TWI651588B - 蒸鍍遮罩之製造方法及蒸鍍遮罩 - Google Patents
蒸鍍遮罩之製造方法及蒸鍍遮罩 Download PDFInfo
- Publication number
- TWI651588B TWI651588B TW105104157A TW105104157A TWI651588B TW I651588 B TWI651588 B TW I651588B TW 105104157 A TW105104157 A TW 105104157A TW 105104157 A TW105104157 A TW 105104157A TW I651588 B TWI651588 B TW I651588B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal layer
- vapor deposition
- deposition mask
- substrate
- pattern
- Prior art date
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 279
- 238000000034 method Methods 0.000 title claims abstract description 156
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 340
- 239000002184 metal Substances 0.000 claims abstract description 340
- 239000000758 substrate Substances 0.000 claims abstract description 172
- 230000008569 process Effects 0.000 claims abstract description 80
- 238000007747 plating Methods 0.000 claims abstract description 74
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 38
- 238000000926 separation method Methods 0.000 claims description 16
- 238000001704 evaporation Methods 0.000 claims description 14
- 230000008020 evaporation Effects 0.000 claims description 14
- 238000009713 electroplating Methods 0.000 claims description 11
- 238000004587 chromatography analysis Methods 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 4
- 230000000994 depressogenic effect Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 47
- 239000000243 solution Substances 0.000 description 23
- 238000012986 modification Methods 0.000 description 17
- 230000004048 modification Effects 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000005019 vapor deposition process Methods 0.000 description 7
- 229910000640 Fe alloy Inorganic materials 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910001374 Invar Inorganic materials 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 150000002506 iron compounds Chemical class 0.000 description 1
- SQZYOZWYVFYNFV-UHFFFAOYSA-L iron(2+);disulfamate Chemical compound [Fe+2].NS([O-])(=O)=O.NS([O-])(=O)=O SQZYOZWYVFYNFV-UHFFFAOYSA-L 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 150000002816 nickel compounds Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/08—Perforated or foraminous objects, e.g. sieves
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015024626 | 2015-02-10 | ||
| JP2015-024626 | 2015-02-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201640220A TW201640220A (zh) | 2016-11-16 |
| TWI651588B true TWI651588B (zh) | 2019-02-21 |
Family
ID=56615612
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107144160A TWI682237B (zh) | 2015-02-10 | 2016-02-05 | 蒸鍍遮罩 |
| TW105104157A TWI651588B (zh) | 2015-02-10 | 2016-02-05 | 蒸鍍遮罩之製造方法及蒸鍍遮罩 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107144160A TWI682237B (zh) | 2015-02-10 | 2016-02-05 | 蒸鍍遮罩 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6688478B2 (ja) |
| KR (1) | KR102474454B1 (ja) |
| CN (2) | CN110551973B (ja) |
| TW (2) | TWI682237B (ja) |
| WO (1) | WO2016129534A1 (ja) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6425135B2 (ja) * | 2015-04-07 | 2018-11-21 | 大日本印刷株式会社 | 蒸着マスクの製造方法 |
| KR20180043816A (ko) * | 2015-09-30 | 2018-04-30 | 다이니폰 인사츠 가부시키가이샤 | 증착 마스크, 증착 마스크의 제조 방법 및 금속판 |
| US10541387B2 (en) | 2015-09-30 | 2020-01-21 | Dai Nippon Printing Co., Ltd. | Deposition mask, method of manufacturing deposition mask and metal plate |
| US11220736B2 (en) | 2016-11-18 | 2022-01-11 | Dai Nippon Printing Co., Ltd. | Deposition mask |
| EP4148161A1 (en) | 2016-12-14 | 2023-03-15 | Dai Nippon Printing Co., Ltd. | Method of manufacturing vapor deposition mask device |
| JP7121918B2 (ja) * | 2016-12-14 | 2022-08-19 | 大日本印刷株式会社 | 蒸着マスク装置及び蒸着マスク装置の製造方法 |
| US20180183014A1 (en) * | 2016-12-27 | 2018-06-28 | Int Tech Co., Ltd. | Light emitting device |
| KR102657827B1 (ko) * | 2017-01-17 | 2024-04-17 | 다이니폰 인사츠 가부시키가이샤 | 중간 제품 |
| KR102330373B1 (ko) | 2017-03-14 | 2021-11-23 | 엘지이노텍 주식회사 | 금속판, 증착용 마스크 및 이의 제조방법 |
| EP3650575A4 (en) | 2017-07-05 | 2021-04-21 | Dai Nippon Printing Co., Ltd. | Vapor deposition mask, vapor deposition mask device, vapor deposition mask manufacturing method, and vapor deposition mask device manufacturing method |
| JP6652227B2 (ja) | 2017-10-27 | 2020-02-19 | 大日本印刷株式会社 | 蒸着マスク及び蒸着マスクの製造方法 |
| JPWO2019098168A1 (ja) | 2017-11-14 | 2019-11-14 | 大日本印刷株式会社 | 蒸着マスクを製造するための金属板、金属板の検査方法、金属板の製造方法、蒸着マスク、蒸着マスク装置及び蒸着マスクの製造方法 |
| JP6364599B1 (ja) * | 2017-11-20 | 2018-08-01 | 株式会社プロセス・ラボ・ミクロン | 微細パターンニッケル薄膜とその製造方法 |
| JP7049593B2 (ja) * | 2017-11-30 | 2022-04-07 | 大日本印刷株式会社 | 蒸着マスク及び蒸着マスクの製造方法 |
| US11414741B2 (en) * | 2018-03-22 | 2022-08-16 | Sharp Kabushiki Kaisha | Vapor deposition mask and vapor deposition device |
| JP6997975B2 (ja) * | 2018-07-03 | 2022-01-18 | 大日本印刷株式会社 | マスク及びその製造方法 |
| EP3822387A4 (en) * | 2018-07-09 | 2022-05-04 | Dai Nippon Printing Co., Ltd. | VAPOR DEPOSITION MASK DEFECT DETERMINATION METHOD, VAPOR DEPOSITION MASK PRODUCTION METHOD, VAPOR DEPOSITION MASK DEVICE MANUFACTURING METHOD, VAPOR DEPOSITION MASK SELECTION METHOD AND VAPOR DEPOSITION |
| DE202019006014U1 (de) | 2018-11-13 | 2024-01-25 | Dai Nippon Printing Co., Ltd. | Metallplatte zur Herstellung von Dampfphasenabscheidungsmasken |
| KR20220017521A (ko) * | 2019-01-31 | 2022-02-11 | 다이니폰 인사츠 가부시키가이샤 | 증착 마스크군, 전자 디바이스의 제조 방법 및 전자 디바이스 |
| CN109913804B (zh) * | 2019-03-27 | 2021-01-26 | 京东方科技集团股份有限公司 | 掩膜版及其制造方法 |
| CN114127338B (zh) * | 2019-05-13 | 2022-12-09 | 创造未来有限公司 | 精细金属掩模制造用模具制造方法及精细金属掩模制造方法 |
| JP2022067159A (ja) * | 2020-10-20 | 2022-05-06 | 株式会社ジャパンディスプレイ | 蒸着マスクユニットとその製造方法 |
| CN115627443A (zh) * | 2020-11-18 | 2023-01-20 | 匠博先进材料科技(广州)有限公司 | 蒸镀掩模、组件、装置、显示装置及其制造方法和装置 |
| TWI828015B (zh) * | 2021-12-01 | 2024-01-01 | 達運精密工業股份有限公司 | 精密金屬遮罩的製造方法 |
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| JP2009054512A (ja) * | 2007-08-29 | 2009-03-12 | Seiko Epson Corp | マスク |
| TW201403564A (zh) * | 2012-06-01 | 2014-01-16 | Semiconductor Energy Lab | 半導體裝置及半導體裝置的驅動方法 |
| TW201508970A (zh) * | 2013-08-09 | 2015-03-01 | Semiconductor Energy Lab | 發光元件、顯示模組、照明模組、發光裝置、顯示裝置、電子裝置、及照明裝置 |
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| JP2001234385A (ja) | 2000-02-24 | 2001-08-31 | Tohoku Pioneer Corp | メタルマスク及びその製造方法 |
| JP4046269B2 (ja) * | 2001-05-24 | 2008-02-13 | 九州日立マクセル株式会社 | 有機ｅｌ素子用蒸着マスクと有機ｅｌ素子用蒸着マスクの製造方法 |
| JP2003107723A (ja) * | 2001-09-25 | 2003-04-09 | Eastman Kodak Co | メタルマスクの製造方法およびメタルマスク |
| JP2003213401A (ja) * | 2002-01-16 | 2003-07-30 | Sony Corp | 蒸着マスクおよび成膜装置 |
| JP2003253434A (ja) * | 2002-03-01 | 2003-09-10 | Sanyo Electric Co Ltd | 蒸着方法及び表示装置の製造方法 |
| KR100921268B1 (ko) * | 2003-11-17 | 2009-10-09 | 제이에스알 가부시끼가이샤 | 이방 도전성 시트, 그의 제조 방법 및 그의 응용 제품 |
| JP2005154879A (ja) * | 2003-11-28 | 2005-06-16 | Canon Components Inc | 蒸着用メタルマスク及びそれを用いた蒸着パターンの製造方法 |
| TWI427682B (zh) * | 2006-07-04 | 2014-02-21 | Semiconductor Energy Lab | 顯示裝置的製造方法 |
| JP5013020B2 (ja) * | 2010-03-31 | 2012-08-29 | 東レ株式会社 | 転写用ドナー基板、デバイスの製造方法および有機ｅｌ素子 |
| KR20130057794A (ko) * | 2011-11-24 | 2013-06-03 | 삼성디스플레이 주식회사 | 증착용 마스크 및 증착용 마스크의 제조 방법 |
| CN103205696A (zh) * | 2012-01-16 | 2013-07-17 | 昆山允升吉光电科技有限公司 | 蒸镀掩膜板 |
| CN202576542U (zh) * | 2012-01-16 | 2012-12-05 | 昆山允升吉光电科技有限公司 | 蒸镀用掩模板 |
| CN103205695B (zh) * | 2012-01-16 | 2015-11-25 | 昆山允升吉光电科技有限公司 | 一种蒸镀用掩模板及其制作工艺 |
| CN103205697B (zh) * | 2012-01-16 | 2016-03-02 | 昆山允升吉光电科技有限公司 | 蒸镀掩模板及其制造方法 |
| JP6078746B2 (ja) * | 2012-12-21 | 2017-02-15 | 株式会社ブイ・テクノロジー | 蒸着マスクの製造方法 |
| JP5382259B1 (ja) | 2013-01-10 | 2014-01-08 | 大日本印刷株式会社 | 金属板、金属板の製造方法、および金属板を用いて蒸着マスクを製造する方法 |
| CN104213072B (zh) * | 2013-05-31 | 2016-09-14 | 旭晖应用材料股份有限公司 | 复合式遮罩及其制造方法 |
| CN103938154B (zh) * | 2013-06-21 | 2017-04-19 | 厦门天马微电子有限公司 | 一种掩膜板及其制造方法 |
| CN103589994A (zh) * | 2013-10-09 | 2014-02-19 | 昆山允升吉光电科技有限公司 | 一种蒸镀用掩模板的制备方法 |
| CN103572206B (zh) * | 2013-11-08 | 2019-01-15 | 昆山允升吉光电科技有限公司 | 一种复合掩模板组件的制作方法 |
| CN203999787U (zh) * | 2014-08-12 | 2014-12-10 | 北京维信诺科技有限公司 | 一种蒸镀掩膜版 |
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2016
- 2016-02-05 CN CN201910940065.7A patent/CN110551973B/zh active Active
- 2016-02-05 TW TW107144160A patent/TWI682237B/zh active
- 2016-02-05 WO PCT/JP2016/053581 patent/WO2016129534A1/ja active Application Filing
- 2016-02-05 KR KR1020177021747A patent/KR102474454B1/ko active IP Right Grant
- 2016-02-05 CN CN201680009233.5A patent/CN107208251B/zh active Active
- 2016-02-05 TW TW105104157A patent/TWI651588B/zh active
- 2016-02-05 JP JP2016021263A patent/JP6688478B2/ja active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200824000A (en) * | 2006-07-28 | 2008-06-01 | Semiconductor Energy Lab | Method for manufacturing display device |
| JP2009054512A (ja) * | 2007-08-29 | 2009-03-12 | Seiko Epson Corp | マスク |
| TW201403564A (zh) * | 2012-06-01 | 2014-01-16 | Semiconductor Energy Lab | 半導體裝置及半導體裝置的驅動方法 |
| TW201508970A (zh) * | 2013-08-09 | 2015-03-01 | Semiconductor Energy Lab | 發光元件、顯示模組、照明模組、發光裝置、顯示裝置、電子裝置、及照明裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107208251A (zh) | 2017-09-26 |
| TW201921099A (zh) | 2019-06-01 |
| TWI682237B (zh) | 2020-01-11 |
| WO2016129534A1 (ja) | 2016-08-18 |
| CN110551973B (zh) | 2022-06-14 |
| JP2016148112A (ja) | 2016-08-18 |
| CN107208251B (zh) | 2019-10-25 |
| KR20170110623A (ko) | 2017-10-11 |
| KR102474454B1 (ko) | 2022-12-06 |
| CN110551973A (zh) | 2019-12-10 |
| TW201640220A (zh) | 2016-11-16 |
| JP6688478B2 (ja) | 2020-04-28 |
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