TWI647326B - Method for manufacturing epitaxial wafer and germanium substrate for epitaxial growth - Google Patents

Method for manufacturing epitaxial wafer and germanium substrate for epitaxial growth Download PDF

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Publication number
TWI647326B
TWI647326B TW104105359A TW104105359A TWI647326B TW I647326 B TWI647326 B TW I647326B TW 104105359 A TW104105359 A TW 104105359A TW 104105359 A TW104105359 A TW 104105359A TW I647326 B TWI647326 B TW I647326B
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TW
Taiwan
Prior art keywords
epitaxial
substrate
epitaxial wafer
epitaxial growth
layer
Prior art date
Application number
TW104105359A
Other languages
English (en)
Chinese (zh)
Other versions
TW201600621A (zh
Inventor
萩本和德
篠宮勝
土屋慶太郎
後藤博一
佐藤憲
鹿內洋志
小林昇一
栗本宏高
Original Assignee
信越半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信越半導體股份有限公司 filed Critical 信越半導體股份有限公司
Publication of TW201600621A publication Critical patent/TW201600621A/zh
Application granted granted Critical
Publication of TWI647326B publication Critical patent/TWI647326B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW104105359A 2014-03-04 2015-02-16 Method for manufacturing epitaxial wafer and germanium substrate for epitaxial growth TWI647326B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014041976A JP6157381B2 (ja) 2014-03-04 2014-03-04 エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
JP2014-041976 2014-03-04

Publications (2)

Publication Number Publication Date
TW201600621A TW201600621A (zh) 2016-01-01
TWI647326B true TWI647326B (zh) 2019-01-11

Family

ID=54054884

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104105359A TWI647326B (zh) 2014-03-04 2015-02-16 Method for manufacturing epitaxial wafer and germanium substrate for epitaxial growth

Country Status (7)

Country Link
US (1) US10319587B2 (https=)
JP (1) JP6157381B2 (https=)
KR (1) KR102262063B1 (https=)
CN (1) CN106068547B (https=)
DE (1) DE112015000728B4 (https=)
TW (1) TWI647326B (https=)
WO (1) WO2015133063A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10388518B2 (en) 2017-03-31 2019-08-20 Globalwafers Co., Ltd. Epitaxial substrate and method of manufacturing the same
JP6879223B2 (ja) * 2018-01-18 2021-06-02 株式会社Sumco 貼り合わせウェーハの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200805453A (en) * 2006-01-31 2008-01-16 Sumco Corp Method for manufacturing epitaxial wafer
JP2011119336A (ja) * 2009-12-01 2011-06-16 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体基板
JP2013075815A (ja) * 2011-09-12 2013-04-25 Hitachi Cable Ltd 窒化物半導体結晶の製造方法、窒化物半導体エピタキシヤルウエハ、および窒化物半導体自立基板
CN103137656A (zh) * 2011-12-05 2013-06-05 三星电子株式会社 硅衬底及其制造方法和外延结构及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227117A (ja) 1983-06-08 1984-12-20 Nec Corp 半導体装置
JPS6230336A (ja) * 1985-07-31 1987-02-09 Fujitsu Ltd プラズマ酸化法
JP3336866B2 (ja) * 1996-08-27 2002-10-21 信越半導体株式会社 気相成長用シリコン単結晶基板の製造方法
JP2007246289A (ja) 2004-03-11 2007-09-27 Nec Corp 窒化ガリウム系半導体基板の作製方法
KR100925359B1 (ko) * 2006-09-06 2009-11-09 가부시키가이샤 섬코 에피택셜 웨이퍼 및 그 제조 방법
JP5029234B2 (ja) * 2006-09-06 2012-09-19 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP2011161975A (ja) 2010-02-05 2011-08-25 Toyota Motor Corp 車両のパワートレーン
JP5417211B2 (ja) 2010-02-10 2014-02-12 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長基板及び半導体装置、エピタキシャル成長方法
WO2011161975A1 (ja) 2010-06-25 2011-12-29 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長基板及び半導体装置、エピタキシャル成長方法
JP6130995B2 (ja) 2012-02-20 2017-05-17 サンケン電気株式会社 エピタキシャル基板及び半導体装置
WO2015114732A1 (ja) * 2014-01-28 2015-08-06 株式会社サイオクス 半導体基板の製造方法
JP6261388B2 (ja) * 2014-03-05 2018-01-17 信越半導体株式会社 半導体エピタキシャルウェーハの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200805453A (en) * 2006-01-31 2008-01-16 Sumco Corp Method for manufacturing epitaxial wafer
JP2011119336A (ja) * 2009-12-01 2011-06-16 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体基板
JP2013075815A (ja) * 2011-09-12 2013-04-25 Hitachi Cable Ltd 窒化物半導体結晶の製造方法、窒化物半導体エピタキシヤルウエハ、および窒化物半導体自立基板
CN103137656A (zh) * 2011-12-05 2013-06-05 三星电子株式会社 硅衬底及其制造方法和外延结构及其制造方法

Also Published As

Publication number Publication date
KR102262063B1 (ko) 2021-06-09
JP2015170616A (ja) 2015-09-28
US10319587B2 (en) 2019-06-11
JP6157381B2 (ja) 2017-07-05
CN106068547A (zh) 2016-11-02
TW201600621A (zh) 2016-01-01
DE112015000728B4 (de) 2025-12-24
KR20160127748A (ko) 2016-11-04
US20160365239A1 (en) 2016-12-15
CN106068547B (zh) 2019-06-04
DE112015000728T5 (de) 2017-05-11
WO2015133063A1 (ja) 2015-09-11

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