TWI638317B - Image capturing module and electrical device - Google Patents
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Abstract
一種取像模組，其包括基板、多個發光元件、感測元件以及透光膠體固化層。多個發光元件與感測元件設置於基板上並分別與基板電性連接。透光膠體固化層設置於基板上並覆蓋感測元件以及發光元件。透光膠體固化層相對感測元件的一側具有至少一溝槽。至少一溝槽位於感測元件與發光元件之間，且至少一溝槽的深度小於透光膠體固化層的厚度。一種電子裝置亦被提出。An image capturing module includes a substrate, a plurality of light emitting elements, a sensing element, and a transparent colloid curing layer. The plurality of light emitting elements and the sensing elements are disposed on the substrate and are electrically connected to the substrate, respectively. The transparent colloid curing layer is disposed on the substrate and covers the sensing element and the light emitting element. The transparent colloid curing layer has at least one groove on a side opposite to the sensing element. At least one groove is located between the sensing element and the light-emitting element, and the depth of the at least one groove is smaller than the thickness of the transparent colloid curing layer. An electronic device has also been proposed.
Description
本發明是有關於一種光電模組及應用所述光電模組的電子裝置，且特別是有關於一種取像模組以及應用所述取像模組的電子裝置。 The invention relates to a photoelectric module and an electronic device using the photoelectric module, and more particularly to an image capturing module and an electronic device using the image capturing module.
生物辨識的種類包括臉部、聲音、虹膜、視網膜、靜脈、掌紋和指紋辨識等。依照感測方式的不同，生物特徵辨識裝置可分為光學式、電容式、超音波式及熱感應式。一般而言，光學式生物特徵辨識裝置包括光源、導光元件以及感測器。光源所發出的光束照射按壓於導光元件上的待辨識物，感測器接收被待辨識物反射的光束，以進行生物特徵的辨識。 Types of biometrics include face, voice, iris, retina, vein, palm print, and fingerprint recognition. According to different sensing methods, biometric identification devices can be divided into optical, capacitive, ultrasonic, and thermal sensing. Generally, an optical biometric identification device includes a light source, a light guide element, and a sensor. The light beam emitted by the light source irradiates the object to be identified pressed on the light guide element, and the sensor receives the light beam reflected by the object to be identified for identification of biological characteristics.
以指紋辨識為例，當手指按壓於導光元件上時，指紋的凸部會接觸導光元件，而指紋的凹部不會接觸導光元件。因此，指紋的凸部會破壞光束在導光元件內的全反射，而使感測器取得對應凸部的暗紋。同時，指紋的凹部不會破壞光束在導光元件內 的全反射，而使感測器取得對應凹部的亮紋。藉此，對應指紋的凸部與凹部的光束會在感測器的光接收面上形成亮暗相間的條紋圖案。利用演算法計算對應指紋影像的資訊，便可進行使用者身份的辨識。 Taking fingerprint recognition as an example, when a finger is pressed on the light guide element, the convex portion of the fingerprint will contact the light guide element, and the concave portion of the fingerprint will not contact the light guide element. Therefore, the convex portion of the fingerprint destroys the total reflection of the light beam in the light guide element, so that the sensor obtains a dark line corresponding to the convex portion. At the same time, the recess of the fingerprint will not destroy the light beam in the light guide element. Total reflection, so that the sensor obtains bright lines corresponding to the concave portion. Thereby, the light beams corresponding to the convex portion and the concave portion of the fingerprint will form a light and dark striped pattern on the light receiving surface of the sensor. Using algorithms to calculate information corresponding to fingerprint images, user identification can be performed.
由於光學式生物特徵辨識裝置中的光源配置在感測器旁，因此光源所發出的大角度光束有可能直接照射到感測器而造成光干擾，進而造成指紋辨識能力下降的問題。 Since the light source in the optical biometric identification device is arranged next to the sensor, a large-angle light beam emitted by the light source may directly irradiate the sensor and cause light interference, which may cause a problem of reduced fingerprint recognition capability.
本發明提供一種取像模組以及電子裝置，其可具有良好的辨識能力。 The invention provides an image capturing module and an electronic device, which can have good identification ability.
本發明的取像模組，用以辨識一手指的指紋圖案，取像模組包括基板、多個發光元件、感測元件以及透光膠體固化層。多個發光元件設置於基板上並與基板電性連接。感測元件設置於基板上並與基板電性連接。透光膠體固化層設置於基板上並覆蓋感測元件以及發光元件。透光膠體固化層相對感測元件的一側具有至少一溝槽。至少一溝槽位於感測元件與發光元件之間，且至少一溝槽的深度小於透光膠體固化層的厚度。 The image capturing module of the present invention is used to identify a fingerprint pattern of a finger. The image capturing module includes a substrate, a plurality of light emitting elements, a sensing element, and a transparent colloid curing layer. The plurality of light emitting elements are disposed on the substrate and are electrically connected to the substrate. The sensing element is disposed on the substrate and is electrically connected to the substrate. The transparent colloid curing layer is disposed on the substrate and covers the sensing element and the light emitting element. The transparent colloid curing layer has at least one groove on a side opposite to the sensing element. At least one groove is located between the sensing element and the light-emitting element, and the depth of the at least one groove is smaller than the thickness of the transparent colloid curing layer.
在本發明的一實施例中，取像模組還包括多個黏著層。多個黏著層分別設置位於多個發光元件與基板之間以及感測元件與基板之間。 In an embodiment of the invention, the image capturing module further includes a plurality of adhesive layers. The plurality of adhesive layers are respectively disposed between the plurality of light emitting elements and the substrate and between the sensing element and the substrate.
在本發明的一實施例中，至少一溝槽具有兩個斜面。兩 個斜面中較鄰近所對應的發光元件的斜面與透光膠體固化層相對於感測元件的表面所夾的角度的補角落在30度至45度的範圍內。 In an embodiment of the invention, at least one groove has two inclined surfaces. Two The complementary corner of the angle between the inclined surface of the corresponding light-emitting element and the transparent colloid curing layer relative to the surface of the sensing element in each of the inclined surfaces is in a range of 30 degrees to 45 degrees.
在本發明的一實施例中，至少一溝槽為V型溝槽，且至少一溝槽中填充有一透光材料。透光材料的折射率大於透光膠體固化層的折射率。 In an embodiment of the present invention, at least one groove is a V-shaped groove, and at least one groove is filled with a light-transmitting material. The refractive index of the light-transmitting material is greater than the refractive index of the solidified layer of the light-transmitting colloid.
在本發明的一實施例中，至少一溝槽為U型溝槽。至少一溝槽的深度大於各發光元件的出光面至透光膠體固化層相對於感測元件的表面的距離。 In an embodiment of the invention, at least one groove is a U-shaped groove. The depth of the at least one groove is greater than the distance from the light-emitting surface of each light-emitting element to the surface of the light-transmissive colloid-cured layer relative to the sensing element.
在本發明的一實施例中，至少一溝槽的寬度、至少一溝槽所對應的發光元件的其中之一到至少一溝槽的距離以及感測元件至至少一溝槽的距離皆為至少一溝槽所對應的發光元件的其中之一至感測元件的距離的三分之一。 In an embodiment of the present invention, the width of at least one trench, the distance from one of the light-emitting elements corresponding to the at least one trench to the at least one trench, and the distance from the sensing element to the at least one trench are at least The distance between one of the light-emitting elements corresponding to one groove and the sensing element is one third.
在本發明的一實施例中，至少一溝槽為倒梯形溝槽，且至少一溝槽的深度小於各發光元件的出光面至透光膠體固化層相對於感測元件的表面的距離。 In an embodiment of the present invention, the at least one groove is an inverted trapezoidal groove, and the depth of the at least one groove is smaller than the distance from the light-emitting surface of each light-emitting element to the surface of the light-transmissive gel-cured layer relative to the surface of the sensing element.
在本發明的一實施例中，至少一溝槽為U型溝槽或倒梯形溝槽，且至少一溝槽中填充有透光材料。透光材料的折射率小於透光膠體固化層的折射率。 In an embodiment of the present invention, at least one groove is a U-shaped groove or an inverted trapezoidal groove, and at least one groove is filled with a light-transmitting material. The refractive index of the light-transmitting material is smaller than the refractive index of the solidified layer of the light-transmitting colloid.
在本發明的一實施例中，取像模組還包括光準直元件。光準直元件設置於感測元件上且位於透光膠體固化層與感測元件之間。 In an embodiment of the present invention, the image capturing module further includes a light collimation element. The light collimating element is disposed on the sensing element and located between the transparent colloid curing layer and the sensing element.
在本發明的一實施例中，取像模組還包括多條連接線以 及至少一牆體結構。多條連接線分別連接於感測元件與基板之間以及多個發光元件與基板之間。至少一牆體結構環繞感測元件以及多個發光元件。 In an embodiment of the present invention, the image capturing module further includes a plurality of connecting lines to And at least one wall structure. The plurality of connection lines are respectively connected between the sensing element and the substrate and between the plurality of light emitting elements and the substrate. At least one wall structure surrounds the sensing element and a plurality of light emitting elements.
在本發明的一實施例中，取像模組還包括蓋板。蓋板設置於透光膠體固化層上並覆蓋至少一溝槽，其中至少一溝槽中的光傳遞介質包括空氣。 In an embodiment of the invention, the image capturing module further includes a cover plate. The cover plate is disposed on the transparent colloid curing layer and covers at least one groove. The light transmission medium in the at least one groove includes air.
在本發明的一實施例中，基板具有金屬環。金屬環位於基板的上表面與下表面之間且環繞感測元件的感測區。 In one embodiment of the present invention, the substrate has a metal ring. The metal ring is located between the upper surface and the lower surface of the substrate and surrounds the sensing area of the sensing element.
本發明的電子裝置包括取像模組、紅外帶通濾光層以及顯示元件。取像模組包括基板、多個發光元件、感測元件以及透光膠體固化層。多個發光元件設置於基板上並與基板電性連接。感測元件設置於基板上並與基板電性連接。透光膠體固化層設置於基板上並覆蓋感測元件以及發光元件。透光膠體固化層相對感測元件的一側具有至少一溝槽。至少一溝槽位於感測元件與發光元件之間，且至少一溝槽的深度小於透光膠體固化層的厚度。紅外帶通濾光層設置於透光膠體固化層上。顯示元件設置於紅外帶通濾光層上。 The electronic device of the present invention includes an image capturing module, an infrared band-pass filter layer, and a display element. The image capturing module includes a substrate, a plurality of light emitting elements, a sensing element, and a transparent colloid curing layer. The plurality of light emitting elements are disposed on the substrate and are electrically connected to the substrate. The sensing element is disposed on the substrate and is electrically connected to the substrate. The transparent colloid curing layer is disposed on the substrate and covers the sensing element and the light emitting element. The transparent colloid curing layer has at least one groove on a side opposite to the sensing element. At least one groove is located between the sensing element and the light-emitting element, and the depth of the at least one groove is smaller than the thickness of the transparent colloid curing layer. The infrared band-pass filter layer is disposed on the transparent colloid curing layer. The display element is disposed on the infrared band-pass filter layer.
在本發明的一實施例中，取像模組還包括多個黏著層。多個黏著層分別設置位於多個發光元件與基板之間以及感測元件與基板之間。 In an embodiment of the invention, the image capturing module further includes a plurality of adhesive layers. The plurality of adhesive layers are respectively disposed between the plurality of light emitting elements and the substrate and between the sensing element and the substrate.
在本發明的一實施例中，至少一溝槽具有兩個斜面。兩個斜面中較鄰近所對應的發光元件的斜面與透光膠體固化層相對 於感測元件的表面所夾的角度的補角落在30度至45度的範圍內。 In an embodiment of the invention, at least one groove has two inclined surfaces. The oblique surface of the corresponding light-emitting element adjacent to the two oblique surfaces is opposite to the light-transmitting colloid curing layer. The complementary corner of the angle between the surface of the sensing element is in the range of 30 degrees to 45 degrees.
在本發明的一實施例中，至少一溝槽為V型溝槽，且至少一溝槽中填充有一透光材料。透光材料的折射率大於透光膠體固化層的折射率。 In an embodiment of the present invention, at least one groove is a V-shaped groove, and at least one groove is filled with a light-transmitting material. The refractive index of the light-transmitting material is greater than the refractive index of the solidified layer of the light-transmitting colloid.
在本發明的一實施例中，至少一溝槽為U型溝槽。至少一溝槽的深度大於各發光元件的出光面至透光膠體固化層相對於感測元件的表面的距離。 In an embodiment of the invention, at least one groove is a U-shaped groove. The depth of the at least one groove is greater than the distance from the light-emitting surface of each light-emitting element to the surface of the light-transmissive colloid-cured layer relative to the sensing element.
在本發明的一實施例中，至少一溝槽的寬度、至少一溝槽所對應的發光元件的其中之一到至少一溝槽的距離以及感測元件至至少一溝槽的距離皆為至少一溝槽所對應的發光元件的其中之一至感測元件的距離的三分之一。 In an embodiment of the present invention, the width of at least one trench, the distance from one of the light-emitting elements corresponding to the at least one trench to the at least one trench, and the distance from the sensing element to the at least one trench are at least The distance between one of the light-emitting elements corresponding to one groove and the sensing element is one third.
在本發明的一實施例中，至少一溝槽為倒梯形溝槽，且至少一溝槽的深度小於各發光元件的出光面至透光膠體固化層相對於感測元件的表面的距離。 In an embodiment of the present invention, the at least one groove is an inverted trapezoidal groove, and the depth of the at least one groove is smaller than the distance from the light-emitting surface of each light-emitting element to the surface of the light-transmissive gel-cured layer relative to the surface of the sensing element.
在本發明的一實施例中，至少一溝槽為U型溝槽或倒梯形溝槽，且至少一溝槽中填充有透光材料。透光材料的折射率小於透光膠體固化層的折射率。 In an embodiment of the present invention, at least one groove is a U-shaped groove or an inverted trapezoidal groove, and at least one groove is filled with a light-transmitting material. The refractive index of the light-transmitting material is smaller than the refractive index of the solidified layer of the light-transmitting colloid.
在本發明的一實施例中，取像模組還包括光準直元件。光準直元件設置於感測元件上且位於透光膠體固化層與感測元件之間。 In an embodiment of the present invention, the image capturing module further includes a light collimation element. The light collimating element is disposed on the sensing element and located between the transparent colloid curing layer and the sensing element.
在本發明的一實施例中，取像模組還包括多條連接線以及至少一牆體結構。多條連接線分別連接於感測元件與基板之間 以及多個發光元件與基板之間，且至少一牆體結構環繞感測元件以及多個發光元件。 In an embodiment of the present invention, the image capturing module further includes a plurality of connecting lines and at least one wall structure. Multiple connection lines are connected between the sensing element and the substrate And between the plurality of light emitting elements and the substrate, and at least one wall structure surrounds the sensing element and the plurality of light emitting elements.
在本發明的一實施例中，多個發光元件為紅外光發光元件。 In one embodiment of the present invention, the plurality of light emitting elements are infrared light emitting elements.
在本發明的一實施例中，電子裝置還包括硬塗層。硬塗層設置於顯示元件與紅外帶通濾光層之間。 In an embodiment of the invention, the electronic device further includes a hard coating layer. The hard coating layer is disposed between the display element and the infrared band-pass filter layer.
在本發明的一實施例中，紅外帶通濾光層讓波長為800nm至940nm的光束通過，且過濾波長為800nm至940nm以外的光束。 In an embodiment of the present invention, the infrared band-pass filter layer allows light beams with a wavelength of 800 nm to 940 nm to pass through, and filters light beams with a wavelength other than 800 nm to 940 nm.
在本發明的一實施例中，基板具有金屬環。金屬環位於基板的上表面與下表面之間且環繞感測元件的感測區。 In one embodiment of the present invention, the substrate has a metal ring. The metal ring is located between the upper surface and the lower surface of the substrate and surrounds the sensing area of the sensing element.
基於上述，在本發明的取像模組及電子裝置中，透光膠體固化層具有至少一溝槽，且至少一溝槽位於感測元件與多個發光元件之間。至少一溝槽可以避免發光元件所射出的光束直接照射至感測元件，進而降低光干擾，並提升取像模組的辨識能力。 Based on the above, in the imaging module and the electronic device of the present invention, the transparent colloid curing layer has at least one groove, and the at least one groove is located between the sensing element and the plurality of light emitting elements. The at least one groove can prevent the light beam emitted by the light emitting element from directly irradiating the sensing element, thereby reducing light interference and improving the recognition ability of the image capturing module.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。 In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.
10‧‧‧待測物 10‧‧‧ DUT
100、100A、100B、100C、100D、100E、100F、100G‧‧‧取像模組 100, 100A, 100B, 100C, 100D, 100E, 100F, 100G
110‧‧‧基板 110‧‧‧ substrate
120‧‧‧發光元件 120‧‧‧Light-emitting element
122‧‧‧出光面 122‧‧‧Outside
130‧‧‧感測元件 130‧‧‧ sensing element
132‧‧‧感測面 132‧‧‧Sensing surface
140‧‧‧透光膠體固化層 140‧‧‧Transparent colloid curing layer
142、142A、142B、142C、142D‧‧‧溝槽 142, 142A, 142B, 142C, 142D
144、144A、144B、144C‧‧‧斜面 144, 144A, 144B, 144C‧‧‧ bevel
146‧‧‧側面 146‧‧‧side
148‧‧‧底面 148‧‧‧ underside
150、240‧‧‧黏著層 150, 240‧‧‧ Adhesive layer
160‧‧‧連接線 160‧‧‧Connecting cable
170‧‧‧牆體結構 170‧‧‧wall structure
180‧‧‧蓋板 180‧‧‧ Cover
190‧‧‧光準直元件 190‧‧‧light collimation element
200‧‧‧電子裝置 200‧‧‧Electronic device
210‧‧‧紅外帶通濾光層 210‧‧‧IR Bandpass Filter
220‧‧‧顯示元件 220‧‧‧Display element
230‧‧‧硬塗層 230‧‧‧hard coating
D、D1、D2、D3、H5‧‧‧距離 D, D1, D2, D3, H5‧‧‧ distance
F1、F2、F3‧‧‧透光材料 F1, F2, F3‧‧‧‧Translucent material
H1、H2‧‧‧高度 H1, H2‧‧‧ height
H3、H3A、H3B、H3C、H3D‧‧‧深度 H3, H3A, H3B, H3C, H3D‧‧‧depth
H4‧‧‧厚度 H4‧‧‧thickness
L、L’‧‧‧光束 L, L’ ‧‧‧ Beam
θ‧‧‧補角 θ‧‧‧ supplementary angle
圖1A至圖1B分別為本發明的第一實施例的取像模組的上視及剖面示意圖。 1A to 1B are schematic top and cross-sectional views of an image capturing module according to a first embodiment of the present invention, respectively.
圖2A至圖2B分別為本發明的第二實施例的取像模組的上視及剖面示意圖。 2A to 2B are schematic top and cross-sectional views of an image capturing module according to a second embodiment of the present invention, respectively.
圖3為本發明的第三實施例的取像模組的剖面示意圖。 3 is a schematic cross-sectional view of an image capturing module according to a third embodiment of the present invention.
圖4為本發明的第四實施例的取像模組的剖面示意圖。圖5為本發明的取像模組的溝槽的另一種剖面示意圖。 FIG. 4 is a schematic cross-sectional view of an image capturing module according to a fourth embodiment of the present invention. FIG. 5 is another schematic cross-sectional view of a groove of an image capturing module according to the present invention.
圖6為本發明的取像模組的溝槽的又一種剖面示意圖。 6 is another schematic cross-sectional view of a groove of an image capturing module according to the present invention.
圖7A至圖7B分別為本發明的取像模組的溝槽的再兩種剖面示意圖。 7A to 7B are schematic cross-sectional views of two types of grooves of the image capturing module of the present invention.
圖8為本發明一實施例的電子裝置的示意圖。 FIG. 8 is a schematic diagram of an electronic device according to an embodiment of the invention.
圖9為本發明一實施例的紅外帶通濾光層的波長-穿透率關係圖。 FIG. 9 is a wavelength-transmittance relationship diagram of an infrared bandpass filter layer according to an embodiment of the present invention.
有關本創作之前述及其他技術內容、特點與功效，在以下配合參考圖式之各實施例的詳細說明中，將可清楚的呈現。以下實施例中所提到的方向用語，例如：「上」、「下」、「前」、「後」、「左」、「右」等，僅是參考附加圖式的方向。因此，使用的方向用語是用來說明，而並非用來限制本創作。並且，在下列任一實施例中，相同或相似的元件將採用相同或相似的標號。 The foregoing and other technical contents, features, and effects of this creation will be clearly presented in the following detailed description of each embodiment with reference to the drawings. The directional terms mentioned in the following embodiments, such as: "up", "down", "front", "rear", "left", "right", etc., are only directions referring to the attached drawings. Therefore, the terminology used is used to illustrate, not to limit the creation. Also, in any of the following embodiments, the same or similar elements will be given the same or similar reference numerals.
圖1A至圖1B分別為本發明的第一實施例的取像模組的上視及剖面示意圖，其中圖1A為沿圖1B的剖線A-A’的剖面示意圖。請參照圖1A至圖1B，取像模組100適於擷取待測物10的生 物特徵。在本實施例中，待測物10例如為手指，且生物特徵例如為指紋或靜脈，但不以此為限。舉例而言，在另一實施例中，待測物10也可為手掌，且生物特徵可為掌紋。 FIG. 1A to FIG. 1B are schematic top and cross-sectional views of an image capturing module according to a first embodiment of the present invention, respectively, and FIG. 1A is a cross-sectional view taken along a line A-A 'of FIG. 1B. Please refer to FIG. 1A to FIG. 1B. The image capturing module 100 is adapted to capture the health of the object 10 to be measured. 物 traits. In this embodiment, the test object 10 is, for example, a finger, and the biological characteristic is, for example, a fingerprint or a vein, but is not limited thereto. For example, in another embodiment, the object under test 10 may also be a palm, and the biological feature may be a palm print.
取像模組100包括基板110、多個發光元件120、感測元件130以及透光膠體固化層140。 The image capturing module 100 includes a substrate 110, a plurality of light emitting elements 120, a sensing element 130, and a transparent colloid curing layer 140.
基板110作為上述元件的載板，且基板110可以具有線路。舉例而言，基板110例如為印刷電路板(Printed circuit board，PCB)、可撓式印刷電路板(Flexible printed circuit board，FPCB)、具有線路的玻璃載板或具有線路的陶瓷基板，但不以此為限。 The substrate 110 serves as a carrier for the above-mentioned elements, and the substrate 110 may have wiring. For example, the substrate 110 is, for example, a printed circuit board (PCB), a flexible printed circuit board (FPCB), a glass substrate with a circuit, or a ceramic substrate with a circuit. This is limited.
為增加取像模組100的封裝結構的使用性，可於基板110中設置金屬環MR。金屬環MR位於基板110的上表面與下表面之間且環繞感測元件130的感測區。藉此，當待測物10按壓在透光膠體固化層140上時，即可通過感應起電的方式使裝置開始運作，而取像模組100的封裝結構可於未使用時進入暫時停止狀態，以達到節能省電的功效。 In order to increase the usability of the packaging structure of the image capturing module 100, a metal ring MR may be provided in the substrate 110. The metal ring MR is located between the upper surface and the lower surface of the substrate 110 and surrounds the sensing area of the sensing element 130. Thereby, when the object to be tested 10 is pressed on the transparent colloid curing layer 140, the device can be started to operate by inductive electrification, and the packaging structure of the image capturing module 100 can be temporarily stopped when not in use. To achieve the effect of energy saving.
多個發光元件120設置於基板110上並與基板110電性連接。各發光元件120具有出光面122。各發光元件120的出光面122朝向待測物10發出光束L。多個發光元件120可以包括發光二極體、雷射二極體或上述兩者的組合。此外，光束L可以包括可見光、非可見光或上述兩者的組合。非可見光可為紅外光，但不以此為限。 The plurality of light emitting elements 120 are disposed on the substrate 110 and are electrically connected to the substrate 110. Each light emitting element 120 has a light emitting surface 122. The light emitting surface 122 of each light emitting element 120 emits a light beam L toward the object to be measured 10. The plurality of light emitting elements 120 may include a light emitting diode, a laser diode, or a combination of the two. In addition, the light beam L may include visible light, non-visible light, or a combination of the two. Invisible light may be infrared light, but it is not limited to this.
感測元件130設置於基板110上並與基板110電性連接。 此外，感測元件130位於多個發光元件120旁，用以接收光束L被待測物10反射的部分(即帶有指紋圖案資訊的反射光束L’)。感測元件130例如為電荷耦合元件(Charge Coupled Device,CCD)、互補式金屬氧化物半導體元件(Complementary Metal-Oxide Semiconductor,CMOS)或其他適當種類的影像感測元件。 The sensing element 130 is disposed on the substrate 110 and is electrically connected to the substrate 110. In addition, the sensing element 130 is located beside the plurality of light-emitting elements 120 and is used to receive a portion of the light beam L reflected by the object 10 (that is, the reflected light beam L 'with fingerprint pattern information). The sensing element 130 is, for example, a Charge Coupled Device (CCD), a Complementary Metal-Oxide Semiconductor (CMOS), or other appropriate types of image sensing elements.
在一實施例中，感測元件130內可整合有脈寬調變電路。藉由脈寬調變電路控制發光元件120的發光時間與感測元件130的取像時間，使發光元件120的發光時間與感測元件130的取像時間同步，可達到精確控制的效果，但不以此為限。 In one embodiment, a pulse width modulation circuit may be integrated in the sensing element 130. By controlling the light emitting time of the light emitting element 120 and the image capturing time of the sensing element 130 by the pulse width modulation circuit, the light emitting time of the light emitting element 120 and the image capturing time of the sensing element 130 are synchronized, and the effect of precise control can be achieved. But not limited to this.
透光膠體固化層140設置於基板110上並覆蓋感測元件130以及多個發光元件120。透光膠體固化層140例如為矽膠、樹脂、光學膠、環氧樹脂(Epoxy)等透光膠體經由升溫製程或照光製程固化而成。因此透光膠體固化層140除了可以防止靜電破壞以保護內部所覆蓋的感測元件130以及多個發光元件120，還可以讓多個發光元件120所發出的光束L以及待測物10所反射的光束L’穿透。 The transparent colloid curing layer 140 is disposed on the substrate 110 and covers the sensing element 130 and the plurality of light emitting elements 120. The translucent colloid curing layer 140 is, for example, cured by translucent colloids such as silicone, resin, optical adhesive, and epoxy resin through a heating process or a light irradiation process. Therefore, in addition to preventing electrostatic damage to protect the sensing element 130 and the plurality of light-emitting elements 120 covered by the light-transmissive colloidal curing layer 140, the light beam L emitted from the plurality of light-emitting elements 120 and the reflected light from the object 10 to be measured can also be protected. The light beam L 'penetrates.
透光膠體固化層140相對感測元件130的一側具有至少一溝槽142，且至少一溝槽142位於感測元件130與多個發光元件120之間。在本實施例中，多個發光元件120位於感測元件130的兩對側，且透光膠體固化層140包括兩條溝槽142，但不以此為限。 The transparent colloid curing layer 140 has at least one groove 142 on a side opposite to the sensing element 130, and the at least one groove 142 is located between the sensing element 130 and the plurality of light emitting elements 120. In this embodiment, the plurality of light-emitting elements 120 are located on two opposite sides of the sensing element 130, and the transparent colloid curing layer 140 includes two grooves 142, but it is not limited thereto.
在本實施例中，溝槽142的深度H3小於透光膠體固化層140的厚度H4，意即符合H3<H4。也就是說，溝槽142不用貫穿透光膠體固化層140，因此便於製作。 In this embodiment, the depth H3 of the trench 142 is smaller than the thickness H4 of the transparent colloid curing layer 140, which means that H3 <H4 is satisfied. In other words, the trenches 142 do not need to penetrate the transparent colloid curing layer 140 and are therefore easy to fabricate.
在本實施例中，各溝槽142為長條狀的V型溝槽，且各溝槽142具有兩個斜面144。可藉由調整溝槽142的兩個斜面144中較鄰近所對應的多個發光元件120的斜面144與透光膠體固化層140相對於感測元件130的表面(如待測物10的觸碰面)所夾的角度的補角θ，以具有理想的光利用率。舉例而言，補角θ落在30度至45度的範圍內，且至少一溝槽142的深度H3係依據此補角θ的大小來決定。在其他實施例中，各溝槽142的剖面形狀也可以是倒立梯形、倒立半圓形或其他形狀。所述半圓形泛指非完整圓形，而並不限於圓形的一半。 In this embodiment, each groove 142 is a long V-shaped groove, and each groove 142 has two inclined surfaces 144. By adjusting the inclined surfaces 144 of the two inclined surfaces 144 of the trench 142 that are adjacent to the corresponding plurality of light-emitting elements 120 and the surface of the light-transmissive colloid curing layer 140 with respect to the sensing element 130 (such as the touch surface of the object 10 to be tested The angle θ complements the angle θ to have an ideal light utilization efficiency. For example, the complementary angle θ falls within a range of 30 degrees to 45 degrees, and the depth H3 of the at least one groove 142 is determined according to the magnitude of the complementary angle θ. In other embodiments, the cross-sectional shape of each groove 142 may also be an inverted trapezoid, an inverted semicircle, or other shapes. The semicircle generally refers to a non-complete circle, and is not limited to a half of the circle.
V型溝槽有助於改變光束L的行徑路徑。具體地，發光元件120所發出的光束L傳遞至溝槽142靠近發光元件120的斜面144時，會通過靠近發光元件120的斜面144而進入溝槽142(即射出透光膠體固化層140)。進入溝槽142的部分光束可再經由溝槽142靠近感測元件130的斜面144進入透光膠體固化層140。藉由V型溝槽改變光束L的行徑路徑有助於避免發光元件120所發出的光束L直接照射至感測元件130，進而降低感測元件130的光干擾，並提升取像模組100的辨識能力。 The V-shaped groove helps to change the path of the beam L. Specifically, when the light beam L emitted from the light emitting element 120 is transmitted to the groove 142 near the inclined surface 144 of the light emitting element 120, it enters the groove 142 through the inclined surface 144 near the light emitting element 120 (that is, the light-transmitting colloid cured layer 140 is emitted). Part of the light beam entering the groove 142 can enter the transparent colloid curing layer 140 through the inclined surface 144 of the groove 142 near the sensing element 130. Changing the path of the light beam L by the V-shaped groove helps to prevent the light beam L emitted by the light emitting element 120 from directly irradiating the sensing element 130, thereby reducing the light interference of the sensing element 130, and improving the image capturing module 100. Discernment.
在本實施例中，溝槽142中的光傳遞介質為空氣，但不以此為限。在另一實施例中，溝槽142中可填充有透光材料，其 中透光材料的折射率大於透光膠體固化層140的折射率，以較佳避免發光元件120所發出的光束L直接照射至感測元件130。所述透光材料為高折射率的透光材料，例如為可藉由光固化或熱固化的光學膠，但不以此為限。 In this embodiment, the light transmission medium in the groove 142 is air, but it is not limited thereto. In another embodiment, the trench 142 may be filled with a light-transmitting material, which The refractive index of the medium-light-transmitting material is greater than the refractive index of the transparent colloid-cured layer 140 to better prevent the light beam L emitted from the light-emitting element 120 from directly irradiating the sensing element 130. The light-transmitting material is a light-transmitting material with a high refractive index, such as an optical adhesive that can be cured by light or heat, but is not limited thereto.
另外，還可使感測元件130的高度H2小於發光元件120的高度H1，也就是使發光元件120的出光面122高於感測元件130的感測面132，以進一步降低光干擾。感測元件130的高度H2指感測元件130的感光面132至基板110的距離，而發光元件120的高度H1指發光元件120的出光面122至基板110的距離。 In addition, the height H2 of the sensing element 130 can be made smaller than the height H1 of the light emitting element 120, that is, the light emitting surface 122 of the light emitting element 120 is higher than the sensing surface 132 of the sensing element 130 to further reduce light interference. The height H2 of the sensing element 130 refers to the distance from the photosensitive surface 132 of the sensing element 130 to the substrate 110, and the height H1 of the light emitting element 120 refers to the distance from the light emitting surface 122 of the light emitting element 120 to the substrate 110.
使感測元件130的高度H2小於發光元件120的高度H1的方法可以是改變上述各元件(感測元件130以及發光元件120)本身的厚度。或者，在上述各元件與基板110之間設置有其他膜層的情況下，可調整所述其他膜層的厚度，以使感測元件130的高度H2小於發光元件120的高度H1。舉例而言，取像模組100還包括多個黏著層150。黏著層150分別設置位於多個發光元件120與基板110之間以及感測元件130與基板110之間。黏著層150例如為黏著膠體或雙面膠等。各發光元件120及其下的黏著層150的厚度總合即發光元件120的高度H1，而感測元件130及其下的黏著層150的厚度總合即感測元件130的高度H2。可藉由改變各發光元件120下的黏著層150的厚度以及感測元件130下的黏著層150的厚度，來使感測元件130的高度H2小於發光元件120的高度H1。然而，在另一實施例中，感測元件130的高度H2 也可等於或大於發光元件120的高度H1。 A method of making the height H2 of the sensing element 130 smaller than the height H1 of the light emitting element 120 may be to change the thickness of each of the above elements (the sensing element 130 and the light emitting element 120). Alternatively, when other film layers are provided between the above-mentioned elements and the substrate 110, the thickness of the other film layers may be adjusted so that the height H2 of the sensing element 130 is smaller than the height H1 of the light-emitting element 120. For example, the image capturing module 100 further includes a plurality of adhesive layers 150. The adhesive layer 150 is respectively disposed between the plurality of light-emitting elements 120 and the substrate 110 and between the sensing element 130 and the substrate 110. The adhesive layer 150 is, for example, an adhesive gel or a double-sided adhesive. The thickness of each light-emitting element 120 and the adhesive layer 150 below it is the height H1 of the light-emitting element 120, and the thickness of the sensing element 130 and the adhesive layer 150 below it is the height H2 of the sensing element 130. The height H2 of the sensing element 130 can be made smaller than the height H1 of the light-emitting element 120 by changing the thickness of the adhesive layer 150 under each light-emitting element 120 and the thickness of the adhesive layer 150 under the sensing element 130. However, in another embodiment, the height H2 of the sensing element 130 It may be equal to or larger than the height H1 of the light emitting element 120.
在本實施例中，取像模組100還包括多條連接線160。連接線160分別連接於感測元件130與基板110之間以及多個發光元件120與基板110之間，以使感測元件130與多個發光元件120分別與基板110電性連接。多條連接線160的材質例如是金、銅等，但不以此為限。在另一實施例中，感測元件130與多個發光元件120也可透過焊球與基板110上的電路連接，而可省略連接線160。 In this embodiment, the image capturing module 100 further includes a plurality of connecting lines 160. The connecting lines 160 are respectively connected between the sensing element 130 and the substrate 110 and between the plurality of light emitting elements 120 and the substrate 110, so that the sensing element 130 and the plurality of light emitting elements 120 are electrically connected to the substrate 110 respectively. The material of the plurality of connecting wires 160 is, for example, gold, copper, etc., but is not limited thereto. In another embodiment, the sensing element 130 and the plurality of light-emitting elements 120 can also be connected to the circuit on the substrate 110 through solder balls, and the connection line 160 can be omitted.
本實施例的取像模組100的製作方式例如可包括以下步驟。首先，藉由多個黏著層150將多個發光元件120及感測元件130黏貼於基板110上，其中多個發光元件120及感測元件130的高度可藉由研磨的方式進一步調整。其次，使用打線設備於基板110上形成多條連接線160，其中多條連接線160分別連接多個發光元件120的導電墊與基板110的導電墊以及連接感測元件130的導電墊與基板110的導電墊。接著，使用灌膠設備將透光膠體形成於基板110上並且覆蓋多個發光元件120、感測元件130以及多條連接線160。然後，透過升溫製程(如烘烤製程)或照光製程(如紫外光固化製程)固化透光膠體。最後，藉由蝕刻、雷射雕刻或其他現有的圖案化方法，在固化後的透光膠體相對於感測元件130的一側形成至少一溝槽142，從而形成透光膠體固化層140。在其他實施例中，也可以藉由模具而使透光膠體固化層140與至少一溝槽142一體成型，但本發明並不限於此。在一實施例 中，可以在基板110上同時製造多個取像單元(包括發光元件120、感測元件130及透光膠體固化層140)，並藉由切割製程切割出多個取像模組100。 The manufacturing method of the image capturing module 100 in this embodiment may include, for example, the following steps. First, a plurality of light-emitting elements 120 and sensing elements 130 are adhered to the substrate 110 by a plurality of adhesive layers 150, and the heights of the plurality of light-emitting elements 120 and the sensing elements 130 can be further adjusted by grinding. Secondly, a plurality of connection lines 160 are formed on the substrate 110 by using a wire bonding device, wherein the plurality of connection lines 160 connect the conductive pads of the plurality of light-emitting elements 120 and the conductive pads of the substrate 110 and the conductive pads of the sensing element 130 and the substrate 110, respectively. Conductive pads. Next, a translucent colloid is formed on the substrate 110 using a potting device and covers the plurality of light-emitting elements 120, the sensing elements 130, and the plurality of connection lines 160. Then, the light-transmitting colloid is cured through a heating process (such as a baking process) or a light process (such as an ultraviolet curing process). Finally, by etching, laser engraving, or other existing patterning methods, at least one groove 142 is formed on a side of the cured transparent colloid opposite to the sensing element 130 to form a transparent colloid cured layer 140. In other embodiments, the transparent colloidal cured layer 140 and the at least one groove 142 may be integrally formed by a mold, but the present invention is not limited thereto. In an embodiment In the method, a plurality of image capturing units (including a light emitting element 120, a sensing element 130, and a transparent colloid curing layer 140) can be manufactured on the substrate 110 at the same time, and a plurality of image capturing modules 100 are cut by a cutting process.
藉由上述的製作方式，本實施例的取像模組100可以製作為全平面的指紋辨識裝置，進而增加與其他裝置組裝的相容性。此外，藉由壓膜注膠的製作方式，本實施例的取像模組100可以被大量生產，進而降低生產成本。另外，由於透光膠體固化層140的溝槽142可以降低光干擾，因此可以省略遮光元件的設置，進而可以簡化製程步驟、減少製程所需元件並有助於縮減模組面積。 With the above-mentioned manufacturing method, the image capturing module 100 of this embodiment can be manufactured as a full-plane fingerprint recognition device, thereby increasing compatibility with assembly of other devices. In addition, with the manufacturing method of the film injection, the image capturing module 100 of this embodiment can be mass-produced, thereby reducing the production cost. In addition, since the grooves 142 of the transparent colloid curing layer 140 can reduce light interference, the arrangement of the light-shielding element can be omitted, thereby simplifying the manufacturing steps, reducing the components required for the manufacturing process, and helping to reduce the module area.
圖2A至圖2B分別為本發明的第二實施例的取像模組的上視及剖面示意圖，其中圖2A為沿圖2B的剖線A-A’的剖面示意圖。請參照圖2A及圖2B，取像模組100A與圖1A的取像模組100類似。兩者的主要差異如下所述。取像模組100A還包括至少一牆體結構170。至少一牆體結構170環繞感測元件130以及多個發光元件120，其中至少一牆體結構170的材料可選用與基板110相同或不同的材料，本發明並不限於此。 FIG. 2A to FIG. 2B are schematic top and cross-sectional views of an image capturing module according to a second embodiment of the present invention, respectively, and FIG. 2A is a cross-sectional schematic view taken along line A-A 'of FIG. 2B. 2A and 2B, the image capturing module 100A is similar to the image capturing module 100 of FIG. 1A. The main differences between the two are described below. The image capturing module 100A further includes at least one wall structure 170. The at least one wall structure 170 surrounds the sensing element 130 and the plurality of light-emitting elements 120. The material of the at least one wall structure 170 may be the same as or different from the substrate 110, and the present invention is not limited thereto.
在製作的過程中，牆體結構170可形成在設置感測元件130以及多個發光元件120之後且形成在透光膠體固化層140之前。或者，亦可先將基板110製作成凹槽狀，以凹槽邊緣的凸出部分作為牆體結構170。換句話說，至少一牆體結構170與基板110可為一體成型。至少一牆體結構170的設置可減少在灌入透光 膠體時因加大灌膠壓力而造成連接線160被沖斷或感測元件130位移而失效的問題，進而有助於提升取像模組100A的良率。同時，提供取像模組100A較佳的結構強度。在一實施例中，可在形成透光膠體固化層140之後藉由切割製程移除牆體結構170，如此亦可形成圖1A所示的取像模組100。 In the manufacturing process, the wall structure 170 may be formed after the sensing element 130 and the plurality of light-emitting elements 120 are disposed and before the light-transmissive colloid curing layer 140. Alternatively, the substrate 110 may be first made into a groove shape, and the protruding portion at the edge of the groove may be used as the wall structure 170. In other words, the at least one wall structure 170 and the substrate 110 may be integrally formed. The arrangement of at least one wall structure 170 can reduce light transmission The problem that the connecting wire 160 is broken or the sensing element 130 is displaced due to the increase of the glue filling pressure during the gelling process, thereby helping to improve the yield of the image capturing module 100A. At the same time, it provides better structural strength of the image capturing module 100A. In one embodiment, the wall structure 170 may be removed by a cutting process after the transparent colloid curing layer 140 is formed, so that the image capturing module 100 shown in FIG. 1A may also be formed.
圖3為本發明的第三實施例的取像模組的剖面示意圖。請參照圖3，取像模組100B與圖1A的取像模組100類似。兩者的主要差異如下所述。取像模組100B還包括蓋板180。蓋板180設置於透光膠體固化層140上並覆蓋至少一溝槽142，其中至少一溝槽142中的光傳遞介質包括空氣。蓋板180的材質例如為玻璃或是透明塑膠。在一實施例中，蓋板180可透過黏著層(未繪示)貼覆在透光膠體固化層140上。黏著層可以是黏著膠體或雙面膠。如此一來，可進一步增強阻隔水氣能力及保護取像模組100B內部元件(如防止透光膠體固化層140刮傷)。在另一實施中，蓋板180也可藉由固定機構件而固定在透光膠體固化層140上，如此便可省略黏著層。 3 is a schematic cross-sectional view of an image capturing module according to a third embodiment of the present invention. Referring to FIG. 3, the image capturing module 100B is similar to the image capturing module 100 of FIG. 1A. The main differences between the two are described below. The image capturing module 100B further includes a cover 180. The cover plate 180 is disposed on the transparent colloid curing layer 140 and covers at least one groove 142. The light transmission medium in the at least one groove 142 includes air. The material of the cover plate 180 is, for example, glass or transparent plastic. In one embodiment, the cover plate 180 can be pasted on the transparent colloid curing layer 140 through an adhesive layer (not shown). The adhesive layer may be an adhesive gel or a double-sided adhesive. In this way, it is possible to further enhance the ability to block water vapor and protect the internal components of the image capturing module 100B (for example, to prevent scratches of the transparent colloid curing layer 140). In another implementation, the cover plate 180 can also be fixed on the transparent colloidal curing layer 140 by a fixing mechanism, so that the adhesive layer can be omitted.
在圖3的架構下，取像模組100B也可進一步包括圖2A的牆體結構170。相關的描述請參照前述相關段落，於此便不再重述。 Under the structure of FIG. 3, the image capturing module 100B may further include the wall structure 170 of FIG. 2A. For related descriptions, please refer to the aforementioned related paragraphs, and will not be repeated here.
圖4為本發明的第四實施例的取像模組的剖面示意圖。請參照圖4，取像模組100C與圖1A的取像模組100類似。兩者的主要差異如下所述。取像模組100C還包括光準直元件190。光 準直元件190設置於感測元件130上且位於透光膠體固化層140與感測元件130之間，用以準直化傳遞至感測元件130的光束。光準直元件190例如可選用針孔準直器(pinhole collimator)或者是光纖準直器(fiber collimator)。如此一來，可增加感測元件130感測被待測物反射的光束的光強度，進而提升取像模組100C的辨識率。 FIG. 4 is a schematic cross-sectional view of an image capturing module according to a fourth embodiment of the present invention. Referring to FIG. 4, the image capturing module 100C is similar to the image capturing module 100 of FIG. 1A. The main differences between the two are described below. The image capturing module 100C further includes a light collimation element 190. Light The collimating element 190 is disposed on the sensing element 130 and is located between the transparent colloid curing layer 140 and the sensing element 130 to collimate the light beam transmitted to the sensing element 130. The light collimating element 190 can be, for example, a pinhole collimator or a fiber collimator. In this way, the light intensity of the light beam reflected by the sensing element 130 to be sensed by the sensing element 130 can be increased, thereby improving the recognition rate of the image capturing module 100C.
在圖4的架構下，取像模組100C也可進一步包括圖2A的牆體結構170或圖3的蓋板180。相關的描述請參照前述相關段落，於此便不再重述。 Under the structure of FIG. 4, the image capturing module 100C may further include the wall structure 170 of FIG. 2A or the cover plate 180 of FIG. 3. For related descriptions, please refer to the aforementioned related paragraphs, and will not be repeated here.
圖5為本發明的取像模組的溝槽的另一種剖面示意圖。請參照圖5，取像模組100D與圖1A的取像模組100類似。兩者的主要差異如下所述。在取像模組100D中，溝槽142A的兩個頂角的角度不同。舉例而言，兩個斜面144A中較鄰近所對應的發光元件120的斜面144A與透光膠體固化層140相對於感測元件130的表面所夾的角度的補角為66.8度，兩個斜面144A中較鄰近感測元件130的斜面144A與透光膠體固化層140相對於感測元件130的表面所夾的角度的補角為32.5度，且溝槽142A的底角為90度。在其他實施例中，溝槽142A的兩個頂角的角度也可顛倒，或依據設計需求改變，而不以此為限。另外，溝槽142A的深度H3A係依據上述角度決定。在本實施例中，溝槽142A的深度H3A大於各發光元件120的出光面至透光膠體固化層140相對於感測元件130的表面的距離H5，但不以此為限。 FIG. 5 is another schematic cross-sectional view of a groove of an image capturing module according to the present invention. Referring to FIG. 5, the image capturing module 100D is similar to the image capturing module 100 of FIG. 1A. The main differences between the two are described below. In the image capturing module 100D, the angles of the two apex angles of the groove 142A are different. For example, the angle between the two inclined surfaces 144A, which are closer to the corresponding light emitting element 120 and the transparent colloid cured layer 140 relative to the surface of the sensing element 130, is 66.8 degrees, and the two inclined surfaces 144A The angle between the inclined surface 144A of the middle and relatively adjacent sensing element 130 and the transparent colloid curing layer 140 relative to the surface of the sensing element 130 is 32.5 degrees, and the bottom angle of the groove 142A is 90 degrees. In other embodiments, the angles of the two apex angles of the groove 142A may be reversed or changed according to design requirements, without being limited thereto. The depth H3A of the trench 142A is determined based on the above-mentioned angle. In this embodiment, the depth H3A of the trench 142A is greater than the distance H5 from the light-emitting surface of each light-emitting element 120 to the surface of the transparent colloid-cured layer 140 relative to the sensing element 130, but is not limited thereto.
在本實施例中，溝槽142A中填充有透光材料F1，此透光材料F1的折射率大於透光膠體固化層140的折射率。因此，當發光元件120所發出的光束L傳遞至溝槽142A時，部分的光束L將被鄰近發光元件120的斜面144A全反射，而部分的光束L會通過鄰近發光元件120的斜面144A且朝遠離感測元件130的方向傳遞。如此一來，可以避免發光元件120所發出的光束L直接照射至感測元件130，進而降低光干擾。 In this embodiment, the groove 142A is filled with a light-transmitting material F1, and the refractive index of the light-transmitting material F1 is greater than the refractive index of the light-transmissive colloid curing layer 140. Therefore, when the light beam L emitted from the light emitting element 120 is transmitted to the groove 142A, part of the light beam L will be totally reflected by the inclined surface 144A adjacent to the light emitting element 120, and part of the light beam L will pass through the inclined surface 144A adjacent to the light emitting element 120 and be directed toward Passing away from the sensing element 130. In this way, the light beam L emitted from the light-emitting element 120 can be prevented from being directly irradiated to the sensing element 130, thereby reducing light interference.
圖6為本發明的取像模組的溝槽的又一種剖面示意圖。請參照圖6，取像模組100E與圖1A的取像模組100類似。兩者的主要差異如下所述。在取像模組100E中，溝槽142B為U型溝槽。具體地，溝槽142B具有相對且相互平行的兩個側面146及底面148。依據製作方式的不同，底面148可能是平面、傾斜面或曲面。 6 is another schematic cross-sectional view of a groove of an image capturing module according to the present invention. Referring to FIG. 6, the image capturing module 100E is similar to the image capturing module 100 of FIG. 1A. The main differences between the two are described below. In the image capturing module 100E, the groove 142B is a U-shaped groove. Specifically, the trench 142B has two side surfaces 146 and a bottom surface 148 that are opposite and parallel to each other. Depending on the manufacturing method, the bottom surface 148 may be a flat surface, an inclined surface, or a curved surface.
U型溝槽除了可藉由折射來改變光束的行徑路徑之外，還可利用鄰近發光元件120的側面146將傳遞至該側面146的光束全內反射，使光束朝遠離感測元件130的方向傳遞。在本實施例中，溝槽142B的深度H3B大於各發光元件120的出光面至透光膠體固化層140相對於感測元件130的表面的距離H5，以使傳遞至溝槽142B鄰近發光元件120的側面146的大部分光束在該側面146經由全內反射而朝遠離感測元件130的方向傳遞。 In addition to changing the path of the beam by refraction, the U-shaped groove can also use the side 146 adjacent to the light emitting element 120 to totally internally reflect the beam transmitted to the side 146, so that the beam is directed away from the sensing element 130. transfer. In this embodiment, the depth H3B of the trenches 142B is greater than the distance H5 from the light-emitting surface of each light-emitting element 120 to the surface of the transparent colloid-cured layer 140 with respect to the sensing element 130, so that the transmission to the trenches 142B is adjacent to the light-emitting element 120 Most of the light beams of the side surface 146 are transmitted away from the sensing element 130 through the total internal reflection on the side surface 146.
在一較佳的實施例中，溝槽142B的寬度D2(如底面148的寬度D2)、溝槽142B所對應的發光元件120的其中之一至溝槽 142B的距離D1以及感測元件130至溝槽142B的距離D3皆為所對應的發光元件120的其中之一至感測元件130的距離D的三分之一，但本發明不以此為限。 In a preferred embodiment, one of the width D2 of the trench 142B (such as the width D2 of the bottom surface 148) and the light emitting element 120 corresponding to the trench 142B to the trench The distance D1 of 142B and the distance D3 of the sensing element 130 to the trench 142B are both one-third of the distance D of the corresponding light-emitting element 120 to the sensing element 130, but the invention is not limited thereto.
在本實施例中，溝槽142B中填充有透光材料F2。透光材料F2的折射率小於透光膠體固化層140的折射率，以產生全內反射。然而，在其他實施例中，也可省略透光材料F2。 In this embodiment, the trench 142B is filled with a light-transmitting material F2. The refractive index of the light-transmitting material F2 is smaller than the refractive index of the light-transmissive colloid curing layer 140 to generate total internal reflection. However, in other embodiments, the light transmitting material F2 may be omitted.
圖7A至圖7B分別為本發明的取像模組的溝槽的再兩種剖面示意圖。請參照圖7A與圖7B，取像模組100F、100G與圖1A的取像模組100類似。兩者的主要差異如下所述。在取像模組100F、100G中，溝槽142C、142D為倒梯形溝槽。具體地，溝槽142C(或溝槽142D)具有兩個斜面144B(或兩個斜面144C)及底面148。在本實施例中，取像模組100F、100G的倒梯形溝槽皆為倒立的等腰梯形，但不以此為限。 7A to 7B are schematic cross-sectional views of two types of grooves of the image capturing module of the present invention. Please refer to FIGS. 7A and 7B. The image capturing modules 100F and 100G are similar to the image capturing module 100 of FIG. 1A. The main differences between the two are described below. In the image capturing modules 100F and 100G, the grooves 142C and 142D are inverted trapezoidal grooves. Specifically, the groove 142C (or the groove 142D) has two inclined surfaces 144B (or two inclined surfaces 144C) and a bottom surface 148. In this embodiment, the inverted trapezoidal grooves of the image capturing modules 100F and 100G are all inverted isosceles trapezoids, but not limited thereto.
倒梯形溝槽除了可藉由折射來改變光束的行徑路徑之外，還可利用鄰近發光元件120的斜面144B(或斜面144C)將傳遞至該斜面144B(或斜面144C)的光束全內反射，使光束不會直接射到感測元件130的感測面。在取像模組100F、100G中，溝槽142C、142D的深度H3C、H3D小於各發光元件120的出光面至透光膠體固化層140相對於感測元件130的表面的距離H5，以使傳遞至溝槽142C、142D的底面148的大部分光束在該底面148經由全內反射而轉向，從而不會直接射到感測元件130的感測面(如圖7A所示)。 In addition to the inverted trapezoidal groove, which can change the path of the light beam by refraction, the inclined beam 144B (or inclined surface 144C) adjacent to the light emitting element 120 can be used to totally internally reflect the light beam transmitted to the inclined surface 144B (or inclined surface 144C). This prevents the light beam from directly hitting the sensing surface of the sensing element 130. In the image capturing modules 100F and 100G, the depths H3C and H3D of the grooves 142C and 142D are smaller than the distance H5 from the light emitting surface of each light emitting element 120 to the surface of the transparent colloid curing layer 140 with respect to the sensing element 130, so that the transmission Most of the light beams to the bottom surface 148 of the grooves 142C, 142D are redirected on the bottom surface 148 via total internal reflection, so that they do not directly hit the sensing surface of the sensing element 130 (as shown in FIG. 7A).
在本實施例中，溝槽142C、142D中填充有透光材料F3，其中透光材料F3的折射率小於透光膠體固化層140的折射率，以產生全內反射。 In this embodiment, the grooves 142C and 142D are filled with a light-transmitting material F3, wherein the refractive index of the light-transmitting material F3 is smaller than the refractive index of the light-transmissive colloid curing layer 140 to generate total internal reflection.
圖8為本發明一實施例的電子裝置的示意圖。請同時參照圖1A及圖8，電子裝置200包括取像模組100、紅外帶通濾光層210以及顯示元件220。取像模組100可選用上述圖1A的取像模組100，因此不再重述其詳細結構及實施方式。在其他實施例中，取像模組100亦可置換成其他實施例所記載的取像模組。 FIG. 8 is a schematic diagram of an electronic device according to an embodiment of the invention. Referring to FIG. 1A and FIG. 8 at the same time, the electronic device 200 includes an image capturing module 100, an infrared bandpass filter layer 210, and a display element 220. The image capturing module 100 can be selected from the image capturing module 100 shown in FIG. 1A, and therefore its detailed structure and implementation manners are not repeated. In other embodiments, the image capturing module 100 may be replaced with the image capturing module described in other embodiments.
在本實施例中，取像模組100中的多個發光元件為紅外光發光元件，例如是紅外發光二極體(IR-LED)。紅外帶通濾光層210設置於取像模組100上(例如位於圖1A的透光膠體固化層140上)，紅外帶通濾光層210用以使各發光元件120發出的光束L以及光束L被待測物10反射的部分(即圖1A所繪示的光束L’)通過。 In this embodiment, the plurality of light emitting elements in the image capturing module 100 are infrared light emitting elements, such as infrared light emitting diodes (IR-LEDs). The infrared band-pass filter layer 210 is disposed on the image capturing module 100 (for example, on the transparent colloid curing layer 140 in FIG. 1A). The infrared band-pass filter layer 210 is used for the light beam L and the light beam emitted from each light-emitting element 120. The portion L reflected by the object to be tested 10 (ie, the light beam L ′ shown in FIG. 1A) passes through.
圖9為本發明一實施例的紅外帶通濾光層的波長-穿透率關係圖。請同時參照圖8及圖9，在本實施例中，紅外帶通濾光層210可以讓波長為800nm至940nm(紅外光波段)的光束通過，且可以過濾波長為800nm至940nm以外的光束。在其他實施例中，可選用讓波長為840nm至860nm的光束或波長為900nm至940nm的光束通過的紅外帶通濾光層210，但本發明並不限於此。紅外帶通濾光層210的設置可避免其他波段光束(例如可見光波段)傳遞至感測元件130，而有助於減少環境光束的干擾，進而提 升電子裝置200的辨識能力。 FIG. 9 is a wavelength-transmittance relationship diagram of an infrared bandpass filter layer according to an embodiment of the present invention. Please refer to FIG. 8 and FIG. 9 at the same time. In this embodiment, the infrared band-pass filter layer 210 can pass light beams with a wavelength of 800 nm to 940 nm (infrared light band), and can filter light beams with a wavelength other than 800 nm to 940 nm. In other embodiments, an infrared band-pass filter layer 210 that passes a light beam with a wavelength of 840 nm to 860 nm or a light beam with a wavelength of 900 nm to 940 nm may be selected, but the present invention is not limited thereto. The setting of the infrared band-pass filter layer 210 can prevent other wavelength band light beams (such as visible light bands) from being transmitted to the sensing element 130, thereby helping to reduce the interference of the ambient light beam, thereby improving the Identification capability of the electronic device 200.
請參照圖8，顯示元件220設置於紅外帶通濾光層210上。顯示元件220例如為薄膜電晶體液晶顯示器(Thin Film Transistor Liquid Crystal Display,TFT-LCD)、微型發光二極體顯示器(Micro Light Emitting Diode display,Micro LED display)或有機發光二極體顯示器(Organic Light Emitting Diode display,OLED display)，但不以此為限。 Referring to FIG. 8, the display element 220 is disposed on the infrared band-pass filter layer 210. The display element 220 is, for example, a Thin Film Transistor Liquid Crystal Display (TFT-LCD), a Micro Light Emitting Diode display (Micro LED display), or an Organic Light Emitting Diode display (Organic Light Emitting Diode display, OLED display), but not limited to this.
此外，電子裝置200可選擇性地包括設置在紅外帶通濾光層210上的硬塗層230，以保護紅外帶通濾光層210，進而增加電子裝置200的耐用性。另外，顯示元件220可藉由黏著層240黏著於硬塗層230上。 In addition, the electronic device 200 may optionally include a hard coating layer 230 disposed on the infrared band-pass filter layer 210 to protect the infrared band-pass filter layer 210, thereby increasing the durability of the electronic device 200. In addition, the display element 220 may be adhered to the hard coating layer 230 through an adhesive layer 240.
綜上所述，在本發明的取像模組及電子裝置中，透光膠體固化層具有至少一溝槽，且至少一溝槽位於感測元件與多個發光元件之間。至少一溝槽可以避免發光元件所射出的光束直接照射至感測元件，進而降低光干擾，並提升取像模組的辨識能力。在一實施例中，取像模組可以製作為全平面的指紋辨識裝置，進而增加與其他裝置組裝的相容性。此外，藉由壓膜注膠的製作方式，取像模組可以被大量生產，進而降低生產成本。另外，由於透光膠體固化層的至少一溝槽可以降低光干擾，因此可以省略遮光元件的設置，進而可以簡化製程步驟、減少製程所需元件並有助於縮減模組面積。在另一實施例中，取像模組還可包括蓋板，以進一步增強阻隔水氣能力及保護取像模組內部元件。在又一實 施例中，取像模組還可包括光準直元件，以增加感測元件感測被待測物反射的光束的光強度，進而提升取像模組的辨識率。 In summary, in the image capturing module and the electronic device of the present invention, the transparent colloid curing layer has at least one groove, and the at least one groove is located between the sensing element and the plurality of light emitting elements. The at least one groove can prevent the light beam emitted by the light emitting element from directly irradiating the sensing element, thereby reducing light interference and improving the recognition ability of the image capturing module. In one embodiment, the image capturing module can be made as a full-plane fingerprint recognition device, thereby increasing the compatibility with other device assembly. In addition, through the production method of film injection, the image capturing module can be mass-produced, thereby reducing the production cost. In addition, since at least one groove of the transparent colloid curing layer can reduce light interference, the arrangement of the light shielding element can be omitted, thereby simplifying the manufacturing steps, reducing the components required for the manufacturing process, and helping to reduce the module area. In another embodiment, the imaging module may further include a cover plate to further enhance the ability to block moisture and protect the internal components of the imaging module. In another real In the embodiment, the image capturing module may further include a light collimating element to increase the light intensity of the light beam reflected by the sensing element to be detected by the sensing element, thereby improving the recognition rate of the image capturing module.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
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| CN108735764A (en) | 2018-11-02 |
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| TW201839667A (en) | 2018-11-01 |
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| TWI630557B (en) | 2018-07-21 |
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| TWI642001B (en) | 2018-11-21 |
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