TWI654662B - 曝光裝置及物品之製造方法 - Google Patents
曝光裝置及物品之製造方法Info
- Publication number
- TWI654662B TWI654662B TW106134495A TW106134495A TWI654662B TW I654662 B TWI654662 B TW I654662B TW 106134495 A TW106134495 A TW 106134495A TW 106134495 A TW106134495 A TW 106134495A TW I654662 B TWI654662 B TW I654662B
- Authority
- TW
- Taiwan
- Prior art keywords
- optical element
- astigmatism
- optical system
- projection optical
- gas
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 152
- 201000009310 astigmatism Diseases 0.000 claims abstract description 88
- 238000009826 distribution Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 230000008859 change Effects 0.000 claims abstract description 14
- 210000001747 pupil Anatomy 0.000 claims abstract description 13
- 230000007423 decrease Effects 0.000 claims abstract description 4
- 238000005259 measurement Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 75
- 230000005499 meniscus Effects 0.000 description 42
- 230000004075 alteration Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 8
- 238000004080 punching Methods 0.000 description 8
- 230000001186 cumulative effect Effects 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 238000005286 illumination Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000012937 correction Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lens Barrels (AREA)
- Lenses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016233244A JP6896404B2 (ja) | 2016-11-30 | 2016-11-30 | 露光装置及び物品の製造方法 |
| JP2016-233244 | 2016-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201822249A TW201822249A (zh) | 2018-06-16 |
| TWI654662B true TWI654662B (zh) | 2019-03-21 |
Family
ID=62227916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106134495A TWI654662B (zh) | 2016-11-30 | 2017-10-06 | 曝光裝置及物品之製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6896404B2 (enrdf_load_stackoverflow) |
| KR (1) | KR102234255B1 (enrdf_load_stackoverflow) |
| CN (1) | CN108121170B (enrdf_load_stackoverflow) |
| TW (1) | TWI654662B (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7116669B2 (ja) * | 2018-11-22 | 2022-08-10 | サンアプロ株式会社 | 光酸発生剤及びフォトリソグラフィー用樹脂組成物 |
| JP7278137B2 (ja) * | 2019-04-18 | 2023-05-19 | キヤノン株式会社 | ステージ装置、リソグラフィ装置、および物品の製造方法 |
| US11474439B2 (en) * | 2019-06-25 | 2022-10-18 | Canon Kabushiki Kaisha | Exposure apparatus, exposure method, and method of manufacturing article |
| JP6951498B2 (ja) * | 2019-06-25 | 2021-10-20 | キヤノン株式会社 | 露光装置、露光方法および物品製造方法 |
| JP7358106B2 (ja) * | 2019-07-31 | 2023-10-10 | キヤノン株式会社 | 光学装置、投影光学系、露光装置及び物品の製造方法 |
| JP7427461B2 (ja) * | 2020-02-06 | 2024-02-05 | キヤノン株式会社 | 露光装置、及び物品の製造方法 |
| JP2024043177A (ja) * | 2022-09-16 | 2024-03-29 | 株式会社Ｓｃｒｅｅｎホールディングス | 光学装置、露光装置および露光方法 |
| JP2024089178A (ja) * | 2022-12-21 | 2024-07-03 | キオクシア株式会社 | 露光装置、露光方法、及び半導体装置の製造方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1027743A (ja) * | 1996-07-11 | 1998-01-27 | Canon Inc | 投影露光装置、デバイス製造方法及び収差補正光学系 |
| US6411426B1 (en) * | 2000-04-25 | 2002-06-25 | Asml, Us, Inc. | Apparatus, system, and method for active compensation of aberrations in an optical system |
| US7158215B2 (en) * | 2003-06-30 | 2007-01-02 | Asml Holding N.V. | Large field of view protection optical system with aberration correctability for flat panel displays |
| JPWO2007091463A1 (ja) * | 2006-02-07 | 2009-07-02 | 株式会社ニコン | 反射屈折結像光学系、露光装置、およびデバイス製造方法 |
| KR20080046765A (ko) * | 2006-11-23 | 2008-05-28 | 삼성전자주식회사 | 반도체 노광설비에서의 광학 시스템 |
| JP2008292801A (ja) * | 2007-05-25 | 2008-12-04 | Canon Inc | 露光装置および方法 |
| JP5398185B2 (ja) * | 2008-07-09 | 2014-01-29 | キヤノン株式会社 | 投影光学系、露光装置およびデバイス製造方法 |
| JP5595001B2 (ja) * | 2009-10-06 | 2014-09-24 | キヤノン株式会社 | 投影光学系、露光装置及びデバイス製造方法 |
| JP5595015B2 (ja) * | 2009-11-16 | 2014-09-24 | キヤノン株式会社 | 投影光学系、露光装置およびデバイス製造方法 |
| JP6041541B2 (ja) * | 2012-06-04 | 2016-12-07 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
| JP2013251482A (ja) * | 2012-06-04 | 2013-12-12 | Canon Inc | 露光装置、露光装置の調整方法、それを用いたデバイスの製造方法 |
| JP6463087B2 (ja) * | 2014-11-14 | 2019-01-30 | キヤノン株式会社 | 露光装置、および物品の製造方法 |
| JP6748482B2 (ja) * | 2016-05-25 | 2020-09-02 | キヤノン株式会社 | 露光装置、および、物品の製造方法 |
-
2016
- 2016-11-30 JP JP2016233244A patent/JP6896404B2/ja active Active
-
2017
- 2017-10-06 TW TW106134495A patent/TWI654662B/zh active
- 2017-11-24 KR KR1020170157858A patent/KR102234255B1/ko active Active
- 2017-11-27 CN CN201711200000.6A patent/CN108121170B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6896404B2 (ja) | 2021-06-30 |
| CN108121170A (zh) | 2018-06-05 |
| TW201822249A (zh) | 2018-06-16 |
| KR20180062370A (ko) | 2018-06-08 |
| CN108121170B (zh) | 2020-06-26 |
| JP2018091919A (ja) | 2018-06-14 |
| KR102234255B1 (ko) | 2021-04-01 |
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