JP6896404B2 - 露光装置及び物品の製造方法 - Google Patents

露光装置及び物品の製造方法 Download PDF

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Publication number
JP6896404B2
JP6896404B2 JP2016233244A JP2016233244A JP6896404B2 JP 6896404 B2 JP6896404 B2 JP 6896404B2 JP 2016233244 A JP2016233244 A JP 2016233244A JP 2016233244 A JP2016233244 A JP 2016233244A JP 6896404 B2 JP6896404 B2 JP 6896404B2
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Japan
Prior art keywords
optical element
astigmatism
exposure apparatus
optical system
projection optical
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JP2016233244A
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English (en)
Japanese (ja)
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JP2018091919A5 (enrdf_load_stackoverflow
JP2018091919A (ja
Inventor
猛 中嶋
猛 中嶋
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2016233244A priority Critical patent/JP6896404B2/ja
Priority to TW106134495A priority patent/TWI654662B/zh
Priority to KR1020170157858A priority patent/KR102234255B1/ko
Priority to CN201711200000.6A priority patent/CN108121170B/zh
Publication of JP2018091919A publication Critical patent/JP2018091919A/ja
Publication of JP2018091919A5 publication Critical patent/JP2018091919A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lens Barrels (AREA)
  • Lenses (AREA)
JP2016233244A 2016-11-30 2016-11-30 露光装置及び物品の製造方法 Active JP6896404B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016233244A JP6896404B2 (ja) 2016-11-30 2016-11-30 露光装置及び物品の製造方法
TW106134495A TWI654662B (zh) 2016-11-30 2017-10-06 曝光裝置及物品之製造方法
KR1020170157858A KR102234255B1 (ko) 2016-11-30 2017-11-24 노광 장치 및 물품의 제조 방법
CN201711200000.6A CN108121170B (zh) 2016-11-30 2017-11-27 曝光装置以及物品的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016233244A JP6896404B2 (ja) 2016-11-30 2016-11-30 露光装置及び物品の製造方法

Publications (3)

Publication Number Publication Date
JP2018091919A JP2018091919A (ja) 2018-06-14
JP2018091919A5 JP2018091919A5 (enrdf_load_stackoverflow) 2019-12-26
JP6896404B2 true JP6896404B2 (ja) 2021-06-30

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ID=62227916

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JP2016233244A Active JP6896404B2 (ja) 2016-11-30 2016-11-30 露光装置及び物品の製造方法

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JP (1) JP6896404B2 (enrdf_load_stackoverflow)
KR (1) KR102234255B1 (enrdf_load_stackoverflow)
CN (1) CN108121170B (enrdf_load_stackoverflow)
TW (1) TWI654662B (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7116669B2 (ja) * 2018-11-22 2022-08-10 サンアプロ株式会社 光酸発生剤及びフォトリソグラフィー用樹脂組成物
JP7278137B2 (ja) * 2019-04-18 2023-05-19 キヤノン株式会社 ステージ装置、リソグラフィ装置、および物品の製造方法
US11474439B2 (en) * 2019-06-25 2022-10-18 Canon Kabushiki Kaisha Exposure apparatus, exposure method, and method of manufacturing article
JP6951498B2 (ja) * 2019-06-25 2021-10-20 キヤノン株式会社 露光装置、露光方法および物品製造方法
JP7358106B2 (ja) * 2019-07-31 2023-10-10 キヤノン株式会社 光学装置、投影光学系、露光装置及び物品の製造方法
JP7427461B2 (ja) * 2020-02-06 2024-02-05 キヤノン株式会社 露光装置、及び物品の製造方法
JP2024043177A (ja) * 2022-09-16 2024-03-29 株式会社Ｓｃｒｅｅｎホールディングス 光学装置、露光装置および露光方法
JP2024089178A (ja) * 2022-12-21 2024-07-03 キオクシア株式会社 露光装置、露光方法、及び半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1027743A (ja) * 1996-07-11 1998-01-27 Canon Inc 投影露光装置、デバイス製造方法及び収差補正光学系
US6411426B1 (en) * 2000-04-25 2002-06-25 Asml, Us, Inc. Apparatus, system, and method for active compensation of aberrations in an optical system
US7158215B2 (en) * 2003-06-30 2007-01-02 Asml Holding N.V. Large field of view protection optical system with aberration correctability for flat panel displays
JPWO2007091463A1 (ja) * 2006-02-07 2009-07-02 株式会社ニコン 反射屈折結像光学系、露光装置、およびデバイス製造方法
KR20080046765A (ko) * 2006-11-23 2008-05-28 삼성전자주식회사 반도체 노광설비에서의 광학 시스템
JP2008292801A (ja) * 2007-05-25 2008-12-04 Canon Inc 露光装置および方法
JP5398185B2 (ja) * 2008-07-09 2014-01-29 キヤノン株式会社 投影光学系、露光装置およびデバイス製造方法
JP5595001B2 (ja) * 2009-10-06 2014-09-24 キヤノン株式会社 投影光学系、露光装置及びデバイス製造方法
JP5595015B2 (ja) * 2009-11-16 2014-09-24 キヤノン株式会社 投影光学系、露光装置およびデバイス製造方法
JP6041541B2 (ja) * 2012-06-04 2016-12-07 キヤノン株式会社 露光装置及びデバイス製造方法
JP2013251482A (ja) * 2012-06-04 2013-12-12 Canon Inc 露光装置、露光装置の調整方法、それを用いたデバイスの製造方法
JP6463087B2 (ja) * 2014-11-14 2019-01-30 キヤノン株式会社 露光装置、および物品の製造方法
JP6748482B2 (ja) * 2016-05-25 2020-09-02 キヤノン株式会社 露光装置、および、物品の製造方法

Also Published As

Publication number Publication date
TWI654662B (zh) 2019-03-21
CN108121170A (zh) 2018-06-05
TW201822249A (zh) 2018-06-16
KR20180062370A (ko) 2018-06-08
CN108121170B (zh) 2020-06-26
JP2018091919A (ja) 2018-06-14
KR102234255B1 (ko) 2021-04-01

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