JP6283273B2 - 薄膜トランジスタ評価用の積層構造体の評価方法 - Google Patents

薄膜トランジスタ評価用の積層構造体の評価方法 Download PDF

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Publication number
JP6283273B2
JP6283273B2 JP2014136349A JP2014136349A JP6283273B2 JP 6283273 B2 JP6283273 B2 JP 6283273B2 JP 2014136349 A JP2014136349 A JP 2014136349A JP 2014136349 A JP2014136349 A JP 2014136349A JP 6283273 B2 JP6283273 B2 JP 6283273B2
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JP
Japan
Prior art keywords
thin film
oxide semiconductor
semiconductor thin
excitation light
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2014136349A
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English (en)
Japanese (ja)
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JP2016015390A5 (enExample
JP2016015390A (ja
Inventor
林　和志
和志 林
綾 三木
綾 三木
川上　信之
信之 川上
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Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
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Publication date
Priority to JP2014136349A priority Critical patent/JP6283273B2/ja
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to CN201580031246.8A priority patent/CN106463433B/zh
Priority to PCT/JP2015/067848 priority patent/WO2016002554A1/ja
Priority to US15/316,801 priority patent/US10203367B2/en
Priority to EP15814922.9A priority patent/EP3166133A4/en
Priority to KR1020167036722A priority patent/KR101923798B1/ko
Priority to TW104120622A priority patent/TWI652749B/zh
Publication of JP2016015390A publication Critical patent/JP2016015390A/ja
Publication of JP2016015390A5 publication Critical patent/JP2016015390A5/ja
Application granted granted Critical
Publication of JP6283273B2 publication Critical patent/JP6283273B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G01R31/2623—Circuits therefor for testing field effect transistors, i.e. FET's for measuring break-down voltage therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2014136349A 2014-07-01 2014-07-01 薄膜トランジスタ評価用の積層構造体の評価方法 Expired - Fee Related JP6283273B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2014136349A JP6283273B2 (ja) 2014-07-01 2014-07-01 薄膜トランジスタ評価用の積層構造体の評価方法
PCT/JP2015/067848 WO2016002554A1 (ja) 2014-07-01 2015-06-22 酸化物半導体薄膜の表面に保護膜を有する積層体の品質評価方法、及び酸化物半導体薄膜の品質管理方法
US15/316,801 US10203367B2 (en) 2014-07-01 2015-06-22 Quality evaluation method for laminate having protective layer on surface of oxide semiconductor thin film and quality control method for oxide semiconductor thin film
EP15814922.9A EP3166133A4 (en) 2014-07-01 2015-06-22 Quality evaluation method for laminate having protective layer on surface of oxide semiconductor thin film and quality control method for oxide semiconductor thin film
CN201580031246.8A CN106463433B (zh) 2014-07-01 2015-06-22 氧化物半导体薄膜层叠体的品质评价方法及品质管理方法
KR1020167036722A KR101923798B1 (ko) 2014-07-01 2015-06-22 산화물 반도체 박막의 표면에 보호막을 갖는 적층체의 품질 평가 방법 및 산화물 반도체 박막의 품질 관리 방법
TW104120622A TWI652749B (zh) 2014-07-01 2015-06-26 A method for evaluating the quality of a laminate for evaluation of a thin film transistor, And quality management method of oxide semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014136349A JP6283273B2 (ja) 2014-07-01 2014-07-01 薄膜トランジスタ評価用の積層構造体の評価方法

Publications (3)

Publication Number Publication Date
JP2016015390A JP2016015390A (ja) 2016-01-28
JP2016015390A5 JP2016015390A5 (enExample) 2017-02-02
JP6283273B2 true JP6283273B2 (ja) 2018-02-21

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JP2014136349A Expired - Fee Related JP6283273B2 (ja) 2014-07-01 2014-07-01 薄膜トランジスタ評価用の積層構造体の評価方法

Country Status (7)

Country Link
US (1) US10203367B2 (enExample)
EP (1) EP3166133A4 (enExample)
JP (1) JP6283273B2 (enExample)
KR (1) KR101923798B1 (enExample)
CN (1) CN106463433B (enExample)
TW (1) TWI652749B (enExample)
WO (1) WO2016002554A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5993496B2 (ja) * 2014-07-16 2016-09-14 株式会社神戸製鋼所 酸化物半導体薄膜、及び前記酸化物半導体薄膜の表面に保護膜を有する積層体の品質評価方法、及び酸化物半導体薄膜の品質管理方法
US10475711B2 (en) 2016-04-27 2019-11-12 Kobe Steel, Ltd. Method for evaluating quality of oxide semiconductor thin film, method for managing quality of oxide semiconductor thin film, and device for manufacturing semiconductor using said method for managing quality
KR102161466B1 (ko) * 2019-11-21 2020-10-05 주식회사 아바코 산화물 반도체 박막 검사장치
CN111855704B (zh) * 2020-07-28 2024-01-12 哈尔滨工业大学 双极晶体管电离损伤敏感部位的检测方法
US12094787B2 (en) 2021-08-03 2024-09-17 Applied Materials, Inc. Characterizing defects in semiconductor layers
JP7249395B1 (ja) * 2021-11-10 2023-03-30 株式会社Sumco 半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法
KR102732045B1 (ko) * 2022-01-28 2024-11-20 연세대학교 산학협력단 공정 모니터링 방법 및 장치
JP2024048269A (ja) * 2022-09-27 2024-04-08 株式会社ジャパンディスプレイ 半導体装置の製造方法
JP2024172734A (ja) 2023-06-01 2024-12-12 株式会社ディスコ ゲッタリング層検出装置

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JP4476462B2 (ja) * 2000-03-27 2010-06-09 株式会社栃木ニコン 半導体の電気特性評価装置
JP5213458B2 (ja) 2008-01-08 2013-06-19 キヤノン株式会社 アモルファス酸化物及び電界効果型トランジスタ
JP2010040552A (ja) * 2008-07-31 2010-02-18 Idemitsu Kosan Co Ltd 薄膜トランジスタ及びその製造方法
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JP5507133B2 (ja) * 2009-07-03 2014-05-28 富士フイルム株式会社 ボトムゲート構造の薄膜トランジスタの製造方法
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KR20120090972A (ko) * 2009-09-24 2012-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
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Also Published As

Publication number Publication date
US20170184660A1 (en) 2017-06-29
CN106463433B (zh) 2019-09-24
KR20170013932A (ko) 2017-02-07
WO2016002554A1 (ja) 2016-01-07
TWI652749B (zh) 2019-03-01
CN106463433A (zh) 2017-02-22
TW201613006A (en) 2016-04-01
JP2016015390A (ja) 2016-01-28
US10203367B2 (en) 2019-02-12
KR101923798B1 (ko) 2018-11-29
EP3166133A4 (en) 2018-02-21
EP3166133A1 (en) 2017-05-10

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