TWI652749B - A method for evaluating the quality of a laminate for evaluation of a thin film transistor, And quality management method of oxide semiconductor film - Google Patents
A method for evaluating the quality of a laminate for evaluation of a thin film transistor, And quality management method of oxide semiconductor film Download PDFInfo
- Publication number
- TWI652749B TWI652749B TW104120622A TW104120622A TWI652749B TW I652749 B TWI652749 B TW I652749B TW 104120622 A TW104120622 A TW 104120622A TW 104120622 A TW104120622 A TW 104120622A TW I652749 B TWI652749 B TW I652749B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide semiconductor
- thin film
- evaluation
- film
- semiconductor thin
- Prior art date
Links
- 239000010408 film Substances 0.000 title claims abstract description 197
- 239000004065 semiconductor Substances 0.000 title claims abstract description 194
- 239000010409 thin film Substances 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims abstract description 98
- 238000011156 evaluation Methods 0.000 title claims abstract description 74
- 238000007726 management method Methods 0.000 title description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 51
- 230000007547 defect Effects 0.000 claims abstract description 33
- 230000005284 excitation Effects 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 45
- 230000008859 change Effects 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 238000012360 testing method Methods 0.000 claims description 10
- 230000002123 temporal effect Effects 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000000523 sample Substances 0.000 description 60
- 238000005259 measurement Methods 0.000 description 46
- 230000015572 biosynthetic process Effects 0.000 description 26
- 239000011521 glass Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 238000005401 electroluminescence Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000011835 investigation Methods 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 1
- 101100214497 Solanum lycopersicum TFT5 gene Proteins 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
- G01R31/2623—Circuits therefor for testing field effect transistors, i.e. FET's for measuring break-down voltage therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H10D30/6756—Amorphous oxide semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Thin Film Transistor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electrodes Of Semiconductors (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-136349 | 2014-07-01 | ||
| JP2014136349A JP6283273B2 (ja) | 2014-07-01 | 2014-07-01 | 薄膜トランジスタ評価用の積層構造体の評価方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201613006A TW201613006A (en) | 2016-04-01 |
| TWI652749B true TWI652749B (zh) | 2019-03-01 |
Family
ID=55019098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104120622A TWI652749B (zh) | 2014-07-01 | 2015-06-26 | A method for evaluating the quality of a laminate for evaluation of a thin film transistor, And quality management method of oxide semiconductor film |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10203367B2 (enExample) |
| EP (1) | EP3166133A4 (enExample) |
| JP (1) | JP6283273B2 (enExample) |
| KR (1) | KR101923798B1 (enExample) |
| CN (1) | CN106463433B (enExample) |
| TW (1) | TWI652749B (enExample) |
| WO (1) | WO2016002554A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI865007B (zh) * | 2022-09-27 | 2024-12-01 | 日商日本顯示器股份有限公司 | 半導體裝置之製造方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5993496B2 (ja) * | 2014-07-16 | 2016-09-14 | 株式会社神戸製鋼所 | 酸化物半導体薄膜、及び前記酸化物半導体薄膜の表面に保護膜を有する積層体の品質評価方法、及び酸化物半導体薄膜の品質管理方法 |
| US10475711B2 (en) | 2016-04-27 | 2019-11-12 | Kobe Steel, Ltd. | Method for evaluating quality of oxide semiconductor thin film, method for managing quality of oxide semiconductor thin film, and device for manufacturing semiconductor using said method for managing quality |
| KR102161466B1 (ko) * | 2019-11-21 | 2020-10-05 | 주식회사 아바코 | 산화물 반도체 박막 검사장치 |
| CN111855704B (zh) * | 2020-07-28 | 2024-01-12 | 哈尔滨工业大学 | 双极晶体管电离损伤敏感部位的检测方法 |
| US12094787B2 (en) | 2021-08-03 | 2024-09-17 | Applied Materials, Inc. | Characterizing defects in semiconductor layers |
| JP7249395B1 (ja) * | 2021-11-10 | 2023-03-30 | 株式会社Sumco | 半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法 |
| KR102732045B1 (ko) * | 2022-01-28 | 2024-11-20 | 연세대학교 산학협력단 | 공정 모니터링 방법 및 장치 |
| JP2024172734A (ja) | 2023-06-01 | 2024-12-12 | 株式会社ディスコ | ゲッタリング層検出装置 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4476462B2 (ja) * | 2000-03-27 | 2010-06-09 | 株式会社栃木ニコン | 半導体の電気特性評価装置 |
| JP5213458B2 (ja) | 2008-01-08 | 2013-06-19 | キヤノン株式会社 | アモルファス酸化物及び電界効果型トランジスタ |
| JP2010040552A (ja) * | 2008-07-31 | 2010-02-18 | Idemitsu Kosan Co Ltd | 薄膜トランジスタ及びその製造方法 |
| JP5564331B2 (ja) * | 2009-05-29 | 2014-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5507133B2 (ja) * | 2009-07-03 | 2014-05-28 | 富士フイルム株式会社 | ボトムゲート構造の薄膜トランジスタの製造方法 |
| JP5601562B2 (ja) * | 2009-09-04 | 2014-10-08 | 独立行政法人理化学研究所 | 移動度測定装置及びその方法、並びに、抵抗率測定装置及びその方法 |
| KR20120090972A (ko) * | 2009-09-24 | 2012-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| DE112010003968B4 (de) | 2009-10-06 | 2016-12-29 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Einrichtung und Verfahren zum Messen einer Halbleiterladungsträgerlebensdauer |
| US10996258B2 (en) * | 2009-11-30 | 2021-05-04 | Ignis Innovation Inc. | Defect detection and correction of pixel circuits for AMOLED displays |
| WO2011135987A1 (en) * | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5814558B2 (ja) * | 2010-06-30 | 2015-11-17 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法 |
| CN102313849B (zh) * | 2010-06-30 | 2014-08-06 | 株式会社神户制钢所 | 氧化物半导体薄膜的评价方法及氧化物半导体薄膜的质量管理方法 |
| JP5350345B2 (ja) | 2010-09-22 | 2013-11-27 | 株式会社神戸製鋼所 | 薄膜半導体の結晶性評価装置および方法 |
| JP2013070010A (ja) * | 2010-11-26 | 2013-04-18 | Kobe Steel Ltd | 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ |
| JP2013168575A (ja) * | 2012-02-16 | 2013-08-29 | Univ Of Tokyo | 伸縮性回路基板 |
| JP6204036B2 (ja) | 2012-03-16 | 2017-09-27 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法 |
| WO2013168748A1 (ja) | 2012-05-09 | 2013-11-14 | 株式会社神戸製鋼所 | 薄膜トランジスタおよび表示装置 |
| JP6152348B2 (ja) | 2013-01-11 | 2017-06-21 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価方法及び酸化物半導体薄膜の品質管理方法 |
| US8981374B2 (en) * | 2013-01-30 | 2015-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5732120B2 (ja) | 2013-09-13 | 2015-06-10 | 株式会社神戸製鋼所 | 酸化物半導体薄膜の評価装置 |
-
2014
- 2014-07-01 JP JP2014136349A patent/JP6283273B2/ja not_active Expired - Fee Related
-
2015
- 2015-06-22 EP EP15814922.9A patent/EP3166133A4/en not_active Withdrawn
- 2015-06-22 US US15/316,801 patent/US10203367B2/en not_active Expired - Fee Related
- 2015-06-22 WO PCT/JP2015/067848 patent/WO2016002554A1/ja not_active Ceased
- 2015-06-22 CN CN201580031246.8A patent/CN106463433B/zh active Active
- 2015-06-22 KR KR1020167036722A patent/KR101923798B1/ko not_active Expired - Fee Related
- 2015-06-26 TW TW104120622A patent/TWI652749B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI865007B (zh) * | 2022-09-27 | 2024-12-01 | 日商日本顯示器股份有限公司 | 半導體裝置之製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20170184660A1 (en) | 2017-06-29 |
| CN106463433B (zh) | 2019-09-24 |
| KR20170013932A (ko) | 2017-02-07 |
| WO2016002554A1 (ja) | 2016-01-07 |
| JP6283273B2 (ja) | 2018-02-21 |
| CN106463433A (zh) | 2017-02-22 |
| TW201613006A (en) | 2016-04-01 |
| JP2016015390A (ja) | 2016-01-28 |
| US10203367B2 (en) | 2019-02-12 |
| KR101923798B1 (ko) | 2018-11-29 |
| EP3166133A4 (en) | 2018-02-21 |
| EP3166133A1 (en) | 2017-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI652749B (zh) | A method for evaluating the quality of a laminate for evaluation of a thin film transistor, And quality management method of oxide semiconductor film | |
| JP6152348B2 (ja) | 酸化物半導体薄膜の評価方法及び酸化物半導体薄膜の品質管理方法 | |
| EP3079165B1 (en) | Method for evaluating an oxide semiconductor thin film and for managing quality of the oxide semiconductor thin film | |
| TWI552233B (zh) | An oxide semiconductor thin film, and a thin film of the oxide semiconductor The quality evaluation method of the laminated body having the protective film on the surface of the film, and the quality management method of the oxide semiconductor thin film | |
| TWI463134B (zh) | Evaluation method of oxide semiconductor thin film, and quality management method of oxide semiconductor thin film | |
| US10475711B2 (en) | Method for evaluating quality of oxide semiconductor thin film, method for managing quality of oxide semiconductor thin film, and device for manufacturing semiconductor using said method for managing quality | |
| JP6653217B2 (ja) | 酸化物半導体薄膜の表面に保護膜を有する積層体の品質評価方法、及び酸化物半導体薄膜の品質管理方法 | |
| JP6452485B2 (ja) | 酸化物半導体薄膜の評価方法 | |
| JP6250855B1 (ja) | 酸化物半導体薄膜の品質評価方法、及び前記酸化物半導体薄膜の品質管理方法、並びに該品質評価方法を用いる半導体の製造装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |