TWI638837B - 聚合物、正型光阻材料及圖案形成方法 - Google Patents
聚合物、正型光阻材料及圖案形成方法 Download PDFInfo
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- TWI638837B TWI638837B TW106117798A TW106117798A TWI638837B TW I638837 B TWI638837 B TW I638837B TW 106117798 A TW106117798 A TW 106117798A TW 106117798 A TW106117798 A TW 106117798A TW I638837 B TWI638837 B TW I638837B
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Classifications
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Abstract
本發明提供適合作為比起習知之正型光阻材料有更高的高解像度且線邊緣粗糙度小之正型光阻材料之基礎樹脂的聚合物、含有此聚合物之正型光阻材料、及使用此正型光阻材料之圖案形成方法。 一種聚合物,含有下式(a)表示之重複單元、下式(b)表示之重複單元、及下式(c)表示之重複單元,重量平均分子量為1,000~500,000;
式中,R1
為鹵素原子、羥基、直鏈狀或分支狀之碳數1~4之烷基、直鏈狀或分支狀之碳數1~4之烷氧基、或乙醯氧基;R2
為酸不安定基;R3
及R4
各自獨立地為鹵素原子、或碳數1~6之直鏈狀或分支狀之烷基;p為0或1;q及r各自獨立地0~4之整數。
Description
本發明係關於聚合物、正型光阻材料、及圖案形成方法。
伴隨LSI之高整合化與高速化,圖案規則之微細化正急速進展。已接近10nm節點邏輯器件的量產、針對DRAM的20nm以下之器件量產。它們是利用雙重圖案化ArF微影形成。又,也正探討波長13.5nm之極端紫外線(EUV)微影。
另一方面,快閃記憶體牽引著直到15nm的微細化,之後,移轉到利用立體疊層增加容量的3維記憶體。於此情形,為了將多段的疊層膜進行加工,需要超過10μm之超厚膜之加工技術。
ArF雙重圖案化微影中,伴隨遮罩片數增加,需要多數片遮罩之位置對準的精度增進、圖案尺寸之高精度化。在EUV微影用之遮罩,若形成比起ArF微影用更微細的圖案,各圖案也需高精度化。
遮罩圖案製作時,係利用電子束(EB)描繪實施光阻圖案形成。為了要提升EB描繪之產能,一般係使用化學增幅光阻。前述化學增幅光阻,例如將聚羥基苯乙烯之羥基之一部分取代成酸不安定基之聚合物作為基礎樹脂,並於其中摻合酸產生劑、控制酸擴散之淬滅劑、界面活性劑及有機溶劑而得者。化學增幅光阻有高感度化的好處,但另一方面,會有因酸擴散造成圖像模糊而導致解像度、圖案之精度下降的缺點。
隨著EB描繪獲致之光阻圖案之解像性改善,光阻圖案之縱橫比(aspect ratio)增加,因而會造成發生顯影後之淋洗乾燥時之應力導致發生圖案崩塌的問題。為了要防止此現象,光阻膜之薄膜化正進行中。伴隨於此,需增進乾蝕刻耐性,為了要增進光阻膜之乾蝕刻耐性,有人提出將聚羥基苯乙烯與茚(專利文獻1)、乙烯合萘(專利文獻2)共聚合而得之聚合物。藉由將茚、乙烯合萘進行共聚合,不只會增進乾蝕刻耐性,也有控制酸擴散的好處,也有助於增進解像性。
近年來,逐漸採用氧化膜系之硬遮罩作為遮罩基板,無需過度地提升光阻膜之乾蝕刻耐性。相較於提升乾蝕刻耐性,逐漸要求有解像性優異之光阻,除了解像性增進,近年來,邊緣粗糙度(LER、LWR)之減低變得重要起來。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2004-115630號公報
[專利文獻2]日本特開2006-169302號公報
[專利文獻3]日本特開2004-61794號公報
本發明有鑑於前述情事,目的在於提供適合作為比起習知之正型光阻材料更高解像度且邊緣粗糙度小之正型光阻材料之基礎樹脂的聚合物、使用該聚合物之正型光阻材料,尤其,適合i射線、ArF準分子雷射、EB、EUV曝光之正型光阻材料、及使用此材料之圖案形成方法。
本案發明人等為了獲得近年期待中的有高解像度且邊緣粗糙度小之正型光阻材料,努力研究,結果發現若使用含有特定重複單元之聚合物作為正型光阻材料之基礎樹脂,則極有效,乃完成本發明。
經酸不安定基部分取代而得之羥基苯乙烯與茚、乙烯合萘之共聚物,酸擴散控制優異,邊緣粗糙度減小,但仍需進一步增進性能。藉由將茚、乙烯合萘進行共聚合,主鏈變得剛直,聚合物之玻璃轉移點提高,藉此,酸擴散距離縮短。前述共聚物,相較於苯乙烯共聚物,酸擴散控制的效果更高。另一方面,茚、乙烯合萘是疏水性之芳香族化合物,所以,在聚合物內會混雜著羥基苯乙烯之親水性部分與疏水性部分,因為鹼顯影液之溶解性不均勻而造成膨潤,成為邊緣粗糙度劣化之原因。
專利文獻3記載之經酸不安定基部分取代而得之羥基苯乙烯與香豆素之共聚合聚合物,香豆素因有酯基,從而比起茚、乙烯合萘,疏水性較低,可抑制
在鹼顯影液中之膨潤,減低邊緣粗糙度。但是香豆素的聚合性低,所以難以將其均勻地導入到聚合物內,並未達到目標的邊緣粗糙度減低。
本案發明人等為了更抑制酸擴散,使鹼溶解均勻性增進並減小邊緣粗糙度而努力研究,結果發現到:藉由使用包含來自乙烯基蒽醌之重複單元、經酸不安定基取代之來自羥基苯乙烯之重複單元、及來自羥基苯乙烯之重複單元之聚合物作為正型光阻材料之基礎樹脂,則可獲得曝光前後之鹼溶解速度對比度高,抑制酸擴散之效果高,有高解像性,且曝光後之圖案形狀與邊緣粗糙度良好,尤其適合作為超LSI製造用或光罩之微細圖案形成材料的正型光阻材料。
乙烯基蒽醌和苯乙烯衍生物同樣有高聚合性,可對於聚合物內均勻地導入。因為有2個羰基而有適度的親水性,故聚合物內之親水性與疏水性之差距小,藉此,鹼溶解性會均勻化。2個羰基也有控制酸擴散的特性。藉由以上之特性,可獲得高解像度且邊緣粗糙度小之光阻圖案。
本發明之正型光阻材料,尤其製成光阻膜時之溶解對比度高,抑制酸擴散之效果高,有高解像性且有曝光餘裕度,處理適應性優異,曝光後之圖案形狀良好。因為有該等優良的特性,實用性極高,作為超LSI用光阻材料遮罩圖案形成材料非常有效。
亦即,本發明提供下列聚合物、正型光阻材料及圖案形成方法。
1.一種聚合物,含有下式(a)表示之重複單元、下式(b)表示之重複單元、及下式(c)表示之重複單元,重量平均分子量為1,000~500,000;【化1】
式中,R1為鹵素原子、羥基、直鏈狀或分支狀之碳數1~4之烷基、直鏈狀或分支狀之碳數1~4之烷氧基、或乙醯氧基;R2為酸不安定基;R3及R4各自獨立地為鹵素原子、或碳數1~6之直鏈狀或分支狀之烷基;p為0或1;q及r各自獨立地0~4之整數。
2.如1.之聚合物,更含有下式(d)表示之重複單元d;
式中,RA為甲基或氫原子;R11為酸不安定基;X為單鍵、酯基、碳數3~12之含內酯環之連結基、伸苯基、或伸萘基。
3.如1.或2.之聚合物,更含有選自於下式(f1)~(f3)表示之重複單元中之至少1種;
式中,RA各自獨立地為氫原子或甲基;R21為單鍵、伸苯基、-O-R31-、或-C(=O)-Z1-R31-,Z1為-O-或-NH-,R31為直鏈狀、分支狀之碳數1~6之伸烷基或環狀之碳數3~6之伸烷基、直鏈狀、分支狀之碳數2~6之伸烯基或環狀之碳數3~6之伸烯基、或伸苯基,也可以含有羰基、酯基、醚基或羥基;Rf1~Rf4各自獨立地為氟原子、氫原子或三氟甲基,但Rf1~Rf4中之至少一者為氟原子;R22~R29各自獨立地為也可以含有羰基、酯基或醚基之直鏈狀、分支狀或環狀之碳數1~12之烷基、碳數6~12之芳基、碳數7~20之芳烷基、或巰基苯基;Y1為單鍵、或也可含有酯基之碳數1~12之連結基、也可含有醚基之碳數2~12之連結基或也可含有內酯環之碳數3~12之連結基;Y2為單鍵、亞甲基、伸乙基、伸苯基、氟化伸苯基、-O-R32-、或-C(=O)-Z2-R32-,Z2為-O-或-NH-,R32為直鏈狀、分支狀之碳數1~6之伸烷基或環狀之碳數3~6之伸烷基、伸苯基、或直鏈狀、分支狀之碳數2~6之伸烯基或環狀之碳數3~6之伸烯基,也可以含有羰基、酯基、醚基或羥基;M-為非親核性相對離子。
4.一種正型光阻材料,包含含有如1.至3.中任一項之聚合物之基礎樹脂。
5.如4.之正型光阻材料,係更含有有機溶劑及酸產生劑之化學增幅光阻材料。
6.如4.或5.之正型光阻材料,更含有鹼性化合物。
7.如4.至6.中任一項之正型光阻材料,更含有界面活性劑。
8.一種圖案形成方法,包括以下步驟:將如4.至7.中任一項之正型光阻材料塗佈在基板上,進行加熱處理而形成光阻膜;將該光阻膜利用高能射線進行曝光;及使用顯影液將已曝光之光阻膜進行顯影。
9.如8.之圖案形成方法,其中,該基板為空白光罩。
10.如8.或9.之圖案形成方法,其中,該高能射線為波長180~400nm之紫外線。
11.如8.或9.之圖案形成方法,其中,該高能射線為電子束或波長3~15nm之極端紫外線。
12.一種空白光罩,塗佈有如4.至7.中任一項之正型光阻材料。
含有本發明之聚合物之正型光阻材料,曝光前後之鹼溶解速度對比度大幅提高,有高解像性,且曝光後之圖案形狀與線邊緣粗糙度良好,此外,尤其可抑制酸擴散速度。因此,特別適合作為超LSI製造用或光罩之微細圖案形成材料、EUV曝光用、ArF準分子雷射曝光用之圖案形成材料。又,本發明之正型光阻材料,不只可以應用在半導體電路形成之微影,也可應用在遮罩電路圖案之形成、或微型機器、薄膜磁頭電路形成等。
[聚合物]
本發明之聚合物含有下式(a)表示之重複單元(以下稱為重複單元a。)、下式(b)表示之重複單元(以下稱為重複單元b。)、及下式(c)表示之重複單元(以下稱為重複單元c。),且重量平均分子量(Mw)為1,000~500,000。
式中,R1為鹵素原子、羥基、直鏈狀或分支狀之碳數1~4之烷基、直鏈狀或分支狀之碳數1~4之烷氧基、或乙醯氧基。R2為酸不安定基。R3及R4各自獨立地為鹵素原子、或碳數1~6之直鏈狀或分支狀之烷基。p為0或1。q及r各自獨立地為0~4之整數。
用以獲得重複單元a之單體可列舉如下但不限於此等。
用以獲得重複單元b之單體可列舉如下但不限於此等。又,下式中,R2同前述。
用以獲得重複單元c之單體可列舉如下但不限於此等。
本發明之聚合物中,為了增進溶解對比度,也可更含有下式(d)表示之具有經酸不安定基取代之羧基之重複單元d。
式中,RA為甲基或氫原子。R11為酸不安定基。X為單鍵、酯基、碳數3~12之含內酯環之連結基、伸苯基、或伸萘基。前述碳數3~12之含內酯環之連結基,例如可列舉如下。
R2及R11表示之酸不安定基不特別限定,宜為下式(A-1)~(A-3)表示之基較佳。
式(A-1)中,RL1為碳數4~20,較佳為4~15之3級烷基、碳數1~6之三烷基矽基、碳數4~20之側氧基烷基、或式(A-3)表示之基。前述3級烷基具體而言可列舉第三丁基、第三戊基、1,1-二乙基丙基、1-乙基環戊基、1-丁基環戊基、1-乙基環己基、1-丁基環己基、1-乙基-2-環戊烯基、1-乙基-2-環己烯基、2-甲基-2-金剛烷基等。前述三烷基矽基具體而言可列舉三甲基矽基、三乙基矽基、二甲基-第三丁基矽基等。前述側氧基烷基具體而言可列舉3-側氧基環己基、4-甲基-2-側氧基烷-4-基、5-甲基-2-側氧基四氫呋喃-5-基等。A1為0~6之整數。
式(A-1)表示之酸不安定基具體而言可列舉第三丁氧基羰基、第三丁氧基羰基甲基、第三戊氧基羰基、第三戊氧基羰基甲基、1,1-二乙基丙氧基羰基、1,1-二乙基丙氧基羰基甲基、1-乙基環戊氧基羰基、1-乙基環戊氧基羰基甲基、1-乙基-2-環戊烯氧基羰基、1-乙基-2-環戊烯氧基羰基甲基、1-乙氧基乙氧基羰基甲基、2-四氫哌喃氧基羰基甲基、2-四氫呋喃氧基羰基甲基等。
又,式(A-1)表示之酸不安定基也宜使用下式(A-1)-1~(A-1)-10表示之基。
【化11】
式中,RL8各自獨立地為碳數1~10之直鏈狀、分支狀或環狀之烷基、或碳數6~20之芳基。RL9為氫原子、或碳數1~10之直鏈狀、分支狀或環狀之烷基。RL10為碳數2~10之直鏈狀、分支狀或環狀之烷基、或碳數6~20之芳基。A1同前述。
式(A-2)中,RL2及RL3各自獨立地為氫原子、或碳數1~18,較佳為1~10之直鏈狀、分支狀或環狀之烷基。前述烷基具體而言可列舉甲基、乙基、丙基、異丙基、正丁基、第二丁基、第三丁基、環戊基、環己基、2-乙基己基、正辛基等。RL4為碳數1~18,較佳為碳數1~10之也可以有氧原子等雜原子之1價烴基。前述1價烴基具體而言可列舉直鏈狀、分支狀或環狀之烷基、及前述烷基之氫原子之一部分取代成羥基、烷氧基、側氧基、胺基、烷胺基等之基,該取代烷基具體而言可列舉下列基等。
RL2及RL3、RL2及RL4、或RL3及RL4亦可互相鍵結並和它們所鍵結之碳原子一起形成環,形成環時,涉及環形成之RL2及RL3、RL2及RL4、或RL3及RL4各為碳數1~18,較佳為碳數1~10之直鏈狀或分支狀之伸烷基,環之碳數較佳為3~10,更佳為4~10。
式(A-2)表示之酸不安定基之中,直鏈狀或分支狀者可列舉下式(A-2)-1~(A-2)-75表示之基,但不限定於此等。
【化15】
【化16】
式(A-2)表示之酸不安定基中,環狀者可列舉四氫呋喃-2-基、2-甲基四氫呋喃-2-基、四氫哌喃-2-基、2-甲基四氫哌喃-2-基等。
又,酸不安定基可列舉下式(A-2a)或(A-2b)表示之基。也可利用前述酸不安定基將基礎聚合物進行分子間或分子內交聯。
【化17】
式(A-2a)及(A-2b)中,RL11及RL12各自獨立地為氫原子、或碳數1~8之直鏈狀、分支狀或環狀之烷基。RL11及RL12亦可互相鍵結並和它們所鍵結之碳原子一起形成環,形成環時涉及環之形成之RL11及RL12各為碳數1~8之直鏈狀或分支狀之伸烷基。RL13各自獨立地為碳數1~10之直鏈狀、分支狀或環狀之伸烷基。A為(C1+1)價之碳數1~50之脂肪族或脂環族飽和烴基、芳香族烴基、或雜環基,在該等基之一部分碳原子間也可插入含有氧原子、硫原子、氮原子等雜原子之基,或於其碳原子鍵結之氫原子之一部分也可取代為羥基、羧基、醯基或氟原子。B為-CO-O-、-NHCO-O-或-NHCONH-。B1及D1各自獨立地為0~10,較佳為0~5之整數。C1為1~7,較佳為1~3之整數。
又,A為2~4價之碳數1~20之直鏈狀、分支狀或環狀之伸烷基、烷三基、烷四基、碳數6~30之伸芳基較佳,該等基之一部分之碳原子間也可插入含有氧原子、硫原子、氮原子等雜原子之基,又於此碳原子鍵結之氫原子之一部分也可取代為羥基、羧基、醯基或鹵素原子。
式(A-2a)及(A-2b)表示之交聯型縮醛基具體而言可列舉下式(A-2)-76~(A-2)-83表示之基。
【化18】
式(A-3)中,RL5、RL6及RL7各自獨立地為碳數1~20之直鏈狀、分支狀或環狀之烷基等1價烴基,也可以含有氧、硫、氮、氟等雜原子。又,RL5及RL6、RL5及RL7、或RL6及RL7亦可互相鍵結並和它們所鍵結之碳原子一起形成環,形成環時涉及環之形成之RL5及RL6、RL5及RL7、或RL6及RL7,各為碳數1~20之直鏈狀或分支狀之伸烷基,環之碳數較佳為3~20。
式(A-3)表示之3級烷基可列舉第三丁基、三乙基香芹基(triethylcarvyl)、1-乙基降莰基、1-甲基環己基、1-乙基環戊基、2-(2-甲基)金剛烷基、2-(2-乙基)金剛烷基、第三戊基等。
又,式(A-3)表示之3級烷基也宜使用下式(A-3)-1~(A-3)-18表示之基。
式(A-3)-1~(A-3)-18中,RL14各自獨立地為碳數1~8之直鏈狀、分支狀或環狀之烷基、或碳數6~20之苯基、萘基等芳基。RL15及RL17各自獨立地為氫原子、或碳數1~20之直鏈狀、分支狀或環狀之烷基。RL16為碳數6~20之苯基等芳基。
又,酸不安定基可列舉下式(A-3)-19或(A-3)-20表示之基。也可利用前述酸不安定基將聚合物進行分子內或分子間交聯。
式中,RL14同前述。RL18為碳數1~20之直鏈狀、分支狀或環狀之(E1+1)價之脂肪族烴基、或碳數6~20之(E1+1)價之芳香族烴基,也可含有氧原子、硫原子、氮原子等雜原子。E1為1~3之整數。
重複單元d較佳為例如下式(d)-1表示之含外向體結構之來自(甲基)丙烯酸酯者。
式中,RA同前述。RLc1為碳數1~8之直鏈狀、分支狀或環狀之烷基、或也可經取代之碳數6~20之芳基。RLc2~RLc7、RLc10及RLc11各自獨立地為氫原子、或碳數1~15之也可含有雜原子之1價烴基。RLc8及RLc9為氫原子。RLc2與RLc3、RLc4與RLc6、RLc4與RLc7、RLc5與RLc7、RLc5與RLc11、RLc6與RLc10、RLc8與RLc9或RLc9與RLc10,也可以互相鍵結並和它們所鍵結之碳原子一起形成環,於此情形,涉及鍵結之基為碳數1~15之也可以含有雜原子之2價烴基。又,RLc2與RLc11、RLc8與RLc11、或RLc4與RLc6,也可鍵結於相鄰之碳原子者彼此直接鍵結並形成雙鍵。又,依本式,也表示鏡像體。
作為給予式(d)-1表示之重複單元之單體,可列舉日本特開2000-327633號公報記載者等。具體而言,可列舉如下但不限於此等。又,下式中,RA同前述。
重複單元d也宜為下式(d)-2表示之含有呋喃二基、四氫呋喃二基或氧雜降莰烷二基之來自(甲基)丙烯酸酯者。
【化23】
式中,RA同前述。RLc12及RLc13各自獨立地為碳數1~10之直鏈狀、分支狀或環狀之1價烴基。RLc12與RLc13也可互相鍵結並和它們所鍵結之碳原子一起形成脂環。RLc14為呋喃二基、四氫呋喃二基、或氧雜降莰烷二基。RLc15為氫原子、或也可以含有雜原子之碳數1~10之直鏈狀、分支狀或環狀之1價烴基。
作為給予式(d)-2表示之重複單元之單體可列舉如下但不限於此等。又,下式中,RA同前述,Ac表示乙醯基,Me表示甲基。
【化24】
【化25】
本發明之聚合物也可包含含有選自羥基、內酯環、醚基、酯基、羰基及氰基中之密合性基之重複單元e。給予重複單元e之單體可列舉如下但不限於此等。又,下式中,RA同前述。
【化26】
【化27】
【化28】
【化29】
【化31】
【化32】
【化33】
為含有羥基之單體時,聚合時可先將羥基利用乙氧基乙氧基等容易利用酸脫保護之縮醛基取代,於聚合後利用弱酸與水進行脫保護,也可先以乙醯基、甲醯基、三甲基乙醯基等取代,聚合後進行鹼水解。
本發明之聚合物,也可以含有來自含聚合性烯烴之鎓鹽之重複單元f。日本特開平4-230645號公報、日本特開2005-84365號公報、日本特開2006-045311號公報,提供具有會產生特定磺酸之聚合性烯烴之鋶鹽、錪鹽。日本特開2006-178317號公報提出磺酸直接鍵結在主鏈的鋶鹽。
就理想的重複單元f而言,可列舉下式(f1)表示之重複單元(以下稱為重複單元f1)、下式(f2)表示之重複單元(以下稱為重複單元f2)、及下式(f3)表示之重複單元(以下稱為重複單元f3)。又,重複單元f1~f3可單獨使用1種,也可組合使用2種以上。
【化34】
式中,RA各自獨立地為氫原子或甲基。R21為單鍵、伸苯基、-O-R31-、或-C(=O)-Z1-R31-,Z1為-O-或-NH-,R31為直鏈狀、分支狀之碳數1~6之伸烷基或環狀之碳數3~6之伸烷基、直鏈狀、分支狀之碳數2~6之伸烯基或環狀之碳數3~6之伸烯基、或伸苯基,也可以含有羰基、酯基、醚基或羥基。Rf1~Rf4各自獨立地為氟原子、氫原子或三氟甲基,但Rf1~Rf4中之至少一者為氟原子。R22~R29各自獨立地為也可含有羰基、酯基或醚基之直鏈狀、分支狀或環狀之碳數1~12之烷基、碳數6~12之芳基、碳數7~20之芳烷基、或巰基苯基。Y1為單鍵、或也可含有酯基之碳數1~12之連結基、也可含有醚基之碳數2~12之連結基或也可含有內酯環之碳數3~12之連結基。Y2為單鍵、亞甲基、伸乙基、伸苯基、氟化伸苯基、-O-R32-、或-C(=O)-Z2-R32-,Z2為-O-或-NH-,R32為直鏈狀、分支狀之碳數1~6之伸烷基或環狀之碳數3~6之伸烷基、伸苯基、或直鏈狀、分支狀之碳數2~6之伸烯基或環狀之碳數3~6之伸烯基,也可以含有羰基、酯基、醚基或羥基。M-為非親核性相對離子。
M-表示之非親核性相對離子可以列舉氯化物離子、溴化物離子等鹵化物離子;三氟甲磺酸根、1,1,1-三氟乙烷磺酸根、九氟丁烷磺酸根等氟烷基磺酸根;甲苯磺酸根、苯磺酸根、4-氟苯磺酸根、1,2,3,4,5-五氟苯磺酸根等芳基磺酸根;甲磺酸根、丁烷磺酸根等烷基磺酸根;雙(三氟甲基磺醯基)醯亞胺、雙(全氟乙
基磺醯基)醯亞胺、雙(全氟丁基磺醯基)醯亞胺等醯亞胺酸;參(三氟甲基磺醯基)甲基化物、參(全氟乙基磺醯基)甲基化物等甲基化酸。
前述非親核性相對離子可更舉例下式(K-1)表之α位經氟取代之磺酸離子、下式(K-2)表示之α及β位經氟取代之磺酸離子等。
式(K-1)中,R101為氫原子、直鏈狀、分支狀或環狀之碳數1~30之烷基、直鏈狀、分支狀或環狀之碳數2~30之醯基、直鏈狀、分支狀或環狀之碳數2~20之烯基、碳數6~20之芳基、或芳氧基,也可以含有醚基、酯基、羰基、內酯環、內醯胺環、磺內酯環、胺基、碸基、磺酸酯基、碳酸酯基、羥基、硫醇基、羧基、胺甲酸酯基、醯胺基、醯亞胺基。
式(K-2)中,R102為氫原子、直鏈狀、分支狀或環狀之碳數1~30之烷基、直鏈狀、分支狀或環狀之碳數2~30之醯基、直鏈狀、分支狀或環狀之碳數2~20之烯基、碳數6~20之芳基、或芳氧基,也可以含有醚基、酯基、羰基、內酯環、內醯胺環、磺內酯環、胺基、碸基、磺酸酯基、碳酸酯基、羥基、硫醇基、羧基、胺甲酸酯基、醯胺基、醯亞胺基。R103為氫原子、甲基、乙基或三氟甲基。
重複單元f作為酸產生劑的作用。藉由使酸產生劑鍵結在聚合物主鏈,酸擴散減小,可防止因為酸擴散的模糊導致解像性下降。又,藉由酸產生劑均勻分散,邊緣粗糙度改善。
本發明之聚合物中,重複單元a~f之比例分別為0<a<1.0、0<b<1.0、0<c<1.0、0≦d≦0.7、0≦e≦0.7及0≦f≦0.3較理想,0.03≦a≦0.5、0.05≦b≦0.6、0.1≦c≦0.9、0≦d≦0.6、0≦e≦0.6及0≦f≦0.25更佳,0.05≦a≦0.4、0.1≦b≦0.5、0.2≦c≦0.8、0≦d≦0.5、0≦e≦0.5及0≦f≦0.2更理想。又,重複單元f為選自重複單元f1~f3中之至少1種時,f=f1+f2+f3。又,a+b+c+d+e+f≦1。又,例如:a+b+c=1,係指含有重複單元a、b及c之聚合物中,重複單元a、b及c之合計量為全不重複單元中之100莫耳%,a+b+c<1,係指重複單元a、b及c之合計量為全部重複單元中之未達100莫耳%,且除了重複單元a、b及c以外尚含有其他重複單元。
本發明之聚合物,Mw為1,000~500,000,較佳為2,000~30,000。Mw若太小,光阻材料的耐熱性不佳,若太大,鹼溶解性降低,圖案形成後易發生拖尾現象。又,Mw,係使用四氫呋喃(THF)作為溶劑之凝膠滲透層析(GPC)獲得的聚苯乙烯換算測定值。
又,本發明之聚合物的分子量分布(Mw/Mn)廣時,因存在低分子量、高分子量的聚合物,曝光後會有在圖案上出現異物,或圖案之形狀惡化之虞。伴隨圖案規則微細化,Mw、分子量分布之影響易增大,故為了獲得適合微細的圖案尺寸使用的光阻材料,本發明之聚合物之分子量分布為1.0~2.0,尤其1.0~1.5之窄分散較佳。
為了合成本發明之聚合物,例如可將給予重複單元a~f之單體中之所望單體於有機溶劑中,添加自由基聚合起始劑並進行加熱聚合。
聚合時使用之有機溶劑可列舉甲苯、苯、四氫呋喃、二乙醚、二烷等。聚合起始劑可列舉2,2'-偶氮雙異丁腈(AIBN)、2,2'-偶氮雙(2,4-二甲基戊腈)、2,2-偶氮雙(2-甲基丙酸)二甲酯、過氧化苯甲醯、過氧化月桂醯等。聚合時之溫度較佳為50-80℃。反應時間較佳為2~100小時,更佳為5~20小時。
將羥基苯乙烯、羥基乙烯基萘進行共聚合時,也可將羥基苯乙烯、羥基乙烯基萘替換為使用乙醯氧基苯乙烯、乙醯氧基乙烯基萘,於聚合後利用前述鹼水解將乙醯氧基進行脫保護成羥基苯乙烯、羥基乙烯基萘。
鹼水解時之鹼可使用氨水、三乙胺等。又,反應溫度較佳為-20~100℃,更佳為0~60℃。反應時間較佳為0.2~100小時,更佳為0.5~20小時。
本發明之聚合物適合作為正型光阻材料之基礎樹脂。
[正型光阻材料]
本發明之正型光阻材料包含含有前述聚合物之基礎樹脂。使用前述聚合物作為正型光阻材料之基礎樹脂使用時,前述基礎樹脂也可為將組成比率、分子量分布、分子量不同的2種以上之前述聚合物摻混而得者。
本發明之正型光阻材料,宜因應目的更適當組合含有有機溶劑、酸產生劑、溶解控制劑、鹼性化合物、界面活性劑等較佳。藉由依此方式構成正型光阻材料,在曝光部,前述聚合物因為觸媒反應而加快對於顯影液之溶解速度,故能成為極高感度之正型光阻材料。所以,光阻膜之溶解對比度及解像性高,有曝光餘裕度,處理適應性優異,曝光後之圖案形狀良好,且呈現更優良的蝕刻耐性,尤其可抑制酸擴散,故疏密尺寸差小,因此實用性高,作為超LSI用光阻材料非常有效。尤其,若使其含有酸產生劑並製成利用酸觸媒反應之化學增幅正型光阻材料,能成為更高感度者,而且各種特性更優良,極為有用。
前述有機溶劑可列舉在日本特開2008-111103號公報之段落[0144]~[0145]記載之環己酮、甲基-2-正戊酮等酮類、3-甲氧基丁醇、3-甲基-3-甲氧基丁醇、1-甲氧基-2-丙醇、1-乙氧基-2-丙醇等醇類、丙二醇單甲醚、乙二醇單甲醚、丙二醇單乙醚、乙二醇單乙醚、丙二醇二甲醚、二乙二醇二甲醚等醚類、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、乳酸乙酯、丙酮酸乙酯、乙酸丁酯、3-甲氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙酸第三丁酯、丙酸第三丁酯、丙二醇單第三丁醚乙酸酯等酯類、γ-丁內酯等內酯類、及該等之混合溶劑。前述有機溶劑之摻合量,相對於基礎樹脂100質量份為50~10,000質量份較理想,100~5,000質量份更理想。
本發明之正型光阻材料,也可含有為了使化學增幅正型光阻材料有作用的酸產生劑。前述酸產生劑可列舉感應活性光線或放射線而產生酸之化合物(光酸產生劑)。光酸產生劑之成分只要是因高能射線照射而產生酸之化合物皆可使用。理想的光酸產生劑有鋶鹽、錪鹽、磺醯基重氮甲烷、N-磺醯氧基醯亞胺、肟-O-磺酸酯型酸產生劑等。可將它們中的1種單獨使用,或組合使用2種以上。
酸產生劑之具體例可列舉日本特開2008-111103號公報之段落[0122]~[0142]記載者。酸產生劑之摻合量,相對於基礎樹脂100質量份為0.01~100質量份較理想,0.1~80質量份更理想。
本發明之正型光阻材料也可以含有溶解控制劑。藉由摻合溶解控制劑,可進一步加大曝光部與未曝光部之溶解速度之差距,能更為增進解像度。溶解控制劑之具體例可列舉日本特開2008-122932號公報之段落[0155]~[0178]記載者。溶解控制劑之摻合量,相對於基礎樹脂100質量份為0~50質量份較理想,0~40質量份更理想。
本發明之正型光阻材料也可以含有鹼性化合物。藉由摻合鹼性化合物,例如能抑制酸在光阻膜中之擴散速度,更為增進解像度。鹼性化合物可列舉在日本特開2008-111103號公報之段落[0146]~[0164]記載之1級、2級或3級胺化合物,尤其具有羥基、醚基、酯基、內酯環、氰基、磺酸酯基之胺化合物、日本專利第3790649號公報記載之具有胺甲酸酯基之化合物。又,鹼性化合物也可列舉在日本特開2008-239918號公報記載之聚合物型之淬滅劑。其藉由配向在塗佈後之光阻表面,可以提高圖案化後之光阻之矩形性。聚合物型淬滅劑,也有可防止採用浸潤曝光用之保護膜時之圖案之膜損失、圖案頂部變圓的效果。鹼性化合物之摻合量,相對於基礎樹脂100質量份為0~100質量份較理想,0.001~50質量份更理想。
本發明之正型光阻材料也可含有界面活性劑。藉由摻合界面活性劑,能更增進或控制光阻材料之塗佈性。
界面活性劑之具體例可列舉日本特開2008-111103號公報之段落[0165]~[0166]記載者。界面活性劑之摻合量,相對於基礎樹脂100質量份為0~10質量份較理想,0.0001~5質量份更理想。
本發明之光阻材料可更含有乙炔醇類。
乙炔醇類可列舉日本特開2008-122932號公報之段落[0179]~[0182]記載者。乙炔醇類之摻合量,相對於基礎樹脂100質量份宜為0~5質量份較佳。
[圖案形成方法]
本發明之正型光阻材料使用在各種積體電路製造時,可採用公知之微影技術。
例如將本發明之正型光阻材料利用旋塗、輥塗、流塗、浸塗、噴塗、刮刀塗佈等適當的塗佈方法塗佈在積體電路製造用之基板(Si、SiO2、SiN、SiON、TiN、WSi、BPSG、SOG、有機抗反射膜等)或遮罩電路製造用之基板(Cr、CrO、CrON、MoSi等)上,使塗佈膜厚成為0.01~2.0μm。將其於熱板上,較佳為於60~150℃進行10秒~30分鐘,更佳為於80~120℃進行30秒~20分鐘預烘。其次,利用紫外線、遠紫外線、EB、EUV、X射線、軟X射線、準分子雷射、γ線、同步加速器放射線等高能射線,通過預定之遮罩或直接進行目的圖案之曝光。曝光量,以成為1~200mJ/cm2左右,尤其10~100mJ/cm2左右,或0.1~100μC/cm2左右,尤其0.5~50μC/cm2左右的方式進行曝光較佳。然後於熱板上,較佳為於60~150℃進行10秒~30分鐘,更佳為於80~120℃進行30秒~20分鐘曝光後烘烤(PEB)。
也可在光阻膜之上設置聚噻吩、聚苯胺系的抗靜電膜,也可形成除此以外的之面塗膜。
宜使用0.1~5質量%,更佳為2~10質量%之四甲基氫氧化銨(TMAH)、四乙基氫氧化銨(TEAH)、四丙基氫氧化銨(TPAH)、四丁基氫氧化銨(TBAH)等鹼水溶液之顯影液,進行3秒~3分鐘,較佳為5秒~2分鐘之利用浸漬(dip)法、浸置(puddle)法、噴塗(spray)法等常法所為之顯影,藉此,在基板上形成已照光之部分溶於顯影液,未曝光之部分不溶解之目的正型圖案。又,本發明之光阻材料,尤其適合利用高能射線中之EB、EUV、軟X射線、X射線、γ線、同步加速器放射線所為之微細圖案化。
相較於一般廣泛使用之TMAH水溶液,烷基鏈較長的TEAH、TPAH及TBAH,有使顯影中之膨潤減小而防止圖案崩塌的效果。日本專利第3429592號公報,例示為了將含有如金剛烷甲基丙烯酸酯之類之含脂環結構之重複單元與含有如甲基丙烯酸第三丁酯之類之酸不安定基之重複單元,無親水性基而撥水性高之聚合物進行顯影,採用了TBAH水溶液之例。
TMAH顯影液最常使用2.38質量%之水溶液。其相當於0.26N,宜和TEAH、TPAH或TBAH水溶液為同樣當量濃度度較佳。成為0.26N之TEAH、TPAH及TBAH之濃度分別是3.84質量%、5.31質量%及6.78質量%。
利用EB或EUV解像之32nm以下之圖案中,會發生線扭轉、或線彼此纏結、纏結的線崩塌的現象。據認為是因為在顯影液中膨潤而漲大的線彼此纏結的原故。膨潤的線含有顯影液而像海綿般柔軟,所以容易因為淋洗的應力而崩塌。
含有烷基鏈較長之TEAH、TPAH及TBAH之顯影液,有防止膨潤而防止圖案崩塌之效果。
[實施例]
以下舉實施例及比較例對於本發明具體說明,但是本發明不限於下列實施例。又,Mw,係使用THF作為溶劑之GPC獲得的聚苯乙烯換算測定值。又,下列例用之PAG單體1~4如下。
[1]聚合物之合成
[實施例1-1]聚合物1之合成
於2L燒瓶中添加2-乙烯基蒽醌4.5g、4-乙醯氧基苯乙烯13.0g、作為溶劑之THF40g。將此反應容器於氮氣環境下冷卻到-70℃,重複進行減壓脫氣、吹氮3次。升溫至室溫後,添加作為聚合起始劑之偶氮雙異丁腈(AIBN)1.2g,升溫到60℃後,進行15小時反應。
於此反應溶液中,邊攪拌邊滴加甲醇10g及水2g之混合溶液,30分鐘後將下層(聚合物層)進行減壓濃縮,並將此聚合物層再溶解於甲醇50g及THF50g之混合溶劑,於其中加入三乙胺2g及水3g,升溫到60℃,進行40小時脫保護反應。於獲得之聚合物溶液中加入乙酸5g並中和,將反應溶液濃縮後,溶於丙酮50g,添加到水100g,使聚合物沉澱,進行分濾、乾燥,獲得白色聚合物。利用1H-NMR及GPC分析獲得之聚合物,結果共聚合組成比係2-乙烯基蒽醌:羥基苯乙烯=20:80,Mw=6,000,分子量分布(Mw/Mn)=1.63。
使(2-甲基-1-丙烯基)-8-三環[5.2.1.02,6]癸醚5g於酸性條件下和獲得之聚合物10g反應,經過中和、分液處理、晶析步驟,獲得聚合物1。聚合物1之組成係利用13C-NMR及1H-NMR確認,Mw及Mw/Mn利用GPC確認。
[實施例1-2]聚合物2之合成
將(2-甲基-1-丙烯基)-8-三環[5.2.1.02,6]癸醚替換為使用(2-甲基-1-丙烯基)-2-金剛烷醚5.2g,除此以外依和實施例1-1同樣的方法進行合成,獲得聚合物2。聚合物2之組成係利用13C-NMR及1H-NMR確認,Mw及Mw/Mn利用GPC確認。
【化38】
[實施例1-3]聚合物3之合成
於2L燒瓶中添加2-乙烯基蒽醌4.5g、4-(甲基環戊氧基)苯乙烯3.0g、甲基丙烯酸3-乙基-3-外向四環[4.4.0.12,5.17,10]十二酯2.7g、4-羥基苯乙烯4.8g、甲基丙烯酸3-側氧基-2,7-二氧雜三環[4.2.1.04,8]壬烷-9-酯3.4g、及作為溶劑之THF40g。將此反應容器於氮氣環境下冷卻到-70℃,重複3次減壓脫氣、吹氮。升溫至室溫後,添加作為聚合起始劑之AIBN1.2g,升溫到60℃後,進行15小時反應。將此反應溶液濃縮成1/2,添加到甲醇1L及水0.1L之混合溶劑,結果有白色固體沉澱。將獲得之白色固體分濾後,以60℃進行減壓乾燥,獲得聚合物3。聚合物3之組成利用13C-NMR及1H-NMR確認,Mw及Mw/Mn利用GPC確認。
[實施例1-4]聚合物4之合成
於2L燒瓶中添加2-乙烯基蒽醌4.5g、4-(乙基環戊氧基)苯乙烯6.5g、4-羥基苯乙烯4.8g、7.8g之PAG單體1、及作為溶劑之THF40g。將此反應容器於氮氣環境下冷卻到-70℃,重複3次減壓脫氣、吹氮。升溫至室溫後,添加作為聚合起始劑
之AIBN1.2g,升溫到60℃後,進行15小時反應。將此反應溶液濃縮到1/2,添加到甲醇1L及水0.1L之混合溶劑,結果有白色固體沉澱。將獲得之白色固體分濾後,於60℃進行減壓乾燥,獲得聚合物4。聚合物4之組成係利用13C-NMR及1H-NMR確認,Mw及Mw/Mn係利用GPC確認。
[實施例1-5]聚合物5之合成
於2L燒瓶中添加2-乙烯基蒽醌4.5g、3-氟-4-(甲基環己氧基)苯乙烯7.0g、4-羥基苯乙烯4.8g、PAG單體25.9g、及作為溶劑之THF40g。將此反應容器於氮氣環境下冷卻到-70℃,重複3次減壓脫氣、吹氮。升溫至室溫後,添加作為聚合起始劑之AIBN1.2g,升溫到60℃後,進行15小時反應。將此反應溶液濃縮成1/2,添加到甲醇1L及水0.1L之混合溶劑,結果有白色固體沉澱。將獲得之白色固體分濾後,於60℃進行減壓乾燥,獲得聚合物5。聚合物5之組成係利用13C-NMR及1H-NMR確認,Mw及Mw/Mn利用GPC確認。
【化41】
[實施例1-6]聚合物6之合成
於2L燒瓶中添加2-乙烯基蒽醌4.5g、3-氟-4-(甲基環己氧基)苯乙烯5.2g、4-羥基苯乙烯5.0g、7.4g之PAG單體3、及作為溶劑之THF40g。將此反應容器於氮氣環境下冷卻到-70℃,重複3次減壓脫氣、吹氮。升溫至室溫後,添加作為聚合起始劑之AIBN1.2g,升溫到60℃後,進行15小時反應。將此反應溶液濃縮成1/2,添加到甲醇1L及水0.1L之混合溶劑,結果有白色固體。將獲得之白色固體分濾後,於60℃進行減壓乾燥,獲得聚合物6。聚合物6之組成利用13C-NMR及1H-NMR確認,Mw及Mw/Mn利用GPC確認。
[實施例1-7]聚合物7之合成
於2L燒瓶中添加2-乙烯基蒽醌4.5g、4-氟-3-(甲基環己氧基)苯乙烯5.2g、4-羥基苯乙烯4.8g、7.4g之PAG單體4、及作為溶劑之THF40g。將此反應容器於氮氣環境下冷卻到-70℃,重複3次減壓脫氣、吹氮。升溫至室溫後,添加作為聚合起始劑之AIBN1.2g,升溫到60℃後,進行15小時反應。將此反應溶液濃縮成1/2,添加到甲醇1L及水0.1L之混合溶劑,結果有白色固體沉澱。將獲得之白色固體分濾後,於60℃進行減壓乾燥,獲得聚合物7。聚合物7之組成係利用13C-NMR及1H-NMR確認,Mw及Mw/Mn利用GPC確認。
[比較例1-1]比較聚合物1之合成
將2-乙烯基蒽醌替換為使用乙烯合萘2.2g,除此以外依和實施例1-1同樣的方法進行合成,獲得比較聚合物1。比較聚合物1之組成利用1H-NMR確認,Mw及Mw/Mn利用GPC確認。
【化44】
[2]正型光阻材料之製備
[實施例2-1~2-9、比較例2-1]
將依表1所示之組成使各成分溶解於溶有100ppm之作為界面活性劑之3M公司製界面活性劑FC-4430之溶劑而得的溶液,以0.2μm尺寸之濾器過濾,製備成正型光阻材料。
表1中之各成分如下。
‧聚合物1~7:實施例1-1~1-7獲得之聚合物
‧比較聚合物1:比較例1獲得之聚合物
‧有機溶劑:PGMEA(丙二醇單甲醚乙酸酯)CyH(環己酮)
‧酸產生劑:PAG1(參照下列結構式)
‧鹼性化合物:淬滅劑1(參照下列結構式)
[3]EB描繪評價
將於實施例2-1~2-9及比較例2-1製備之各正型光阻材料,使用Clean trackMark 5(東京威力科創(股)製)旋塗在直徑6吋φ之Si基板上,於熱板上於110℃進行60秒預烘,製得100nm之光阻膜。對其使用日立製作所(股)製HL-800D,以HV電壓50kV實施真空腔室內描繪。
描繪後立即使用Clean trackMark 5(東京威力科創(股)製),在熱板上依表1所示之溫度進行60秒PEB,並以2.38質量%之TMAH水溶液進行30秒浸置顯影,獲得正型圖案。
獲得之光阻圖案依以下方式評價。
定義100nm之線與間距以1:1解像之曝光量之最小尺寸作為解像力,以SEM測定100nmLS之線邊緣粗糙度(LER)。
結果併記於表1。
【表1】
依表1所示之結果可知,使用了本發明之聚合物之光阻材料,有充分的解像力與感度,且LER減小。
Claims (12)
- 如申請專利範圍第1或2項之聚合物,更含有選自於下式(f1)~(f3)表示之重複單元中之至少1種;式中,RA各自獨立地為氫原子或甲基;R21為單鍵、伸苯基、-O-R31-、或-C(=O)-Z1-R31-,Z1為-O-或-NH-,R31為直鏈狀、分支狀之碳數1~6之伸烷基或環狀之碳數3~6之伸烷基、直鏈狀、分支狀之碳數2~6之伸烯基或環狀之碳數3~6之伸烯基、或伸苯基,也可以含有羰基、酯基、醚基或羥基;Rf1~Rf4各自獨立地為氟原子、氫原子或三氟甲基,但Rf1~Rf4中之至少一者為氟原子;R22~R29各自獨立地為也可以含有羰基、酯基或醚基之直鏈狀、分支狀或環狀之碳數1~12之烷基、碳數6~12之芳基、碳數7~20之芳烷基、或巰基苯基;Y1為單鍵、或也可含有酯基之碳數1~12之連結基、也可含有醚基之碳數2~12之連結基或也可含有內酯環之碳數3~12之連結基;Y2為單鍵、亞甲基、伸乙基、伸苯基、氟化伸苯基、-O-R32-、或-C(=O)-Z2-R32-,Z2為-O-或-NH-,R32為直鏈狀、分支狀之碳數1~6之伸烷基或環狀之碳數3~6之伸烷基、伸苯基、或直鏈狀、分支狀之碳數2~6之伸烯基或環狀之碳數3~6之伸烯基,也可以含有羰基、酯基、醚基或羥基;M-為非親核性相對離子。
- 一種正型光阻材料,包含含有如申請專利範圍第1至3項中任一項之聚合物之基礎樹脂。
- 如申請專利範圍第4項之正型光阻材料,係更含有有機溶劑及酸產生劑之化學增幅光阻材料。
- 如申請專利範圍第4或5項之正型光阻材料,更含有鹼性化合物。
- 如申請專利範圍第4或5項之正型光阻材料,更含有界面活性劑。
- 一種圖案形成方法,包括以下步驟:將如申請專利範圍第4至7項中任一項之正型光阻材料塗佈在基板上,進行加熱處理而形成光阻膜;將該光阻膜利用高能射線進行曝光;及使用顯影液將已曝光之光阻膜進行顯影。
- 如申請專利範圍第8項之圖案形成方法,其中,該基板為空白光罩。
- 如申請專利範圍第8或9項之圖案形成方法,其中,該高能射線為波長180~400nm之紫外線。
- 如申請專利範圍第8或9項之圖案形成方法,其中,該高能射線為電子束或波長3~15nm之極端紫外線。
- 一種空白光罩,塗佈有如申請專利範圍第4至7項中任一項之正型光阻材料。
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