CN106463433B - 氧化物半导体薄膜层叠体的品质评价方法及品质管理方法 - Google Patents

氧化物半导体薄膜层叠体的品质评价方法及品质管理方法 Download PDF

Info

Publication number
CN106463433B
CN106463433B CN201580031246.8A CN201580031246A CN106463433B CN 106463433 B CN106463433 B CN 106463433B CN 201580031246 A CN201580031246 A CN 201580031246A CN 106463433 B CN106463433 B CN 106463433B
Authority
CN
China
Prior art keywords
oxide semiconductor
film
semiconductor thin
thin film
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201580031246.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN106463433A (zh
Inventor
林和志
三木绫
川上信之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Publication of CN106463433A publication Critical patent/CN106463433A/zh
Application granted granted Critical
Publication of CN106463433B publication Critical patent/CN106463433B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G01R31/2623—Circuits therefor for testing field effect transistors, i.e. FET's for measuring break-down voltage therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN201580031246.8A 2014-07-01 2015-06-22 氧化物半导体薄膜层叠体的品质评价方法及品质管理方法 Active CN106463433B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-136349 2014-07-01
JP2014136349A JP6283273B2 (ja) 2014-07-01 2014-07-01 薄膜トランジスタ評価用の積層構造体の評価方法
PCT/JP2015/067848 WO2016002554A1 (ja) 2014-07-01 2015-06-22 酸化物半導体薄膜の表面に保護膜を有する積層体の品質評価方法、及び酸化物半導体薄膜の品質管理方法

Publications (2)

Publication Number Publication Date
CN106463433A CN106463433A (zh) 2017-02-22
CN106463433B true CN106463433B (zh) 2019-09-24

Family

ID=55019098

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580031246.8A Active CN106463433B (zh) 2014-07-01 2015-06-22 氧化物半导体薄膜层叠体的品质评价方法及品质管理方法

Country Status (7)

Country Link
US (1) US10203367B2 (enExample)
EP (1) EP3166133A4 (enExample)
JP (1) JP6283273B2 (enExample)
KR (1) KR101923798B1 (enExample)
CN (1) CN106463433B (enExample)
TW (1) TWI652749B (enExample)
WO (1) WO2016002554A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5993496B2 (ja) * 2014-07-16 2016-09-14 株式会社神戸製鋼所 酸化物半導体薄膜、及び前記酸化物半導体薄膜の表面に保護膜を有する積層体の品質評価方法、及び酸化物半導体薄膜の品質管理方法
US10475711B2 (en) 2016-04-27 2019-11-12 Kobe Steel, Ltd. Method for evaluating quality of oxide semiconductor thin film, method for managing quality of oxide semiconductor thin film, and device for manufacturing semiconductor using said method for managing quality
KR102161466B1 (ko) * 2019-11-21 2020-10-05 주식회사 아바코 산화물 반도체 박막 검사장치
CN111855704B (zh) * 2020-07-28 2024-01-12 哈尔滨工业大学 双极晶体管电离损伤敏感部位的检测方法
US12094787B2 (en) 2021-08-03 2024-09-17 Applied Materials, Inc. Characterizing defects in semiconductor layers
JP7249395B1 (ja) * 2021-11-10 2023-03-30 株式会社Sumco 半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法
KR102732045B1 (ko) * 2022-01-28 2024-11-20 연세대학교 산학협력단 공정 모니터링 방법 및 장치
JP2024048269A (ja) * 2022-09-27 2024-04-08 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP2024172734A (ja) 2023-06-01 2024-12-12 株式会社ディスコ ゲッタリング層検出装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033857A (ja) * 2010-06-30 2012-02-16 Kobe Steel Ltd 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法
JP2013168575A (ja) * 2012-02-16 2013-08-29 Univ Of Tokyo 伸縮性回路基板
JP2013254948A (ja) * 2012-05-09 2013-12-19 Kobe Steel Ltd 薄膜トランジスタおよび表示装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4476462B2 (ja) * 2000-03-27 2010-06-09 株式会社栃木ニコン 半導体の電気特性評価装置
JP5213458B2 (ja) 2008-01-08 2013-06-19 キヤノン株式会社 アモルファス酸化物及び電界効果型トランジスタ
JP2010040552A (ja) * 2008-07-31 2010-02-18 Idemitsu Kosan Co Ltd 薄膜トランジスタ及びその製造方法
JP5564331B2 (ja) * 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5507133B2 (ja) * 2009-07-03 2014-05-28 富士フイルム株式会社 ボトムゲート構造の薄膜トランジスタの製造方法
JP5601562B2 (ja) * 2009-09-04 2014-10-08 独立行政法人理化学研究所 移動度測定装置及びその方法、並びに、抵抗率測定装置及びその方法
KR20120090972A (ko) * 2009-09-24 2012-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
DE112010003968B4 (de) 2009-10-06 2016-12-29 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Einrichtung und Verfahren zum Messen einer Halbleiterladungsträgerlebensdauer
US10996258B2 (en) * 2009-11-30 2021-05-04 Ignis Innovation Inc. Defect detection and correction of pixel circuits for AMOLED displays
WO2011135987A1 (en) * 2010-04-28 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN102313849B (zh) * 2010-06-30 2014-08-06 株式会社神户制钢所 氧化物半导体薄膜的评价方法及氧化物半导体薄膜的质量管理方法
JP5350345B2 (ja) 2010-09-22 2013-11-27 株式会社神戸製鋼所 薄膜半導体の結晶性評価装置および方法
JP2013070010A (ja) * 2010-11-26 2013-04-18 Kobe Steel Ltd 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ
JP6204036B2 (ja) 2012-03-16 2017-09-27 株式会社神戸製鋼所 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法
JP6152348B2 (ja) 2013-01-11 2017-06-21 株式会社神戸製鋼所 酸化物半導体薄膜の評価方法及び酸化物半導体薄膜の品質管理方法
US8981374B2 (en) * 2013-01-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5732120B2 (ja) 2013-09-13 2015-06-10 株式会社神戸製鋼所 酸化物半導体薄膜の評価装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012033857A (ja) * 2010-06-30 2012-02-16 Kobe Steel Ltd 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法
JP2013168575A (ja) * 2012-02-16 2013-08-29 Univ Of Tokyo 伸縮性回路基板
JP2013254948A (ja) * 2012-05-09 2013-12-19 Kobe Steel Ltd 薄膜トランジスタおよび表示装置

Also Published As

Publication number Publication date
US20170184660A1 (en) 2017-06-29
KR20170013932A (ko) 2017-02-07
WO2016002554A1 (ja) 2016-01-07
TWI652749B (zh) 2019-03-01
JP6283273B2 (ja) 2018-02-21
CN106463433A (zh) 2017-02-22
TW201613006A (en) 2016-04-01
JP2016015390A (ja) 2016-01-28
US10203367B2 (en) 2019-02-12
KR101923798B1 (ko) 2018-11-29
EP3166133A4 (en) 2018-02-21
EP3166133A1 (en) 2017-05-10

Similar Documents

Publication Publication Date Title
CN106463433B (zh) 氧化物半导体薄膜层叠体的品质评价方法及品质管理方法
EP3079165B1 (en) Method for evaluating an oxide semiconductor thin film and for managing quality of the oxide semiconductor thin film
TWI463134B (zh) Evaluation method of oxide semiconductor thin film, and quality management method of oxide semiconductor thin film
JP6152348B2 (ja) 酸化物半導体薄膜の評価方法及び酸化物半導体薄膜の品質管理方法
TWI552233B (zh) An oxide semiconductor thin film, and a thin film of the oxide semiconductor The quality evaluation method of the laminated body having the protective film on the surface of the film, and the quality management method of the oxide semiconductor thin film
KR101251123B1 (ko) 산화물 반도체 박막의 평가 방법 및 산화물 반도체 박막의 품질 관리 방법
US10475711B2 (en) Method for evaluating quality of oxide semiconductor thin film, method for managing quality of oxide semiconductor thin film, and device for manufacturing semiconductor using said method for managing quality
JP6653217B2 (ja) 酸化物半導体薄膜の表面に保護膜を有する積層体の品質評価方法、及び酸化物半導体薄膜の品質管理方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant