TWI632011B - 雷射處理方法以及雷射處理裝置 - Google Patents
雷射處理方法以及雷射處理裝置 Download PDFInfo
- Publication number
- TWI632011B TWI632011B TW102140957A TW102140957A TWI632011B TW I632011 B TWI632011 B TW I632011B TW 102140957 A TW102140957 A TW 102140957A TW 102140957 A TW102140957 A TW 102140957A TW I632011 B TWI632011 B TW I632011B
- Authority
- TW
- Taiwan
- Prior art keywords
- laser
- semiconductor film
- scanning
- pulsed laser
- irradiation
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 238000012545 processing Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 14
- 238000002425 crystallisation Methods 0.000 claims description 10
- 230000008025 crystallization Effects 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000002411 adverse Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 70
- 239000011295 pitch Substances 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 230000007423 decrease Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000005496 tempering Methods 0.000 description 9
- 230000010355 oscillation Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012254284A JP5788855B2 (ja) | 2012-11-20 | 2012-11-20 | レーザ処理方法およびレーザ処理装置 |
JP2012-254284 | 2012-11-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201424903A TW201424903A (zh) | 2014-07-01 |
TWI632011B true TWI632011B (zh) | 2018-08-11 |
Family
ID=50775915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102140957A TWI632011B (zh) | 2012-11-20 | 2013-11-12 | 雷射處理方法以及雷射處理裝置 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP5788855B2 (ja) |
KR (1) | KR102108029B1 (ja) |
CN (1) | CN104838472B (ja) |
SG (1) | SG11201503919QA (ja) |
TW (1) | TWI632011B (ja) |
WO (1) | WO2014080728A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102531651B1 (ko) * | 2016-01-06 | 2023-05-11 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
JP6687497B2 (ja) * | 2016-10-20 | 2020-04-22 | 株式会社日本製鋼所 | 結晶半導体膜製造方法、結晶半導体膜製造装置および結晶半導体膜製造装置の制御方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1137171A (zh) * | 1995-02-02 | 1996-12-04 | 株式会社半导体能源研究所 | 激光退火方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62130510A (ja) * | 1985-12-02 | 1987-06-12 | Agency Of Ind Science & Technol | 半導体基体の製造方法 |
JP2748377B2 (ja) * | 1987-11-12 | 1998-05-06 | 富士通株式会社 | 複数ビームによるレーザ再結晶法 |
JP4357006B2 (ja) * | 1995-08-03 | 2009-11-04 | 東芝モバイルディスプレイ株式会社 | 多結晶半導体薄膜の形成方法及び薄膜トランジスタの製造方法 |
JPH09321311A (ja) * | 1996-05-24 | 1997-12-12 | Sony Corp | 薄膜半導体装置の製造方法 |
JPH1074697A (ja) * | 1996-08-29 | 1998-03-17 | Toshiba Corp | 多結晶シリコン膜、多結晶シリコンの製造方法、薄膜トランジスタの製造方法、液晶表示装置の製造方法、及びレーザアニール装置 |
JP2002083769A (ja) * | 2000-09-05 | 2002-03-22 | Sony Corp | 半導体薄膜及び半導体薄膜の製造方法 |
JP2005040806A (ja) * | 2003-07-24 | 2005-02-17 | Daihen Corp | 亜鉛メッキ鋼板のレーザ照射アーク溶接方法 |
US8927898B2 (en) * | 2006-05-01 | 2015-01-06 | Tcz, Llc | Systems and method for optimization of laser beam spatial intensity profile |
JP4919717B2 (ja) * | 2006-07-07 | 2012-04-18 | 三菱電機株式会社 | 多結晶シリコン膜の製造方法 |
US20080030877A1 (en) * | 2006-08-07 | 2008-02-07 | Tcz Gmbh | Systems and methods for optimizing the crystallization of amorphous silicon |
JP2008311494A (ja) * | 2007-06-15 | 2008-12-25 | Sharp Corp | 結晶性半導体膜の製造方法、及び、レーザー装置 |
JP2013510443A (ja) * | 2009-11-03 | 2013-03-21 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 非周期的なパルスによる部分的溶解膜処理のシステムおよび方法 |
-
2012
- 2012-11-20 JP JP2012254284A patent/JP5788855B2/ja not_active Expired - Fee Related
-
2013
- 2013-10-29 CN CN201380060409.6A patent/CN104838472B/zh not_active Expired - Fee Related
- 2013-10-29 WO PCT/JP2013/079232 patent/WO2014080728A1/ja active Application Filing
- 2013-10-29 KR KR1020157010539A patent/KR102108029B1/ko active IP Right Grant
- 2013-10-29 SG SG11201503919QA patent/SG11201503919QA/en unknown
- 2013-11-12 TW TW102140957A patent/TWI632011B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1137171A (zh) * | 1995-02-02 | 1996-12-04 | 株式会社半导体能源研究所 | 激光退火方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2014080728A1 (ja) | 2014-05-30 |
TW201424903A (zh) | 2014-07-01 |
KR102108029B1 (ko) | 2020-05-07 |
CN104838472B (zh) | 2018-03-20 |
KR20150087196A (ko) | 2015-07-29 |
SG11201503919QA (en) | 2015-06-29 |
JP5788855B2 (ja) | 2015-10-07 |
JP2014103248A (ja) | 2014-06-05 |
CN104838472A (zh) | 2015-08-12 |
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