TWI635138B - 可硬化性聚矽氧組合物、其硬化產品、及光半導體裝置 - Google Patents

可硬化性聚矽氧組合物、其硬化產品、及光半導體裝置 Download PDF

Info

Publication number
TWI635138B
TWI635138B TW102139156A TW102139156A TWI635138B TW I635138 B TWI635138 B TW I635138B TW 102139156 A TW102139156 A TW 102139156A TW 102139156 A TW102139156 A TW 102139156A TW I635138 B TWI635138 B TW I635138B
Authority
TW
Taiwan
Prior art keywords
carbons
group
sio
mass
component
Prior art date
Application number
TW102139156A
Other languages
English (en)
Chinese (zh)
Other versions
TW201420686A (zh
Inventor
飯村智浩
Tomohiro Iimura
須藤通孝
Michitaka Suto
西島一裕
Kazuhiro Nishijima
竹內香須美
Kasumi Takeuchi
古川晴彥
Haruhiko Furukawa
森田好次
Yoshitsugu Morita
Original Assignee
道康寧東麗股份有限公司
Dow Corning Toray Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 道康寧東麗股份有限公司, Dow Corning Toray Co., Ltd. filed Critical 道康寧東麗股份有限公司
Publication of TW201420686A publication Critical patent/TW201420686A/zh
Application granted granted Critical
Publication of TWI635138B publication Critical patent/TWI635138B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Silicon Polymers (AREA)
  • Sealing Material Composition (AREA)
TW102139156A 2012-10-30 2013-10-29 可硬化性聚矽氧組合物、其硬化產品、及光半導體裝置 TWI635138B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012239671A JP6081774B2 (ja) 2012-10-30 2012-10-30 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP2012-239671 2012-10-30

Publications (2)

Publication Number Publication Date
TW201420686A TW201420686A (zh) 2014-06-01
TWI635138B true TWI635138B (zh) 2018-09-11

Family

ID=49585557

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102139156A TWI635138B (zh) 2012-10-30 2013-10-29 可硬化性聚矽氧組合物、其硬化產品、及光半導體裝置

Country Status (7)

Country Link
US (1) US9312196B2 (enExample)
EP (1) EP2914664B1 (enExample)
JP (1) JP6081774B2 (enExample)
KR (1) KR101704425B1 (enExample)
CN (1) CN104812841B (enExample)
TW (1) TWI635138B (enExample)
WO (1) WO2014069610A1 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6084808B2 (ja) 2012-10-24 2017-02-22 東レ・ダウコーニング株式会社 オルガノポリシロキサン、硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6157085B2 (ja) 2012-10-24 2017-07-05 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
TWI624510B (zh) * 2014-02-04 2018-05-21 日商道康寧東麗股份有限公司 硬化性聚矽氧組合物、其硬化物及光半導體裝置
TWI653295B (zh) * 2014-02-04 2019-03-11 日商道康寧東麗股份有限公司 硬化性聚矽氧組合物、其硬化物及光半導體裝置
JP6568201B2 (ja) * 2014-08-06 2019-08-28 ダウ シリコーンズ コーポレーション オルガノシロキサン組成物及びその使用
TWI663236B (zh) * 2014-10-16 2019-06-21 Dow Silicones Corporation 聚矽氧組合物及具有由該組合物製得之壓敏性黏著層的壓敏性黏著膜
CN106675505A (zh) * 2015-11-09 2017-05-17 北京科化新材料科技有限公司 用于led封装的硅胶
WO2017208748A1 (ja) * 2016-05-30 2017-12-07 日産化学工業株式会社 重合性シラン化合物
WO2017208936A1 (ja) * 2016-05-30 2017-12-07 日産化学工業株式会社 反応性ポリシロキサン及びそれを含む重合性組成物
JP6930816B2 (ja) * 2016-08-08 2021-09-01 ダウ・東レ株式会社 硬化性粒状シリコーン組成物、それからなる半導体用部材、およびその成型方法
US10927278B2 (en) * 2017-02-27 2021-02-23 Dupont Toray Specialty Materials Kabushiki Kaisha Curable organopolysiloxane composition and semiconductor device
JP6710175B2 (ja) * 2017-04-03 2020-06-17 信越化学工業株式会社 白色熱硬化性エポキシ・シリコーンハイブリッド樹脂組成物及び光半導体装置
WO2018235491A1 (ja) 2017-06-19 2018-12-27 東レ・ダウコーニング株式会社 硬化性粒状シリコーン組成物、それからなる半導体用部材、およびその成型方法
JP6863878B2 (ja) * 2017-11-02 2021-04-21 信越化学工業株式会社 付加硬化型シリコーン組成物、硬化物、及び光学素子
JP6823578B2 (ja) * 2017-11-02 2021-02-03 信越化学工業株式会社 付加硬化型シリコーン組成物、硬化物、光学素子
JP7021046B2 (ja) * 2018-10-22 2022-02-16 信越化学工業株式会社 付加硬化型シリコーン組成物、シリコーン硬化物、及び、光学素子
EP3663346B1 (de) * 2018-12-04 2023-11-15 Evonik Operations GmbH Reaktivsiloxane
KR102657646B1 (ko) * 2019-05-21 2024-04-17 다우 실리콘즈 코포레이션 폴리오르가노실록산 이형 코팅 및 이의 제조 및 용도
US12139634B2 (en) 2020-04-14 2024-11-12 Shin-Etsu Chemical Co., Ltd. Silylated isocyanurate compound, metal corrosion inhibitor, curable organosilicon resin composition, and semiconductor apparatus
CN114058326B (zh) * 2021-11-22 2023-05-23 烟台德邦科技股份有限公司 一种粘接及可靠性优异的有机聚硅氧烷组合物及其制备方法
CN114181535B (zh) * 2021-12-08 2023-04-25 东莞市贝特利新材料有限公司 一种可固化的有机聚硅氧烷组合物及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080207848A1 (en) * 2004-10-04 2008-08-28 Dow Corning Toray Co., Ltd. Organopolysiloxane and Curable Silicone Composition that Contains Aforementioned Organopolysiloxane
US20090118441A1 (en) * 2005-11-09 2009-05-07 Shinichi Yamamoto Curable Silicone Composition

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004361692A (ja) * 2003-04-07 2004-12-24 Dow Corning Asia Ltd 光伝送部材用硬化性オルガノポリシロキサン樹脂組成物、オルガノポリシロキサン樹脂硬化物からなる光伝送部材および光伝送部材の製造方法
JP2005162859A (ja) * 2003-12-02 2005-06-23 Dow Corning Toray Silicone Co Ltd 付加反応硬化型オルガノポリシロキサン樹脂組成物および光学部材
JP4801320B2 (ja) * 2003-12-19 2011-10-26 東レ・ダウコーニング株式会社 付加反応硬化型オルガノポリシロキサン樹脂組成物
DE602006003095D1 (de) * 2005-05-26 2008-11-20 Bahadur Maneesh Zur formung kleiner formen
JP5392805B2 (ja) * 2005-06-28 2014-01-22 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン樹脂組成物および光学部材
CN101389695B (zh) * 2006-02-24 2012-07-04 陶氏康宁公司 用硅氧烷包封的发光器件和用于制备该硅氧烷的可固化的硅氧烷组合物
WO2008079275A1 (en) * 2006-12-20 2008-07-03 Dow Corning Corporation Composite article including a cation-sensitive layer
JP5520528B2 (ja) * 2008-07-10 2014-06-11 東レ・ダウコーニング株式会社 ガスバリアー性硬化オルガノポリシロキサン樹脂フィルム及びその製造方法
EP2352794A1 (en) * 2008-10-31 2011-08-10 Dow Corning Toray Co., Ltd. Curable organopolysiloxane composition, optical semiconductor element sealant, and optical semiconductor device
JP5455065B2 (ja) * 2010-06-22 2014-03-26 信越化学工業株式会社 シクロアルキル基含有シリコーン樹脂組成物及び該組成物の使用方法。
JP5534977B2 (ja) * 2010-06-29 2014-07-02 東レ・ダウコーニング株式会社 硬化性オルガノポリシロキサン組成物および光半導体装置
JP5170471B2 (ja) * 2010-09-02 2013-03-27 信越化学工業株式会社 低ガス透過性シリコーン樹脂組成物及び光半導体装置
JP2012149131A (ja) * 2011-01-17 2012-08-09 Shin-Etsu Chemical Co Ltd シリコーン樹脂組成物及び当該組成物を使用した光半導体装置
CN104066770B (zh) * 2011-11-25 2016-10-19 Lg化学株式会社 有机聚硅氧烷
JP6157085B2 (ja) 2012-10-24 2017-07-05 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6084808B2 (ja) 2012-10-24 2017-02-22 東レ・ダウコーニング株式会社 オルガノポリシロキサン、硬化性シリコーン組成物、その硬化物、および光半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080207848A1 (en) * 2004-10-04 2008-08-28 Dow Corning Toray Co., Ltd. Organopolysiloxane and Curable Silicone Composition that Contains Aforementioned Organopolysiloxane
US20090118441A1 (en) * 2005-11-09 2009-05-07 Shinichi Yamamoto Curable Silicone Composition

Also Published As

Publication number Publication date
TW201420686A (zh) 2014-06-01
US20150252221A1 (en) 2015-09-10
CN104812841A (zh) 2015-07-29
EP2914664A1 (en) 2015-09-09
WO2014069610A1 (en) 2014-05-08
US9312196B2 (en) 2016-04-12
KR20150081292A (ko) 2015-07-13
JP2014088513A (ja) 2014-05-15
EP2914664B1 (en) 2016-09-07
JP6081774B2 (ja) 2017-02-15
CN104812841B (zh) 2017-08-29
KR101704425B1 (ko) 2017-02-08

Similar Documents

Publication Publication Date Title
TWI635138B (zh) 可硬化性聚矽氧組合物、其硬化產品、及光半導體裝置
US20140191161A1 (en) Curable Silicon Composition, Cured Product Thereof, And Optical Semiconductor Device
JP6084808B2 (ja) オルガノポリシロキサン、硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6212122B2 (ja) 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6059010B2 (ja) 硬化性シリコーン組成物、その硬化物、および光半導体装置
TWI621665B (zh) 可硬化性聚矽氧組合物、其硬化產品、及光半導體裝置
JP6022236B2 (ja) コーティング剤、電気・電子機器、および電気・電子機器の金属部の保護方法
TWI761386B (zh) 硬化性聚矽氧組成物及使用其之光半導體裝置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees