TWI639722B - IGZO sputtering target and IGZO film - Google Patents

IGZO sputtering target and IGZO film Download PDF

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Publication number
TWI639722B
TWI639722B TW103110077A TW103110077A TWI639722B TW I639722 B TWI639722 B TW I639722B TW 103110077 A TW103110077 A TW 103110077A TW 103110077 A TW103110077 A TW 103110077A TW I639722 B TWI639722 B TW I639722B
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TW
Taiwan
Prior art keywords
raw material
sputtering
phase
surface area
specific surface
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TW103110077A
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English (en)
Chinese (zh)
Other versions
TW201506182A (zh
Inventor
長田幸三
角田浩二
栗原敏也
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Jx日鑛日石金屬股份有限公司
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Publication of TW201506182A publication Critical patent/TW201506182A/zh
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Publication of TWI639722B publication Critical patent/TWI639722B/zh

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54Particle size related information
    • C04B2235/5409Particle size related information expressed by specific surface values
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54Particle size related information
    • C04B2235/5418Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658Atmosphere during thermal treatment
    • C04B2235/6583Oxygen containing atmosphere, e.g. with changing oxygen pressures
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/77Density
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/78Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/785Submicron sized grains, i.e. from 0,1 to 1 micron
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/78Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786Micrometer sized grains, i.e. from 1 to 100 micron
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80Phases present in the sintered or melt-cast ceramic products other than the main phase

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)
TW103110077A 2013-03-29 2014-03-18 IGZO sputtering target and IGZO film TWI639722B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013071170 2013-03-29
JPJP2013-071170 2013-03-29

Publications (2)

Publication Number Publication Date
TW201506182A TW201506182A (zh) 2015-02-16
TWI639722B true TWI639722B (zh) 2018-11-01

Family

ID=51623584

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103110077A TWI639722B (zh) 2013-03-29 2014-03-18 IGZO sputtering target and IGZO film

Country Status (5)

Country Link
JP (1) JP5883990B2 (ko)
KR (2) KR20150023832A (ko)
CN (1) CN105308208A (ko)
TW (1) TWI639722B (ko)
WO (1) WO2014156601A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016136611A1 (ja) * 2015-02-27 2016-09-01 Jx金属株式会社 酸化物焼結体及び該酸化物焼結体からなるスパッタリングターゲット
JP6125689B1 (ja) * 2016-03-31 2017-05-10 Jx金属株式会社 酸化インジウム−酸化亜鉛系(izo)スパッタリングターゲット
CN110770191B (zh) * 2018-04-18 2022-05-13 三井金属矿业株式会社 氧化物烧结体、溅射靶和氧化物薄膜的制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009157535A1 (ja) * 2008-06-27 2009-12-30 出光興産株式会社 InGaO3(ZnO)結晶相からなる酸化物半導体用スパッタリングターゲット及びその製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3862385B2 (ja) 1996-11-08 2006-12-27 Dowaホールディングス株式会社 酸化スズ含有酸化インジウム粉及び焼結体の製造方法
WO2006051995A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
JP4807331B2 (ja) 2007-06-18 2011-11-02 住友金属鉱山株式会社 酸化インジウム系スパッタリングターゲットの製造方法
JP5403390B2 (ja) 2008-05-16 2014-01-29 出光興産株式会社 インジウム、ガリウム及び亜鉛を含む酸化物
KR101346472B1 (ko) * 2008-06-06 2014-01-02 이데미쓰 고산 가부시키가이샤 산화물 박막용 스퍼터링 타겟 및 그의 제조 방법
JP5822198B2 (ja) * 2009-06-05 2015-11-24 Jx日鉱日石金属株式会社 酸化物焼結体、その製造方法及び酸化物焼結体製造用原料粉末
JP4875135B2 (ja) * 2009-11-18 2012-02-15 出光興産株式会社 In−Ga−Zn−O系スパッタリングターゲット
JP5690063B2 (ja) * 2009-11-18 2015-03-25 出光興産株式会社 In−Ga−Zn系酸化物焼結体スパッタリングターゲット及び薄膜トランジスタ
JP5591523B2 (ja) * 2009-11-19 2014-09-17 出光興産株式会社 長期成膜時の安定性に優れたIn−Ga−Zn−O系酸化物焼結体スパッタリングターゲット
JP5596963B2 (ja) * 2009-11-19 2014-09-24 出光興産株式会社 スパッタリングターゲット及びそれを用いた薄膜トランジスタ
JP4843083B2 (ja) 2009-11-19 2011-12-21 出光興産株式会社 In−Ga−Zn系酸化物スパッタリングターゲット
JP5437825B2 (ja) * 2010-01-15 2014-03-12 出光興産株式会社 In−Ga−O系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法
JP2012052227A (ja) * 2010-08-05 2012-03-15 Mitsubishi Materials Corp スパッタリングターゲットの製造方法およびスパッタリングターゲット
JP5767015B2 (ja) * 2011-05-10 2015-08-19 出光興産株式会社 薄膜トランジスタ
JP2014062316A (ja) * 2012-09-03 2014-04-10 Idemitsu Kosan Co Ltd スパッタリングターゲット

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009157535A1 (ja) * 2008-06-27 2009-12-30 出光興産株式会社 InGaO3(ZnO)結晶相からなる酸化物半導体用スパッタリングターゲット及びその製造方法

Also Published As

Publication number Publication date
KR20170023201A (ko) 2017-03-02
KR101973873B1 (ko) 2019-04-29
JP5883990B2 (ja) 2016-03-15
JPWO2014156601A1 (ja) 2017-02-16
WO2014156601A1 (ja) 2014-10-02
CN105308208A (zh) 2016-02-03
KR20150023832A (ko) 2015-03-05
TW201506182A (zh) 2015-02-16

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