TWI633178B - 漿液組合物、清洗組合物、基板拋光方法及清洗方法 - Google Patents

漿液組合物、清洗組合物、基板拋光方法及清洗方法 Download PDF

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Publication number
TWI633178B
TWI633178B TW104129403A TW104129403A TWI633178B TW I633178 B TWI633178 B TW I633178B TW 104129403 A TW104129403 A TW 104129403A TW 104129403 A TW104129403 A TW 104129403A TW I633178 B TWI633178 B TW I633178B
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TW
Taiwan
Prior art keywords
water
polishing
soluble polymer
slurry composition
cleaning
Prior art date
Application number
TW104129403A
Other languages
English (en)
Chinese (zh)
Other versions
TW201615797A (zh
Inventor
Hiroshi Kitamura
北村啟
Tsuyoshi Masuda
增田剛
Yoshiyuki Matsumura
松村義之
Original Assignee
Cabot Microelectronics Corporation
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corporation, 卡博特微電子公司 filed Critical Cabot Microelectronics Corporation
Publication of TW201615797A publication Critical patent/TW201615797A/zh
Application granted granted Critical
Publication of TWI633178B publication Critical patent/TWI633178B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3753—Polyvinylalcohol; Ethers or esters thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials Engineering (AREA)
TW104129403A 2014-09-05 2015-09-04 漿液組合物、清洗組合物、基板拋光方法及清洗方法 TWI633178B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014181015A JP6559936B2 (ja) 2014-09-05 2014-09-05 スラリー組成物、リンス組成物、基板研磨方法およびリンス方法
JP2014-181015 2014-09-05

Publications (2)

Publication Number Publication Date
TW201615797A TW201615797A (zh) 2016-05-01
TWI633178B true TWI633178B (zh) 2018-08-21

Family

ID=54197031

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104129403A TWI633178B (zh) 2014-09-05 2015-09-04 漿液組合物、清洗組合物、基板拋光方法及清洗方法

Country Status (5)

Country Link
JP (1) JP6559936B2 (https=)
KR (1) KR102524838B1 (https=)
CN (1) CN107075309B (https=)
TW (1) TWI633178B (https=)
WO (1) WO2016035346A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6801964B2 (ja) * 2016-01-19 2020-12-16 株式会社フジミインコーポレーテッド 研磨用組成物及びシリコン基板の研磨方法
JP6971676B2 (ja) * 2016-08-29 2021-11-24 株式会社荏原製作所 基板処理装置および基板処理方法
KR20190045249A (ko) 2016-08-31 2019-05-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 연마용 조성물 세트
JP6495230B2 (ja) * 2016-12-22 2019-04-03 花王株式会社 シリコンウェーハ用リンス剤組成物
WO2018124226A1 (ja) * 2016-12-28 2018-07-05 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
JP7077236B2 (ja) * 2016-12-28 2022-05-30 ニッタ・デュポン株式会社 研磨用組成物
WO2019187969A1 (ja) * 2018-03-30 2019-10-03 株式会社フジミインコーポレーテッド 研磨用組成物
JP7361467B2 (ja) * 2018-12-25 2023-10-16 ニッタ・デュポン株式会社 研磨用組成物
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
JP7495283B2 (ja) * 2019-09-06 2024-06-04 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法
CN112457930A (zh) * 2019-09-06 2021-03-09 福吉米株式会社 表面处理组合物、表面处理组合物的制造方法、表面处理方法和半导体基板的制造方法
JP7477964B2 (ja) * 2019-12-13 2024-05-02 インテグリス・インコーポレーテッド 化学機械研磨組成物及びそれを用いた化学機械研磨方法
JP6884898B1 (ja) * 2020-01-22 2021-06-09 日本酢ビ・ポバール株式会社 研磨用組成物
JP7495317B2 (ja) * 2020-09-25 2024-06-04 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法
JP7645682B2 (ja) * 2021-03-31 2025-03-14 株式会社フジミインコーポレーテッド 表面処理組成物、表面処理組成物の製造方法、表面処理方法、及び半導体基板の製造方法
KR102728251B1 (ko) * 2021-12-31 2024-11-11 주식회사 케이씨텍 컨택 공정용 금속막 슬러리 조성물
KR20230106938A (ko) * 2022-01-07 2023-07-14 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
CN115873508A (zh) * 2022-12-26 2023-03-31 博力思(天津)电子科技有限公司 去除速率高且表面粗糙度低的SiC衬底抛光液及抛光工艺

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TW200517481A (en) * 2003-09-05 2005-06-01 Fujimi Inc Polishing composition
TW201204818A (en) * 2010-06-18 2012-02-01 Hitachi Chemical Co Ltd Polishing agent for semiconductor substrate and fabricating method of semiconductor wafer

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US6503418B2 (en) * 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
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KR101970858B1 (ko) * 2012-03-14 2019-04-19 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 반도체 기판의 제조 방법
US9133366B2 (en) * 2012-05-25 2015-09-15 Nissan Chemical Industries, Ltd. Polishing liquid composition for wafers
JP2014038906A (ja) * 2012-08-13 2014-02-27 Fujimi Inc 研磨用組成物、当該研磨用組成物の製造方法、及び当該研磨用組成物を用いた半導体基板の製造方法
JP5893706B2 (ja) * 2013-10-25 2016-03-23 花王株式会社 シリコンウェーハ用研磨液組成物

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
TW200517481A (en) * 2003-09-05 2005-06-01 Fujimi Inc Polishing composition
TW201204818A (en) * 2010-06-18 2012-02-01 Hitachi Chemical Co Ltd Polishing agent for semiconductor substrate and fabricating method of semiconductor wafer

Also Published As

Publication number Publication date
KR20170048513A (ko) 2017-05-08
WO2016035346A1 (en) 2016-03-10
JP6559936B2 (ja) 2019-08-14
CN107075309B (zh) 2020-09-01
TW201615797A (zh) 2016-05-01
KR102524838B1 (ko) 2023-04-24
JP2016056220A (ja) 2016-04-21
CN107075309A (zh) 2017-08-18

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