TWI241688B - Photosensitive semiconductor device and method for fabrication the same - Google Patents

Abstract

A photosensitive semiconductor device and a method for fabricating the same are proposed, in which a tape carrier with an opening and a photosensitive chip having a plurality of stud bumps formed thereon are provided respectively, and a plurality of conductive elements coated on a first surface of the tape carrier extend inwardly to the opening, wherein the photosensitive chip accommodated within the opening is attached on the conductive elements by the corresponding stud bumps. Then, an encapsulant is formed on an opposite second surface of the tape carrier to encapsulate the opening, and a transparent unit is attached on the first surface of the tape carrier to cover another side of the opening. Finally, a lens holder is mounted on the first surface of the tape carrier, allowing the transparent unit positioned between a lens of the lens holder and the photosensitive chip, thereby providing a thin and low cost photosensitive semiconductor device.

Description

1241688 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a light-sensitive semiconductor structure and a manufacturing method thereof, particularly a low-cost light-sensitive semiconductor structure suitable for an image sensor and a manufacturing method thereof. . [Previous technology] With the advancement of the electronics industry and the advent of the digital age, various electronic products have gradually developed towards the trend of functional integration. It is expected that various products can be integrated on a single portable device to enhance the use of users. Convenient, and then break through the original space constraints. Therefore, for example, Charge Coupled Device (CCD) or CMOS Sensor (CMOS Sensor) is configured in digital cameras, optical scanners, computer cameras (PC Camera) ), Toys, or fingerprint sensors on various types of image sensors (I mage Sensors), how to integrate them into small-sized portable devices such as mobile phones or personal digital assistants (PDAs) is undoubtedly the next generation The challenge of the electronics industry, especially for mobile communication devices such as mobile phones, is that the volume and thickness of the device decrease multiples at almost every interval. Therefore, how to package the semiconductor chip of the image sensor on such a small volume device At the same time, it will not become a development obstacle in its thinning trend, which is obviously one of the major challenges facing the current packaging technology. When it is customary to package such light-sensing semiconductor wafers, because such wafers need to receive radiation or optical signals directly, and they must also avoid the surrounding dust or moisture from entering the chip and impairing its operating performance, Generally, as shown in FIG. 11, such a wafer 60 is connected to a conventional carrier 61 such as a ceramic substrate, and reused fresh

17528 silicon product.ptd page 7 1241688 V. Description of the invention (2) --- The wire 62 (Wlre) electrically connects the chip 60 and the carrier 61, and then transmits a light such as optical glass (optlcal glass). Material 63 is sealed on to form a lid (Lld) to isolate moisture and exert its light transmission function, such as US Patent No. 5, 0 3 7, 7 7 9 and 5, 8 6 5, 9 3 Case 5, Case No. 9 2 3, 9 5 8, Case No. 6, 0 34, 4 2 9 and Case No. 6,384, 4 72, etc., all revealed the inclusion of a ceramic base (Ceramic Leadless Chip Carner, A similar packaging structure including a CLCC) package and a pUstic Leadless Chip Carrier (PLCC) package. Therefore, when such image sensing packages are to be configured as an image sensor module to be integrated in a portable device such as a mobile phone, the package is shown in Figure 12 The carrier 6 is connected to a film 64 (Tape) electrically connected to the outside, and a lens holder 65 (Lens Holder) with a lens 66 is arranged on the film 64 to form a mobile phone part. It can be integrated in the mobile phone to play the function of receiving light signals and capturing images. However, as seen from Figure 12, it can be found that in addition to the necessary wafers 60, transparent materials 6 3 and lens holders 6 5 In addition, it is obvious that the extra thickness and volume have been increased, causing the module to occupy too much space, which has become a major obstacle to the thin development of mobile phones, such as the design of the welding wire 6 2 and the carrier 6 1 on the package. It will make it difficult to reduce the size of the package, and also increase the height of the lens holder 65, or make the film 64 an unnecessary carrier, increasing unnecessary structural thickness, and further improvement is urgently needed, such as the US patent Cases 5, 8 2 1, 5 3 2 and The disclosed 1 6,4 8 3,1 billion text Movies i.e., have similar problems of image sensing module. Therefore, U.S. Patent No. 6,5 8 6, 8 2 4 proposed an improved method

17528 silicon product.ptd page 8 1241688 V. Description of the invention (3) method, which is the same as the first method of recovering the light-sensitive chip to the crystal and encapsulating the colloid through the transparent glass tin ball 7 6 The thickness of the space occupied by the package module 〇 is still inconsistent with the trend of the electrical development of the chip 720, and the yield and the electrical continuity. A hole 7 1 1 3 is opened in the substrate 70 as shown in the figure, so that the hole 71 is accommodated in the hole 71 and is electrically connected to the two active surfaces 72 a of the 2 with a bonding wire 7 3. The glass 74, 7 5 is covered to form a package. In this design, the chip 7 2 can receive external light signals, and is electrically connected through the boundary (such as a mobile phone part) on the substrate 70. Reduced thickness, but this design only reduces the wafer carrier. The height of the line arc formed on the layout of the bonding wire 7 3 and the cloth cause unnecessary expansion in volume. Furthermore, the connection with the bonding wire 7 3 is also connected with In the electronics industry, with high accumulation and high yield, the wiring density not only has a certain upper limit, but also its wiring quality is not as easy to control as other electrical connection methods. • The kind is opened as shown in the figure. Block 8 la, medium 'Band 8 2 is connected to this property and connected to the conductive bumps possessed by the connection' is preceded by the hole, and the 8 1 b is transmitted through the transparent wafer 8 3, and the transparent sheet reaches the crystal system; At the same time, the same as the US patent publication (Bump) electrical-elastic printing to prepare a surface light sheet 82, The 8th and the 2nd printed printed film 8 on the film 8 3, and the transparent light can be mentioned in the conventional technology ## 2 0 0 2/0 1 7 1 0 3 1 case is to reveal the connection chip For a package module, for example, a circuit board 80 (Flexible PCB) is formed with a layout of lines 7 9 and conductive bumps. A photosensitive chip 8 3 is housed in the hole and a bump 8 1 a is electrically connected to the transparent The second bump 8 1 b on the light-transmitting sheet 8 2 and the circuit board 80, and the electrical properties between the encapsulation gel 8 4 and the encapsulation sheet 82 and the printed circuit board 80 'this design can indeed reduce the welding wire arc I / 〇 density on Toyo 6 Hai wafer 8 3, full

1241688

1241688 V. Description of the invention (5) Flexible circuit board 8 7

Bump), and the gold bump 86 is used to connect the Flenble Circuit B0ard and Ternnnal, so that the chip 85 is electrically on 87a, and the chip 85 can pass through the elasticity. ΐ: To the flexible circuit J, the light transmitting plate 88 above it receives the light signal; the hole of the π plate 87 and the cover plate 8 are glued to the elastic circuit board 8 7 ^ " Breaking the light-transmitting film Luyouyou Α without breaking the circuit layout on the light-transmitting film 8 8 can indeed reduce the cost and difficulty of making the borrower + Hachijo π: cost and difficulty. When the wafer 8 5 is opened / formed to the bump 8 86, boxes 7 ... i are still needed, and at least two UBM structure layers are formed in advance at the corresponding pad positions of the wafer 8 5 and cannot be lowered. This part = ^ copy, and the elastic circuit board 87 is only used as a conductive η shell for electrical connection. Its surface is not provided with complex conductive traces, so that the package still needs to be as shown in Figure 15 As shown, after the package is completed, the two ends of the flexible circuit board 87 are connected to a rigid printed circuit board 89, and the chip 85 is accommodated in the rigid printed circuit board 89. In the slot 89a (Notch), the light signal received by the chip 85 can be transmitted to the outside by the gold bump 86, the flexible circuit board 87, and the hard printed circuit board 89, which not only causes unnecessary signals The transmission path affects the electrical properties, and the material and weight of the hard printed circuit board 89 are not suitable for light, thin and short cell phones. The structure disclosed in U.S. Patent No. 6,5 4 8,7 5 9 is also very close to the aforementioned technology. The difference is that the structure connects the wafer 90 to the conductive bump 9 1 as shown in FIG. 6 The protrusion 9 3 a (T ab) is placed on a substrate 9 2 conductive trace 9 3. The protrusion 9 3 a protrudes from the hole 9 2 a of the substrate 92 and the wafer 90 is accommodated in The hole 9 2 a is covered with a light-transmitting sheet 9 4 and contacts the active surface 9 0 a of the wafer 90. However, the biggest disadvantage of this structure is that

17528 硅 品 .ptd Page 11 1241688 ~ '~ ---------- ______ 5. Description of the invention (6) The carrier used is a commonly known ceramic, ^ or FR4 substrate 92, and its material cost and weight The thickness of the flexible circuit board 8 7 used in the aforementioned US Patent Publication No. 2 0 2/0 0 9 6 7 3 is f, which is more inconsistent with the requirements of human mobile phone devices: and the substrate 92 material In manufacturing; J is less easy to cut, which will indirectly lead to high production costs and cannot perform batch manufacturing; at the same time, this structure directly pastes the transparent sheet 94 on the active surface 90a of the wafer 90 In the above, although the purpose is to prevent moisture or dust from invading the photosensitive area 90b of the wafer 90, the light-transmitting sheet 94 may instead damage the surface of the photosensitive area 90b due to poor surface flatness. Destroy the efficiency of the photosensitive chip 90. In summary, it is known that until the development of related technologies, it is still difficult to have a packaging technology that can fully meet the needs of portable devices such as mobile phones to integrate functions such as image capture into thinner mobile phone components in the future. The aforementioned conventional technical analysis of 'when it is known if one can develop a method that does not use a substrate as a carrier and does not use a bonding wire as an electrical connection, at the same time, does not need to form a UBM structure layer, and does not require wiring on a light-transmitting material, or even The semiconductor structure that adds extra volume due to its packaging will solve all the problems mentioned above, and then bring the component integration technology of portable devices into a new generation. On the contrary, if the existing packaging technology still cannot break through the aforementioned bottlenecks, Then the current seemingly endless trend of thinning in the electronics industry is likely to stagnate, and it is difficult to improve and break through. Therefore, how to develop a photosensitive semiconductor structure and its manufacturing method that can be applied to portable devices to reduce the cost, quality, and volume of conventional technologies, and then enable mass production ’without the need for extra packaging of its chips.

17528 Silicon Products · Ptd Page 12 1241688 V. Description of the Invention (7) Avoiding moisture damage and the chip is indeed an urgent issue in the field of package R & D. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a low-cost light-sensing semiconductor structure and a method for manufacturing the same. Another object of the present invention is to provide a light-weight and light-weight semiconductor structure having a small volume and a method for manufacturing the same. Another object of the present invention is to provide a photosensitive semiconductor structure which can be applied to a portable device and a method for manufacturing the same. Still another object of the present invention is to provide a light-sensitive semiconductor structure without manufacturing a semiconductor wafer and a method for manufacturing the same. Still another object of the present invention is to provide a light-sensitive semiconductor structure capable of preventing moisture damage and a semiconductor wafer and a method for manufacturing the same. Another object of the present invention is to provide a photosensitive semiconductor structure capable of stably holding a semiconductor wafer and a method for manufacturing the same. Another object of the present invention is to provide a photosensitive semiconductor structure and a method for manufacturing the same without using a high-cost substrate. Yet another object of the present invention is to provide a light-sensitive semiconductor structure and a method for manufacturing the same without the need to produce a high-cost multilayer bump bottom metallization (UBM) structure layer. Yet another object of the present invention is to provide a light-sensitive semiconductor structure with easy wiring and favorable for mass production, and a method for manufacturing the same. To achieve the foregoing and other objectives, the light-sensitive semiconductor structure provided by the present invention includes a film carrier having a first surface, and

17528 硅 品 .ptd Page 13 1241688 V. Description of the invention (8) The second surface and the opening through the film carrier, and the first surface is provided with a plurality of conductive members extending into the opening; it has a function Surface and a non-active surface light-sensitive chip, a plurality of conductive bumps (Stud Bump) are formed on the active surface, so that the conductive bumps are respectively connected to the conductive member, and the light sense is formed. The wafer is accommodated in the opening of the film carrier; a light-transmitting unit is connected to the first surface of the film carrier to cover the opening; a sealing gel is coated on the film carrier A part of the second surface is used to cover the opening; and a lens carrier having a lens (L ens) is connected to the first surface of the film carrier, so that the light transmitting unit is positioned in the Between the lens and the active surface of the photosensitive wafer. The method for manufacturing a light-sensitive semiconductor structure provided by the present invention includes the steps of preparing a film carrier having a first surface, an opposite second surface, and an opening penetrating the film carrier, and The first surface is provided with a plurality of conductive members extending into the opening; a light-sensitive wafer is prepared, and the light-sensitive wafer has an active surface and a non-active surface; on the active surface of the light-sensitive wafer A plurality of conductive bumps (Stud Bump) are formed on the substrate; the light-sensitive wafer is bonded to the conductive member of the film carrier by the conductive bumps ^ so that the light-sensitive chip is accommodated in the film carrier. In the opening; covering a part of the film carrier with a sealing gel to cover the opening; and placing a light transmitting unit on the first surface of the film carrier to cover the opening And placing a lens carrier on the first surface of the film carrier so that the light transmitting unit is positioned between the lens (Lens) of the lens carrier and the active surface of the photosensitive wafer. The aforementioned conductive bumps are made by a wire bonding (W i r e Β ο n d i n g) technology.

17528 Shi Xipin.ptd Page 14 1241688 V. Description of the invention (8) The formed gold bumps are bonded with gold wires to the pads of the light-sensitive wafer, and the gold wires are stretched to make them Break to quickly form a low-cost spherical bump, and by the easy-to-use automatic film bonding (TAB) inner guide pin bonding technology (I LB), the plurality of bumps are thermocompression bonded to their corresponding counterparts On most conductive parts. The aforementioned conductive member is an inner guide pin etched from a copper material, and the light-sensitive chip can be electrically connected to the inner guide pin by the conductive bump, and then by the outer guide on the film carrier. The light transmission unit is electrically connected to the outside; in addition, the light transmission unit is a glass sheet, an infrared filter (IRF i 11 er), or a light transmission material layer coated on the film carrier, and the package The colloid can be partially or completely covered on the non-active surface of the photosensitive chip to seal the cavity of the film carrier. At the same time, the light-sensitive chip has a photosensitive area on the active surface, which is an image sensor (Image Sensor), and can receive the light entering the photosensitive area through the lens and the light-transmitting unit. A light signal, and the signal is transmitted to the film carrier to the outside through the conductive bump after the signal is converted; the light-sensitive chip may also be a light-emitting diode (LED) to send the light signal and pass through the The light transmitting unit and the lens are output to the outside. Therefore, the present invention is to produce a low-cost and thin special semiconductor structure by using the aforementioned film carrier, conductive bumps formed by bonding wires, and the technology of in-film guide pins. The lens carrier is arranged in a miniature portable device such as a mobile phone, thereby solving the problems of cost and volume of the conventional structure, which fully meets the future development trend of integrating various electronic components into one.

17528 得 品 .ptd Page 15 1241688 V. Description of the Invention (10) [Embodiments] The following is a description of specific embodiments of the present invention. Those skilled in the art can easily understand the contents disclosed in this specification. Other advantages and effects of the present invention. The present invention can also be implemented or applied through other different specific examples, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the spirit of the present invention. 1A to 1I are flowcharts of the manufacturing method of the preferred embodiment of the present invention. First, a film carrier 10 (Tape Carrier) is prepared as shown in FIG. 1A, which is a conventional film carrier package. The film 10 used in the Tape Carrier Package (TCP) has a cavity 1 1 in the center of the film 10, and a plurality of inner guide feet 12 (Inner Lead) and outer guide feet ( Outer Lead (not shown), a solder layer 13 (Pre-Solder) is preset on the inner guide pin 12 and the inner guide pin 12 is formed on the edge of the cavity 1 1 and extends to The crystal cavity 11 is suspended in the cavity; then, as shown in FIG. 1B, a light-sensitive wafer 20 is prepared, the size of which is smaller than that of the crystal cavity 11 of the film carrier 10, and the wafer 20 It can be an image sensor such as a CCD or CMOS sensor, and its active surface 21 has a photosensitive area 22, which can be used to receive radiation or light signals; as shown in Figure 1C, The positions of the bonding pads 23 (bond pads) around the active surface 21 of the wafer 20 directly form a plurality of protruding bumps 2 4 (S tud bumps) by a wire bonding (Wire Β ο nd) technology, and The plurality of protruding bumps 24 correspond to the positions of the inner guide pins 12 on the film carrier 10; as shown in FIG. 1D, the inner guide pin bonding technology (Inner Lead Bonding, ILB) is used to collectively Gang Bond

17528 石 夕 品 .ptd Page 16 1241688 V. Description of the invention (11) The chip 20 is thermo-compression bonded to the plurality of inner guide pins by the plurality of protruding bumps 2 4 respectively. 1 2 of the preset solder 13 so that the chip 20 is housed in the cavity 13 and suspended by the majority of the inner guide pins 12 and the chip 20 can be borrowed The protruding bump 24 is electrically connected to the inner guide pin 12 on the upper surface of the film 10, and then is electrically connected to the outside by the outer guide pin. At this time, the photosensitive region 2 2 on the wafer 20 is Exposed in the center of the cavity 1 1; then, as shown in the figure, a non-active surface 2 5 of the wafer 20 is covered with a sealing gel 30 to cover the wafer 20 and the film 1 〇, and the chip 20 can be positioned, and the encapsulating gel 30 can be filled around the plurality of protruding bumps 24 to ensure that the bonding is stable; as shown in FIG. 1F, borrow an adhesive 3 1 and a transparent sheet 3 2 having a larger area than the cavity 20 is bonded to the film carrier 10, and the transparent sheet 32 is sealed on the wafer 20 to avoid The chip 2 The working surface of 0 is exposed, and it can play a filtering effect before the radiation or light signal enters the photosensitive area of the chip. At the same time, the periphery of the light transmitting sheet is adhered to the film carrier. !! 〇, so it can also be used as the horizontal positioning base of the wafer 20 to further stabilize the wafer 20 and the majority of the inner guide pins 12 suspended in the crystal cavity 11, wherein the light-transmitting sheet 32 The material is selected from any light-transmissive material, and can be made into a plate-shaped optical glass sheet or an infrared filter (I r F ”iter). Then, as shown in FIG. 1G, a lens holder 40 (Lens Holder) can be arranged on the film carrier 10, so that the lens holder 40 is positioned above the transparent sheet 32, and The spiral hole 4 1 (T hreading ο ο 1 e) of the lens holder 40 is directly opposite the central position of the translucent sheet 3 2, and a wafer cover 42 is disposed on the opposite side of the film carrier 10 as shown in the figure ( Chip Cover) with

Π528 石 夕 品 .ptd Page 17 1241688 V. Description of the invention (12) '~ ------ The seat fiber connects and seals the Shaw chip 2G, and protects the non-active surface 25 of the chip 20 and enhances the whole Hand holding date μ% ^ ^ ^ 44 (Lens) ^ ^ ^ Λ; 41 # ^ 1 ^? F " In the spiral hole 41, the screwing position is determined by the focal distance adjustment between 2 ° and the wafer w The low cost and low power of the invention are as shown in Figure 11 and the constitutive structure is completed. The magic system is ί 7 Γ +, a small and light-weight light-sensitive semiconductor is implanted. The image sensor module in the portable device can also be cut when used, and can be further beneficial. 0: Cut the film 10 that is far easier to cut and perform a large number of batches; The knee carrier 10 is easy to cut As shown in Qiu ·, +, and in the foregoing manufacturing method, the top view of the carrier 10 in this embodiment is a polysterimide (Pt) material of 4t film as shown in FIG. 2 as a polyimide (P 〇1 Y mi de) or between 35 and 70 mm, a thin film made of / gan, the width of the film is about the size of the crystal cavity 1 1 and the size " the central system has a square cavity 1 The area of the crystal cavity 11 is set to + the light-sensitive chip 20 used, so that the number of the inner guide pin 12 and the outer guide 2 is larger than the area of the wafer 20, and secondly, the width is about It is made of copper foil (Cu 1) by etching from 18 to 35 糸, 700 I / O pins, read between m, and its wiring density can reach up to about the material or manufacturing cost :! The wire bonding technology used is high, and the wiring difficulty is preset with soldering on the guide pin: the extension is lower than the flip-chip technology; when the 'inside to the pre-solder', the inner guide pin 12 extends too short to form wafer 2. : The length of the part 12a needs to be specially designed by the host. ‘Non-disturb the transmission of the light signal and the difficulty in placing it’. At the same time, it should not be too long to dry.

1241688 V. Description of the invention (13) ^ it The protruding bumps on the active surface 21 of the wafer 20 are Γ / ί quality bumps, but the material can also be other examples. The bumps 2 use fresh wire technology and a general wire bonding machine. (Wire Bonder), as shown in Figure 3A, a gold wire 51 is placed in a capillary bonding tool 50 (Capillary) made of high temperature resistant material, and the electronic ignition (Spark)

Discharge) technology and a spheroid 52 is sintered at the end of the gold wire 51; then, as shown in Figure 3B, the sphere 5 2 is pressed onto the predetermined pad 23 of the wafer 20 to make the sphere 52 under pressure. Deformation 'and use ultrasonic welding (ultrasonic Welding) technology to make it knot on the pad 23; as shown in Figure 3C, pull up the bonding tool 50 to make the sphere 5 2 subject to The gold wire 51 is pulled and deformed and a conical protrusion 53 (Conical Protrusion) appears; finally, as shown in FIG. 3D, the bonding tool 50 is continuously pulled up to make the gold wire 51 and the sphere 5 2 is separated and fractured, at this time, the sphere 5 2 is a conductive protruding bump 2 4 formed on the pad 23; in addition, the protruding bump 2 4 is stretched by the gold wire 51, so it is The surface will have a residual protruding end 5 4 (Wire Tai 1) as shown in the figure, so after all the bumps 24 are formed as shown in FIG. 3E, a horizontal compression bonding (Coined) on the wafer 20 may be performed. ) Step, so that a horizontal bonding surface 55 (Flatter Top Surface) is formed on the plurality of bumps 24, and each bump 24 has a uniform height, its height or The diameter can reach an accuracy of 7 5 // m. Therefore, with this wire bonding technology, most bumps 2 4 can be made by simple wire bonding equipment, and its mass production speed can reach as many as 12 bumps 2 4 per second. And the pitch (P itch) of each bump 2 4 can be less than 1 0 0 # m

17528 silicon product. Ptd page 19 1241688 V. Description of the invention (14) To achieve the ideal production requirements and layout density, at the same time, there is no need to form a UBM structure layer on the pad 23 of the chip 20, and In the subsequent steps, other wafer processes such as electricity mining, lithography, money engraving, or reflow (^ afer

Processing), which fully solves many conventional problems of bonding wire or flip-chip connection. Therefore, by using the aforementioned bump formation method, at least one row of protruding bumps located on the periphery of the wafer 20 can be formed around the photosensitive area 22 of the active surface 21 of the wafer 20 as shown in FIG. 4. 2 4, the position of the protruding bump 24 corresponds to the position of most of the inner guide pins 12 extending to the film 10 in the crystal cavity as shown in FIG. 2 at this time, as shown in FIG. 1 or FIG. As shown in the top view of the film carrier 10 in FIG. 5, the protruding bump 2 4 is fast-pressed on the corresponding inner guide leg 2 2 by hot pressing using the inner guide pin welding technology (I LB). Preset solder 3, and electrically connect the chip 20 and the film carrier}. In addition, the aforementioned lens holder 40 arranged on the film carrier i 0 so as to correspond to the light transmitting sheet 32 has a circular spiral hole 41 as shown in FIG. 6. The opened thread corresponds to the peripheral thread 4 5 on the lens element 4 3 so that the lens element 4 3 can be screwed into the spiral hole 41 according to the peripheral thread 4 5 and adjust the lens 4 4 and The relative distance between the wafers 20 allows the external radiation or light signals to penetrate the lens 44 and focus on the photosensitive area 2 2 on the active surface 21 of the wafer 20 to further exert the light-sensitive wafer 2 〇Effectiveness; it can be used to fix the position of the lens element 4 3 after focusing and positioning or to position it with two adhesives, so as to avoid the lack of the need to continuously adjust the position of the lens 44 with an Adjustment Screw and Quickly find the optimal focus position of the lens 4 4 to greatly reduce operating costs, and

1241688 V. Description of the invention (15) It is also possible to omit the extra steps of conventionally assembling the lens element on the substrate, so as to avoid the conventional problems such as changing the focus of the lens after the warpage of the substrate. In summary, by disposing the lens 4 4, the light-transmitting sheet 32, and the light-sensitive chip 20 in the light-sensitive semiconductor structure disclosed by the present invention, external radiation or light signals can be transmitted through the lens 4 4. After filtering through the light-transmitting sheet 32, it is focused on the active surface 21 of the wafer 20, and the active surface 21 can be used to receive electromagnetic radiation (E 1 ectr 〇magnetic R adiati 〇η), Infrared Radiation, Ultraviolet Light, or visible light, etc., to convert the received signal into an electrical signal and transmit it through the protruding bump 2 4 to the inner guide pin on the film 10 12. Retransmit the inner guide pin 12 to its outer guide pin, and then to external parts such as mobile phones; meanwhile, the chip 20 can be a light receiver in addition to a light receiver. A transmitter (Transmi 11 er), for example, the chip 20 may be designed as a light emitting diode (LED) to emit a light signal 'and transmitted to the light transmitting sheet 3 2 and the lens 4 4 to Outside; it is worth mentioning that 'the film 1 〇 The size and configuration of the inner guide pin 丨 2 should be as shown in the upper view of FIG. 5, and a proper distance from the photosensitive area 22 of the chip 20 should be reserved to avoid interference with the front end 1 2 a of the inner guide pin 丨 2 Reception or transmission of the aforementioned optical signals or radiation. Therefore, 'with the preferred embodiment of the present invention, it is known that the semiconductor structure proposed by the present invention is formed by a film carrier 10, a protruding bump 24 formed by a bonding wire, and a tape automatic bonding (TAB). Internal guide pin welding and junction technology, and to produce a low-cost and thin semiconductor structure 'is far more suitable for portable devices such as mobile phones than other conventional technologies;

17528 硅 品 .ptd Page 21 1241688 V. Description of the invention (16) On the one hand, the design is to replace the conventional substrate with a film carrier 10, which can greatly reduce the cost, weight and thickness of the conventional structure, and collect the batch amount. On the other hand, the combination of the protruding bump 24 and the automatic bonding technology of the film also reduces the cost and wiring difficulty of the conventional bump and electrical connection method, without the need for a chip 20 or a transparent sheet. Forming a UBM structure layer on the 2 or performing processes such as electroplating reflow can quickly complete the electrical connection of the wafer 20, which is indeed a great leap forward in technology. In addition, the present invention directly uses the light-transmitting sheet 32 and a small amount The packaging colloid 30 locates the chip 20, so there is no need to add extra packaging steps or packaging carriers, which greatly reduces its occupied volume and cost; furthermore, with the structure designed by the present invention, the The light-transmitting sheet 3 2 covers the active surface 21 of the wafer 20 in a non-contact manner, so as to protect it from moisture or dust, and not to damage the photosensitivity of the wafer 20 due to the surface contact of the light-transmitting sheet 32. District 2 2 At the same time, you can also borrow the large noodles The light-transmitting sheet 32 and the wafer 20 is positioned within the film and the leads 12, as not to make it of the die cavity 11 offset. The semiconductor structure and manufacturing method disclosed in the present invention can be implemented in other ways besides the preferred embodiment shown in the figure. For example, the cross-sectional view of the second embodiment of the present invention shown in FIG. 7 is different from the aforementioned preferred embodiment. The encapsulation gel 30 completely covers the non-active surface 25 of the wafer 20 to ensure the sealing effect of the protruding bump 24 and the active surface 21 of the wafer 20. Although this design will slightly increase the The material cost of the encapsulation gel 30, but since the wafer 20 has been actually covered by the encapsulation gel 30, the configuration of the aforementioned wafer cover 42 can also be reduced. Fig. 8 is a cross-sectional view of a third embodiment of the present invention. This embodiment replaces the light-transmitting sheet 32 used for filtering in the foregoing preferred embodiment with its

17528 石 夕 品 .ptd Page 22 1241688 ^ —-—————— ~-5. Description of the invention (17) Other transparent materials, such as a transparent plastic (transparent P 1 astic) material or a transparent Liquid (Transparent Liquid), so as to coat it on the film carrier 10 and cover the cavity 1 1, and then heat-curing to form a coated light-transmitting layer 3 5 as shown in the figure. Can also play a role in filtering. In addition, in addition to being placed on the film carrier 10, the light-transmitting sheet 32 can also be configured integrally with the lens holder 40. For example, the fourth embodiment of the present invention shown in FIG. A light transmitting sheet 32 is inserted into the lens holder 40 in advance, so that the lens holder 40 is disposed on the film carrier 10 so that the light transmitting sheet 32 is placed on the active surface 2 of the wafer 2 1 and the lens 44 can also perform the same function. In this embodiment, the step of sticking the light-transmitting sheet 3 2 on the film carrier 10 can be eliminated, and the present invention can be further reduced. manufacturing cost. At the same time, if the size of the light-sensitive wafer 20 used in the present invention is too large, in this case, in addition to increasing the size of the crystal cavity 11 on the film carrier 10, it can also be as shown in FIG. According to the fifth embodiment of the present invention, an inner guide pin 12 ′ is formed on the lower surface 10 a of the film carrier, so that the wafer 20 is placed on the inner guide pin 12, and the encapsulation gel 3 is used. 0 and the wafer 20 is positioned on the lower surface 10a of the film carrier 10. At this time, the wafer 20 cannot be accommodated in the cavity 11, and the thickness of the semiconductor structure will be slightly increased. When the image sensing module composed of the semiconductor structure operates, it is still necessary to transmit the optical signals through the lens 4 4 and the light transmitting sheet 3 2 to the chip 2 through the opening of the crystal cavity ^ 1 1. The effect of 〇 on the surface 21. In summary, it can be seen that the special semiconductor structure and its manufacturing method proposed by the present invention can indeed be used in micro-portable devices, and play a role in reducing cost, quality, and volume. At the same time, it can reduce the excess of conventional technology. Yuan

17528 silicon product. Ptd page 23 1241688 V. Description of the invention (18) It is convenient for mass production, and its chip can be fully protected. The above examples are merely illustrative to illustrate the principle of the present invention and its effects, and are not intended to limit the present invention. Anyone skilled in the art can modify and change the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application mentioned later.

17528 碎 品 .ptd Page 24 1241688 Brief description of the drawings [Simplified description of the drawings] Figures 1 A to 1 I are flowcharts of the manufacturing method of the preferred embodiment of the light-sensitive semiconductor structure of the present invention; Figure 2 is The top view of the film carrier of the preferred embodiment of the present invention; Figures 3 A to 3 E are flowcharts of the method for manufacturing the protruding bumps of the preferred embodiment of the present invention; Figure 4 is a diagram of the protruding bumps formed on the wafer Position diagram; Figure 5 is a top view of the film carrier shown in Figure 2 after bonding the wafer; Figure 6 is a schematic diagram of the lens element and lens holder of the preferred embodiment of the present invention; Figure 7 is a schematic view of the present invention Sectional view of the second embodiment; Figure 8 is a sectional view of a third embodiment of the present invention; Figure 9 is a sectional view of a fourth embodiment of the present invention; Figure 10 is a sectional view of a fifth embodiment of the present invention; Fig. 11 is a cross-sectional view of a conventional light-sensing semiconductor package; Fig. 12 is a cross-sectional view of an image sensing module of the semiconductor package shown in Fig. 11; Fig. 13 is a U.S. Patent No. 6, 5 8 6 A cross-sectional view of the package disclosed in No. 8 2 4; FIG. 14 is a US patent Sectional view of the package disclosed in No. 2 0 0 2/0 1 7 1 0 3 1; Figure 15 is disclosed in U.S. Patent Publication No. 2 0 2 2/0 0 9 6 7 3 1 Sectional view of the package; and

] 7528 碎 品 .ptd Page 25 1241688 Brief Description of Drawings Figure 16 is a cross-sectional view of the package disclosed in U.S. Patent No. 6,5 4 8,7 5 9. 10 Film carrier 10a Film lower surface 11 Cavity 12 Inner guide pin 12a Inner guide foot suspension 13 Solder 20 Wafer 21 Active surface 22 Photosensitive area 23 Solder pad 24 Protruding bump 25 Non-active surface 30 Encapsulant 31 Adhesive 32 Light transmitting sheet 40 Lens holder 41 Spiral hole 42 Wafer cover 43 Lens piece 44 Lens 45 Outer thread 50 Capillary bonding tool 51 Gold wire 52 Sphere 53 Conical protrusion 54 Protruded end 55 Horizontal joint surface 60 Wafer 61 Carrier 62 Welding Line 63 Transparent material 64 Film 65 Lens holder 66 Lens 70 Substrate 71 Sub-hole 72 Wafer 72a Active surface 73 Welding wire 74 Transparent glass 75 Encapsulant 76 Tin ball

17528 Shi Xipin.ptd Page 26 1241688

Brief description of the drawing 7 9 circuit 80 elastic printed circuit board 81a first bump 81b second bump 82 light-transmitting sheet 83 chip 84 package gel 85 chip 8 5a active surface 86 gold bump 87 elastic circuit board 87a electrical connection End 88 Transparent plate 89 Hard printed circuit board 8 9a Groove 90 Wafer 90a Active surface 90b Photosensitive area 91 Bump 92 Substrate 92a Substrate hole 93 Conductive trace 9 3a Protrusion 94 Translucent sheet 17528 Shi Xipin.ptd 27 page

Claims (1)

1241688 VI. Scope of patent application 1. A light-sensitive semiconductor structure includes: a film carrier having a first surface, an opposite second surface, and an opening penetrating the film carrier, and the first surface is A plurality of conductive members extending into the opening are laid; the light-sensitive chip has an active surface and a non-active surface, and a plurality of conductive bumps (Stud Bump) are formed on the active surface so as to use the conductive The bumps are respectively connected to the conductive member, and the light-sensitive chip is accommodated in the opening of the film carrier. The light transmitting unit is connected to the first surface of the film carrier to cover the film carrier. An opening; a packaging gel covering the second surface of the film carrier to cover the opening; and a lens carrier having a lens (lens) connected to the first of the film carrier On the surface, the light-transmitting unit is positioned between the lens and the active surface of the photosensitive wafer. 2. The light-sensitive semiconductor structure according to item 1 of the patent application scope, wherein the conductive member is an inner lead. 3. The light-sensitive semiconductor structure according to item 1 of the patent application scope, wherein the conductive member is made of a copper material. 4. The light-sensitive semiconductor structure according to item 1 of the patent application scope, wherein the conductive bump is formed by a wire bonding (W i r e B ο n d i n g) technology. 5. The light-sensitive semiconductor structure according to item 1 of the patent application scope, wherein the conductive bump is selected from one of gold, aluminum, or copper materials. 6. For example, the light-sensitive semiconductor structure of the scope of patent application, wherein, the 17528 石 夕 品 .ptd Page 28 1241688 6. Scope of patent application Conductive bumps are the inner guide pin fresh junction technology (ILB) of wrong film automatic joining (T A B) and are placed on the conductive parts. 7. The light-sensitive semiconductor structure according to item 1 of the patent application scope, wherein the conductive bump is connected to the conductive member by a thermo-compression bonding technique. 8. The light-sensitive semiconductor structure according to item 1 of the patent application scope, wherein the light-transmitting unit is a glass. 9. The light-sensitive semiconductor structure according to item 1 of the scope of patent application, wherein the light transmitting unit is an infrared filter (IR F i 11 e r). 10. The light-sensitive semiconductor structure according to item 1 of the patent application scope, wherein the light-transmitting unit is a light-transmitting material layer coated on the film carrier. 1 1. The light-sensitive semiconductor structure according to item 1 of the patent application scope, wherein the encapsulant system is partially covered on the non-active surface of the light-sensitive wafer. 1 2. The light-sensitive semiconductor structure according to item 1 of the patent application scope, wherein the encapsulant system is completely covered on the non-active surface of the light-sensitive wafer 1 3. The light-sensitive semiconductor structure according to item 1 of the patent application scope The semiconductor structure, wherein the photosensitive wafer has a photosensitive area on the active surface. 14. The light-sensing semiconductor structure according to item 1 of the scope of the patent application, wherein the light-sensing chip is an image sensor (I m ag e Sen s 0 r). 15. The light-sensitive semiconductor structure according to item 1 of the scope of patent application, wherein the light-sensitive wafer is a light-emitting diode (LED). 16. The light-sensitive semiconductor structure according to item 1 of the scope of patent application, wherein the 17528 Shi Xipin.ptd Page 29 1241688 6. Scope of Patent Application The lens is a focal length adjustable lens. 1 7. The light-sensing semiconductor structure according to item 1 of the scope of the patent application, wherein the lens is screwed into the lens carrier, and the focal length of the lens can be adjusted by its screwed way. 1 8. The light-sensitive semiconductor structure according to item 1 of the patent application scope, wherein the lens carrier further comprises a light-transmitting unit interposed between the lens and the light-sensitive wafer. 19. The light-sensitive semiconductor structure according to item 1 of the patent application scope, wherein the semiconductor structure further comprises a chip cover (Chip) placed on the second surface of the film carrier to cover the light-sensitive wafer. Cover). 2 0. A method for manufacturing a light-sensitive semiconductor structure, the steps of which include: preparing a film carrier having a first surface, an opposite second surface, and an opening penetrating the film carrier, and The first surface is provided with a plurality of conductive members extending into the opening; a light-sensitive wafer is prepared, and the light-sensitive wafer has an active surface and a non-active surface; on the active surface of the light-sensitive wafer A plurality of conductive bumps (Stud Bump) are formed on the substrate; the light-sensitive wafer is bonded to the conductive member of the film carrier by mistake, so that the light-sensitive chip is accommodated in the film carrier. In the opening; covering a part of the second surface of the film carrier with an encapsulating gel, and placing a light transmitting unit on the first surface of the film carrier to cover the opening; and ] 7528 碎 品 .ptd Page 30 1241688 VI. Application for a patent Place a lens carrier on the first surface of the film carrier, so that the light transmitting unit is located in the lens of the lens carrier (L ens ) And the active surface of the photosensitive wafer. 2 1. The method for manufacturing a light-sensing semiconductor structure according to item 20 of the scope of patent application, wherein the conductive member is an inner lead. 2 2. The method for manufacturing a light-sensitive semiconductor structure according to item 20 of the patent application scope, wherein the conductive member is made of a copper material. 2 3. The method for manufacturing a light-sensing semiconductor structure according to item 20 of the scope of patent application, wherein the conductive bump is formed by a wire bonding technique (W i r e Β ο n d i n g). 24. The method for manufacturing a light-sensitive semiconductor structure according to item 20 of the patent application scope, wherein the conductive bump is selected from one of gold, aluminum, or copper materials. 25. According to the light-sensitive semiconductor structure manufacturing method of claim 20 in the scope of the patent application, wherein the conductive bump is connected to the conductive member by the inner-lead soldering technology (ILB) of TAB. on. 26. The method of manufacturing a light-sensing semiconductor structure according to item 20 of the patent application scope, wherein the conductive bump is connected to the conductive member by a thermo-compression bonding (Thermo-compression β n d i n g) technology. 2 7. The method for manufacturing a light-sensitive semiconductor structure according to item 20 of the patent application scope, wherein the light transmitting unit is a glass. 28. The method for manufacturing a light-sensing semiconductor structure according to item 20 of the patent application scope, wherein the light transmitting unit is an infrared filter (IR F i 1 t e r). 2 9. If the light-sensing semiconductor structure manufacturing method of item 20 of the scope of patent application, 17528 碎 品 .ptd Page 31 1241688 6. In the scope of patent application, the light transmission unit is a light transmission material layer coated on the film carrier. 30. The method for manufacturing a light-sensitive semiconductor structure according to item 20 of the patent application scope, wherein the encapsulant system is partially coated on the non-active surface of the light-sensitive wafer. 3 1. The method of manufacturing a light-sensitive semiconductor structure according to item 20 of the patent application scope, wherein the encapsulant system is completely coated on the non-active surface of the light-sensitive wafer. 32. The method for manufacturing a light-sensitive semiconductor structure according to item 20 of the scope of the patent application, wherein the active surface of the light-sensitive wafer has a photosensitive area. 3 3. The method of manufacturing a light-sensitive semiconductor structure according to the scope of patent application No. 20, wherein 'the light-sensitive chip is an image sensor (I mage Sensor) 〇 3 4. The light-sensitive semiconductor structure manufacturing method, wherein the light-sensitive wafer is a light-emitting diode (LED). 35. The method of manufacturing a light-sensing semiconductor structure according to item 20 of the scope of patent application, wherein the lens is a focus-adjustable lens. 36. According to the light-sensing semiconductor structure manufacturing method of the scope of applying for patent No. 20, wherein the lens is screwed into the lens carrier, and the lens can be adjusted by its screwed way focal length. 37. The method for manufacturing a light-sensitive semiconductor structure according to item 20 of the patent application scope, wherein the lens carrier includes a light-transmitting early element between the lens and the light-sensitive wafer. 38. If the light-sensitive semiconductor structure manufacturing method of item 20 of the scope of patent application, 17528 Silicone.ptd Page 32 1241688 17528 Silicone.ptd Page 33