TWI643299B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI643299B
TWI643299B TW103136519A TW103136519A TWI643299B TW I643299 B TWI643299 B TW I643299B TW 103136519 A TW103136519 A TW 103136519A TW 103136519 A TW103136519 A TW 103136519A TW I643299 B TWI643299 B TW I643299B
Authority
TW
Taiwan
Prior art keywords
layer
wiring
resistance element
metal resistance
layers
Prior art date
Application number
TW103136519A
Other languages
English (en)
Chinese (zh)
Other versions
TW201523822A (zh
Inventor
Shigeo Tokumitsu
德光成太
Takahiro Mori
森隆弘
Tetsuya Nitta
新田哲也
Original Assignee
Renesas Electronics Corporation
瑞薩電子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corporation, 瑞薩電子股份有限公司 filed Critical Renesas Electronics Corporation
Publication of TW201523822A publication Critical patent/TW201523822A/zh
Application granted granted Critical
Publication of TWI643299B publication Critical patent/TWI643299B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H10D1/474—Resistors having no potential barriers comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW103136519A 2013-10-30 2014-10-22 半導體裝置 TWI643299B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-225212 2013-10-30
JP2013225212A JP6396653B2 (ja) 2013-10-30 2013-10-30 半導体装置

Publications (2)

Publication Number Publication Date
TW201523822A TW201523822A (zh) 2015-06-16
TWI643299B true TWI643299B (zh) 2018-12-01

Family

ID=51799005

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103136519A TWI643299B (zh) 2013-10-30 2014-10-22 半導體裝置

Country Status (6)

Country Link
US (2) US9881868B2 (https=)
EP (1) EP2869343A3 (https=)
JP (1) JP6396653B2 (https=)
KR (1) KR20150050390A (https=)
CN (1) CN104600052A (https=)
TW (1) TWI643299B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6191804B2 (ja) * 2015-05-13 2017-09-06 株式会社村田製作所 薄膜デバイス
DE102016104507A1 (de) * 2016-03-11 2017-09-14 Infineon Technologies Ag Halbleiterbauelemente und ein Verfahren zum Bilden eines Halbleiterbauelements
JP6610785B2 (ja) * 2016-07-04 2019-11-27 三菱電機株式会社 半導体装置の製造方法
US10164002B2 (en) * 2016-11-29 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and layout method
JP6800815B2 (ja) * 2017-06-27 2020-12-16 ルネサスエレクトロニクス株式会社 半導体装置
JP7340948B2 (ja) * 2018-09-05 2023-09-08 ローム株式会社 電子部品
US12438080B2 (en) * 2018-09-28 2025-10-07 Intel Corporation And process for a precision resistor
KR102816786B1 (ko) 2019-06-21 2025-06-05 삼성전자주식회사 수직형 메모리 장치
US12183488B2 (en) 2020-03-03 2024-12-31 Rohm Co., Ltd. Electronic component
JP7760308B2 (ja) 2021-09-27 2025-10-27 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2023160005A (ja) * 2022-04-21 2023-11-02 ルネサスエレクトロニクス株式会社 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130234292A1 (en) * 2012-03-07 2013-09-12 Ming-Te Wei Thin film resistor structure

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Publication number Priority date Publication date Assignee Title
JPH06140396A (ja) * 1992-10-23 1994-05-20 Yamaha Corp 半導体装置とその製法
JP2001015599A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 半導体装置及びその製造方法
JP3715502B2 (ja) 2000-03-14 2005-11-09 株式会社東芝 半導体装置及びその製造方法
US6709918B1 (en) * 2002-12-02 2004-03-23 Chartered Semiconductor Manufacturing Ltd. Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology
JP2004303908A (ja) * 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
KR100524963B1 (ko) * 2003-05-14 2005-10-31 삼성전자주식회사 금속 배선 및 금속 저항을 포함하는 반도체 소자 및 그제조 방법
DE10341059B4 (de) * 2003-09-05 2007-05-31 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren
JP2005158803A (ja) * 2003-11-20 2005-06-16 Seiko Epson Corp 半導体装置および半導体装置の製造方法
JP4446771B2 (ja) * 2004-03-23 2010-04-07 株式会社リコー 半導体装置
US7005379B2 (en) * 2004-04-08 2006-02-28 Micron Technology, Inc. Semiconductor processing methods for forming electrical contacts
JP2005347466A (ja) * 2004-06-02 2005-12-15 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
KR100735521B1 (ko) * 2005-10-19 2007-07-04 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2008130918A (ja) 2006-11-22 2008-06-05 Denso Corp 半導体装置及び半導体装置の製造方法
EP2351378B1 (en) * 2008-11-26 2020-08-19 Thin Film Electronics ASA Random delay generation for thin-film transistor based circuits
JP5601566B2 (ja) 2010-01-28 2014-10-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2011253898A (ja) * 2010-06-01 2011-12-15 Nippon Telegr & Teleph Corp <Ntt> 半導体装置及び製造方法
JP2012119383A (ja) * 2010-11-29 2012-06-21 Renesas Electronics Corp 半導体装置およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130234292A1 (en) * 2012-03-07 2013-09-12 Ming-Te Wei Thin film resistor structure

Also Published As

Publication number Publication date
US9881868B2 (en) 2018-01-30
JP2015088585A (ja) 2015-05-07
JP6396653B2 (ja) 2018-09-26
TW201523822A (zh) 2015-06-16
EP2869343A3 (en) 2015-09-02
CN104600052A (zh) 2015-05-06
US20150115410A1 (en) 2015-04-30
KR20150050390A (ko) 2015-05-08
US20170365553A1 (en) 2017-12-21
EP2869343A2 (en) 2015-05-06

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