JP6081774B2 - 硬化性シリコーン組成物、その硬化物、および光半導体装置 - Google Patents

硬化性シリコーン組成物、その硬化物、および光半導体装置 Download PDF

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JP6081774B2
JP6081774B2 JP2012239671A JP2012239671A JP6081774B2 JP 6081774 B2 JP6081774 B2 JP 6081774B2 JP 2012239671 A JP2012239671 A JP 2012239671A JP 2012239671 A JP2012239671 A JP 2012239671A JP 6081774 B2 JP6081774 B2 JP 6081774B2
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component
carbon atoms
formula
sio
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JP2014088513A (ja
JP2014088513A5 (enExample
Inventor
智浩 飯村
智浩 飯村
通孝 須藤
通孝 須藤
一裕 西嶋
一裕 西嶋
香須美 竹内
香須美 竹内
晴彦 古川
晴彦 古川
森田　好次
好次 森田
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DuPont Toray Specialty Materials KK
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Dow Corning Toray Co Ltd
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Priority to JP2012239671A priority Critical patent/JP6081774B2/ja
Application filed by Dow Corning Toray Co Ltd filed Critical Dow Corning Toray Co Ltd
Priority to EP13792111.0A priority patent/EP2914664B1/en
Priority to CN201380060840.0A priority patent/CN104812841B/zh
Priority to US14/438,695 priority patent/US9312196B2/en
Priority to KR1020157013088A priority patent/KR101704425B1/ko
Priority to PCT/JP2013/079653 priority patent/WO2014069610A1/en
Priority to TW102139156A priority patent/TWI635138B/zh
Publication of JP2014088513A publication Critical patent/JP2014088513A/ja
Publication of JP2014088513A5 publication Critical patent/JP2014088513A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/296—Organo-silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Silicon Polymers (AREA)
  • Sealing Material Composition (AREA)
JP2012239671A 2012-10-30 2012-10-30 硬化性シリコーン組成物、その硬化物、および光半導体装置 Active JP6081774B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012239671A JP6081774B2 (ja) 2012-10-30 2012-10-30 硬化性シリコーン組成物、その硬化物、および光半導体装置
CN201380060840.0A CN104812841B (zh) 2012-10-30 2013-10-25 可固化有机硅组合物、其固化产物及光学半导体器件
US14/438,695 US9312196B2 (en) 2012-10-30 2013-10-25 Curable silicone composition, cured product thereof, and optical semiconductor
KR1020157013088A KR101704425B1 (ko) 2012-10-30 2013-10-25 경화성 실리콘 조성물, 이의 경화물, 및 광반도체 장치
EP13792111.0A EP2914664B1 (en) 2012-10-30 2013-10-25 Curable silicone composition, cured product thereof, and optical semiconductor device
PCT/JP2013/079653 WO2014069610A1 (en) 2012-10-30 2013-10-25 Curable silicone composition, cured product thereof, and optical semiconductor device
TW102139156A TWI635138B (zh) 2012-10-30 2013-10-29 可硬化性聚矽氧組合物、其硬化產品、及光半導體裝置

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JP2012239671A JP6081774B2 (ja) 2012-10-30 2012-10-30 硬化性シリコーン組成物、その硬化物、および光半導体装置

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JP2014088513A JP2014088513A (ja) 2014-05-15
JP2014088513A5 JP2014088513A5 (enExample) 2015-11-26
JP6081774B2 true JP6081774B2 (ja) 2017-02-15

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US (1) US9312196B2 (enExample)
EP (1) EP2914664B1 (enExample)
JP (1) JP6081774B2 (enExample)
KR (1) KR101704425B1 (enExample)
CN (1) CN104812841B (enExample)
TW (1) TWI635138B (enExample)
WO (1) WO2014069610A1 (enExample)

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JP6084808B2 (ja) 2012-10-24 2017-02-22 東レ・ダウコーニング株式会社 オルガノポリシロキサン、硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6157085B2 (ja) 2012-10-24 2017-07-05 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
TWI624510B (zh) * 2014-02-04 2018-05-21 日商道康寧東麗股份有限公司 硬化性聚矽氧組合物、其硬化物及光半導體裝置
TWI653295B (zh) * 2014-02-04 2019-03-11 日商道康寧東麗股份有限公司 硬化性聚矽氧組合物、其硬化物及光半導體裝置
JP6568201B2 (ja) * 2014-08-06 2019-08-28 ダウ シリコーンズ コーポレーション オルガノシロキサン組成物及びその使用
TWI663236B (zh) * 2014-10-16 2019-06-21 Dow Silicones Corporation 聚矽氧組合物及具有由該組合物製得之壓敏性黏著層的壓敏性黏著膜
CN106675505A (zh) * 2015-11-09 2017-05-17 北京科化新材料科技有限公司 用于led封装的硅胶
WO2017208748A1 (ja) * 2016-05-30 2017-12-07 日産化学工業株式会社 重合性シラン化合物
WO2017208936A1 (ja) * 2016-05-30 2017-12-07 日産化学工業株式会社 反応性ポリシロキサン及びそれを含む重合性組成物
JP6930816B2 (ja) * 2016-08-08 2021-09-01 ダウ・東レ株式会社 硬化性粒状シリコーン組成物、それからなる半導体用部材、およびその成型方法
US10927278B2 (en) * 2017-02-27 2021-02-23 Dupont Toray Specialty Materials Kabushiki Kaisha Curable organopolysiloxane composition and semiconductor device
JP6710175B2 (ja) * 2017-04-03 2020-06-17 信越化学工業株式会社 白色熱硬化性エポキシ・シリコーンハイブリッド樹脂組成物及び光半導体装置
WO2018235491A1 (ja) 2017-06-19 2018-12-27 東レ・ダウコーニング株式会社 硬化性粒状シリコーン組成物、それからなる半導体用部材、およびその成型方法
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JP6823578B2 (ja) * 2017-11-02 2021-02-03 信越化学工業株式会社 付加硬化型シリコーン組成物、硬化物、光学素子
JP7021046B2 (ja) * 2018-10-22 2022-02-16 信越化学工業株式会社 付加硬化型シリコーン組成物、シリコーン硬化物、及び、光学素子
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KR102657646B1 (ko) * 2019-05-21 2024-04-17 다우 실리콘즈 코포레이션 폴리오르가노실록산 이형 코팅 및 이의 제조 및 용도
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CN114058326B (zh) * 2021-11-22 2023-05-23 烟台德邦科技股份有限公司 一种粘接及可靠性优异的有机聚硅氧烷组合物及其制备方法
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JP6157085B2 (ja) 2012-10-24 2017-07-05 東レ・ダウコーニング株式会社 硬化性シリコーン組成物、その硬化物、および光半導体装置
JP6084808B2 (ja) 2012-10-24 2017-02-22 東レ・ダウコーニング株式会社 オルガノポリシロキサン、硬化性シリコーン組成物、その硬化物、および光半導体装置

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TW201420686A (zh) 2014-06-01
US20150252221A1 (en) 2015-09-10
CN104812841A (zh) 2015-07-29
EP2914664A1 (en) 2015-09-09
WO2014069610A1 (en) 2014-05-08
US9312196B2 (en) 2016-04-12
KR20150081292A (ko) 2015-07-13
JP2014088513A (ja) 2014-05-15
EP2914664B1 (en) 2016-09-07
CN104812841B (zh) 2017-08-29
KR101704425B1 (ko) 2017-02-08
TWI635138B (zh) 2018-09-11

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