TWI634091B - Ceramic wiring board, ceramic green sheet for ceramic wiring board, and glass ceramic powder for ceramic wiring board - Google Patents
Ceramic wiring board, ceramic green sheet for ceramic wiring board, and glass ceramic powder for ceramic wiring board Download PDFInfo
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Abstract
陶瓷配線基板(1)具備陶瓷基板(10)與內部導體(20)。內部導體(20)被配設於陶瓷基板(10)內。陶瓷基板(10)包含玻璃、第1陶瓷填充物及第2陶瓷填充物。第1陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數比第2陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數更低。第2陶瓷填充物的3點彎曲強度比第1陶瓷填充物的3點彎曲強度更高。
Description
本發明係關於陶瓷配線基板、陶瓷配線基板用陶瓷生胚片、及陶瓷配線基板用玻璃陶瓷粉末。
從前,在檢查半導體晶圓時,於半導體晶圓上配設探針卡,透過探針卡把半導體晶圓導電連接至測試器。
探針卡,通常具有:接觸於半導體晶圓的測試頭、被連接於測試機的印刷陶瓷配線基板,連接印刷陶瓷配線基板與測試頭的被稱為插入基板的陶瓷配線基板。
例如,於專利文獻1,作為可低溫燒成(firing)的陶瓷配線基板,記載著由包含玻璃的低溫燒成陶瓷所構成的陶瓷配線基板。
[專利文獻1]日本特開2009-074823號公報
印刷陶瓷配線基板之電極墊間距離,比測試頭之電極墊間距離更大。於插入基板之一方側的主面設有對應於印刷陶瓷配線基板的電極墊之電極墊,於另一方側的主面上設有對應於測試頭的電極墊之電極墊。這些一方主面側的電極墊與另一方主面側的電極墊,藉由內部導體連接。亦即,於插入基板,兩主面之電極墊的位置精度很高是重要的。
此外,使用探針卡的檢查,例如在-40℃到+125℃之較寬的溫度範圍下進行。因此,檢查溫度改變時,以插入基板之電極墊間距離與測試頭或印刷陶瓷配線基板等之電極墊間距離之間不生差異的方式,使插入基板的熱膨脹係數近似於測試頭或印刷陶瓷配線基板的熱膨脹係數為較佳。亦即,插入基板,以配合使用環境調節熱膨脹係數的材料來構成為較佳。
此外,通常測試頭的熱膨脹係數與半導體晶圓的熱膨脹係數近似。因此,也要求使插入基板的熱膨脹係數縮小到半導體晶圓的熱膨脹係數程度。
然而,在專利文獻1所記載的陶瓷配線基板,要實現半導體晶圓的熱膨脹係數那樣低的熱膨脹係數是困難的。
進而,也有確保插入基板的機械強度的要
求。
本發明的主要目的在於提供可低溫燒成的陶瓷配線基板,且係可把熱膨脹係數調節到很低,而且機械強度高的陶瓷配線基板。
相關於本發明的陶瓷配線基板,具備陶瓷基板與內部導體。內部導體被配設於陶瓷基板內。陶瓷基板包含玻璃、第1陶瓷填充物及第2陶瓷填充物。第1陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數比第2陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數更低。第2陶瓷填充物的3點彎曲強度比第1陶瓷填充物的3點彎曲強度更高。
在相關於本發明之陶瓷配線基板,最好是第1陶瓷填充物的-40℃~+125℃之溫度範圍的熱膨脹係數為-8~+5ppm/℃,第2陶瓷填充物的3點彎曲強度為400~800MPa。
在相關於本發明之陶瓷配線基板,最好是陶瓷基板包含3種以上的陶瓷填充物,第1陶瓷填充物,在-40℃~+125℃之溫度範圍的熱膨脹係數為3種以上的陶瓷填充物中最低的,第2陶瓷填充物,各陶瓷填充物的3點彎曲強度是3種以上陶瓷填充物之中最高的。
在相關於本發明之陶瓷配線基板,最好是陶瓷基板係由玻璃、第1陶瓷填充物及第2陶瓷填充物所構
成。
在相關於本發明之陶瓷配線基板,最好是第1陶瓷填充物為矽酸鋅(willemite)填充物,第2陶瓷填充物為氧化鋁填充物。
在相關於本發明之陶瓷配線基板,最好是玻璃與氧化鋁填充物及矽酸鋅填充物之質量比(玻璃:氧化鋁填充物及矽酸鋅填充物)在30:70~65:35之範圍內,氧化鋁填充物與矽酸鋅填充物之質量比(氧化鋁填充物:矽酸鋅填充物)在20:80~60:40之範圍內。
矽酸鋅填充物的平均粒徑最好是比氧化鋁填充物的平均粒徑更小。
玻璃以硼矽酸玻璃為佳。
玻璃,作為玻璃組成,以質量百分比表示組成,最好是包含SiO2 60~80%、B2O3 10~30%、Li2O+Na2O+K2O 1~5%及MgO+CaO+SrO+BaO 0~20%。
陶瓷基板在溫度範圍-40℃~+125℃之熱膨脹係數最好是4ppm/℃以下。
相關於本發明之陶瓷配線基板用陶瓷生胚片,包含玻璃、第1陶瓷填充物及第2陶瓷填充物,第1陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數比第2陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數更低,第2陶瓷填充物的3點彎曲強度比第1陶瓷填充物的3點彎曲強度更高。
相關於本發明之陶瓷配線基板用玻璃陶瓷粉
末,包含玻璃、第1陶瓷填充物及第2陶瓷填充物,第1陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數比第2陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數更低,第2陶瓷填充物的3點彎曲強度比第1陶瓷填充物的3點彎曲強度更高。
根據本發明的話,可以提供可低溫燒成的陶瓷配線基板,且係可把熱膨脹係數調節到很低,而且機械強度高的陶瓷配線基板。
1‧‧‧陶瓷配線基板
10‧‧‧陶瓷基板
10a‧‧‧第1主面
10b‧‧‧第2主面
11‧‧‧陶瓷層
20‧‧‧內部導體
21‧‧‧層間電極
22‧‧‧貫孔(via ole)電極
31,32‧‧‧電極墊
圖1係相關於本發明之一實施形態之陶瓷配線基板之模式剖面圖。
圖2係表示陶瓷基板之玻璃與填充物之質量比(玻璃的質量百分率)與陶瓷配線基板的相對密度及機械強度之關係圖。
以下,說明實施本發明之較佳的形態之一例。但是以下的實施形態僅為例示。本發明並不受到以下的實施形態之任何限制。
圖1係相關於本實施形態之陶瓷配線基板之
模式剖面圖。圖1所示的陶瓷配線基板1,一般使用被要求熱膨脹係數小,而且機械強度高的陶瓷配線基板。陶瓷配線基板1,例如可以作為探針卡的插入基板使用。
陶瓷配線基板1具有陶瓷基板10。陶瓷基板10,具有第1及第2主面10a、10b。陶瓷基板10,藉由複數陶瓷層11之層積體構成。
於陶瓷基板10的內部,被配設複數內部導體20。分別的內部導體20,貫通位於相鄰的陶瓷層11之間的層間電極21,與陶瓷層11,具有中介著陶瓷層11連接對向於陶瓷層11的層積方向的層間電極21彼此之貫孔(via hole)電極22。
複數內部導體20,跨陶瓷基板10的第1主面10a與第2主面10b地設置。內部導體20的第1主面10a側的端部,被連接於設在第1主面10a上的電極墊31。內部導體20的第2主面10b側的端部,被連接於設在第2主面10b上的電極墊32。
相鄰的電極墊32間的距離,比相鄰的電極墊31間的距離更長。因此,陶瓷配線基板1作為插入基板使用的場合,測試頭被連接於第2主面10b側,印刷陶瓷配線基板被連接於第1主面10a側。
又,內部導體20及電極墊31,32,可以藉由適當的導電材料構成。內部導體20及電極墊31,32,分別可以藉由例如Pt,Au,Ag,Cu,Ni,Pd等金屬之至少一種來構成。
陶瓷基板10,藉由包含玻璃的低溫燒成陶瓷構成。具體而言,陶瓷基板10包含玻璃、第1陶瓷填充物及第2陶瓷填充物。接著,第1陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數比第2陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數更低。第2陶瓷填充物的3點彎曲強度比第1陶瓷填充物的3點彎曲強度更高。
玻璃,提高陶瓷基板10的緻密性(相對密度),提高陶瓷基板10的機械強度。
陶瓷填充物,可以調整在玻璃單體所無法調整的-40℃~+125℃之溫度範圍之熱膨脹係數及機械強度。
作為陶瓷填充物,包含-40℃~+125℃之溫度範圍之熱膨脹係數低的第1陶瓷填充物,以及陶瓷填充物的3點彎曲強度高的第2陶瓷填充物,所以藉由調整玻璃與這些陶瓷填充物之質量比,可以適切地調節陶瓷基板10的熱膨脹係數,同時可以擔保作為陶瓷基板10的機械強度。總之,藉由第1陶瓷填充物,可以縮小陶瓷基板10之-40℃~+125℃之溫度範圍之熱膨脹係數,同時藉由第2陶瓷填充物,可以提高陶瓷基板10的機械強度。
又,本說明書之陶瓷填充物之-40℃~+125℃的溫度範圍之熱膨脹係數,係測定藉由以下方法製作的厚度3.0mm的薄板狀燒結體之熱膨脹係數。
又,本說明書之陶瓷填充物的3點彎曲強度,係使用以下的方法所製作的厚度3.0mm的薄板狀燒
結體,藉由依據JIS R1601(2008)的方法進行測定。
首先,對平均粒徑2μm的陶瓷填充物100質量份,混合聚乙烯丁縮醛(PVB)15質量份,鄰苯二甲酸苄基丁酯3質量份,甲苯50質量份,混練而製作泥漿。接著,將該泥漿藉由刮刀法成形為直徑20.32cm(8吋),厚度150μm的圓形的薄板狀製作生胚片。接著,層積8枚生胚片,在90℃、30MPa下使熱壓接後,在450℃熱處理脫脂之後,在1600℃燒結製作燒結體。最後,研磨燒結體直到成為厚度3.0mm為止得到薄板狀的燒結體。
陶瓷基板10,亦可包含3種以上的陶瓷填充物。亦即,亦可包含第1陶瓷填充物及第2陶瓷填充物以外的陶瓷填充物。
在此場合,第1陶瓷填充物,在-40℃~125℃之溫度範圍的熱膨脹係數為3種以上的陶瓷填充物中最低的,第2陶瓷填充物,其3點彎曲強度是3種以上陶瓷填充物之中最高的。
陶瓷基板10,以包含2種類以上的陶瓷填充物為佳。亦即,藉由調整玻璃、第1陶瓷填充物及第2陶瓷填充物的質量比,可以容易地縮小陶瓷基板10的熱膨脹係數,同時提高陶瓷基板10的機械強度。
第1陶瓷填充物之溫度範圍-40℃~+125℃之熱膨脹係數以-8~+5ppm/℃為較佳。藉此,可以得到具有接近於半導體晶圓的熱膨脹係數之陶瓷基板10。第1陶瓷填充物之溫度範圍-40℃~+125℃之熱膨脹係數以-5~
+4ppm/℃為較佳,以-3~+3ppm/℃進而更佳。
作為第1陶瓷填充物,可以舉出矽酸鋅(willemite)填充物、堇青石(cordierite)填充物、β-鋰輝石(spodumene)填充物、莫來石(mullite)填充物、氧化鋯系陶瓷填充物(ZrSiO4、ZrW2O8、(ZrO2)P2O7、KZr2(PO4)3、Zr2(WO4)(PO4)2)等。其中以矽酸鋅填充物為佳。藉由使用矽酸鋅填充物,可以使-40℃~+125℃之溫度範圍的陶瓷基板10之熱膨脹係數,例如縮小到4ppm/℃以下,進而可縮小至3.6ppm/℃以下。又,矽酸鋅,為矽/鋅複合氧化物。矽酸鋅一般以ZnSiO4表示。
第2陶瓷填充物之3點彎曲強度以400~800MPa為較佳。藉此,可以得到機械強度高的陶瓷基板10。第2陶瓷填充物之3點彎曲強度以450~800MPa為較佳,以500~800MPa進而更佳。
作為第2陶瓷填充物,可以舉出氧化鋁填充物、氧化鋯填充物等。其中以氧化鋁填充物為佳。藉由使用氧化鋁填充物,可使陶瓷基板10的機械強度充分增大。
陶瓷基板10,例如在包含氧化鋁填充物及矽酸鋅填充物的場合,藉由調節氧化鋁填充物與矽酸鋅填充物之質量比可以適切地調節陶瓷基板10的熱膨脹係數,同時可擔保作為陶瓷基板10之機械強度。總之,藉由矽酸鋅填充物,可以縮小熱膨脹係數,同時藉由氧化鋁填充物,可以提高陶瓷基板10的機械強度。此
外,可以使-40℃~+125℃之溫度範圍的陶瓷基板10之熱膨脹係數,例如縮小到4ppm/℃以下,進而可縮小至3.6ppm/℃以下。
圖2係表示陶瓷基板10之玻璃與填充物之質量比與陶瓷配線基板的相對密度(以實線表示)及機械強度(3點彎曲強度)(以虛線表示)之關係圖。又,相對密度D,以實測密度/理論密度×100(%),(理論密度係由玻璃及陶瓷的理論密度對應於橫軸的混合比計算之值)來表示。如圖2所示,相對密度,直到成為玻璃含量達到某個值為止,是伴隨著玻璃含量的增加而增加,此外,伴隨著相對密度的增加,3點彎曲強度也增加。玻璃含量成為某個值以上時,相對密度成為約100%,相對密度在玻璃含量更為增加時也不增加,伴隨著相對密度的增加而增加之3點彎曲強度也未見增加。另一方面,伴隨著玻璃含量的增加,填充物的含量會減少,伴此,3點彎曲強度也逐漸減少。由這些結果,可知從提高陶瓷基板10的機械強度的觀點來看,玻璃與氧化鋁填充物及矽酸鋅填充物之質量比(玻璃:氧化鋁填充物及矽酸鋅填充物)以在30:70~65:35之範圍內為佳,40:60~60:40之範圍內為更佳。
於陶瓷基板10,矽酸鋅填充物對氧化鋁填充物及矽酸鋅填充物的總量之質量比(矽酸鋅填充物/氧化鋁填充物及矽酸鋅填充物之總量)太小的話,會有陶瓷基板10的機械強度提高,但是隨著陶瓷基板10的熱膨脹係數變大,介電係數也變高的傾向。矽酸鋅填充物對氧化鋁填
充物及矽酸鋅填充物的總量之質量比(矽酸鋅填充物/氧化鋁填充物及矽酸鋅填充物之總量)太大的話,會有陶瓷基板10的熱膨脹係數變小同時介電係數也變低,且陶瓷基板10的機械強度也變低的傾向。亦即,由保持陶瓷基板10的機械強度為高,同時縮小陶瓷基板10的熱膨脹係數,降低介電係數的觀點來看,氧化鋁填充物與矽酸鋅填充物的質量比(氧化鋁填充物:矽酸鋅填充物之總量)以在20:80~60:40之範圍內為佳,30:70~50:50之範圍內為更佳。
矽酸鋅填充物的平均粒徑比氧化鋁填充物的平均粒徑更小為較佳,為1/2倍以下為更佳。在此場合,填充物的填充率提高,機械強度提高。
陶瓷基板10中的玻璃以硼矽酸玻璃為佳。藉由使用硼矽酸玻璃,容易縮小陶瓷基板10的熱膨脹係數。此外,可以提高陶瓷基板10的機械強度。
具體而言,硼矽酸玻璃,作為玻璃組成,以質量百分比表示,最好是包含SiO2 60~80%、B2O3 10~30%、Li2O+Na2O+K2O 1~5%及MgO+CaO+SrO+BaO 0~20%。
以下,沒有特別說明的百分率為質量百分率。
SiO2為形成玻璃的骨骼之成分。SiO2含量以質量百分率表示以60~80%為佳。SiO2含量變少的話,會有難以玻璃化的場合。另一方面,含量變多的話,會有熔
融溫度變高,變得難以熔融的場合。SiO2含量之更佳的範圍為65~75%。
B2O3係形成玻璃的骨骼同時擴展玻璃化範圍,使玻璃安定化的成分。B2O3含量以質量百分率表示以10~30%為佳。B2O3含量變少的話,會有熔融溫度變高,變得難以熔融的傾向。另一方面,B2O3含量變多,會有陶瓷配線基板1的熱膨脹係數變大的傾向。B2O3含量之更佳的範圍為15~25%。
鹼金屬氧化物(Li2O、Na2O、K2O)係使熔融玻璃的黏度降低,使熔融變容易之成分。鹼金屬氧化物的含量(合計量)以質量百分率表示以1~5%為佳。鹼金屬氧化物的含量變少的話,會有使黏度降低的效果降低的場合。另一方面,鹼金屬氧化物的含量變多的話,會有耐水性降低的傾向。鹼金屬氧化物含量之更佳的範圍為2~4%。
鹼土類金屬氧化物(MgO、CaO、SrO、BaO)係使熔融玻璃的黏度降低,使熔融變容易之成分。鹼土類金屬氧化物的含量(合計量)以質量百分率表示以0~20%為佳。鹼土類金屬氧化物的含量變多的話,會有玻璃容易變得不安定,熔融玻璃時玻璃失去透明(失透)之傾向。鹼土類金屬氧化物含量之更佳的範圍為5~15%。
其次,說明陶瓷配線基板1之製造方法。
首先,準備包含前述玻璃粉末、第1陶瓷填充物及第2陶瓷填充物的陶瓷配線基板用玻璃陶瓷粉末。在此,於陶瓷配線基板用玻璃陶瓷粉末,最好是第1陶瓷
填充物為矽酸鋅(willemite)填充物,最好是第2陶瓷填充物為氧化鋁填充物。玻璃與氧化鋁填充物及矽酸鋅填充物之質量比(玻璃:氧化鋁填充物及矽酸鋅填充物)以在30:70~65:35之範圍內為佳,40:60~60:40之範圍內為更佳。氧化鋁填充物與矽酸鋅填充物之質量比(氧化鋁填充物:矽酸鋅填充物)以在20:80~60:40之範圍內為佳,30:70~50:50之範圍內為更佳。矽酸鋅填充物的平均粒徑比氧化鋁填充物的平均粒徑更小為較佳,為氧化鋁填充物的平均粒徑的1/2倍以下為更佳。
玻璃,以硼矽酸鹽系玻璃為佳,以前述組成之硼矽酸鹽系玻璃為更佳。玻璃粉末的平均粒徑在1μm~5μm之範圍內為佳。
其次,於陶瓷配線基板用玻璃陶瓷粉末,添加包含樹脂、可塑劑、溶劑等之結合劑,藉由混練製作泥漿。將該泥漿,藉由刮刀法等成形為薄板狀,製作包含玻璃、氧化鋁填充物及矽酸鋅填充物的陶瓷配線基板用陶瓷生胚片。
其次,在陶瓷生胚片形成貫孔(via hole)。貫孔之形成,例如可以藉由照射雷射光,或機械打孔等來進行。
其次,於形成的貫孔的內部,填充供形成貫孔電極22之用的導電性糊。此外,於陶瓷生胚片之上,塗布供形成層間電極21及電極墊31,32之用的導電性糊。
此後,適當層積陶瓷生胚片,得到層積體。可以藉由燒成該層積體而完成陶瓷配線基板1。
以下,對本發明,進而根據具體實施例進而詳細說明,但本發明並不受到以下實施例之任何限制,在不變更其要旨的範圍內,可以適當變更而實施。
以質量百分率表示,以成為SiO2 70%、B2O3 28%、K2O 2%的方式,調和玻璃原料,對白金坩堝投入玻璃原料,在1600℃進行熔融得到熔融玻璃。藉由把熔融玻璃供給至水冷的2個水冷的2個旋轉輥間,延伸熔融玻璃,得到薄膜狀的玻璃。
把如此得到的玻璃,藉由球磨機粉碎,得到平均粒徑2.2μm的玻璃粉末。
對於以成為玻璃粉末45質量份,平均粒徑2.0μm的氧化鋁粉末30質量份,平均粒徑0.8μm的矽酸鋅粉末25質量份的方式調製之混合粉末100質量份,混合聚乙烯丁縮醛(PVB)15質量份,鄰苯二甲酸苄基丁酯3質量份、甲苯50質量份而混練之後,藉由刮刀法,得到厚度150μm的生胚片。
將生胚片沖壓加工,得到直徑20.32cm(8吋)的圓形生胚片成形體。接著,對此生胚片成形體,藉由雷射開孔機形成直徑100μm,間隔500μm的貫通孔,藉由印刷埋入貫孔導體。此外,藉由印刷導電性糊而形成層間
電極及電極墊。其後,層積生胚片成形體,進而作為拘束構件,層積由氧化鋁填充物構成的氧化鋁生胚片,製作了層積體。
其次,以90℃、30MPa熱壓接層積體。其後,以450℃熱處理層積體脫脂之後,以850℃燒結得到燒結體。藉著研磨所得到的燒結體除去拘束構件,製作厚度3.0mm的陶瓷配線基板。
所得到的陶瓷配線基板在-40~125℃之溫度範圍的熱膨脹係數為3.9ppm/℃,與半導體晶圓的熱膨脹係數幾乎為相同值。
藉由依據JIS R1601(2008)的方法測定的陶瓷配線基板之3點彎曲強度,為300MPa,具有充分的強度。
接著,將此陶瓷配線基板用於探針卡,以此探針卡在-40~+125℃之溫度範圍檢查半導體晶圓,可以毫無問題地檢查半導體晶圓。
除了以下幾點以外,與實施例1同樣進行製作了陶瓷配線基板。
玻璃原料的組成以質量百分率表示,為SiO2 65%、B2O3 15%、CaO 16%、K2O 4%。
玻璃粉末之平均粒徑為2.0μm。
對於以成為玻璃粉末40質量%,氧化鋁填充
物粉末25質量%,矽酸鋅填充物粉末35質量%的方式調製之混合粉末100質量份,混合甲基丙烯酸樹脂15質量份,鄰苯二甲酸苄基丁酯3質量份、甲苯50質量份而混練之後,藉由刮刀法,得到厚度150μm的生胚片。
所得到的陶瓷配線基板在-40~125℃之溫度範圍的熱膨脹係數為3.4ppm/℃,與半導體晶圓的熱膨脹係數幾乎為相同值。
藉由依據JIS R1601(2008)的方法測定的陶瓷配線基板之3點彎曲強度,為280MPa,具有充分的強度。
接著,將此陶瓷配線基板用於探針卡,以此探針卡在-40~+125℃之溫度範圍檢查半導體晶圓,可以毫無問題地檢查半導體晶圓。
除了以下幾點以外,與實施例1同樣進行製作了陶瓷配線基板。
對於以成為玻璃粉末60質量份,氧化鋁填充物粉末40質量份的方式調製之混合粉末100質量份,混合聚乙烯丁縮醛(PVB)15質量份、鄰苯二甲酸苄基丁酯3質量份、甲苯50質量份而混練之後,藉由刮刀法,得到厚度150μm的生胚片。
所得到的陶瓷配線基板在-40~125℃之溫度範圍的熱膨脹係數為6.2ppm/℃,成為比半導體晶圓的熱
膨脹係數更大之值。
藉由依據JIS R1601(2008)的方法測定的陶瓷配線基板之3點彎曲強度,為280MPa。
接著,將此陶瓷配線基板用於探針卡,以此探針卡在-40~+125℃之溫度範圍檢查半導體晶圓,由於陶瓷配線基板的膨脹,無法正確地檢查半導體晶圓。
Claims (11)
- 一種陶瓷配線基板,其特徵為:前述陶瓷配線基板具備:陶瓷基板、以及配設於前述陶瓷基板內的內部導體,並且前述陶瓷基板包含硼矽酸玻璃、第1陶瓷填充物及第2陶瓷填充物,前述第1陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數比前述第2陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數更低,前述第2陶瓷填充物的3點彎曲強度比前述第1陶瓷填充物的3點彎曲強度更高。
- 如申請專利範圍第1項之陶瓷配線基板,其中前述第1陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數為-8~+5ppm/℃,前述第2陶瓷填充物之3點彎曲強度為400~800MPa。
- 如申請專利範圍第1或2項之陶瓷配線基板,其中前述陶瓷基板包含3種以上的陶瓷填充物;前述第1陶瓷填充物的溫度範圍-40℃~+125℃之熱膨脹係數在前述3種以上的陶瓷填充物之中是最低的,前述第2陶瓷填充物之各陶瓷填充物的3點彎曲強度在前述3種以上的陶瓷填充物之中是最高的。
- 如申請專利範圍第1或2項之陶瓷配線基板,其中 前述陶瓷基板係由硼矽酸玻璃、第1陶瓷填充物及第2陶瓷填充物所構成。
- 如申請專利範圍第1或2項之陶瓷配線基板,其中前述第1陶瓷填充物為矽酸鋅(willemite)填充物,前述第2陶瓷填充物為氧化鋁填充物。
- 如申請專利範圍第5項之陶瓷配線基板,其中前述硼矽酸玻璃與前述氧化鋁填充物及前述矽酸鋅填充物之質量比(前述硼矽酸玻璃:前述氧化鋁填充物及前述矽酸鋅填充物)在30:70~65:35之範圍內,前述氧化鋁填充物與前述矽酸鋅填充物之質量比(前述氧化鋁填充物:前述矽酸鋅填充物)在20:80~60:40之範圍內。
- 如申請專利範圍第5項之陶瓷配線基板,其中前述矽酸鋅填充物的平均粒徑比前述氧化鋁填充物的平均粒徑更小。
- 如申請專利範圍第1或2項之陶瓷配線基板,其中前述硼矽酸玻璃,作為硼矽酸玻璃組成,以質量百分比計而包含SiO260~80%、B2O310~30%、Li2O+Na2O+K2O1~5%及MgO+CaO+SrO+BaO 0~20%。
- 如申請專利範圍第1或2項之陶瓷配線基板,其中前述陶瓷基板在溫度範圍-40℃~+125℃之熱膨脹係數為4ppm/℃以下。
- 一種陶瓷配線基板用陶瓷生胚片,其特徵為前述陶瓷配線基板用陶瓷生胚片包含硼矽酸玻璃、第1陶瓷填充物及第2陶瓷填充物, 前述第1陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數比前述第2陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數更低,前述第2陶瓷填充物的3點彎曲強度比前述第1陶瓷填充物的3點彎曲強度更高。
- 一種陶瓷配線基板用玻璃陶瓷粉末,其特徵為前述陶瓷配線基板用玻璃陶瓷粉末包含硼矽酸玻璃、第1陶瓷填充物及第2陶瓷填充物,前述第1陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數比前述第2陶瓷填充物在溫度範圍-40℃~+125℃之熱膨脹係數更低,前述第2陶瓷填充物的3點彎曲強度比前述第1陶瓷填充物的3點彎曲強度更高。
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