TWI632011B - 雷射處理方法以及雷射處理裝置 - Google Patents

雷射處理方法以及雷射處理裝置 Download PDF

Info

Publication number
TWI632011B
TWI632011B TW102140957A TW102140957A TWI632011B TW I632011 B TWI632011 B TW I632011B TW 102140957 A TW102140957 A TW 102140957A TW 102140957 A TW102140957 A TW 102140957A TW I632011 B TWI632011 B TW I632011B
Authority
TW
Taiwan
Prior art keywords
laser
semiconductor film
scanning
pulsed laser
irradiation
Prior art date
Application number
TW102140957A
Other languages
English (en)
Chinese (zh)
Other versions
TW201424903A (zh
Inventor
次田純一
町田政志
鄭石煥
Original Assignee
日本製鋼所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本製鋼所股份有限公司 filed Critical 日本製鋼所股份有限公司
Publication of TW201424903A publication Critical patent/TW201424903A/zh
Application granted granted Critical
Publication of TWI632011B publication Critical patent/TWI632011B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686Pulsed laser beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02373Group 14 semiconducting materials
    • H01L21/02381Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691Scanning of a beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
TW102140957A 2012-11-20 2013-11-12 雷射處理方法以及雷射處理裝置 TWI632011B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012254284A JP5788855B2 (ja) 2012-11-20 2012-11-20 レーザ処理方法およびレーザ処理装置
JP2012-254284 2012-11-20

Publications (2)

Publication Number Publication Date
TW201424903A TW201424903A (zh) 2014-07-01
TWI632011B true TWI632011B (zh) 2018-08-11

Family

ID=50775915

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102140957A TWI632011B (zh) 2012-11-20 2013-11-12 雷射處理方法以及雷射處理裝置

Country Status (6)

Country Link
JP (1) JP5788855B2 (ja)
KR (1) KR102108029B1 (ja)
CN (1) CN104838472B (ja)
SG (1) SG11201503919QA (ja)
TW (1) TWI632011B (ja)
WO (1) WO2014080728A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102531651B1 (ko) * 2016-01-06 2023-05-11 삼성디스플레이 주식회사 레이저 결정화 장치
JP6687497B2 (ja) * 2016-10-20 2020-04-22 株式会社日本製鋼所 結晶半導体膜製造方法、結晶半導体膜製造装置および結晶半導体膜製造装置の制御方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1137171A (zh) * 1995-02-02 1996-12-04 株式会社半导体能源研究所 激光退火方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130510A (ja) * 1985-12-02 1987-06-12 Agency Of Ind Science & Technol 半導体基体の製造方法
JP2748377B2 (ja) * 1987-11-12 1998-05-06 富士通株式会社 複数ビームによるレーザ再結晶法
JP4357006B2 (ja) * 1995-08-03 2009-11-04 東芝モバイルディスプレイ株式会社 多結晶半導体薄膜の形成方法及び薄膜トランジスタの製造方法
JPH09321311A (ja) * 1996-05-24 1997-12-12 Sony Corp 薄膜半導体装置の製造方法
JPH1074697A (ja) * 1996-08-29 1998-03-17 Toshiba Corp 多結晶シリコン膜、多結晶シリコンの製造方法、薄膜トランジスタの製造方法、液晶表示装置の製造方法、及びレーザアニール装置
JP2002083769A (ja) * 2000-09-05 2002-03-22 Sony Corp 半導体薄膜及び半導体薄膜の製造方法
JP2005040806A (ja) * 2003-07-24 2005-02-17 Daihen Corp 亜鉛メッキ鋼板のレーザ照射アーク溶接方法
US8927898B2 (en) * 2006-05-01 2015-01-06 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
JP4919717B2 (ja) * 2006-07-07 2012-04-18 三菱電機株式会社 多結晶シリコン膜の製造方法
US20080030877A1 (en) * 2006-08-07 2008-02-07 Tcz Gmbh Systems and methods for optimizing the crystallization of amorphous silicon
JP2008311494A (ja) * 2007-06-15 2008-12-25 Sharp Corp 結晶性半導体膜の製造方法、及び、レーザー装置
JP2013510443A (ja) * 2009-11-03 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 非周期的なパルスによる部分的溶解膜処理のシステムおよび方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1137171A (zh) * 1995-02-02 1996-12-04 株式会社半导体能源研究所 激光退火方法

Also Published As

Publication number Publication date
WO2014080728A1 (ja) 2014-05-30
TW201424903A (zh) 2014-07-01
KR102108029B1 (ko) 2020-05-07
CN104838472B (zh) 2018-03-20
KR20150087196A (ko) 2015-07-29
SG11201503919QA (en) 2015-06-29
JP5788855B2 (ja) 2015-10-07
JP2014103248A (ja) 2014-06-05
CN104838472A (zh) 2015-08-12

Similar Documents

Publication Publication Date Title
KR101407143B1 (ko) 박막의 라인 스캔 순차적 횡방향 고형화
TWI364066B (ja)
JP2006237525A (ja) レーザ照射方法及び装置
JP5682839B2 (ja) レーザアニール方法及び装置
US20080293258A1 (en) Crystallization apparatus and crystallization method
US20070002308A1 (en) Method of and apparatus for in-situ monitoring of crystallization state
JP4961897B2 (ja) レーザー照射装置、レーザー照射方法、薄膜半導体装置の製造方法、及び表示装置の製造方法
TWI632011B (zh) 雷射處理方法以及雷射處理裝置
KR100674061B1 (ko) 반도체 소자 및 제조 방법
US7157677B2 (en) Method of picking up sectional image of laser light
KR102108028B1 (ko) 레이저 어닐링 방법 및 레이저 어닐링 장치
KR101810062B1 (ko) 레이저 결정화 장치 및 레이저 결정화 방법
TW202022363A (zh) 雷射晶化裝置的監控系統
TWI582833B (zh) 結晶半導體膜之製造方法以及製造裝置
JP5999694B2 (ja) レーザアニール方法および装置
JP2010153876A (ja) 半導体薄膜の改質方法、改質した半導体薄膜とその評価方法、およびこの半導体薄膜で形成した薄膜トランジスタ、並びにこの薄膜トランジスタを用いて構成した回路を有する画像表示装置
JP2010135850A (ja) 微結晶化判定方法及び装置
JP2006093662A (ja) レ−ザ光の断面像の撮像方法及び方法
JP2006165176A (ja) 光強度分布の測定方法、測定装置、光強度分布の可視化方法、光強度分布の可視化装置、結晶化装置および結晶化方法
JP2005347574A (ja) 半導体の製造方法および半導体の膜厚測定方法