TWI632606B - Method of etching an insulating film - Google Patents

Method of etching an insulating film Download PDF

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TWI632606B
TWI632606B TW104118241A TW104118241A TWI632606B TW I632606 B TWI632606 B TW I632606B TW 104118241 A TW104118241 A TW 104118241A TW 104118241 A TW104118241 A TW 104118241A TW I632606 B TWI632606 B TW I632606B
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period
frequency power
insulating film
gas
etching
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TW104118241A
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TW201611117A (zh
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高橋陽
中山溪
五十嵐義樹
廣津信
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東京威力科創股份有限公司
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    • H01L21/311—Etching the insulating layers by chemical or physical means
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Abstract

提供一種蝕刻絕緣膜之方法。
一實施形態的方法係包含有：(a)在第1期間內，為了激發供給至電漿處理裝置之處理容器內的含氟碳之處理氣體，而週期性地切換高頻電力之ON與OFF的工序；以及(b)在為接續第1期間的第2期間，且較第1期間內的高頻電力為ON之期間要長的該第2期間內，為了激發供給至處理容器內之處理氣體，而將高頻電力連續性地設定為ON之工序。

Description

蝕刻絕緣膜之方法
本發明之實施形態係關於一種蝕刻絕緣膜之方法。
電子元件之製造中，會於層間絕緣膜形成有接觸用之開口。具有該層間絕緣膜之被處理體中，層間絕緣膜係被形成於配線層上，該層間絕緣膜層上係設置有用以形成開口而由有機膜所構成之遮罩。為了於此般被處理體之絕緣膜形成開口，一般而言會使用電漿蝕刻。
層間絕緣膜之電漿蝕刻中，係在電漿處理裝置之處理容器內，激發含氟碳之處理氣體。藉由以此所生成之活性基，來蝕刻絕緣膜。
下述專利文獻1係揭露有此般之電漿蝕刻。專利文獻1所記載的電漿蝕刻中，係週期性地切換用以激發處理氣體之高頻電力的ON與OFF。
【先前技術文獻】
【專利文獻】
專利文獻1：日本特開2000-311890號公報
然而，為了蝕刻絕緣膜，便需要抑制遮罩以及配線層之蝕刻，亦即，具有選擇性。然而，以往的電漿蝕刻中，卻無法相對於絕緣膜之蝕刻，而充分地抑制遮罩及配線層之蝕刻。
從而，便需要相對於遮罩及配線層來選擇性地蝕刻絕緣膜。
一面相中，係提供一種蝕刻被處理體之絕緣膜的方法。被處理體係具有由配線層、該配線層上所設置之絕緣膜以及該絕緣膜上所設置之有機膜 所構成遮罩。該方法係包含有：(a)在第1期間內，為了激發供給至電漿處理裝置之處理容器內的含氟碳之處理氣體，而週期性地切換高頻電力之ON與OFF的工序(以下，稱為「第1工序」)；以及(b)在為接續第1期間的第2期間，且在第1期間內由高頻電力為ON的期間與高頻電力為OFF的期間所構成的一週期內，於較高頻電力為ON之期間要長的該第2期間內，為了激發供給至處理容器內之處理氣體，而將高頻電力連續性地設定為ON的工序(以下，稱為「第2工序」)。該方法中，第1工序與第2工序會交互地反覆。一實施形態中，絕緣膜係氧化矽製，配線層係多晶矽製或鎢製。
該方法之第1期間中，係週期性地切換高頻電力之ON與OF。藉由第1期間中之高頻電力的供給，亦即，ON與OFF會交互地切換之高頻電力的供給，便會從氟碳生成相較於次等活性基而以高等活性基為主之活性基。高等活性基會易於附著於遮罩表面，而在絕緣膜之蝕刻中形成保護遮罩之保護膜。又，高等活性基會難以到達所形成之開口的深處，從而，便無法形成保護配線層之膜。
另一方面，第2期間中，係將高頻電力連續性地設定為ON。藉由第2期間之高頻電力的供給，亦即連續性地維持ON狀態之高頻電力的供給，便會從氟碳生成相較於高等活性基而以次等活性基為主之活性基。亦即，藉由第2期間之高頻電力的供給，便會使得氟碳之解離度變得較第1期間之高頻電力的供給要高。次等活性基雖可能較多地蝕刻遮罩，但可到達至開口之深處而在配線層上形成保護膜。從而，藉由將第1工序與第2工序交互地反覆實行，便可在絕緣膜之蝕刻中保護遮罩及配線層。因此，根據該方法，便可相對於遮罩及配線層來選擇性地蝕刻絕緣膜。
一實施形態中，絕緣膜亦可為單一膜。又，一實施形態中，第2期間可為較一週期內之高頻電力為ON的期間要長100倍以上的期間。
如上述說明，便可相對於遮罩及配線層來選擇性地蝕刻絕緣膜。
10‧‧‧電漿處理裝置
12‧‧‧處理容器
PD‧‧‧載置台
ESC‧‧‧靜電夾具
LE‧‧‧下部電極
30‧‧‧上部電極
34‧‧‧電極板
40‧‧‧氣體源群
42‧‧‧閥群
44‧‧‧流量控制器群
50‧‧‧排氣裝置
62‧‧‧第1高頻電源
64‧‧‧第2高頻電源
70‧‧‧電源
Cnt‧‧‧控制部
W‧‧‧晶圓
102‧‧‧配線層
104‧‧‧絕緣層
106‧‧‧遮罩
108、110‧‧‧保護膜
圖1係顯示一實施形態相關的蝕刻絕緣膜之方法的流程圖。
圖2係顯示被處理體之一範例的圖式。
圖3係概略地顯示一實施形態相關之電漿處理裝置的圖式。
圖4係顯示圖1所示方法的各工序中一範例之被處理體狀態之剖面圖。
圖5係顯示圖1所示方法的各工序中之高頻電力及高頻偏壓電力的波形之圖式。
以下，便參照圖式就各實施形態來詳細地說明。另外，各圖式中，對於相同或相當之部分係附加相同之符號。
圖1係顯示一實施形態相關的蝕刻絕緣膜之方法的流程圖。圖1所示之方法MT係蝕刻被處理體(以下，稱為「晶圓W」)的絕緣膜之方法，且包含有交互地反覆之工序S1及工序S2。
圖2係顯示被處理體之一範例的圖式。方法MT係可適用於例如圖2所示之晶圓W。該晶圓W係具有配線層102、絕緣膜104以及遮罩106。配線層102係由例如多晶矽或鎢所構成。
絕緣膜104係被設置於配線層102上。一實施形態中，絕緣膜104係單一之絕緣膜，亦即單層。又，一實施形態中，絕緣膜104係層間絕緣膜，且例如由氧化矽所構成。絕緣膜104只要為藉由使用氟碳氣體之電漿，便可相對於配線層102及遮罩106來選擇性地蝕刻之絕緣膜的話，便可由任意材料所構成。遮罩106係被設置於絕緣膜104上。遮罩106係由有機膜所構成。例如，遮罩106係由非晶碳或阻劑材料所構成。遮罩106係形成有應轉印於絕緣膜104之圖案。亦即，遮罩106係形成有開口。
為了實施方法MT，可使用圖3所示之電漿處理裝置。圖3係概略地顯示一實施形態相關之電漿處理裝置的圖式。如圖3所示，電漿處理裝置10係電容耦合型電漿蝕刻裝置，且具備有處理容器12。處理容器12係具有略圓筒形狀。處理容器12係例如由鋁所構成，且其內壁面係施有陽極氧化處理。該處理容器12係保全接地。
處理容器12之底部上係設置有略圓筒狀之支撐部14。支撐部14係例如由絕緣材料所構成。支撐部14係在處理容器12內，從處理容器12之底 部延伸於垂直方向。又，處理容器12內係設置有載置台PD。載置台PD係藉由支撐部14而被加以支撐。
載置台PD係在其上面保持晶圓W。載置台PD係具有下部電極LE及靜電夾具ESC。下部電極LE係含有第1板部18a及第2板部18b。第1板部18a及第2板部18b係例如由所謂鋁之金屬所構成，且成為略圓盤形狀。第2板部18b係被設置於第1板部18a上，並電性連接於第1板部18a。
第2板部18b上係設置有靜電夾具ESC。靜電夾具ESC係具有將導電膜之電極配置於一對絕緣層或絕緣板間的構造。靜電夾具ESC之電極係透過開關23來電性連接有直流電源22。該靜電夾具ESC係藉由來自直流電源22之直流電壓所產生的庫倫力等之靜電力來吸附晶圓W。藉此，靜電夾具ESC便可保持晶圓W。
第2板部18b之周緣部上係以圍繞晶圓W之邊緣及靜電夾具ESC之方式來配置有聚焦環FR。聚焦環FR係為了提升蝕刻之均勻性而被加以設置。聚焦環FR會因蝕刻對象膜的材料而由適當選擇之材料所構成，例如可由石英所構成。
第2板部18b內部係設置有冷媒流道24。冷媒流道24係構成溫控機構。冷媒流道24係從設置於處理容器12外部的冷卻單元透過配管26a來供給冷媒。供給至冷媒流道24之冷媒會透過配管26b而回到冷卻單元。如此般，冷媒流道24係以循環之方式來供給有冷媒。藉由控制該冷媒之溫度，來控制靜電夾具ESC所支撐之晶圓W的溫度。
又，電漿處理裝置10係設置有氣體供給線路28。氣體供給線路28會將來自導熱氣體供給機構之導熱氣體，例如He氣體供給至靜電夾具ESC上面與晶圓W內面之間。
又，電漿處理裝置10係設置有為加熱元件之加熱器HT。加熱器HT係例如被埋設於第2板部18b內。加熱器HT係連接有加熱器電源HP。藉由從加熱器電源HP來將電力供給至加熱器HT，便可調整載置台PD之溫度，而調整該載置台PD上所載置之晶圓W的溫度。另外，加熱器HT亦可內建於靜電夾具ESC。
又，電漿處理裝置10係具備有上部電極30。上部電極30係在載置台PD上方，對向配置於該載置台PD。下部電極LE與上部電極30係互相設置為略平行。該等上部電極30與下部電極LE之間係提供有用以對晶圓W進行電漿處理之處理空間S。
上部電極30會透過絕緣性遮蔽構件32來被處理容器12上部所支撐。一實施形態中，上部電極30係可構成為可改變起自載置台PD上面，亦即，晶圓載置面之垂直方向中的距離。上部電極30係可含有電極板34及電極支撐體36。電極板34係面向處理空間S，該電極板34係設置有複數氣體噴出孔34a。一實施形態中，該電極板34係由矽所構成。
電極支撐體36係裝卸自如地支撐電極板34者，並可由例如所謂鋁之導電性材料所構成。該電極支撐體36係可具有水冷構造。電極支撐體36內部係設置有氣體擴散室36a。連通於氣體噴出孔34a之複數氣體流通孔36b會從該氣體擴散室36a朝下方延伸。又，電極支撐體36係形成有將處理氣體引導至氣體擴散室36a之氣體導入口36c，該氣體導入口36c係連接有氣體供給管38。
氣體供給管38係透過閥群42及流量控制器群44來連接有氣體源群40。氣體源群40係具有複數氣體源。複數氣體源係可含有一種以上之氟碳氣體源、氧氣(O2氣體)源以及稀有氣體源。氟碳氣體可為含有C4F6、C4F8以及C6F6中之至少任一種的氣體。一實施形態中，複數氣體源係可含有C4F6氣體源以及C4F8氣體源。又，稀有氣體可為所謂Ar氣體、He氣體之任意的稀有氣體源。
閥群42係含有複數閥，流量控制器群44係含有所謂質流控制器之複數流量控制器。氣體源群40之複數氣體源會分別透過閥群42所對應之閥及流量控制器群44所對應之流量控制器，來連接於氣體供給管38。
又，電漿處理裝置10中，係沿著處理容器12內壁來裝卸自如地設置有沉積保護罩46。沉積保護罩46亦被設置於支撐部14外周。沉積保護罩46係防止蝕刻副產物(沉積)附著於處理容器12者，且可藉由於鋁材披覆Y2O3等之陶瓷來加以構成。
處理容器12底部側以及支撐部14與處理容器12側壁之間係設置有排氣板部48。排氣板部48係可藉由例如，於鋁材披覆Y2O3等之陶瓷來加以構成。該排氣板部48下方及處理容器12係設置有排氣口12E。排氣口12E係透過排氣管52來連接有排氣裝置50。排氣裝置50係具有渦輪分子泵等之真空泵，並可將處理容器12內空間減壓至所欲之真空度。又，處理容器12側壁係設置有晶圓W搬出入口12g，該搬出入口12g係可藉由閘閥54來加以開閉。
又，電漿處理裝置10係進一步地具備有第1高頻電源62及第2高頻電源64。第1高頻電源62係產生電漿生成用之第1高頻電力的電源，並產生27~100MHz之頻率，在一範例中為40MHz之高頻電力。第1高頻電源62係透過匹配器66來連接於下部電極LE。匹配器66係用以匹配第1高頻電源62之輸出阻抗與負載側(下部電極LE側)之輸入阻抗的電路。
第2高頻電源64係產生用以將離子吸引至晶圓W的第2高頻電力，亦即高頻偏壓電力之電源，並產生範圍在400kHz~13.56MHz內之頻率，在一範例中係3.2MHz之高頻偏壓電力。第2高頻電源64係透過匹配器68來連接於下部電極LE。匹配器68係用以匹配第2高頻電源64之輸出阻抗與負載側(下部電極LE側)之輸入阻抗的電路。
又，電漿處理裝置10係進一步地具備有電源70。電源70係連接於上部電極30。電源70係將用以吸引處理空間S內所存在之正離子至電極板34的電壓施加至上部電極30。一範例中，電源70係產生負直流電壓之直流電源。另一範例中，電源70亦可為產生較低頻率之交流電壓的交流電源。從電源70施加至上部電極的電壓可為-150V以下之電壓。亦即，藉由電源70來施加至上部電極30之電壓可為絕對值為150V以上之負電壓。在從電源70施加此般電壓至上部電極30時，處理空間S所存在之正離子便會衝撞於電極板34。藉此，便會從電極板34釋放二次電子及/或矽。
又，一實施形態中，電漿處理裝置10可進一步地具備有控制部Cnt。控制部Cnt係具備有處理器、記憶部、輸入裝置、顯示裝置等之電腦，並控制電漿處理裝置10之各部。具體而言，控制部Cnt係連接於閥群42、流量控制器群44、排氣裝置50、第1高頻電源62、匹配器66、第2高頻電 源64、匹配器68、電源70、加熱器電源HP以及冷卻單元。
控制部Cnt係基於所輸入之配方而依照程式來動作，並送出控制訊號。藉由來自控制部Cnt之控制訊號，便可控制從氣體源群所供給之氣體的選擇及流量、排氣裝置50之排氣、來自第1高頻電源62及第2高頻電源64的電力供給、來自電源70之電壓施加、加熱器電源HP之電力供給、來自冷卻單元之冷媒流量以及冷媒溫度。
再次參照圖1，與控制部Cnt之各種控制一同地，就方法MT之各工序來詳細地說明。又，在此，除了圖1以外，又參照圖4及圖5。圖4係顯示方法MT之各工序中一範例的被處理體之狀態的剖面圖。圖5係顯示方法MT之各工序中高頻電力及高頻偏壓電力的波形之圖式。
方法MT之工序S1中，係將含氟碳氣體之處理氣體供給至處理容器12內。處理氣體係可含有例如C4F6氣體、C4F8氣體、O2氣體以及Ar氣體。又，方法MT中，係在實行工序S1之第1期間T1內，週期性地切換從第1高頻電源62所供給的高頻電力HF之ON與OFF。亦即，在第1期間T1內，脈衝狀地供給高頻電力HF。高頻電力HF之ON與OFF的切換頻率係在0.1kHz~100kHz範圍內的頻率。例如，該頻率為10kHz。又，在藉由該頻率來制定的一週期內，高頻電力HF為ON之期間T3所佔之比例，亦即，佔空比為5%~95%之範圍內的比。例如，佔空比為50%。
一實施形態之工序S1中，亦可同步於高頻電力HF之ON/OFF，而週期性地切換從第2高頻電源64所供給之高頻偏壓電力LF的ON與OFF。亦即，亦可在第1期間T1內，脈衝狀地供給高頻偏壓電力LF。
該工序S1中，係藉由脈衝狀地供給之高頻電力HF，來激發處理氣體。在基於脈衝狀地供給之高頻電力HF而生成的電漿中，氟碳係以高等活性基會較所謂F、CF、CF2之次等活性基要多之方式來加以解離。換言之，工序S1中，氟碳之解離度會較後述工序S2的氟碳之解離度要低。
如圖4(a)所示，高等活性基會容易附著於遮罩106表面，而在利用氟或氟碳之活性基來蝕刻絕緣膜104中，將保護遮罩106之保護膜108形成於該遮罩106表面上。另外，高等活性基係具有難以到達蝕刻所形成之開口OP深處之特性。
在使用電漿處理裝置10來實行該工序S1的情況，控制部Cnt係以所設定之流量來供給該處理氣體至處理容器12內的方式，來控制閥群42及流量控制器群44。又，控制部Cnt係以處理空間S之壓力會成為被設定好之壓力的方式來控制排氣裝置50。又，控制部Cnt係以脈衝狀地供給高頻電力HF及高頻偏壓電力LF之方式來控制第1高頻電源62及第2高頻電源64。
另外，控制部Cnt亦可在高頻電力HF為OFF期間中，以施加來自電源70之電壓至上部電極30的方式來控制電源70。在從電源70施加電壓至上部電極30時，便會藉由從電極板34所放出之二次電子來改質遮罩106。藉此，便可提升遮罩106之耐電漿性。又，可中和晶圓W之帶電。藉此，便可提升蝕刻速率或蝕刻之直進性。
方法MT中，係即便在接續之工序S2中，亦供給與工序S1相同之處理氣體至處理容器12內。又，方法MT中，係在實行工序S2之第2期間T2內，將從第1高頻電源62所供給之高頻電力HF連續性地設定為ON。亦即，第2期間T2中，係連續性地供給高頻電力HF。第2期間T2在一實施形態中，係具有期間T3之100倍以上時間長度。例如，第2期間T2係可設定為5秒~100秒之範圍內的時間長度。又，一實施形態之工序S2中，亦可與高頻電力HF相同地，連續性地供給從第2高頻電源64所供給之高頻偏壓電力LF。
該工序S2中，係藉由連續性地供給之高頻電力HF，來激發處理氣體。在基於連續性地供給之高頻電力HF而生成之電漿中，氟碳係以所謂F、CF、CF2之次等活性基會較高等活性基要多之方式來加以解離。換言之，工序S2中，氟碳之解離度會較工序S1的氟碳之解離度要高。
如圖4(b)所示，次等活性基雖可能較多地蝕刻遮罩106，但卻可到達開口OP深處而在配線層102上形成保護膜110。從而，根據工序S2，便可抑制配線層102之蝕刻。
在使用電漿處理裝置10來實行該工序S2情況，控制部Cnt係以設定好的流量來供給該處理氣體至處理容器12內的方式來控制閥群42及流量控制器群44。又，控制部Cnt係以處理空間S之壓力會成為設定好之壓力 的方式來控制排氣裝置50。又，控制部Cut係以連續性地供給高頻電力HF及高頻偏壓電力LF的方式來控制第1高頻電源62及第2高頻電源64。另外，控制部Cnt亦可在第2期間T2中，以施加來自電源70之電壓至上部電極30的方式來控制電源70。
方法MT中，係在接續之工序S3中，判定是否已滿足停止條件。停止條件係例如，在含有工序S1及工序S2之程序的實行次數達到既定次數時便滿足。例如，既定次數為10次。在工序S3之判定結果為NO的情況，便會再度返回工序S1及工序S2之實行。另一方面，在工序S3之判定結果為YES的情況則結束方法MT之程序。
根據上述所說明之方法MT，藉由交互反覆地實行工序S1與工序S2，便可在絕緣膜104之蝕刻中，於遮罩106及配線層102雙方上形成保護膜。因此，根據此方法MT，便可相對於遮罩106及配線層102來選擇性地蝕刻絕緣膜104。
以上，雖已就各實施形態來加以說明，但並不被限定於上述實施形態而可構成各種變形態樣。例如，第1高頻電源62亦可透過匹配器66來連接於上部電極30。

Claims (5)

  1. 一種方法，係蝕刻被處理體的絕緣膜之方法，其中該被處理體係具有由配線層、該配線層上所設置之該絕緣膜以及該絕緣膜上所設置之有機膜所構成的遮罩；該方法係包含有：在第1期間內，為了激發供給至電漿處理裝置之處理容器內的含氟碳之處理氣體，而週期性地切換高頻電力的ON與OFF之工序；以及在為接續該第1期間之第2期間，且在該第1期間內由該高頻電力為ON的期間與該高頻電力為OFF的期間所構成的一週期內，於較該高頻電力為ON的期間要長之該第2期間內，為了激發供給至該處理容器內之該處理氣體，而將該高頻電力連續性地設定為ON之工序；週期性地切換該高頻電力的ON與OFF之該工序與將該高頻電力連續性地設定為ON之該工序會交互地反覆。
  2. 如申請專利範圍第1項之方法，其中該絕緣膜係單一膜。
  3. 如申請專利範圍第1項之方法，其中該第2期間係較該一週期內之該高頻電力為ON的該期間要長100倍以上之期間。
  4. 如申請專利範圍第2項之方法，其中該第2期間係較該一週期內之該高頻電力為ON的該期間要長100倍以上之期間。
  5. 如申請專利範圍第1至4項中任一項之方法，其中將該高頻電力連續性地設定為ON之該工序中，氟碳之解離度會較週期性地切換該高頻電力之ON與OFF的該工序要高。
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JP6568822B2 (ja) * 2016-05-16 2019-08-28 東京エレクトロン株式会社 エッチング方法
JP6811202B2 (ja) * 2018-04-17 2021-01-13 東京エレクトロン株式会社 エッチングする方法及びプラズマ処理装置
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
FR3091410B1 (fr) * 2018-12-26 2021-01-15 St Microelectronics Crolles 2 Sas Procédé de gravure
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