TWI632011B - 雷射處理方法以及雷射處理裝置 - Google Patents

雷射處理方法以及雷射處理裝置 Download PDF

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Publication number
TWI632011B
TWI632011B TW102140957A TW102140957A TWI632011B TW I632011 B TWI632011 B TW I632011B TW 102140957 A TW102140957 A TW 102140957A TW 102140957 A TW102140957 A TW 102140957A TW I632011 B TWI632011 B TW I632011B
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TW
Taiwan
Prior art keywords
laser
semiconductor film
scanning
pulsed laser
irradiation
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TW102140957A
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English (en)
Chinese (zh)
Other versions
TW201424903A (zh
Inventor
次田純一
町田政志
鄭石煥
Original Assignee
日本製鋼所股份有限公司
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Application filed by 日本製鋼所股份有限公司 filed Critical 日本製鋼所股份有限公司
Publication of TW201424903A publication Critical patent/TW201424903A/zh
Application granted granted Critical
Publication of TWI632011B publication Critical patent/TWI632011B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
TW102140957A 2012-11-20 2013-11-12 雷射處理方法以及雷射處理裝置 TWI632011B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012254284A JP5788855B2 (ja) 2012-11-20 2012-11-20 レーザ処理方法およびレーザ処理装置
JP2012-254284 2012-11-20

Publications (2)

Publication Number Publication Date
TW201424903A TW201424903A (zh) 2014-07-01
TWI632011B true TWI632011B (zh) 2018-08-11

Family

ID=50775915

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102140957A TWI632011B (zh) 2012-11-20 2013-11-12 雷射處理方法以及雷射處理裝置

Country Status (6)

Country Link
JP (1) JP5788855B2 (ja)
KR (1) KR102108029B1 (ja)
CN (1) CN104838472B (ja)
SG (1) SG11201503919QA (ja)
TW (1) TWI632011B (ja)
WO (1) WO2014080728A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102531651B1 (ko) * 2016-01-06 2023-05-11 삼성디스플레이 주식회사 레이저 결정화 장치
JP6687497B2 (ja) * 2016-10-20 2020-04-22 株式会社日本製鋼所 結晶半導体膜製造方法、結晶半導体膜製造装置および結晶半導体膜製造装置の制御方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1137171A (zh) * 1995-02-02 1996-12-04 株式会社半导体能源研究所 激光退火方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130510A (ja) * 1985-12-02 1987-06-12 Agency Of Ind Science & Technol 半導体基体の製造方法
JP2748377B2 (ja) * 1987-11-12 1998-05-06 富士通株式会社 複数ビームによるレーザ再結晶法
JP4357006B2 (ja) * 1995-08-03 2009-11-04 東芝モバイルディスプレイ株式会社 多結晶半導体薄膜の形成方法及び薄膜トランジスタの製造方法
JPH09321311A (ja) * 1996-05-24 1997-12-12 Sony Corp 薄膜半導体装置の製造方法
JPH1074697A (ja) * 1996-08-29 1998-03-17 Toshiba Corp 多結晶シリコン膜、多結晶シリコンの製造方法、薄膜トランジスタの製造方法、液晶表示装置の製造方法、及びレーザアニール装置
JP2002083769A (ja) * 2000-09-05 2002-03-22 Sony Corp 半導体薄膜及び半導体薄膜の製造方法
JP2005040806A (ja) * 2003-07-24 2005-02-17 Daihen Corp 亜鉛メッキ鋼板のレーザ照射アーク溶接方法
US8927898B2 (en) * 2006-05-01 2015-01-06 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
JP4919717B2 (ja) * 2006-07-07 2012-04-18 三菱電機株式会社 多結晶シリコン膜の製造方法
US20080030877A1 (en) * 2006-08-07 2008-02-07 Tcz Gmbh Systems and methods for optimizing the crystallization of amorphous silicon
JP2008311494A (ja) * 2007-06-15 2008-12-25 Sharp Corp 結晶性半導体膜の製造方法、及び、レーザー装置
JP2013510443A (ja) * 2009-11-03 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 非周期的なパルスによる部分的溶解膜処理のシステムおよび方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1137171A (zh) * 1995-02-02 1996-12-04 株式会社半导体能源研究所 激光退火方法

Also Published As

Publication number Publication date
WO2014080728A1 (ja) 2014-05-30
TW201424903A (zh) 2014-07-01
KR102108029B1 (ko) 2020-05-07
CN104838472B (zh) 2018-03-20
KR20150087196A (ko) 2015-07-29
SG11201503919QA (en) 2015-06-29
JP5788855B2 (ja) 2015-10-07
JP2014103248A (ja) 2014-06-05
CN104838472A (zh) 2015-08-12

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