CN106068547B - 外延晶圆的制造方法及外延生长用硅系基板 - Google Patents

外延晶圆的制造方法及外延生长用硅系基板 Download PDF

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Publication number
CN106068547B
CN106068547B CN201580011736.1A CN201580011736A CN106068547B CN 106068547 B CN106068547 B CN 106068547B CN 201580011736 A CN201580011736 A CN 201580011736A CN 106068547 B CN106068547 B CN 106068547B
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China
Prior art keywords
epitaxial
epitaxial wafer
silicon
layer
manufacturing
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CN201580011736.1A
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Chinese (zh)
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CN106068547A (zh
Inventor
萩本和德
篠宫胜
土屋庆太郎
后藤博一
佐藤宪
鹿内洋志
小林昇一
栗本宏高
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201580011736.1A 2014-03-04 2015-02-10 外延晶圆的制造方法及外延生长用硅系基板 Active CN106068547B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014041976A JP6157381B2 (ja) 2014-03-04 2014-03-04 エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
JP2014-041976 2014-03-04
PCT/JP2015/000595 WO2015133063A1 (ja) 2014-03-04 2015-02-10 エピタキシャルウェーハの製造方法及びエピタキシャル成長用シリコン系基板

Publications (2)

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CN106068547A CN106068547A (zh) 2016-11-02
CN106068547B true CN106068547B (zh) 2019-06-04

Family

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Country Status (7)

Country Link
US (1) US10319587B2 (https=)
JP (1) JP6157381B2 (https=)
KR (1) KR102262063B1 (https=)
CN (1) CN106068547B (https=)
DE (1) DE112015000728B4 (https=)
TW (1) TWI647326B (https=)
WO (1) WO2015133063A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10388518B2 (en) 2017-03-31 2019-08-20 Globalwafers Co., Ltd. Epitaxial substrate and method of manufacturing the same
JP6879223B2 (ja) * 2018-01-18 2021-06-02 株式会社Sumco 貼り合わせウェーハの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882401A (en) * 1996-08-27 1999-03-16 Shin-Etsu Handotai Co., Ltd. Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth
JP2011119336A (ja) * 2009-12-01 2011-06-16 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体基板
CN103137656A (zh) * 2011-12-05 2013-06-05 三星电子株式会社 硅衬底及其制造方法和外延结构及其制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227117A (ja) 1983-06-08 1984-12-20 Nec Corp 半導体装置
JPS6230336A (ja) * 1985-07-31 1987-02-09 Fujitsu Ltd プラズマ酸化法
JP2007246289A (ja) 2004-03-11 2007-09-27 Nec Corp 窒化ガリウム系半導体基板の作製方法
JP2007204286A (ja) 2006-01-31 2007-08-16 Sumco Corp エピタキシャルウェーハの製造方法
KR100925359B1 (ko) * 2006-09-06 2009-11-09 가부시키가이샤 섬코 에피택셜 웨이퍼 및 그 제조 방법
JP5029234B2 (ja) * 2006-09-06 2012-09-19 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP2011161975A (ja) 2010-02-05 2011-08-25 Toyota Motor Corp 車両のパワートレーン
JP5417211B2 (ja) 2010-02-10 2014-02-12 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長基板及び半導体装置、エピタキシャル成長方法
WO2011161975A1 (ja) 2010-06-25 2011-12-29 Ｄｏｗａエレクトロニクス株式会社 エピタキシャル成長基板及び半導体装置、エピタキシャル成長方法
JP6026188B2 (ja) 2011-09-12 2016-11-16 住友化学株式会社 窒化物半導体結晶の製造方法
JP6130995B2 (ja) 2012-02-20 2017-05-17 サンケン電気株式会社 エピタキシャル基板及び半導体装置
WO2015114732A1 (ja) * 2014-01-28 2015-08-06 株式会社サイオクス 半導体基板の製造方法
JP6261388B2 (ja) * 2014-03-05 2018-01-17 信越半導体株式会社 半導体エピタキシャルウェーハの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5882401A (en) * 1996-08-27 1999-03-16 Shin-Etsu Handotai Co., Ltd. Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth
JP2011119336A (ja) * 2009-12-01 2011-06-16 Mitsubishi Electric Corp 半導体装置の製造方法およびそれに用いられる半導体基板
CN103137656A (zh) * 2011-12-05 2013-06-05 三星电子株式会社 硅衬底及其制造方法和外延结构及其制造方法

Also Published As

Publication number Publication date
KR102262063B1 (ko) 2021-06-09
JP2015170616A (ja) 2015-09-28
US10319587B2 (en) 2019-06-11
JP6157381B2 (ja) 2017-07-05
TWI647326B (zh) 2019-01-11
CN106068547A (zh) 2016-11-02
TW201600621A (zh) 2016-01-01
DE112015000728B4 (de) 2025-12-24
KR20160127748A (ko) 2016-11-04
US20160365239A1 (en) 2016-12-15
DE112015000728T5 (de) 2017-05-11
WO2015133063A1 (ja) 2015-09-11

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