TWI631685B - 緊密靜電放電保護結構 - Google Patents
緊密靜電放電保護結構 Download PDFInfo
- Publication number
- TWI631685B TWI631685B TW103115860A TW103115860A TWI631685B TW I631685 B TWI631685 B TW I631685B TW 103115860 A TW103115860 A TW 103115860A TW 103115860 A TW103115860 A TW 103115860A TW I631685 B TWI631685 B TW I631685B
- Authority
- TW
- Taiwan
- Prior art keywords
- diode
- coupled
- field effect
- protection device
- integrated circuit
- Prior art date
Links
- 230000005669 field effect Effects 0.000 claims abstract description 35
- 230000001939 inductive effect Effects 0.000 claims abstract description 6
- 239000003990 capacitor Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000000605 extraction Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
Landscapes
- Junction Field-Effect Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361819252P | 2013-05-03 | 2013-05-03 | |
| US61/819,252 | 2013-05-03 | ||
| US14/267,185 | 2014-05-01 | ||
| US14/267,185 US9431390B2 (en) | 2013-05-03 | 2014-05-01 | Compact electrostatic discharge (ESD) protection structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201508894A TW201508894A (zh) | 2015-03-01 |
| TWI631685B true TWI631685B (zh) | 2018-08-01 |
Family
ID=51841005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103115860A TWI631685B (zh) | 2013-05-03 | 2014-05-02 | 緊密靜電放電保護結構 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US9431390B2 (enrdf_load_stackoverflow) |
| EP (1) | EP2992555B1 (enrdf_load_stackoverflow) |
| JP (1) | JP6366687B2 (enrdf_load_stackoverflow) |
| KR (1) | KR102198021B1 (enrdf_load_stackoverflow) |
| CN (1) | CN105190887B (enrdf_load_stackoverflow) |
| TW (1) | TWI631685B (enrdf_load_stackoverflow) |
| WO (1) | WO2014179651A1 (enrdf_load_stackoverflow) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9728532B2 (en) * | 2011-04-13 | 2017-08-08 | Qorvo Us, Inc. | Clamp based ESD protection circuits |
| US9627883B2 (en) | 2011-04-13 | 2017-04-18 | Qorvo Us, Inc. | Multiple port RF switch ESD protection using single protection structure |
| US9431390B2 (en) * | 2013-05-03 | 2016-08-30 | Microchip Technology Incorporated | Compact electrostatic discharge (ESD) protection structure |
| KR20150048427A (ko) * | 2013-10-28 | 2015-05-07 | 에스케이하이닉스 주식회사 | 디스차지 회로 |
| US10610326B2 (en) | 2015-06-05 | 2020-04-07 | Cianna Medical, Inc. | Passive tags, and systems and methods for using them |
| KR102364340B1 (ko) * | 2015-06-30 | 2022-02-17 | 엘지디스플레이 주식회사 | 표시장치 |
| JP6597357B2 (ja) * | 2016-02-09 | 2019-10-30 | 三菱電機株式会社 | 保護ダイオード付き電界効果トランジスタ |
| US10158029B2 (en) * | 2016-02-23 | 2018-12-18 | Analog Devices, Inc. | Apparatus and methods for robust overstress protection in compound semiconductor circuit applications |
| US10827949B2 (en) | 2016-04-06 | 2020-11-10 | Cianna Medical, Inc. | Reflector markers and systems and methods for identifying and locating them |
| ES2971276T3 (es) | 2016-04-06 | 2024-06-04 | Cianna Medical Inc | Marcadores reflectantes y sistemas para identificarlos y localizarlos |
| US20180026029A1 (en) * | 2016-07-21 | 2018-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated ESD Protection Circuit for GaN Based Device |
| US10438940B2 (en) * | 2016-12-29 | 2019-10-08 | Nxp Usa, Inc. | ESD protection for depletion-mode devices |
| US10475783B2 (en) * | 2017-10-13 | 2019-11-12 | Nxp B.V. | Electrostatic discharge protection apparatuses |
| US10381828B1 (en) * | 2018-01-29 | 2019-08-13 | Dialog Semiconductor (Uk) Limited | Overvoltage protection of transistor devices |
| US11883150B2 (en) | 2018-09-06 | 2024-01-30 | Cianna Medical, Inc. | Systems for identifying and locating reflectors using orthogonal sequences of reflector switching |
| GB2580155A (en) * | 2018-12-21 | 2020-07-15 | Comet Ag | Radiofrequency power amplifier |
| CN111756028B (zh) * | 2019-03-29 | 2022-07-01 | 北京小米移动软件有限公司 | 电子设备 |
| CN110137172B (zh) * | 2019-05-15 | 2021-12-10 | 英诺赛科（珠海）科技有限公司 | 静电防护电路及电子装置 |
| WO2021092032A1 (en) | 2019-11-05 | 2021-05-14 | Cianna Medical, Inc. | Systems and methods for imaging a body region using implanted markers |
| US11309435B2 (en) * | 2020-03-09 | 2022-04-19 | Globalfoundries U.S. Inc. | Bandgap reference circuit including vertically stacked active SOI devices |
| US11764204B2 (en) * | 2020-06-18 | 2023-09-19 | Analog Devices, Inc. | Electrostatic discharge and overdrive protection circuitry |
| KR20220004487A (ko) * | 2020-07-03 | 2022-01-11 | 에스케이하이닉스 시스템아이씨 주식회사 | 낮은 트리거 전압을 갖는 정전기 방전 보호 소자 |
| CN117043837A (zh) | 2021-07-20 | 2023-11-10 | 三星电子株式会社 | 包括显示模块的显示装置及其制造方法 |
| CN114551410A (zh) * | 2022-02-23 | 2022-05-27 | 深圳市时代速信科技有限公司 | 半导体器件及其制备方法 |
| CN117239685A (zh) * | 2022-06-08 | 2023-12-15 | 长鑫存储技术有限公司 | 静电保护结构、可控硅整流器和半导体存储器 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200812059A (en) * | 2006-08-23 | 2008-03-01 | Win Semiconductors Corp | On-chip ESD protection circuit using enhancement-mode HEMT/MESFET technology |
| TW200908812A (en) * | 2007-04-19 | 2009-02-16 | Qualcomm Inc | Stacked ESD protection circuit having reduced trigger voltage |
| TW201433036A (zh) * | 2013-02-15 | 2014-08-16 | Win Semiconductors Corp | 具有靜電保護元件之積體電路 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6826025B2 (en) * | 2002-05-20 | 2004-11-30 | International Business Machines Corporation | Method and apparatus for providing ESD protection and/or noise reduction in an integrated circuit |
| US6835969B1 (en) * | 2003-06-26 | 2004-12-28 | Raytheon Company | Split-channel high electron mobility transistor (HEMT) device |
| US6984853B2 (en) | 2004-02-26 | 2006-01-10 | Agilent Technologies, Inc | Integrated circuit with enhancement mode pseudomorphic high electron mobility transistors having on-chip electrostatic discharge protection |
| JP2006165182A (ja) * | 2004-12-06 | 2006-06-22 | Toshiba Corp | 電界効果トランジスタ |
| KR100818086B1 (ko) * | 2006-04-06 | 2008-03-31 | 주식회사 하이닉스반도체 | 정전기 방전 보호 회로 |
| US7593204B1 (en) | 2006-06-06 | 2009-09-22 | Rf Micro Devices, Inc. | On-chip ESD protection circuit for radio frequency (RF) integrated circuits |
| US8144441B2 (en) * | 2006-08-30 | 2012-03-27 | Triquint Semiconductor, Inc. | Electrostatic discharge protection circuit for compound semiconductor devices and circuits |
| US7881029B1 (en) | 2008-07-07 | 2011-02-01 | Rf Micro Devices, Inc. | Depletion-mode field effect transistor based electrostatic discharge protection circuit |
| US9171963B2 (en) | 2011-04-11 | 2015-10-27 | University Of Central Florida Research Foundation, Inc. | Electrostatic discharge shunting circuit |
| US9728532B2 (en) | 2011-04-13 | 2017-08-08 | Qorvo Us, Inc. | Clamp based ESD protection circuits |
| US8970998B2 (en) * | 2012-12-31 | 2015-03-03 | Win Semiconductors Corp. | Compound semiconductor ESD protection devices |
| US9431390B2 (en) * | 2013-05-03 | 2016-08-30 | Microchip Technology Incorporated | Compact electrostatic discharge (ESD) protection structure |
-
2014
- 2014-05-01 US US14/267,185 patent/US9431390B2/en active Active
- 2014-05-02 CN CN201480025014.7A patent/CN105190887B/zh active Active
- 2014-05-02 TW TW103115860A patent/TWI631685B/zh active
- 2014-05-02 EP EP14728389.9A patent/EP2992555B1/en active Active
- 2014-05-02 JP JP2016512060A patent/JP6366687B2/ja active Active
- 2014-05-02 WO PCT/US2014/036499 patent/WO2014179651A1/en active Application Filing
- 2014-05-02 KR KR1020157031623A patent/KR102198021B1/ko active Active
-
2016
- 2016-08-29 US US15/250,855 patent/US9685432B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200812059A (en) * | 2006-08-23 | 2008-03-01 | Win Semiconductors Corp | On-chip ESD protection circuit using enhancement-mode HEMT/MESFET technology |
| TW200908812A (en) * | 2007-04-19 | 2009-02-16 | Qualcomm Inc | Stacked ESD protection circuit having reduced trigger voltage |
| TW201433036A (zh) * | 2013-02-15 | 2014-08-16 | Win Semiconductors Corp | 具有靜電保護元件之積體電路 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2992555A1 (en) | 2016-03-09 |
| US9431390B2 (en) | 2016-08-30 |
| KR102198021B1 (ko) | 2021-01-05 |
| JP6366687B2 (ja) | 2018-08-01 |
| CN105190887A (zh) | 2015-12-23 |
| WO2014179651A1 (en) | 2014-11-06 |
| US20140327048A1 (en) | 2014-11-06 |
| TW201508894A (zh) | 2015-03-01 |
| KR20160004290A (ko) | 2016-01-12 |
| US20160372459A1 (en) | 2016-12-22 |
| US9685432B2 (en) | 2017-06-20 |
| CN105190887B (zh) | 2018-11-09 |
| JP2016521008A (ja) | 2016-07-14 |
| EP2992555B1 (en) | 2018-04-04 |
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