TWI657242B - 圖案檢查方法及圖案檢查裝置 - Google Patents
圖案檢查方法及圖案檢查裝置 Download PDFInfo
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- TWI657242B TWI657242B TW105130851A TW105130851A TWI657242B TW I657242 B TWI657242 B TW I657242B TW 105130851 A TW105130851 A TW 105130851A TW 105130851 A TW105130851 A TW 105130851A TW I657242 B TWI657242 B TW I657242B
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- 238000007689 inspection Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 238000001514 detection method Methods 0.000 claims abstract description 26
- 238000012937 correction Methods 0.000 claims description 145
- 230000007547 defect Effects 0.000 claims description 30
- 238000010894 electron beam technology Methods 0.000 claims description 29
- 238000012545 processing Methods 0.000 claims description 16
- 238000005259 measurement Methods 0.000 description 51
- 230000003287 optical effect Effects 0.000 description 14
- 238000013461 design Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 238000004364 calculation method Methods 0.000 description 8
- 238000005286 illumination Methods 0.000 description 8
- 239000002131 composite material Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
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- 238000006243 chemical reaction Methods 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical or photographic arrangements associated with the tube
- H01J37/222—Image processing arrangements associated with the tube
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T5/00—Image enhancement or restoration
- G06T5/70—Denoising; Smoothing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/10—Image acquisition modality
- G06T2207/10056—Microscopic image
- G06T2207/10061—Microscopic image from scanning electron microscope
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/282—Determination of microscope properties
- H01J2237/2826—Calibration
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015211998A JP6546509B2 (ja) | 2015-10-28 | 2015-10-28 | パターン検査方法及びパターン検査装置 |
| JP2015-211998 | 2015-10-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201727223A TW201727223A (zh) | 2017-08-01 |
| TWI657242B true TWI657242B (zh) | 2019-04-21 |
Family
ID=58634491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105130851A TWI657242B (zh) | 2015-10-28 | 2016-09-23 | 圖案檢查方法及圖案檢查裝置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10281415B2 (ko) |
| JP (1) | JP6546509B2 (ko) |
| KR (1) | KR101855928B1 (ko) |
| TW (1) | TWI657242B (ko) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI581213B (zh) * | 2015-12-28 | 2017-05-01 | 力晶科技股份有限公司 | 物品缺陷檢測方法、影像處理系統與電腦可讀取記錄媒體 |
| JP7078632B2 (ja) * | 2017-01-09 | 2022-05-31 | ティーイーエル エピオン インコーポレイテッド | 補償位置特定処理装置および方法 |
| JP6588675B2 (ja) * | 2017-03-10 | 2019-10-09 | 富士フイルム株式会社 | 画像処理システム、画像処理装置、画像処理方法及び画像処理プログラム |
| JP6869815B2 (ja) * | 2017-06-06 | 2021-05-12 | 株式会社ニューフレアテクノロジー | 検査方法および検査装置 |
| JP6981811B2 (ja) * | 2017-08-25 | 2021-12-17 | 株式会社ニューフレアテクノロジー | パターン検査装置及びパターン検査方法 |
| US11353798B2 (en) | 2017-10-13 | 2022-06-07 | Hitachi High-Technologies Corporation | Pattern measurement device and pattern measurement method |
| JP2019120654A (ja) * | 2018-01-11 | 2019-07-22 | 株式会社ニューフレアテクノロジー | 検査方法 |
| JP7030566B2 (ja) * | 2018-03-06 | 2022-03-07 | 株式会社ニューフレアテクノロジー | パターン検査方法及びパターン検査装置 |
| JP7094782B2 (ja) * | 2018-06-01 | 2022-07-04 | 株式会社ニューフレアテクノロジー | 電子ビーム検査装置及び電子ビーム検査方法 |
| EP3594750A1 (en) * | 2018-07-10 | 2020-01-15 | ASML Netherlands B.V. | Hidden defect detection and epe estimation based on the extracted 3d information from e-beam images |
| CN109001958B (zh) * | 2018-08-03 | 2021-08-20 | 德淮半导体有限公司 | 解决版图图形偏离栅格线的修正方法 |
| KR20200044252A (ko) * | 2018-10-18 | 2020-04-29 | 삼성디스플레이 주식회사 | 표시 패널 검사 시스템, 표시 패널 검사 방법 및 이를 이용한 표시 패널. |
| JP7215882B2 (ja) * | 2018-11-15 | 2023-01-31 | 株式会社ニューフレアテクノロジー | パターン検査装置及びパターン検査方法 |
| JP7171378B2 (ja) * | 2018-11-15 | 2022-11-15 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム検査装置及びマルチ電子ビーム検査方法 |
| JP7241570B2 (ja) * | 2019-03-06 | 2023-03-17 | 株式会社ニューフレアテクノロジー | マルチ電子ビーム検査装置及びマルチ電子ビーム検査方法 |
| KR102220194B1 (ko) * | 2019-08-20 | 2021-02-25 | 주식회사 커미조아 | 보정용 패널, 패널검사용 보정장치 및 패널 검사장치의 보정방법 |
| WO2021140035A1 (en) | 2020-01-06 | 2021-07-15 | Asml Netherlands B.V. | Charged particle assessment tool, inspection method |
| JP2021183942A (ja) | 2020-05-22 | 2021-12-02 | 株式会社ニューフレアテクノロジー | パターン検査装置及びパターン検査方法 |
| US11798138B2 (en) * | 2020-07-07 | 2023-10-24 | Applied Materials Israel Ltd. | Reconstruction of a distorted image of an array of structural elements of a specimen |
| JP2022016780A (ja) * | 2020-07-13 | 2022-01-25 | 株式会社ニューフレアテクノロジー | パターン検査装置及びパターン検査方法 |
| KR20220079123A (ko) * | 2020-12-04 | 2022-06-13 | 삼성전자주식회사 | 이미지 장치 및 이미지 장치의 동작 방법 |
| JP2022109735A (ja) | 2021-01-15 | 2022-07-28 | キオクシア株式会社 | 検査装置および検査方法 |
| WO2023147941A1 (en) * | 2022-02-03 | 2023-08-10 | Carl Zeiss Multisem Gmbh | Method for determining a distortion-corrected position of a feature in an image imaged with a multi-beam charged particle microscope, corresponding computer program product and multi-beam charged particle microscope |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11194154A (ja) * | 1998-01-06 | 1999-07-21 | Hitachi Ltd | パターン検査方法およびその装置並びに電子線画像に基づくパターン検査方法およびその装置 |
| JP2011155119A (ja) * | 2010-01-27 | 2011-08-11 | Hitachi High-Technologies Corp | 検査装置及び検査方法 |
| TW201132968A (en) * | 2009-08-12 | 2011-10-01 | Hermes Microvision Inc | Charged particle beam inspection method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6587581B1 (en) * | 1997-01-10 | 2003-07-01 | Hitachi, Ltd. | Visual inspection method and apparatus therefor |
| KR100620452B1 (ko) * | 2004-08-09 | 2006-09-08 | 삼성전자주식회사 | 이미지 프로세싱 방법 |
| JP5502569B2 (ja) | 2010-04-06 | 2014-05-28 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
| JP5684628B2 (ja) | 2011-03-31 | 2015-03-18 | 株式会社ニューフレアテクノロジー | パターン検査装置及びパターン検査方法 |
| US9040910B2 (en) * | 2013-05-23 | 2015-05-26 | Tao Luo | Multi-column electron beam inspection that uses custom printing methods |
| US9552961B2 (en) * | 2015-04-10 | 2017-01-24 | International Business Machines Corporation | Scanning transmission electron microscope having multiple beams and post-detection image correction |
-
2015
- 2015-10-28 JP JP2015211998A patent/JP6546509B2/ja active Active
-
2016
- 2016-09-23 TW TW105130851A patent/TWI657242B/zh active
- 2016-09-23 US US15/274,413 patent/US10281415B2/en active Active
- 2016-10-28 KR KR1020160141939A patent/KR101855928B1/ko active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11194154A (ja) * | 1998-01-06 | 1999-07-21 | Hitachi Ltd | パターン検査方法およびその装置並びに電子線画像に基づくパターン検査方法およびその装置 |
| TW201132968A (en) * | 2009-08-12 | 2011-10-01 | Hermes Microvision Inc | Charged particle beam inspection method |
| JP2011155119A (ja) * | 2010-01-27 | 2011-08-11 | Hitachi High-Technologies Corp | 検査装置及び検査方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6546509B2 (ja) | 2019-07-17 |
| KR20170049457A (ko) | 2017-05-10 |
| TW201727223A (zh) | 2017-08-01 |
| US20170122890A1 (en) | 2017-05-04 |
| KR101855928B1 (ko) | 2018-05-09 |
| US10281415B2 (en) | 2019-05-07 |
| JP2017083301A (ja) | 2017-05-18 |
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