CN105304484B - 绝缘膜的蚀刻方法 - Google Patents
绝缘膜的蚀刻方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 65
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000010494 dissociation reaction Methods 0.000 claims description 6
- 230000005593 dissociations Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 54
- 239000010410 layer Substances 0.000 description 24
- 238000005530 etching Methods 0.000 description 18
- 239000003507 refrigerant Substances 0.000 description 11
- 230000006978 adaptation Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
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- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000028016 temperature homeostasis Effects 0.000 description 1
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Abstract
本发明提供一种对绝缘膜进行蚀刻的方法。一实施方式的方法包括:(a)在第一期间内,为了激励被供给到等离子体处理装置的处理容器内的包含碳氟化合物的处理气体,周期性地切换高频电力的接通和断开的步骤;和(b)在接着第一期间之后的第二期间,为了激发被供给到处理容器内的处理气体,将高频电力设定为连续接通的步骤,该第二期间内高频电力接通的期间比第一期间内高频电力接通的期间长。
Description
技术领域
本发明的实施方式涉及绝缘膜的蚀刻方法。
背景技术
在电子器件的制造中,存在在层间绝缘膜形成触点(contact)用的开口。在具有该层间绝缘膜的被处理体中,层间绝缘膜形成在配线层上,在该层间绝缘膜层上设置有用于形成开口的由有机膜构成的掩模。为了在这样的被处理体的绝缘膜形成开口,一般使用等离子体蚀刻。
在层间绝缘膜的等离子体蚀刻中,在等离子体处理装置的处理容器内,包含碳氟化合物(fluorocarbon)的处理气体被激励。通过由此生成的活性种将绝缘膜蚀刻。
在下述的专利文献1中公开了这样的等离子体蚀刻。在专利文献1记载的等离子体蚀刻中,用于激励处理气体的高频电力被周期性地切换为接通(ON)和断开(OFF)。
现有技术文献
专利文献1:日本特开2000-311890号公报
发明内容
发明要解决的技术问题
但是,绝缘膜的蚀刻要求抑制掩模和配线层的蚀刻即具有选择性。然而,在现有的等离子体蚀刻中,对于绝缘膜的蚀刻无法充分地抑制掩模和配线层的蚀刻。
因此,需要相对于掩模和配线层有选择地对绝缘膜进行蚀刻。
用于解决技术问题的技术方案
本发明的一个方面提供一种对被处理体的绝缘膜进行蚀刻的方法。被处理体包括配线层、设置在该配线层上的绝缘膜、以及设置在该绝缘膜上的由有机膜构成的掩模。该蚀刻方法包括:(a)在第一期间内,为了激励被供给到等离子体处理装置的处理容器内的包含碳氟化合物的处理气体,周期性地切换高频电力的接通和断开的步骤(以下称为“第一步骤”);和(b)在接着第一期间之后的第二期间,为了激励被供给到处理容器内的处理气体,将高频电力设定为连续接通的步骤(以下称为“第二步骤”),其中,该第二期间内高频电力接通的时间比第一期间内在由高频电力接通的期间和高频电力断开的期间构成的一周期内高频电力接通的时间长。在该方法中,第一步骤和第二步骤交替地反复进行。在一实施方式中,绝缘膜为氧化硅制,配线层为多晶硅制或者钨制。
在该方法的第一期间内,高频电力的接通和断开被周期性地切换。通过第一期间的高频电力的供给、即接通和断开交替切换的高频电力的供给,与生成低阶活性种相比从碳氟化合物主要生成高阶活性种。高阶活性种容易附着于掩模表面,在绝缘膜的蚀刻期间形成保护掩模的保护膜。此外,高阶活性种难以到达所形成的开口的深部,因此无法形成保护配线层的膜。
另一方面,在第二期间中,高频电力被设定成连续接通。通过第二期间的高频电力的供给、即连续维持接通状态的高频电力的供给,与生成高阶活性种相比从碳氟化合物主要生成低阶活性种。即,通过第二期间的高频电力的供给,与第一期间的高频电力的供给相比,碳氟化合物的离解度变高。低阶活性种能够较多地蚀刻掩模,但是能够到达开口的深部并在配线层上形成保护膜。因此,通过交替地反复执行第一步骤和第二步骤,能够在绝缘膜的蚀刻期间保护掩模和配线层。因此,根据本方法,能够相对于掩模和配线层对绝缘膜有选择地进行蚀刻。
在一实施方式中,绝缘膜可以为单一的膜。此外,在一实施方式中,第二期间能够为比在一周期内高频电力接通的期间长100倍以上的期间。
发明效果
如上所述,能够相对于掩模和配线层选择地蚀刻绝缘膜。
附图说明
图1是表示一实施方式涉及的蚀刻绝缘膜的方法的流程图。
图2是表示被处理体的一个例子的图。
图3是概略地表示一实施方式涉及的等离子体处理装置的图。
图4是表示图1所示的方法的各步骤中作为一个例子的被处理体的状态的截面图。
图5是图1所示的方法的各步骤中的高频电力和高频偏压电力的波形的图。
附图标记说明
10…等离子体处理装置;12…处理容器;PD…载置台;ESC…静电吸盘;LE…下部电极;30…上部电极;34…电极板;40…气体源组;42…阀门组;44…流量控制器组;50…排气装置;62…第一高频电源;64…第二高频电源;70…电源;Cnt…控制部;W…晶片;102…配线层;104…绝缘膜;106…掩模;108、110…保护膜。
具体实施方式
以下,参照附图对各种实施方式详细进行说明。此外,在各附图中对相同或相当的部分标注相同的附图标记。
图1是表示一实施方式涉及的蚀刻绝缘膜的方法的流程图。图1所示的方法MT为对被处理体(以下称为“晶片W”)的绝缘膜进行蚀刻的方法,包括交替反复进行的步骤S1和步骤S2。
图2是表示被处理体的一个例子的图。方法MT例如能够应用于图2所示的晶片W。该晶片W包括配线层102、绝缘膜104和掩模106。配线层102例如由多晶硅或钨构成。
绝缘膜104设置在配线层102上。在一实施方式中,绝缘膜104为单一的绝缘膜、即单层。此外,在一实施方式中,绝缘膜104为层间绝缘膜,例如由氧化硅构成。绝缘膜104只要是通过使用碳氟化合物气体的等离子体对配线层102和掩模106有选择地进行蚀刻的绝缘膜即可,能够由任意的材料构成。掩模106设置在绝缘膜104上。掩模106由有机膜构成。例如,掩模106由无定形碳或抗蚀剂材料(抗蚀材料)构成。在掩模106形成有要被转印于绝缘膜104的图案。即,在掩模106形成有开口。
方法MT的实施能够使用图3所示的等离子体处理装置。图3是概略地表示一实施方式涉及的等离子体处理装置的图。如图3所示,等离子体处理装置10为电容耦合型等离子体蚀刻装置,具备处理容器12。处理容器12具有大致圆筒形状。处理容器12例如由铝构成,对其内壁面实施了阳极氧化处理。该处理容器12进行安全接地。
在处理容器12的底部上设置有大致圆筒状的支承部14。支承部14例如由绝缘材料构成。支承部14在处理容器12内从处理容器12的底部沿着垂直方向延伸。此外,在处理容器12内设置有载置台PD。载置台PD由支承部14支承。
载置台PD在其上表面保持晶片W。载置台PD具有下部电极LE和静电吸盘ESC。下部电极LE包含第一板18a和第二板18b。第一板18a和第二板18b例如由铝等金属构成,呈大致圆盘形状。第二板18b设置在第一板18a上,与第一板18a电连接。
在第二板18b上设置有静电吸盘ESC。静电吸盘ESC具有将作为导电膜的电极配置在一对绝缘层或绝缘片之间的构造。静电吸盘ESC的电极经由开关23与直流电源22电连接。该静电吸盘ESC利用由来自直流电源22的直流电压产生的库仑力等静电力对晶片W进行吸附。由此,静电吸盘ESC能够保持晶片W。
在第二板18b的周缘部上以包围晶片W的边缘和静电吸盘ESC的方式配置有聚焦环FR。聚焦环FR是为了使蚀刻的均匀性提高而设置的。聚焦环FR由根据作为蚀刻对象的膜的材料而适当选择的材料构成,例如能够由石英构成。
在第二板18b的内部设置有制冷剂流路24。制冷剂流路24构成温度调节机构。制冷剂流路24从设置在处理容器12的外部的冷却(制冷)单元经由配管26a被供给制冷剂。被供给至制冷剂流路24的制冷剂经由配管26b返回至冷却单元。如上所述,制冷剂流路24以使制冷剂循环的方式被供给制冷剂。通过控制该制冷剂的温度,能够控制由静电吸盘ESC支承的晶片W的温度。
此外,在等离子体处理装置10设置有气体供给线路28。气体供给线路28将来自传热气体供给机构的传热气体例如He气供给到静电吸盘ESC的上表面和晶片W的背面之间。
此外,在等离子体处理装置10设置有作为加热元件的加热器HT。加热器HT例如嵌入在第二板18b内。加热器HT与加热器电源HP连接。通过从加热器电源HP向加热器HT供给电力,对载置台PD的温度进行调整,能够调整载置在该载置台PD上的晶片W的温度。此外,加热器HT可以内置于静电吸盘ESC。
此外,等离子体处理装置10具有上部电极30。上部电极30在载置台PD的上方与该载置台PD相对配置。下部电极LE和上部电极30彼此大致平行地设置。在该上部电极30和下部电极LE之间形成有用于对晶片W进行等离子体处理的处理空间S。
上部电极30隔着绝缘性屏蔽部件32支承在处理容器12的上部。在一实施方式中,上部电极30能够构成为距载置台PD的上表面、即晶片载置面的铅垂(垂直)方向上的距离可变。上部电极30能够包含电极板34和电极支承体36。电极板34与处理空间S相对,在该电极板34设置有多个气体排出孔34a。该电极板34在一实施方式中由硅构成。
电极支承体36是以装卸自如的方式支承电极板34的部件,例如能够由铝等导电性材料构成。该电极支承体36能够具有水冷构造。在电极支承体36的内部设置有气体扩散室36a。从该气体扩散室36a向下方延伸有与气体排出孔34a连通的多个气体通流孔36b。此外,在电极支承体36形成有向气体扩散室36a导入处理气体的气体导入口36c,该气体导入口36c与气体供给管38连接。
气体供给管38经由阀门组42和流量控制器组44与气体源组40连接。气体源组40具有多个气体源。多个气体源能够包含一种以上的碳氟化合物气体的源、氧气(O2气)的源、以及稀有气体的源。碳氟化合物气体能够为包含C4F6、C4F8和C6F6中的至少一种的气体。在一实施方式中,多个气体源能够包含C4F6气体的源和C4F8气体的源。此外,稀有气体能够为Ar气、He气等任意的稀有气体的源。
阀门组42包括多个阀门,流量控制器组44包括质量流量控制器等多个流量控制器。气体源组40的多个气体源分别经由阀门组42的对应的阀门和流量控制器组44的对应的流量控制器与气体供给管38连接。
此外,在等离子体处理装置10中,沿着处理容器12的内壁以装卸自如的方式设置有沉积物屏蔽件46。沉积物屏蔽件46也设置在支承部14的外周。沉积物屏蔽件46是用于防止蚀刻副生物(沉积物)附着在处理容器12上的部件,能够通过在铝材上覆盖Y2O3等陶瓷而构成。
在处理容器12的底部侧且在支承部14和处理容器12的侧壁之间设置有排气板48。排气板48例如能够通过在铝材上覆盖Y2O3等陶瓷而构成。在该排气板48的下方且在处理容器12设置有排气口12e。排气口12e经由排气管52与排气装置50连接。排气装置50具有涡轮分子泵等真空泵,能够将处理容器12内的空间减压至所期望的真空度。此外,在处理容器12的侧壁设置有晶片W的搬入搬出口12g,该搬入搬出口12g能够通过闸阀(gate valve)54开闭。
此外,等离子体处理装置10还具有第一高频电源62和第二高频电源64。第一高频电源62是产生等离子体生成用的第一高频电力的电源,产生27~100MHz的频率,在一个例子中为40MHz的高频电力。第一高频电源62经由匹配器66与下部电极LE连接。匹配器66是用于使第一高频电源62的输出阻抗和负载侧(下部电极LE侧)的输入阻抗匹配的电路。
第二高频电源64是产生用于将离子引入晶片W的第二高频电力、即高频偏压电力的电源,产生400kHz~13.56MHz范围内的频率,在一个例子中为3.2MHz的高频偏压电力。第二高频电源64经由匹配器68与下部电极LE连接。匹配器68是用于使第二高频电源64的输出阻抗与负载侧(下部电极LE侧)的输入阻抗匹配的电路。
此外,等离子体处理装置10还具备电源70。电源70与上部电极30连接。电源70对上部电极30施加用于将在处理空间S内存在的正离子引入到电极板34的电压。在一个例子中,电源70为产生负的直流电压的直流电源。在另一个例子中,电源70可以为产生频率比较低的交流电压的交流电源。从电源70施加到上部电极的电压能够为-150V以下的电压。即,由电源70施加到上部电极30的电压能够为绝对值在150V以上的负的电压。如果将这样的电压从电源70施加到上部电极30,则存在于处理空间S内的正离子与电极板34碰撞。由此,从电极板34释放出二次电子和/或硅。
此外,在一实施方式中,等离子体处理装置10还能够具有控制部Cnt。该控制部Cnt为具备处理器、存储部、输入装置、显示装置等的计算机,控制等离子体处理装置10的各部分。具体来讲,控制部Cnt与阀门组42、流量控制器组44、排气装置50、第一高频电源62、匹配器66、第二高频电源64、匹配器68、电源70、加热器电源HP和冷却单元连接。
控制部Cnt按照基于所输入的处理方案的程序进行动作,发送控制信号。根据来自控制部Cnt的控制信号,能够控制从气体源组供给的气体的选择和流量、排气装置50的排气、来自第一高频电源62和第二高频电源64的电力供给、来自电源70的电压施加、加热器电源HP的电力供给、来自冷却单元的制冷剂流量和制冷剂温度。
再次参照图1,与控制部Cnt的各种控制一起对方法MT的各步骤进行详细说明。此外,这里,除图1以外,还参照图4和图5。图4是表示方法MT的各步骤中作为一个例子的被处理体的状态的截面图。图5是表示方法MT的各步骤中的高频电力和高频偏压电力的波形的图。
在方法MT的步骤S1中,向处理容器12内供给包含碳氟化合物气体的处理气体。处理气体例如能够包含C4F6气体、C4F8气体、O2气和Ar气。此外,在方法MT中,在执行步骤S1的第一期间T1内,将从第一高频电源62供给的高频电力HF被周期性地切换为接通和断开。即,在第一期间T1内,高频电力HF以脉冲状被供给。高频电力HF的接通和断开的切换的频率为0.1kHz~100kHz的范围内的频率。例如该频率为10kHz。此外,在由该频率规定的一周期内,高频电力HF成为接通的期间T3所占的比例即占空比为5%~95%范围内的比。例如占空比为50%。
在一实施方式的步骤S1中,可以与高频电力HF的接通/断开同步地,将从第二高频电源64供给的高频偏压电力LF的接通和断开周期性地切换。即,在第一期间T1内,高频偏压电力LF可以以脉冲状被供给。
在该步骤S1中,利用脉冲状供给的高频电力HF,对处理气体进行激励。在基于脉冲状供给的高频电力HF生成的等离子体中,碳氟化合物以与F、CF、CF2等低阶活性种相比高阶活性种更多的方式发生离解(分解)。换言之,在步骤S1中,碳氟化合物的离解度比后述的步骤S2的碳氟化合物的离解度低。
如图4的(a)所示,高阶活性种容易附着在掩模106的表面,在利用氟或者碳氟化合物的活性种进行的绝缘膜104的蚀刻中,使保护掩模106的保护膜108形成在该掩模106的表面上。此外,高阶活性种具有难以到达通过蚀刻形成的开口OP的深部的特性。
在使用等离子体处理装置10执行该步骤S1的情况下,控制部Cnt控制阀门组42和流量控制器组44,将上述处理气体以设定的流量供给到处理容器12内。此外,控制部Cnt控制排气装置50,使得处理空间S的压力成为设定的压力。此外,控制部Cnt控制第一高频电源62和第二高频电源64,使得高频电力HF和高频偏压电力LF以脉冲状被供给。
此外,控制部Cnt也可以控制电源70,使得在高频电力HF为断开的期间内将来自电源70的电压施加到上部电极30。如果从电源70向上部电极30施加电压,则通过从电极板34释放出的二次电子将掩模106改性。由此,能够提高掩模106的耐等离子体性。此外,能够将晶片W的带电中和。由此,能够提高蚀刻率或蚀刻的直进性。
在方法MT中,在接着的步骤S2中,也向处理容器12内供给与步骤S1同样的处理气体。此外,在方法MT中,在执行步骤S2的第二期间T2内,从第一高频电源62供给的高频电力HF被设定成连续地接通。即,在第二期间T2中,连续地供给高频电力HF。第二期间T2在一实施方式中具有期间T3的100倍以上的时间长。例如第二期间T2能够设定为5秒~100秒范围内的时间长。此外,在一实施方式的步骤S2中,也能够与高频电力HF同样地连续供给从第二高频电源64供给来的高频偏压电力LF。
在该步骤S2中,利用连续供给的高频电力HF,对处理气体进行激励。在基于连续供给的高频电力HF生成的等离子体中,碳氟化合物以使F、CF、CF2等低阶活性种比高阶活性种多的方式发生离解。换言之,在步骤S2中,碳氟化合物的离解度比步骤S1的碳氟化合物的离解度高。
如图4(b)所示,低阶活性种能够较多地蚀刻掩模106,但是能够到达至开口OP的深部,并在配线层102上形成保护膜110。因此,根据步骤S2,能够抑制配线层102的蚀刻。
在使用等离子体处理装置10执行该步骤S2的情况下,控制部Cnt控制阀门组42和流量控制器组44,使得上述处理气体以设定的流量被供给到处理容器12内。此外,控制部Cnt控制排气装置50,使得处理空间S的压力成为被设定的压力。此外,控制部Cnt控制第一高频电源62和第二高频电源64,使得高频电力HF和高频偏压电力LF被连续供给。此外,控制部Cnt可以控制电源70,使得在第二期间T2中来自电源70的电压被施加到上部电极30。
在方法MT中,在接下来的步骤S3中,判断是否满足停止条件。停止条件例如在包含步骤S1和步骤S2的序列的执行次数达到规定次数时满足。例如规定次数为10次。在步骤S3的判断结果为否(No)的情况下,再次反复执行步骤S1和步骤S2。另一方面,在步骤S3的判断结果为是(Yes)的情况下,方法MT的处理结束。
根据以上说明的方法MT,通过交替反复执行步骤S1和步骤S2,能够在绝缘膜104的蚀刻期间在掩模106和配线层102双方之上形成保护膜。因此,根据该方法MT,能够相对于掩模106和配线层102对绝缘膜104有选择地进行蚀刻。
以上,对各种实施方式进行了说明,但是不限于上述的实施方式,而能够构成各种变形方式。例如第一高频电源62也可以经由匹配器66与上部电极30连接。
Claims (5)
1.一种蚀刻方法,其用于对被处理体的绝缘膜进行蚀刻,该被处理体包括配线层、设置在该配线层上的所述绝缘膜和设置在所述绝缘膜上的由有机膜构成的掩模,所述蚀刻方法的特征在于,包括:
在第一期间内,为了激励被供给到等离子体处理装置的处理容器内的包含碳氟化合物的处理气体,周期性地切换高频电力的接通和断开的步骤;和
在接着所述第一期间之后的第二期间,为了激励被供给到所述处理容器内的所述处理气体,将高频电力设定为连续接通的步骤,其中,该第二期间内所述高频电力接通的时间比所述第一期间内在由所述高频电力接通的期间和所述高频电力断开的期间构成的一周期内所述高频电力接通的时间长,
交替地反复进行所述周期性地切换所述高频电力的接通和断开的步骤和所述将所述高频电力设定为连续接通的步骤。
2.如权利要求1所述的蚀刻方法,其特征在于:
所述绝缘膜为单一的膜。
3.如权利要求1或2所述的蚀刻方法,其特征在于:
所述第二期间为比在所述一周期内所述高频电力接通的所述期间长100倍以上的期间。
4.如权利要求1或2所述的蚀刻方法,其特征在于:
在所述将所述高频电力设定为连续接通的步骤中,与所述周期性地切换所述高频电力的接通和断开的步骤相比,碳氟化合物的离解度更高。
5.如权利要求3所述的蚀刻方法,其特征在于:
在所述将所述高频电力设定为连续接通的步骤中,与所述周期性地切换所述高频电力的接通和断开的步骤相比,碳氟化合物的离解度更高。
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JP6315809B2 (ja) | 2014-08-28 | 2018-04-25 | 東京エレクトロン株式会社 | エッチング方法 |
JP6410592B2 (ja) * | 2014-12-18 | 2018-10-24 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
JP6568822B2 (ja) * | 2016-05-16 | 2019-08-28 | 東京エレクトロン株式会社 | エッチング方法 |
JP6811202B2 (ja) * | 2018-04-17 | 2021-01-13 | 東京エレクトロン株式会社 | エッチングする方法及びプラズマ処理装置 |
JP6846387B2 (ja) * | 2018-06-22 | 2021-03-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
FR3091410B1 (fr) * | 2018-12-26 | 2021-01-15 | St Microelectronics Crolles 2 Sas | Procédé de gravure |
JP7433095B2 (ja) | 2020-03-18 | 2024-02-19 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
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CN101800161A (zh) * | 2009-01-26 | 2010-08-11 | 东京毅力科创株式会社 | 等离子体蚀刻方法和等离子体蚀刻装置 |
CN102263026A (zh) * | 2004-06-21 | 2011-11-30 | 东京毅力科创株式会社 | 等离子体处理装置和方法 |
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JP3559429B2 (ja) * | 1997-07-02 | 2004-09-02 | 松下電器産業株式会社 | プラズマ処理方法 |
US6589437B1 (en) * | 1999-03-05 | 2003-07-08 | Applied Materials, Inc. | Active species control with time-modulated plasma |
KR100317915B1 (ko) | 1999-03-22 | 2001-12-22 | 윤종용 | 플라즈마 식각 장치 |
ATE420454T1 (de) * | 1999-08-17 | 2009-01-15 | Tokyo Electron Ltd | Gepulstes plasmabehandlungsverfahren und vorrichtung |
US6916746B1 (en) * | 2003-04-09 | 2005-07-12 | Lam Research Corporation | Method for plasma etching using periodic modulation of gas chemistry |
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US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
JP2012142495A (ja) | 2011-01-05 | 2012-07-26 | Ulvac Japan Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
JP5804978B2 (ja) * | 2011-03-03 | 2015-11-04 | 東京エレクトロン株式会社 | プラズマエッチング方法及びコンピュータ記録媒体 |
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CN101523569A (zh) * | 2006-10-06 | 2009-09-02 | 东京毅力科创株式会社 | 等离子体蚀刻装置和等离子体蚀刻方法 |
CN101800161A (zh) * | 2009-01-26 | 2010-08-11 | 东京毅力科创株式会社 | 等离子体蚀刻方法和等离子体蚀刻装置 |
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CN105304484A (zh) | 2016-02-03 |
US20150371830A1 (en) | 2015-12-24 |
KR101799149B1 (ko) | 2017-11-17 |
US9312105B2 (en) | 2016-04-12 |
SG10201504420RA (en) | 2016-01-28 |
TW201611117A (zh) | 2016-03-16 |
JP6327970B2 (ja) | 2018-05-23 |
TWI632606B (zh) | 2018-08-11 |
KR20150146394A (ko) | 2015-12-31 |
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