WO (1) WO2018013847A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11814547B2 (en) * 2018-09-28 2023-11-14 Kao Corporation Polishing liquid composition for silicon oxide film
JP7326048B2 (ja) * 2018-09-28 2023-08-15 花王株式会社 酸化珪素膜用研磨液組成物
KR20220083728A (ko) * 2019-10-15 2022-06-20 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 연마 조성물 및 이의 사용 방법
JP2022061016A (ja) * 2020-10-05 2022-04-15 花王株式会社 酸化珪素膜用研磨液組成物

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US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
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Also Published As

Publication number Publication date
KR20250005498A (ko) 2025-01-09
JP2022097502A (ja) 2022-06-30
KR20230014887A (ko) 2023-01-30
CN109415599B (zh) 2022-09-27
EP3484971B1 (en) 2025-08-27
EP3484971A4 (en) 2020-02-26
JP2019527468A (ja) 2019-09-26
CN109415599A (zh) 2019-03-01
US20180016469A1 (en) 2018-01-18
WO2018013847A1 (en) 2018-01-18
TWI660017B (zh) 2019-05-21
TW201807119A (zh) 2018-03-01
EP3484971A1 (en) 2019-05-22
JP7253924B2 (ja) 2023-04-07
US11851584B2 (en) 2023-12-26

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