TWI649412B - 新穎之羧酸鎓鹽、化學增幅光阻組成物及圖案形成方法 - Google Patents

新穎之羧酸鎓鹽、化學增幅光阻組成物及圖案形成方法 Download PDF

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TWI649412B
TWI649412B TW106113678A TW106113678A TWI649412B TW I649412 B TWI649412 B TW I649412B TW 106113678 A TW106113678 A TW 106113678A TW 106113678 A TW106113678 A TW 106113678A TW I649412 B TWI649412 B TW I649412B
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group
carbon atoms
branched
formula
atom
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TW106113678A
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TW201800551A (zh
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福島將大
片山和弘
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信越化學工業股份有限公司
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    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C271/00Derivatives of carbamic acids, i.e. compounds containing any of the groups, the nitrogen atom not being part of nitro or nitroso groups
    • C07C271/06Esters of carbamic acids
    • C07C271/08Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms
    • C07C271/24Esters of carbamic acids having oxygen atoms of carbamate groups bound to acyclic carbon atoms with the nitrogen atom of at least one of the carbamate groups bound to a carbon atom of a ring other than a six-membered aromatic ring
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
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    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C59/00Compounds having carboxyl groups bound to acyclic carbon atoms and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
    • C07C59/01Saturated compounds having only one carboxyl group and containing hydroxy or O-metal groups
    • C07C59/115Saturated compounds having only one carboxyl group and containing hydroxy or O-metal groups containing halogen
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    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/74Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C69/753Esters of carboxylic acids having an esterified carboxyl group bound to a carbon atom of a ring other than a six-membered aromatic ring of polycyclic acids
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    • C07DHETEROCYCLIC COMPOUNDS
    • C07D307/00Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
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    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D493/00Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/12Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains three hetero rings
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    • CCHEMISTRY; METALLURGY
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    • C07C2601/00Systems containing only non-condensed rings
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    • CCHEMISTRY; METALLURGY
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    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00Systems containing at least three condensed rings
    • C07C2603/56Ring systems containing bridged rings
    • C07C2603/58Ring systems containing bridged rings containing three rings
    • C07C2603/60Ring systems containing bridged rings containing three rings containing at least one ring with less than six members
    • C07C2603/66Ring systems containing bridged rings containing three rings containing at least one ring with less than six members containing five-membered rings
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00Systems containing at least three condensed rings
    • C07C2603/56Ring systems containing bridged rings
    • C07C2603/58Ring systems containing bridged rings containing three rings
    • C07C2603/70Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74Adamantanes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Furan Compounds (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW106113678A 2016-04-28 2017-04-25 新穎之羧酸鎓鹽、化學增幅光阻組成物及圖案形成方法 TWI649412B (zh)

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JP2016-090752 2016-04-28
JP2016090752A JP6583126B2 (ja) 2016-04-28 2016-04-28 新規カルボン酸オニウム塩、化学増幅レジスト組成物、及びパターン形成方法

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TWI649412B true TWI649412B (zh) 2019-02-01

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JP6734109B2 (ja) * 2016-04-28 2020-08-05 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物
JP6980993B2 (ja) * 2016-10-06 2021-12-15 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7140100B2 (ja) * 2017-03-01 2022-09-21 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、及び酸拡散制御剤
CN115079517A (zh) * 2017-11-30 2022-09-20 罗门哈斯电子材料有限责任公司 盐和包含其的光致抗蚀剂
JP6967655B2 (ja) * 2018-02-28 2021-11-17 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
JP7185684B2 (ja) * 2018-03-27 2022-12-07 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び、電子デバイスの製造方法
KR102503368B1 (ko) * 2018-08-29 2023-02-24 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법
JP7351371B2 (ja) * 2018-09-11 2023-09-27 信越化学工業株式会社 レジスト組成物、及びパターン形成方法
JP7365110B2 (ja) * 2018-09-11 2023-10-19 信越化学工業株式会社 ヨードニウム塩、レジスト組成物、及びパターン形成方法
JP7056524B2 (ja) * 2018-11-15 2022-04-19 信越化学工業株式会社 新規塩化合物、化学増幅レジスト組成物、及びパターン形成方法
JP7344108B2 (ja) * 2019-01-08 2023-09-13 信越化学工業株式会社 レジスト組成物、及びパターン形成方法
JP7096189B2 (ja) * 2019-03-22 2022-07-05 信越化学工業株式会社 レジスト組成物及びパターン形成方法
JP7334683B2 (ja) 2019-08-02 2023-08-29 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP7334684B2 (ja) 2019-08-02 2023-08-29 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7351257B2 (ja) 2019-08-14 2023-09-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7354954B2 (ja) 2019-09-04 2023-10-03 信越化学工業株式会社 レジスト材料及びパターン形成方法
US11609495B2 (en) * 2019-10-28 2023-03-21 Jsr Corporation Radiation-sensitive resin composition and resist pattern-forming method
JP7363742B2 (ja) * 2019-11-20 2023-10-18 信越化学工業株式会社 オニウム塩化合物、化学増幅レジスト組成物及びパターン形成方法
US20210188770A1 (en) * 2019-12-11 2021-06-24 Shin-Etsu Chemical Co., Ltd. Onium salt compound, chemically amplified resist composition and patterning process
JP7255472B2 (ja) * 2019-12-12 2023-04-11 信越化学工業株式会社 オニウム塩化合物、化学増幅レジスト組成物及びパターン形成方法
JP2021103234A (ja) * 2019-12-25 2021-07-15 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP2021182133A (ja) 2020-05-18 2021-11-25 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP2022000689A (ja) * 2020-06-18 2022-01-04 信越化学工業株式会社 レジスト材料及びパターン形成方法
TW202219079A (zh) * 2020-09-25 2022-05-16 日商Jsr股份有限公司 感放射線性樹脂組成物、圖案形成方法及鎓鹽化合物
JP7484846B2 (ja) 2020-09-28 2024-05-16 信越化学工業株式会社 分子レジスト組成物及びパターン形成方法
JP2022081416A (ja) * 2020-11-19 2022-05-31 信越化学工業株式会社 レジスト組成物及びパターン形成方法
JP2023180781A (ja) * 2022-06-10 2023-12-21 信越化学工業株式会社 レジスト下層膜材料、パターン形成方法、及びレジスト下層膜形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130101936A1 (en) * 2011-10-25 2013-04-25 Shin-Etsu Chemical Co., Ltd. Positive resist composition and patterning process
US20130157197A1 (en) * 2011-12-14 2013-06-20 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and compound
TW201516024A (zh) * 2013-09-11 2015-05-01 Shinetsu Chemical Co 鋶鹽、化學增幅型光阻組成物及圖案形成方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3991462B2 (ja) * 1997-08-18 2007-10-17 Jsr株式会社 感放射線性樹脂組成物
KR100551653B1 (ko) 1997-08-18 2006-05-25 제이에스알 가부시끼가이샤 감방사선성수지조성물
JPH11327143A (ja) 1998-05-13 1999-11-26 Fujitsu Ltd レジスト及びレジストパターンの形成方法
JP4231622B2 (ja) 2000-01-27 2009-03-04 富士フイルム株式会社 ポジ型レジスト組成物
TWI224713B (en) * 2000-01-27 2004-12-01 Fuji Photo Film Co Ltd Positive photoresist composition
EP1179750B1 (en) 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
JP4226803B2 (ja) 2000-08-08 2009-02-18 富士フイルム株式会社 ポジ型感光性組成物
EP1314725B1 (en) * 2000-08-30 2008-03-19 Wako Pure Chemical Industries, Ltd. Sulfonium salt compound
JP2002072481A (ja) * 2000-09-01 2002-03-12 Fuji Photo Film Co Ltd ポジ型感光性樹脂組成物
JP2002072482A (ja) * 2000-09-01 2002-03-12 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
US7214465B2 (en) * 2002-01-10 2007-05-08 Fujifilm Corporation Positive photosensitive composition
US7759348B2 (en) * 2003-07-30 2010-07-20 Xenon Pharmaceuticals Inc. Pyridazine derivatives and their use as therapeutic agents
JP4369375B2 (ja) * 2005-01-14 2009-11-18 富士フイルム株式会社 赤外線レーザー対応ポジ型平版印刷版原版
JP5659028B2 (ja) 2010-10-22 2015-01-28 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
JP5708518B2 (ja) * 2011-02-09 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP5741521B2 (ja) * 2011-05-11 2015-07-01 信越化学工業株式会社 レジスト組成物及びパターン形成法
JP5846888B2 (ja) * 2011-12-14 2016-01-20 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
JP5803957B2 (ja) * 2013-03-05 2015-11-04 信越化学工業株式会社 パターン形成方法及びレジスト組成物
JP6131910B2 (ja) * 2014-05-28 2017-05-24 信越化学工業株式会社 レジスト組成物及びパターン形成方法
US10222696B2 (en) * 2015-12-28 2019-03-05 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US9958776B2 (en) * 2015-12-28 2018-05-01 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130101936A1 (en) * 2011-10-25 2013-04-25 Shin-Etsu Chemical Co., Ltd. Positive resist composition and patterning process
US20130157197A1 (en) * 2011-12-14 2013-06-20 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and compound
TW201516024A (zh) * 2013-09-11 2015-05-01 Shinetsu Chemical Co 鋶鹽、化學增幅型光阻組成物及圖案形成方法

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