SG11201503919QA - Laser processing method and laser processing apparatus - Google Patents

Laser processing method and laser processing apparatus

Info

Publication number
SG11201503919QA
SG11201503919QA SG11201503919QA SG11201503919QA SG11201503919QA SG 11201503919Q A SG11201503919Q A SG 11201503919QA SG 11201503919Q A SG11201503919Q A SG 11201503919QA SG 11201503919Q A SG11201503919Q A SG 11201503919QA SG 11201503919Q A SG11201503919Q A SG 11201503919QA
Authority
SG
Singapore
Prior art keywords
laser processing
processing apparatus
processing method
laser
processing
Prior art date
Application number
SG11201503919QA
Other languages
English (en)
Inventor
Junichi Shida
Masashi Machida
Suk-Hwan Chung
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Publication of SG11201503919QA publication Critical patent/SG11201503919QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
SG11201503919QA 2012-11-20 2013-10-29 Laser processing method and laser processing apparatus SG11201503919QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012254284A JP5788855B2 (ja) 2012-11-20 2012-11-20 レーザ処理方法およびレーザ処理装置
PCT/JP2013/079232 WO2014080728A1 (ja) 2012-11-20 2013-10-29 レーザ処理方法およびレーザ処理装置

Publications (1)

Publication Number Publication Date
SG11201503919QA true SG11201503919QA (en) 2015-06-29

Family

ID=50775915

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201503919QA SG11201503919QA (en) 2012-11-20 2013-10-29 Laser processing method and laser processing apparatus

Country Status (6)

Country Link
JP (1) JP5788855B2 (ja)
KR (1) KR102108029B1 (ja)
CN (1) CN104838472B (ja)
SG (1) SG11201503919QA (ja)
TW (1) TWI632011B (ja)
WO (1) WO2014080728A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102531651B1 (ko) * 2016-01-06 2023-05-11 삼성디스플레이 주식회사 레이저 결정화 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130510A (ja) * 1985-12-02 1987-06-12 Agency Of Ind Science & Technol 半導体基体の製造方法
JP2748377B2 (ja) * 1987-11-12 1998-05-06 富士通株式会社 複数ビームによるレーザ再結晶法
TW305063B (ja) * 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
JP4357006B2 (ja) * 1995-08-03 2009-11-04 東芝モバイルディスプレイ株式会社 多結晶半導体薄膜の形成方法及び薄膜トランジスタの製造方法
JPH09321311A (ja) * 1996-05-24 1997-12-12 Sony Corp 薄膜半導体装置の製造方法
JPH1074697A (ja) * 1996-08-29 1998-03-17 Toshiba Corp 多結晶シリコン膜、多結晶シリコンの製造方法、薄膜トランジスタの製造方法、液晶表示装置の製造方法、及びレーザアニール装置
JP2002083769A (ja) * 2000-09-05 2002-03-22 Sony Corp 半導体薄膜及び半導体薄膜の製造方法
JP2005040806A (ja) * 2003-07-24 2005-02-17 Daihen Corp 亜鉛メッキ鋼板のレーザ照射アーク溶接方法
US8927898B2 (en) * 2006-05-01 2015-01-06 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
JP4919717B2 (ja) * 2006-07-07 2012-04-18 三菱電機株式会社 多結晶シリコン膜の製造方法
US20080030877A1 (en) * 2006-08-07 2008-02-07 Tcz Gmbh Systems and methods for optimizing the crystallization of amorphous silicon
JP2008311494A (ja) * 2007-06-15 2008-12-25 Sharp Corp 結晶性半導体膜の製造方法、及び、レーザー装置
JP2013510443A (ja) * 2009-11-03 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 非周期的なパルスによる部分的溶解膜処理のシステムおよび方法

Also Published As

Publication number Publication date
CN104838472B (zh) 2018-03-20
CN104838472A (zh) 2015-08-12
JP2014103248A (ja) 2014-06-05
JP5788855B2 (ja) 2015-10-07
TW201424903A (zh) 2014-07-01
KR20150087196A (ko) 2015-07-29
KR102108029B1 (ko) 2020-05-07
TWI632011B (zh) 2018-08-11
WO2014080728A1 (ja) 2014-05-30

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