TWI656410B - 曝光裝置、曝光方法、及物品的製造方法 - Google Patents
曝光裝置、曝光方法、及物品的製造方法 Download PDFInfo
- Publication number
- TWI656410B TWI656410B TW105133072A TW105133072A TWI656410B TW I656410 B TWI656410 B TW I656410B TW 105133072 A TW105133072 A TW 105133072A TW 105133072 A TW105133072 A TW 105133072A TW I656410 B TWI656410 B TW I656410B
- Authority
- TW
- Taiwan
- Prior art keywords
- wavelength
- shift mask
- phase shift
- optical system
- projection optical
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000003287 optical effect Effects 0.000 claims abstract description 104
- 230000010363 phase shift Effects 0.000 claims abstract description 84
- 238000005286 illumination Methods 0.000 claims abstract description 71
- 230000008859 change Effects 0.000 claims abstract description 57
- 230000004075 alteration Effects 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000001228 spectrum Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 2
- 230000005499 meniscus Effects 0.000 claims description 2
- 238000004904 shortening Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 6
- 238000012937 correction Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000005577 local transmission Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- WVWBIKZXCXPPIR-UHFFFAOYSA-M N.[O-2].[OH-].O.[Cr+3] Chemical compound N.[O-2].[OH-].O.[Cr+3] WVWBIKZXCXPPIR-UHFFFAOYSA-M 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015245648A JP6674250B2 (ja) | 2015-12-16 | 2015-12-16 | 露光装置、露光方法、および物品の製造方法 |
| JP2015-245648 | 2015-12-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201732441A TW201732441A (zh) | 2017-09-16 |
| TWI656410B true TWI656410B (zh) | 2019-04-11 |
Family
ID=59079685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105133072A TWI656410B (zh) | 2015-12-16 | 2016-10-13 | 曝光裝置、曝光方法、及物品的製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6674250B2 (ko) |
| KR (1) | KR102130481B1 (ko) |
| CN (1) | CN106886131B (ko) |
| TW (1) | TWI656410B (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109240044B (zh) * | 2018-10-10 | 2020-09-18 | 德淮半导体有限公司 | 曝光系统及减小曝光过程中掩膜板三维效应的方法 |
| US20210349404A1 (en) * | 2018-10-19 | 2021-11-11 | Asml Netherlands B.V. | Method to create the ideal source spectra with source and mask optimization |
| JP7390804B2 (ja) * | 2019-05-17 | 2023-12-04 | キヤノン株式会社 | 露光装置、露光方法、決定方法および物品製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200951640A (en) * | 2008-04-30 | 2009-12-16 | Nikon Corp | Exposure apparatus, exposure method, and device manufacturing method |
| TW201530266A (zh) * | 2003-05-28 | 2015-08-01 | 尼康股份有限公司 | 曝光方法及曝光裝置、以及元件製造方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2723405B2 (ja) * | 1991-11-12 | 1998-03-09 | 松下電器産業株式会社 | 微細電極の形成方法 |
| JP3259347B2 (ja) * | 1992-09-11 | 2002-02-25 | 株式会社ニコン | 投影露光方法及び装置、並びに半導体素子の製造方法 |
| JPH07220988A (ja) * | 1994-01-27 | 1995-08-18 | Canon Inc | 投影露光方法及び装置及びこれを用いたデバイス製造方法 |
| JPH1022198A (ja) * | 1996-07-04 | 1998-01-23 | Hitachi Ltd | 露光方法および光露光装置 |
| JP3080024B2 (ja) * | 1997-02-20 | 2000-08-21 | 日本電気株式会社 | 露光方法および球面収差量の測定方法 |
| US6096457A (en) * | 1998-02-27 | 2000-08-01 | Micron Technology, Inc. | Method for optimizing printing of a phase shift mask having a phase shift error |
| JP4436029B2 (ja) * | 2001-02-13 | 2010-03-24 | 株式会社ニコン | 投影光学系の製造方法及び調整方法、露光装置及びその製造方法、デバイス製造方法、並びにコンピュータシステム |
| JP2002329651A (ja) * | 2001-04-27 | 2002-11-15 | Nikon Corp | 露光装置、露光装置の製造方法、及びマイクロデバイスの製造方法 |
| JP2004205874A (ja) * | 2002-12-26 | 2004-07-22 | Matsushita Electric Ind Co Ltd | マスクおよび半導体装置の製造方法 |
| JP2006080454A (ja) * | 2004-09-13 | 2006-03-23 | Renesas Technology Corp | パターン形成方法 |
| US7580113B2 (en) * | 2006-06-23 | 2009-08-25 | Asml Netherlands B.V. | Method of reducing a wave front aberration, and computer program product |
| CN100470377C (zh) * | 2007-08-22 | 2009-03-18 | 中国科学院上海光学精密机械研究所 | 光刻机投影物镜彗差原位检测系统及检测方法 |
| JP5201979B2 (ja) * | 2007-12-26 | 2013-06-05 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
| KR101898921B1 (ko) * | 2011-11-16 | 2018-09-17 | 삼성디스플레이 주식회사 | 노광 시스템 이를 이용한 패턴 형성 방법 및 표시 기판의 제조 방법 |
| JP2014135368A (ja) * | 2013-01-09 | 2014-07-24 | Canon Inc | 露光装置、計測方法及びデバイスの製造方法 |
-
2015
- 2015-12-16 JP JP2015245648A patent/JP6674250B2/ja active Active
-
2016
- 2016-10-13 TW TW105133072A patent/TWI656410B/zh active
- 2016-12-07 KR KR1020160165530A patent/KR102130481B1/ko active IP Right Grant
- 2016-12-13 CN CN201611142628.0A patent/CN106886131B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201530266A (zh) * | 2003-05-28 | 2015-08-01 | 尼康股份有限公司 | 曝光方法及曝光裝置、以及元件製造方法 |
| TW200951640A (en) * | 2008-04-30 | 2009-12-16 | Nikon Corp | Exposure apparatus, exposure method, and device manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201732441A (zh) | 2017-09-16 |
| CN106886131B (zh) | 2019-05-14 |
| KR102130481B1 (ko) | 2020-07-06 |
| CN106886131A (zh) | 2017-06-23 |
| JP2017111311A (ja) | 2017-06-22 |
| KR20170072128A (ko) | 2017-06-26 |
| JP6674250B2 (ja) | 2020-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008171960A (ja) | 位置検出装置及び露光装置 | |
| US20090190118A1 (en) | Exposure apparatus inspection mask, and method of inspecting exposure apparatus using exposure apparatus inspection mask | |
| US9891525B2 (en) | Exposure method, exposure apparatus, and article manufacturing method | |
| TWI656410B (zh) | 曝光裝置、曝光方法、及物品的製造方法 | |
| JP4455129B2 (ja) | 収差計測方法及びそれを用いた投影露光装置 | |
| TW200809919A (en) | Exposure apparatus | |
| JP4005881B2 (ja) | 露光装置の検査方法 | |
| US8345221B2 (en) | Aberration measurement method, exposure apparatus, and device manufacturing method | |
| US7499179B2 (en) | Measurement method and apparatus, exposure apparatus, exposure method, and adjusting method | |
| JP7054365B2 (ja) | 評価方法、露光方法、および物品製造方法 | |
| KR20160021388A (ko) | 마스크리스 노광 방법 및 이를 수행하기 위한 마스크리스 노광 장치 | |
| JPH11297615A (ja) | 投影露光装置および該装置を用いた半導体デバイスの製造方法 | |
| JP2003318090A (ja) | 投影光学系の敏感度計測方法、及びそれを有する投影露光装置 | |
| JPH06120116A (ja) | ベストフォーカス計測方法 | |
| JP3313932B2 (ja) | 投影露光装置 | |
| JPH09326343A (ja) | 露光方法及び装置 | |
| TWI851886B (zh) | 曝光裝置、曝光方法及物品之製造方法 | |
| CN111324016B (zh) | 曝光装置、曝光方法以及物品的制造方法 | |
| TWI695231B (zh) | 曝光裝置和物品製造方法 | |
| TW200937495A (en) | Exposure apparatus and device manufacturing method | |
| JP2001284221A (ja) | 投影光学系及び投影露光方法 | |
| TW202144928A (zh) | 曝光裝置、曝光方法及物品之製造方法 | |
| KR20210103948A (ko) | 결정방법, 노광장치, 노광방법, 물품의 제조방법 및 기억매체 | |
| JP2021018358A (ja) | 生成方法、情報処理装置、露光方法、露光装置、物品の製造方法及びプログラム | |
| JP2000100713A (ja) | 被露光基板、露光装置、露光方法、及びデバイスの製造方法 |