TWI639722B - IGZO sputtering target and IGZO film - Google Patents
IGZO sputtering target and IGZO film Download PDFInfo
- Publication number
- TWI639722B TWI639722B TW103110077A TW103110077A TWI639722B TW I639722 B TWI639722 B TW I639722B TW 103110077 A TW103110077 A TW 103110077A TW 103110077 A TW103110077 A TW 103110077A TW I639722 B TWI639722 B TW I639722B
- Authority
- TW
- Taiwan
- Prior art keywords
- raw material
- sputtering
- phase
- surface area
- specific surface
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5409—Particle size related information expressed by specific surface values
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/785—Submicron sized grains, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
- C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013071170 | 2013-03-29 | ||
JPJP2013-071170 | 2013-03-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201506182A TW201506182A (zh) | 2015-02-16 |
TWI639722B true TWI639722B (zh) | 2018-11-01 |
Family
ID=51623584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103110077A TWI639722B (zh) | 2013-03-29 | 2014-03-18 | IGZO sputtering target and IGZO film |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5883990B2 (ko) |
KR (2) | KR20150023832A (ko) |
CN (1) | CN105308208A (ko) |
TW (1) | TWI639722B (ko) |
WO (1) | WO2014156601A1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016136611A1 (ja) * | 2015-02-27 | 2016-09-01 | Jx金属株式会社 | 酸化物焼結体及び該酸化物焼結体からなるスパッタリングターゲット |
JP6125689B1 (ja) * | 2016-03-31 | 2017-05-10 | Jx金属株式会社 | 酸化インジウム−酸化亜鉛系(izo)スパッタリングターゲット |
CN110770191B (zh) * | 2018-04-18 | 2022-05-13 | 三井金属矿业株式会社 | 氧化物烧结体、溅射靶和氧化物薄膜的制造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009157535A1 (ja) * | 2008-06-27 | 2009-12-30 | 出光興産株式会社 | InGaO3(ZnO)結晶相からなる酸化物半導体用スパッタリングターゲット及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3862385B2 (ja) | 1996-11-08 | 2006-12-27 | Dowaホールディングス株式会社 | 酸化スズ含有酸化インジウム粉及び焼結体の製造方法 |
WO2006051995A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
JP4807331B2 (ja) | 2007-06-18 | 2011-11-02 | 住友金属鉱山株式会社 | 酸化インジウム系スパッタリングターゲットの製造方法 |
JP5403390B2 (ja) | 2008-05-16 | 2014-01-29 | 出光興産株式会社 | インジウム、ガリウム及び亜鉛を含む酸化物 |
KR101346472B1 (ko) * | 2008-06-06 | 2014-01-02 | 이데미쓰 고산 가부시키가이샤 | 산화물 박막용 스퍼터링 타겟 및 그의 제조 방법 |
JP5822198B2 (ja) * | 2009-06-05 | 2015-11-24 | Jx日鉱日石金属株式会社 | 酸化物焼結体、その製造方法及び酸化物焼結体製造用原料粉末 |
JP4875135B2 (ja) * | 2009-11-18 | 2012-02-15 | 出光興産株式会社 | In−Ga−Zn−O系スパッタリングターゲット |
JP5690063B2 (ja) * | 2009-11-18 | 2015-03-25 | 出光興産株式会社 | In−Ga−Zn系酸化物焼結体スパッタリングターゲット及び薄膜トランジスタ |
JP5591523B2 (ja) * | 2009-11-19 | 2014-09-17 | 出光興産株式会社 | 長期成膜時の安定性に優れたIn−Ga−Zn−O系酸化物焼結体スパッタリングターゲット |
JP5596963B2 (ja) * | 2009-11-19 | 2014-09-24 | 出光興産株式会社 | スパッタリングターゲット及びそれを用いた薄膜トランジスタ |
JP4843083B2 (ja) | 2009-11-19 | 2011-12-21 | 出光興産株式会社 | In−Ga−Zn系酸化物スパッタリングターゲット |
JP5437825B2 (ja) * | 2010-01-15 | 2014-03-12 | 出光興産株式会社 | In−Ga−O系酸化物焼結体、ターゲット、酸化物半導体薄膜及びこれらの製造方法 |
JP2012052227A (ja) * | 2010-08-05 | 2012-03-15 | Mitsubishi Materials Corp | スパッタリングターゲットの製造方法およびスパッタリングターゲット |
JP5767015B2 (ja) * | 2011-05-10 | 2015-08-19 | 出光興産株式会社 | 薄膜トランジスタ |
JP2014062316A (ja) * | 2012-09-03 | 2014-04-10 | Idemitsu Kosan Co Ltd | スパッタリングターゲット |
-
2014
- 2014-03-11 CN CN201480002040.8A patent/CN105308208A/zh active Pending
- 2014-03-11 WO PCT/JP2014/056250 patent/WO2014156601A1/ja active Application Filing
- 2014-03-11 KR KR1020157001570A patent/KR20150023832A/ko active Application Filing
- 2014-03-11 JP JP2015508253A patent/JP5883990B2/ja active Active
- 2014-03-11 KR KR1020177004745A patent/KR101973873B1/ko active IP Right Grant
- 2014-03-18 TW TW103110077A patent/TWI639722B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009157535A1 (ja) * | 2008-06-27 | 2009-12-30 | 出光興産株式会社 | InGaO3(ZnO)結晶相からなる酸化物半導体用スパッタリングターゲット及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20170023201A (ko) | 2017-03-02 |
KR101973873B1 (ko) | 2019-04-29 |
JP5883990B2 (ja) | 2016-03-15 |
JPWO2014156601A1 (ja) | 2017-02-16 |
WO2014156601A1 (ja) | 2014-10-02 |
CN105308208A (zh) | 2016-02-03 |
KR20150023832A (ko) | 2015-03-05 |
TW201506182A (zh) | 2015-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI471441B (zh) | Oxide sintered body for sputtering and its manufacturing method | |
TWI541362B (zh) | In 2 O 3 -SnO 2 -ZnO sputtering target | |
TWI550110B (zh) | An oxide sintered body, a method for producing the same, and a raw material powder for producing an oxide sintered body | |
TWI410509B (zh) | A-IGZO oxide film | |
TWI480255B (zh) | Oxide sintered body and sputtering target | |
US20140102892A1 (en) | In2o3-zno sputtering target | |
KR101960233B1 (ko) | 스퍼터링 타겟 | |
TWI639722B (zh) | IGZO sputtering target and IGZO film | |
JP5681590B2 (ja) | スパッタリング用酸化物焼結体ターゲット及びその製造方法並びに前記ターゲットを用いた薄膜の形成方法及び薄膜形成方法 | |
TWI622568B (zh) | 氧化物燒結體及濺鍍用靶 | |
TW201638013A (zh) | 氧化物燒結體、濺鍍用靶、及使用其而得之氧化物半導體薄膜 | |
TW201439028A (zh) | Igzo濺鍍靶及igzo膜、以及igzo靶之製造方法 | |
KR20210082410A (ko) | 스퍼터링 타깃 부재 및 그 제조 방법 | |
CN114008237A (zh) | 溅射靶及溅射靶的制造方法 | |
JP2014073959A (ja) | 酸化物焼結体及びその製造方法 | |
JP6356290B2 (ja) | 酸化物焼結体及びその製造方法 | |
Itose et al. | In 2 O 3—SnO 2—ZnO sputtering target | |
KR20110074229A (ko) | 산화물 박막 트랜지스터용 스퍼터링 타겟의 제조방법 | |
JP2011093730A (ja) | 酸化物焼結体及びその製造方法 |